Extended range ultrasound transducer

    公开(公告)号:US09751108B2

    公开(公告)日:2017-09-05

    申请号:US14814542

    申请日:2015-07-31

    CPC classification number: B06B1/0629 B06B1/0292 B06B1/0622

    Abstract: An ultrasonic transducer. The ultrasonic transducer has an interposer having electrical connectivity contacts. The ultrasonic transducer also has an ultrasonic receiver, comprising an array of receiving elements, physically fixed relative to the interposer and coupled to electrically communicate with electrical connectivity contacts of the interposer. The ultrasonic transducer also has at least one ultrasonic transmitter, separate from the ultrasonic receiver, physically fixed relative to the interposer and coupled to electrically communicate with electrical connectivity contacts of the interposer.

    WAFER LEVEL PACKAGING OF MEMS
    14.
    发明申请
    WAFER LEVEL PACKAGING OF MEMS 有权
    MEMS的WAFER LEVEL包装

    公开(公告)号:US20160052781A1

    公开(公告)日:2016-02-25

    申请号:US14467616

    申请日:2014-08-25

    Abstract: A MEMS device is formed by applying a lower polymer film to top surfaces of a common substrate containing a plurality of MEMS devices, and patterning the lower polymer film to form a headspace wall surrounding components of each MEMS device. Subsequently an upper polymer dry film is applied to top surfaces of the headspace walls and patterned to form headspace caps which isolate the components of each MEMS device. Subsequently, the MEMS devices are singulated to provide separate MEMS devices.

    Abstract translation: 通过将下部聚合物膜施加到包含多个MEMS器件的公共衬底的顶表面上并形成下部聚合物膜以形成围绕每个MEMS器件的部件的顶部空间壁来形成MEMS器件。 随后,将上部聚合物干膜施加到顶部空间壁的顶表面并且被图案化以形成隔离每个MEMS器件的部件的顶部空间盖。 随后,将MEMS器件分开以提供单独的MEMS器件。

    PIEZOELECTRIC THIN-FILM SENSOR AND USE THEREOF

    公开(公告)号:US20220011177A1

    公开(公告)日:2022-01-13

    申请号:US17486818

    申请日:2021-09-27

    Inventor: Wei-Yan Shih

    Abstract: A piezoelectric sensor comprises a support structure, a channel extending through the support structure, a sensing material stack coupled to the support structure and extending over the channel, and a filler material disposed within the channel and over the sensing material stack. The sensing material stack comprises an structural layer, a first electrode layer disposed on the structural layer, a piezoelectric material disposed in a piezoelectric layer on the first electrode, and a second electrode disposed on the piezoelectric layer opposite the first electrode layer.

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