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公开(公告)号：US20220098717A1
公开(公告)日：2022-03-31
申请号：US17428597
申请日：2019-09-20
发明人： Kenichi IMAKITA , Kazunaga ONO , Toru KITADA , Keisuke SATO , Atsushi GOMI , Hiroyuki YOKOHARA , Hiroshi SONE
摘要： A film forming apparatus according to the present invention comprises: a processing chamber; a substrate holder for holding a substrate within the processing chamber; a target electrode, disposed above the substrate holder, for holding a metal target and supplying electrical power from a power source to the target; an oxidizing gas introduction mechanism for supplying an oxidizing gas to the substrate; and a gas supply unit for supplying an inert gas to the space where the target is disposed. Constituent metal is discharged from the target in the form of sputter particles, whereby a metal film is deposited on the substrate, and the metal film is oxidized by the oxidizing gas introduced by the oxidizing gas introduction mechanism, thereby forming a metal oxide film. When the oxidizing gas is introduced, the gas supply unit supplies the inert gas to the space where the target is disposed so that the pressure therein is positive with respect to the pressure in a processing space.
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公开(公告)号：US20210407779A1
公开(公告)日：2021-12-30
申请号：US17354121
申请日：2021-06-22
发明人： Atsushi TAKEUCHI , Toru KITADA , Kanto NAKAMURA , Atsushi GOMI
摘要： A film forming apparatus for forming a film on a substrate by using a magnetron sputtering method. The film forming apparatus includes: a substrate holder configured to hold a substrate; a target holder configured to hold a target made of a ferromagnetic material to face the substrate holder; a magnet provided on a surface of the target holder opposite to the substrate holder, and configured to leak a magnetic field to a front surface of the target held by the target holder that is a surface close to the substrate holder; and a magnetic field strength measurement device configured to measure a strength of the magnetic field.
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公开(公告)号：US20210082675A1
公开(公告)日：2021-03-18
申请号：US17015170
申请日：2020-09-09
发明人： Kazunaga ONO , Atsushi GOMI , Tatsuo HATANO , Yasuhiro OTAGIRI , Tomoyuki FUJIHARA , Yuuki MOTOMURA
IPC分类号： H01J37/34 , C23C14/34 , H01L21/203
摘要： A sputtering method including: performing a pre-sputtering by emitting sputter particles from a target provided in a sputtering apparatus in a state where the target is shielded by a shielding portion of a shutter provided closed to the target to be capable of opening/closing the target; and, after the pre-sputtering, performing a main-sputtering by emitting the sputter particles from the target in a state where an opening of the shutter is aligned with the target thereby depositing the sputter particles on a substrate. When the pre-sputtering and the main-sputtering are repeatedly performed, a shutter position is changed during the pre-sputtering so as to change a position of the shielding portion aligned with the target.
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4.发明申请公开(公告)号：US20230011226A1
公开(公告)日：2023-01-12
申请号：US17853455
申请日：2022-06-29
发明人： Kazunaga ONO , Kanto NAKAMURA , Toru KITADA , Atsushi GOMI
摘要： There is provided a film thickness measurement method which measures a film thickness of a specific film to be measured in a multilayer film in situ in a film formation system that forms the multilayer film on a substrate, the method comprising: regarding a plurality of films located under the film to be measured as one underlayer film, measuring a film thickness of the underlayer film, and deriving an optical constant of the underlayer film by spectroscopic interferometry; and after the film to be measured is formed, deriving a film thickness of the film to be measured by spectroscopic interferometry using the film thickness and the optical constant of the underlayer film.
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公开(公告)号：US20150114835A1
公开(公告)日：2015-04-30
申请号：US14525096
申请日：2014-10-27
发明人： Atsushi GOMI , Shinji FURUKAWA , Kanto NAKAMURA , Kazunaga ONO
IPC分类号： H01J37/34
CPC分类号： H01J37/3423 , H01J37/3417 , H01J37/3447
摘要： A film forming apparatus includes a stage provided in the processing chamber; three or more targets uniformly arranged along a circle centering around a vertical axis line that passes through a center of the stage, each of the targets having a substantially rectangular shape; a shutter provided between the targets and the stage, the shutter including an opening which allows one of the targets to be selectively exposed to the stage; and a rotation shaft coupled to the shutter, the rotation shaft extending along the vertical axis line. A width of the opening in a tangent direction to the circle centering around the vertical axis line is set such that two adjacent targets in a circumferential direction of the circle among the targets are allowed to be partially and simultaneously exposed to the stage.
摘要翻译： 一种成膜装置，包括：设置在处理室中的台; 沿着穿过台的中心的垂直轴线周围的圆均匀排列的三个或更多个目标，每个目标具有基本上矩形的形状; 设置在所述目标和所述台之间的快门，所述快门包括允许所述目标之一选择性地暴露于所述台的开口; 以及联接到所述活门的旋转轴，所述旋转轴沿着所述垂直轴线延伸。 以围绕垂直轴线为中心的圆的切线方向的开口的宽度设定为使得目标之间的圆周方向上的两个相邻目标被部分地同时暴露于台。
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公开(公告)号：US20200381226A1
公开(公告)日：2020-12-03
申请号：US16883543
申请日：2020-05-26
摘要： A film forming apparatus includes: a processing container; a substrate holder that holds the substrate in the processing container; and a target assembly disposed in an upper side of the substrate holder. The target assembly includes: a target made of metal, including a main body and a flange provided around the main body, and emitting sputter particles from the main body; a target holder including a target electrode configured to supply power to the target, and holding the target; a target clamp that clamps the flange of the target to the target holder; and an anti-deposition shield provided around the main body of the target to cover the flange, the target clamp, and the target holder, and having a labyrinth structure in which an inner tip end thereof is disposed to enter a recess between the main body of the target and the target clamp.
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公开(公告)号：US20170317273A1
公开(公告)日：2017-11-02
申请号：US15652816
申请日：2017-07-18
发明人： Toru KITADA , Kanto NAKAMURA , Atsushi GOMI , Shinji FURUKAWA , Yusuke SUZUKI
IPC分类号： H01L43/12 , H01L43/08 , H01F41/18 , H01F10/32 , C23C14/08 , H01F10/16 , C23C14/58 , C23C14/34 , H01L43/10
CPC分类号： H01L43/12 , C23C14/082 , C23C14/165 , C23C14/34 , C23C14/568 , C23C14/5853 , H01F10/16 , H01F10/3254 , H01F10/3286 , H01F41/18 , H01L27/105 , H01L43/08 , H01L43/10
摘要： A method for forming a perpendicular magnetization type magnetic tunnel junction element includes forming a tunnel barrier layer on a first magnetic layer of a workpiece, cooling the workpiece on which the tunnel barrier layer is formed, and forming a second magnetic layer on the tunnel barrier layer after the cooling.
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公开(公告)号：US20160251746A1
公开(公告)日：2016-09-01
申请号：US15032688
申请日：2014-08-28
发明人： Yasuhiko KOJIMA , Hiroshi SONE , Atsushi GOMI , Kanto NAKAMURA , Toru KITADA , Yasunobu SUZUKI , Yusuke SUZUKI , Koichi TAKATSUKI , Tatsuo HIRASAWA , Keisuke SATO , Chiaki YASUMURO , Atsushi SHIMADA
CPC分类号： C23C14/0036 , C23C14/0063 , C23C14/081 , C23C14/165 , C23C14/352 , H01J37/3244 , H01J37/32449 , H01J37/3405 , H01J37/3426 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A deposition device according to one embodiment includes a processing container. A mounting table is installed inside the processing container, and a metal target is installed above the mounting table. Further, a head is configured to inject an oxidizing gas toward the mounting table. This head is configured to move between a first region that is defined between the metal target and a mounting region where a target object is mounted on the mounting table and a second region spaced apart from a space defined between the metal target and the mounting region.
摘要翻译： 根据一个实施例的沉积装置包括处理容器。 安装台安装在加工容器的内部，金属靶被安装在安装台的上方。 此外，头部构造成朝向安装台注入氧化气体。 该头部构造成在限定在金属靶和安装在安装台上的目标物体的安装区域之间的第一区域和与限定在金属靶和安装区域之间的空间间隔开的第二区域之间移动。
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公开(公告)号：US20230005989A1
公开(公告)日：2023-01-05
申请号：US17854944
申请日：2022-06-30
发明人： Keisuke SATO , Toru KITADA , Atsushi GOMI , Kanto NAKAMURA
摘要： A film forming apparatus for forming a laminated structure on a substrate to form a magnetic tunnel junction element is disclosed. The film forming apparatus comprises: a plurality of processing chambers where a magnetic layer and an insulating layer are formed on the substrate; a heat treatment chamber where a magnetic field is applied to the substrate to perform heat treatment; a vacuum transfer chamber that connects the processing chambers and the heat treatment chamber; and a controller.
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公开(公告)号：US20160032446A1
公开(公告)日：2016-02-04
申请号：US14810239
申请日：2015-07-27
发明人： Atsushi GOMI , Kanto NAKAMURA , Tooru KITADA , Yasunobu SUZUKI , Shinji FURUKAWA
CPC分类号： C23C14/0063 , C23C14/081 , C23C14/3464 , C23C14/3492 , C23C14/541 , H01J37/3244 , H01J37/32724 , H01J37/3405
摘要： A film forming apparatus, for forming a metal oxide film on an object, includes a holding unit and a heating unit. The holding unit includes a first heater and holds the object in a processing chamber. A first heater power supply supplies power to the first heater. A target electrode is electrically connected to a metal target provided above the holding unit. A sputtering power supply is electrically connected to the target electrode. An introduction mechanism supplies an oxygen gas toward the holding unit. The heating unit includes a second heater for heating the object and a moving mechanism for moving the second heater between a region in a first space disposed above the holding unit and a region in a second space separated from the first space. A second heater power supply supplies power to the second heater.
摘要翻译： 用于在物体上形成金属氧化物膜的成膜装置包括保持单元和加热单元。 保持单元包括第一加热器并将物体保持在处理室中。 第一加热器电源向第一加热器供电。 目标电极与设置在保持单元上方的金属靶电连接。 溅射电源电连接到目标电极。 导入机构向保持单元供给氧气。 加热单元包括用于加热物体的第二加热器和用于在设置在保持单元上方的第一空间中的区域和与第一空间分离的第二空间中的区域之间移动第二加热器的移动机构。 第二加热器电源向第二加热器供电。
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