公开(公告)号：US11695320B2

公开(公告)日：2023-07-04

申请号：US17214527

申请日：2021-03-26

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Zhangyi Xie ,  Neil Gibson ,  Stefan Herzer

IPC: H02M3/158 ,  H02M1/00 ,  H02M1/08

CPC classification number: H02M1/0087 ,  H02M1/0025 ,  H02M1/08 ,  H02M3/158 ,  H02M1/0003 ,  H02M1/0083

Abstract: In some examples, a circuit includes a resistor network, a filter, a current generator, and a capacitor. The resistor network has a resistor network output and is adapted to be coupled between a switch terminal of a power converter (104) and a ground terminal. The filter has a filter input and a filter output, the filter input coupled to the resistor network output. The current generator has a current generator output and first and second current generator inputs, the first current generator input configured to receive an input voltage and the second current generator input coupled to the filter output. The capacitor is coupled between the current generator output and the ground terminal.

公开(公告)号：US20240429819A1

公开(公告)日：2024-12-26

申请号：US18211788

申请日：2023-06-20

Applicant: Texas Instruments Incorporated

Inventor： Ting-Li Hsu ,  Stefan Herzer ,  Qiao Yang

IPC: H02M3/158 ,  H02M1/088

Abstract: A ground reference circuit to generate a ground reference for a voltage reference circuit includes a resistor coupled in series with a transistor via a current mirror. The resistor is coupled between a ground reference terminal of the voltage reference circuit and a ground terminal of a power converter. The transistor control terminal is configured to receive a pulse width modulation (PWM) control signal having a duty cycle similar to a switching element duty cycle of the power converter. The current mirror circuit is coupled between a current terminal of the transistor and the ground reference terminal. A controller configured to control the switching element duty cycle may include the ground reference circuit, along with the voltage reference circuit, and a PWM circuit configured to determine the switching element duty cycle based on a comparison between a reference voltage provided by the voltage reference circuit and the converter output voltage.

公开(公告)号：US20240146298A1

公开(公告)日：2024-05-02

申请号：US17977822

申请日：2022-10-31

Applicant: Texas Instruments Incorporated

Inventor： Raveesh Magod Ramakrishna ,  Maik Peter Kaufmann ,  Michael Lueders ,  Johan Strydom ,  Stefan Herzer

IPC: H03K17/687 ,  H03K5/13

CPC classification number: H03K17/6871 ,  H03K5/13 ,  H03K2005/00019

Abstract: In described examples, an integrated circuit includes first and second current sources, first and second switches, a dV/dt phase detector, a control circuit, and source, gate, and drain terminals for coupling to, respectively, a source, gate, and drain of a power FET. The first switch is coupled between the first current source and the gate terminal. The second switch is coupled between the second current source and the gate terminal. The dV/dt phase detector detects a dV/dt phase of the power FET and outputs to the control circuit. The control circuit controls the first and second switches to perform a turn-on sequence of the power FET, including: closing the first switch while keeping the second switch open; and after receiving a signal from the dV/dt phase detector indicating the dV/dt phase has started, opening the first switch, and closing the second switch.

公开(公告)号：US20230059848A1

公开(公告)日：2023-02-23

申请号：US17828356

申请日：2022-05-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Scott Robert Summerfelt ,  Benjamin Stassen Cook ,  Simon Joshua Jacobs ,  Stefan Herzer

IPC: H01L23/48 ,  H01L25/065 ,  H01L21/768

Abstract: A device includes a die with a metallization stack. The device includes a substrate with a first region, a second region and a third region that underly the metallization stack and a first isolation trench filled with a polymer dielectric that extends between the first region and the second region of the substrate. The device also includes a second isolation trench filled with the polymer dielectric that extends between the second region and the third region. The polymer dielectric overlays a periphery of the substrate.

公开(公告)号：US20220244638A1

公开(公告)日：2022-08-04

申请号：US17512959

申请日：2021-10-28

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Hidetoshi Inoue ,  Kenji Kawano ,  Yuki Sato ,  Takafumi Ando ,  Michael Lueders ,  Stefan Herzer ,  Jeffrey Morroni

IPC: G03F7/00 ,  H01L21/027

Abstract: A permanent resist, such as TMMF, is used when patterning conductive material on a substrate, enabling lines that have a higher line-to-space ratio (L/S) or a higher aspect ratio (T/L) or both. Pattern density can thus be increased, allowing for improved performance (e.g., greater efficiency, in the case of transformer coil patterning) and greater heat dissipation. As examples, the permanent-resist-based patterning fabrication methods can be used to create transformer coils within an integrated circuit (IC) module, or a routable lead frame for one or more IC dies.

公开(公告)号：US10811543B2

公开(公告)日：2020-10-20

申请号：US16232322

申请日：2018-12-26

Applicant: Texas Instruments Incorporated

Inventor： Binghua Hu ,  Alexei Sadovnikov ,  Abbas Ali ,  Yanbiao Pan ,  Stefan Herzer

IPC: H01L21/02 ,  H01L29/94 ,  H01L29/08 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66

Abstract: A semiconductor device with an isolation structure and a trench capacitor, each formed using a single resist mask for etching corresponding first and second trenches of different widths and different depths, with dielectric liners formed on the trench sidewalls and polysilicon filling the trenches and deep doped regions surrounding the trenches, including conductive features of a metallization structure that connect the polysilicon of the isolation structure trench to the deep doped region to form an isolation structure.

公开(公告)号：US20200212229A1

公开(公告)日：2020-07-02

申请号：US16232322

申请日：2018-12-26

Applicant: Texas Instruments Incorporated

Inventor： Binghua Hu ,  Alexei Sadovnikov ,  Abbas Ali ,  Yanbiao Pan ,  Stefan Herzer

IPC: H01L29/94 ,  H01L29/08 ,  H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L21/8238

Abstract: A semiconductor device with an isolation structure and a trench capacitor, each formed using a single resist mask for etching corresponding first and second trenches of different widths and different depths, with dielectric liners formed on the trench sidewalls and polysilicon filling the trenches and deep doped regions surrounding the trenches, including conductive features of a metallization structure that connect the polysilicon of the isolation structure trench to the deep doped region to form an isolation structure.

公开(公告)号：US20200007035A1

公开(公告)日：2020-01-02

申请号：US16024371

申请日：2018-06-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Syed Wasif MEHDI ,  Stefan Herzer ,  Antonio PRIEGO

IPC: H02M3/158

Abstract: A system comprises a DC-to-DC voltage converter, the DC-to-DC voltage converter comprising: a high-side FET comprising a gate, a source, and a drain; a node coupled to the source of the high-side FET; a low-side FET comprising a gate, a source, and a drain coupled to the node; and a controller coupled to the gate of the high-side FET to switch on and off the high-side FET, and coupled to the gate of the low-side FET to switch on and off the low-side FET, the controller configured to switch on the low-side FET for a time interval before switching on the high-side FET and to switch off the low-side FET before switching on the high-side FET.

公开(公告)号：US11616038B2

公开(公告)日：2023-03-28

申请号：US17094723

申请日：2020-11-10

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Patrick Francis Thompson ,  Christopher Daniel Manack ,  Stefan Herzer ,  Rakshit Agrawal

IPC: H01L23/495 ,  H01L23/00

Abstract: A semiconductor die includes a substrate and an integrated circuit provided on the substrate and having contacts. An electrically conductive layer is provided on the integrated circuit and defines electrically conductive elements electrically connected to the contacts. Electrically conductive interconnects coupled with respective electrically conductive elements. The electrically conductive interconnects have at least one of different sizes or shapes from one another.

公开(公告)号：US20220158537A1

公开(公告)日：2022-05-19

申请号：US17214527

申请日：2021-03-26

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Zhangyi Xie ,  Neil Gibson ,  Stefan Herzer

IPC: H02M1/00 ,  H02M3/158 ,  H02M1/08

Abstract: In some examples, a circuit includes a resistor network, a filter, a current generator, and a capacitor. The resistor network has a resistor network output and is adapted to be coupled between a switch terminal of a power converter (104) and a ground terminal. The filter has a filter input and a filter output, the filter input coupled to the resistor network output. The current generator has a current generator output and first and second current generator inputs, the first current generator input configured to receive an input voltage and the second current generator input coupled to the filter output. The capacitor is coupled between the current generator output and the ground terminal.