公开(公告)号：US20160118222A1

公开(公告)日：2016-04-28

申请号：US14991383

申请日：2016-01-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei YAMAZAWA ,  Kazuki DENPOH ,  Jun YAMAWAKU

IPC: H01J37/32 ,  C23C16/505

CPC classification number: H01J37/3211 ,  C23C16/505 ,  H01J37/321 ,  H01J37/3244

Abstract: A plasma processing apparatus includes a processing chamber, a part of which is formed of a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting a target substrate; a processing gas supply unit for supplying a processing gas to the processing chamber to perform a plasma process on the target substrate; an RF antenna, provided outside the dielectric window, for generating a plasma from the processing gas by an inductive coupling in the processing chamber; and an RF power supply unit for supplying an RF power to the RF antenna. The RF antenna includes a single-wound or multi-wound coil conductor having a cutout portion in a coil circling direction; and a pair of RF power lines from the RF power supply unit are respectively connected to a pair of coil end portions of the coil conductor that are opposite to each other via the cutout portion.

Abstract translation: 等离子体处理装置包括处理室，其一部分由电介质窗形成; 设置在处理室中的基板支撑单元，用于安装目标基板; 处理气体供应单元，用于向处理室供应处理气体以对目标基板执行等离子体处理; 设置在电介质窗外部的RF天线，用于通过处理室中的感应耦合从处理气体产生等离子体; 以及用于向RF天线提供RF功率的RF电源单元。 RF天线包括具有线圈绕行方向的切口部的单绕线圈或多绕线圈导体， 并且来自RF电源单元的一对RF电力线分别经由切口部分彼此相对地连接到线圈导体的一对线圈端部。

公开(公告)号：US20140216345A1

公开(公告)日：2014-08-07

申请号：US14250783

申请日：2014-04-11

Applicant: Tokyo Electron Limited

Inventor： Yohei YAMAZAWA ,  Chishio KOSHIMIZU ,  Masashi SAITO ,  Kazuki DENPOH ,  Jun YAMAWAKU

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32146 ,  H01L21/67109 ,  H01L21/6831

Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.

Abstract translation: 一种等离子体处理装置，包括：具有电介质窗的处理室; 设置在电介质窗外部的线圈状RF天线; 设置在所述处理室中的基板支撑单元; 处理气体供应单元; RF电源单元，用于向RF天线提供RF功率以通过处理室中的感应耦合产生处理气体的等离子体，所述RF功率具有用于处理气体的RF放电的适当频率; 校正线圈，设置在所述处理室外侧的位置处，所述校正线圈将通过电磁感应与所述RF天线耦合，用于控制所述处理室中的所述衬底上的等离子体密度分布; 设置在所述校正线圈的环路中的开关装置; 以及用于通过脉冲宽度调制以期望的占空比开关控制开关装置的开关控制单元。

公开(公告)号：US20240395517A1

公开(公告)日：2024-11-28

申请号：US18792901

申请日：2024-08-02

Applicant: Tokyo Electron Limited

Inventor： Yohei YAMAZAWA

IPC: H01J37/32

Abstract: A data calculation method includes: acquiring a first data group for a predetermined period; dividing the first data group into a plurality of groups according to a range of each data value included in the first data group; extracting a second data group included in a valid group among the plurality of groups; and outputting a statistical value for each of the plurality of groups based on the second data group.

公开(公告)号：US20230343553A1

公开(公告)日：2023-10-26

申请号：US18135753

申请日：2023-04-18

Applicant: Tokyo Electron Limited

Inventor： Yohei YAMAZAWA

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/32183 ,  H01J2237/327

Abstract: The present disclosure relates to an antenna for inductively coupled plasma excitation. The antenna comprises: a conductive plate; a plurality of coil assemblies, one end of each of the plurality of coil assemblies being connected to the conductive plate; and an impedance adjusting part disposed between the other end of each of the plurality of coil assemblies and the ground.

公开(公告)号：US20230260752A1

公开(公告)日：2023-08-17

申请号：US18110470

申请日：2023-02-16

Applicant: Tokyo Electron Limited

Inventor： Yohei YAMAZAWA

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/32119

Abstract: A plasma processing apparatus is provided. The apparatus comprises: a chamber accommodating a substrate; a window member forming an upper portion of the chamber; a gas inlet port disposed in at least one of a sidewall of the chamber and the window member, and configured to supply a gas into the chamber; and an antenna disposed above the chamber with the window member interposed therebetween, having a linear shape and made of a conductive material, and configured to produce plasma from the gas supplied into the chamber by radiating a radio frequency (RF) power into the chamber. The antenna includes: a first coil to which the RF power is supplied; and a plurality of second coils formed in the same shape and arranged around the first coil to be rotationally symmetrical with respect to a central axis of the first coil. One ends of the second coils are connected one-to-one to variable capacitors.

公开(公告)号：US20230021588A1

公开(公告)日：2023-01-26

申请号：US17949925

申请日：2022-09-21

Applicant: Tokyo Electron Limited

Inventor： Yohei YAMAZAWA ,  Takehisa Saito ,  Mayo Uda ,  Keigo Toyoda ,  Alok Ranjan ,  Toshiki Nakajima

IPC: H05H1/46 ,  H01L21/67 ,  H01J37/32

Abstract: A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.

公开(公告)号：US20190019653A1

公开(公告)日：2019-01-17

申请号：US16068696

申请日：2017-01-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei YAMAZAWA ,  Atsuki FURUYA

IPC: H01J37/32 ,  C23C16/455

Abstract: A plasma processing apparatus includes a processing chamber, a high frequency power supply and a load variation stabilization circuit. The high frequency power supply is configured to supply a high frequency power to the processing chamber and generate plasma inside the processing chamber. The load variation stabilization circuit is connected in parallel with the processing chamber at a connection portion provided between the high frequency power supply and the processing chamber. The load variation stabilization circuit is configured to suppress variation in a load impedance when viewing a downstream side from the connection portion.

公开(公告)号：US20160172160A1

公开(公告)日：2016-06-16

申请号：US15008064

申请日：2016-01-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei YAMAZAWA ,  Masashi SAITO ,  Kazuki DENPOH ,  Chishio KOSHIMIZU ,  Jun YAMAWAKU

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6831 ,  H05H1/46

Abstract: A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.

Abstract translation: 一种等离子体处理装置，包括：具有电介质窗的可抽空处理室; 基板支撑单元，设置在处理室中，用于在其上安装目标基板; 处理气体供给单元，用于向所述处理室供给期望的处理气体，以在所述目标基板上进行等离子体处理; 设置在电介质窗口上的第一RF天线，用于通过处理室中的感应耦合产生等离子体; 以及用于向第一RF天线提供RF功率的第一RF电源单元。 第一RF天线包括设置在电介质窗口上或电介质窗上方的电连接到第一RF电源单元的初级线圈; 以及次级线圈，其被设置成使得线圈通过其间的电磁感应彼此耦合，同时布置成比初级线圈更靠近电介质窗口的底表面。

公开(公告)号：US20140062296A1

公开(公告)日：2014-03-06

申请号：US14011860

申请日：2013-08-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei YAMAZAWA ,  Takafumi KIMURA ,  Chishio KOSHIMIZU

IPC: H05H1/46

CPC classification number: H05H1/46 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32119 ,  H05H2001/4667

Abstract: A plasma processing apparatus includes: a mounting table, disposed in a processing chamber, configured to mount thereon the substrate; an inductively coupled antenna disposed outside the processing chamber to be opposite to the mounting table, the inductively coupled antenna being connected to a high frequency power supply; and a window member forming a wall of the processing chamber which faces the inductively coupled antenna. The window member includes a plurality of conductive windows made of a conductive material, and dielectric portions disposed between the conductive windows. The inductively coupled antenna is extended in a predetermined direction on the window member and electrically connected to one of the conductive windows, and electrical connection by conductors is sequentially performed from the one of the conductive windows to the other conductive windows in the same direction as an extension direction of the inductively coupled antenna.

Abstract translation: 一种等离子体处理装置，包括：安装台，设置在处理室中，构造成安装在其上; 电感耦合天线，其设置在与所述安装台相对的所述处理室的外部，所述感应耦合天线连接到高频电源; 以及形成处理室的壁的窗构件，其面对电感耦合天线。 窗构件包括由导电材料制成的多个导电窗，以及设置在导电窗之间的电介质部分。 电感耦合天线在窗构件上沿预定方向延伸并电连接到导电窗中的一个，并且通过导体的电连接从一个导电窗口顺序地执行到与其它导电窗口相同的方向 电感耦合天线的延伸方向。

公开(公告)号：US20140048211A1

公开(公告)日：2014-02-20

申请号：US14064649

申请日：2013-10-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei YAMAZAWA

IPC: H01J37/02

CPC classification number: H01J37/32697 ,  H01J37/02 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/32137 ,  H01J37/32174 ,  H01J37/3244 ,  H01J2237/327 ,  H01J2237/3341

Abstract: An inductively coupled plasma process can effectively and properly control plasma density distribution within donut-shaped plasma in a processing chamber is provided. In an inductively coupled plasma processing apparatus, a RF antenna 54 disposed above a dielectric window 52 is segmented in a diametrical direction into an inner coil 58, an intermediate coil 60, and an outer coil 62 in order to generate inductively coupled plasma. Between a first node NA and a second node NB provided in high frequency transmission lines of the high frequency power supply unit 66, a variable intermediate capacitor 86 and a variable outer capacitor 88 are electrically connected in series to the intermediate coil 60 and the outer coil 62, respectively, and a fixed or semi-fixed inner capacitor 104 is electrically connected to the inner coil 58.

Abstract translation: 提供电感耦合等离子体处理可以有效且适当地控制处理室中的环形等离子体中的等离子体密度分布。 在电感耦合等离子体处理装置中，设置在电介质窗52之上的RF天线54沿直径方向分割为内线圈58，中间线圈60和外线圈62，以便产生电感耦合等离子体。 在高频电源单元66的高频传输线中提供的第一节点NA和第二节点NB之间，可变中间电容器86和可变外部电容器88串联地电连接到中间线圈60和外部线圈 并且固定或半固定内部电容器104电连接到内部线圈58。