公开(公告)号：US20220025511A1

公开(公告)日：2022-01-27

申请号：US17384058

申请日：2021-07-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masato SHINADA ,  Einstein Noel ABARRA ,  Hiroyuki TOSHIMA ,  Shota ISHIBASHI

IPC: C23C14/35 ,  C23C14/04

Abstract: An apparatus for performing a sputtering process on a substrate is provided. The apparatus includes a processing chamber having a substrate support on which the substrate is placed, a target for emitting target particles to be adhered to the substrate by plasma formed in the processing chamber, a magnet, provided on a rear surface of the target, for adjusting a state of the plasma on the surface of the target, and a magnet moving mechanism for repeatedly moving the magnet between a position on one side and a position on the other side set across a center portion on the rear surface of the target. The apparatus further includes a collimator having two regulating plates for limiting an incident angle of the target particles to the substrate, and an arrangement position adjustment mechanism adjusting positions of the two regulating plates according to the movement of the magnet.

公开(公告)号：US20210296103A1

公开(公告)日：2021-09-23

申请号：US17206738

申请日：2021-03-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shota ISHIBASHI ,  Tatsuo HIRASAWA ,  Hiroyuki TOSHIMA ,  Hiroyuki IWASHITA

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/04

Abstract: An example of a sputtering apparatus comprises a first target and a second target that emit sputter particles, a substrate support configured to support a substrate, a shielding plate disposed between the first and the second target and the substrate and having a through-hole through which the sputter particles pass, and an obstructing mechanism. The through-hole has a first opening region through which the sputter particles emitted from the fit target pass and a second opening region through which the sputter particles emitted from the second target pass, and the obstructing mechanism is configured to obstruct the sputter particles emitted from the first target in passing through the second opening region and the sputter particles emitted in the second target from passing through the first opening region.

公开(公告)号：US20210207261A1

公开(公告)日：2021-07-08

申请号：US17143924

申请日：2021-01-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shota ISHIBASHI ,  Hiroyuki TOSHIMA ,  Hiroyuki IWASHITA ,  Tatsuo HIRASAWA

IPC: C23C14/35

Abstract: A film forming apparatus includes a target holder that holds a target facing a substrate and extending in a predetermined direction on a horizontal plane, a magnet unit including a pair of magnet assemblies each having magnets and disposed at a back side of the target holder, a pair of shielding members disposed between the target and the substrate to extend from the target toward the substrate, and a moving mechanism configured to reciprocate the magnet unit between one end and the other end in the predetermined direction. The magnet assemblies are arranged along the predetermined direction, and each of the shielding members is disposed, in plan view, on a boundary line between a first region where only one of the magnet assemblies passes during a reciprocating motion of the magnet unit and a second region where both of the magnet assemblies pass therethrough during the reciprocating motion.

公开(公告)号：US20210118653A1

公开(公告)日：2021-04-22

申请号：US17050093

申请日：2019-03-20

Applicant: Tokyo Electron Limited

Inventor： Masato SHINADA ,  Hiroyuki TOSHIMA ,  Einstein Noel ABARRA

IPC: H01J37/32 ,  H01J37/34 ,  C23C14/34

Abstract: A film formation device includes a target holder configured to hold a target for emitting sputtering particles in a processing space inside a processing chamber, a sputtering particle emitting part configured to emit the sputtering particles from the target, a sputtering particle shielding plate having a passage hole through which the emitted sputtering particles pass, a shielding member provided to shield the passage hole, a movement mechanism configured to move the shielding member in the horizontal direction, and a controller. The controller controls the shielding member, which has the placement portion on which a substrate is placed, to be moved in one direction of the horizontal direction, and controls the sputtering particles to be emitted from the target. The sputtering particles passed through the passage hole are deposited on the substrate.

公开(公告)号：US20180001597A1

公开(公告)日：2018-01-04

申请号：US15638099

申请日：2017-06-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki TOSHIMA ,  Atsushi SHIMADA ,  Tatsuo HIRASAWA ,  Tatsuo HATANO ,  Shinji FURUKAWA

IPC: B32B15/20 ,  H01L23/532 ,  C01G23/00 ,  C01G41/00

CPC classification number: B32B15/20 ,  C01G23/00 ,  C01G41/00 ,  H01L21/768 ,  H01L23/53238

Abstract: A method for forming a copper film is provided. In the method, a base film that is a titanium nitride film, a tungsten film or a tungsten nitride film is formed along a surface of an insulating film of an object. A copper film is formed on the base film of the object cooled to a temperature of 209 K or less.

公开(公告)号：US20140287163A1

公开(公告)日：2014-09-25

申请号：US14297726

申请日：2014-06-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadahiro ISHIZAKA ,  Atsushi GOMI ,  Takara FUKUSHIMA ,  Osamu YOKOYAMA ,  Takashi SAKUMA ,  Chiaki YASUMURO ,  Hiroyuki TOSHIMA ,  Tatsuo HATANO ,  Yasushi MIZUSAWA ,  Masamichi HARA ,  Kenzi SUZUKI

IPC: H01L21/02

CPC classification number: H01L21/02104 ,  C23C14/025 ,  C23C14/046 ,  C23C14/345 ,  C23C14/541 ,  C23C14/5806 ,  C23C16/16 ,  H01J37/32899 ,  H01J37/34

Abstract: A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding Cu in the trench or hole by forming a Cu film on the Ru film using PVD while annealing the substrate such that migration of copper into the trench or hole occurs.

Abstract translation: 提供了一种在衬底中形成的沟槽或孔中形成Cu布线的方法。 该方法包括在沟槽或孔的表面上形成阻挡膜，在阻挡膜上形成Ru膜，并且通过在使衬底退火的同时在PVD膜上形成Cu膜而将Cu嵌入沟槽或孔中，使得 发生铜进入沟槽或孔的迁移。