公开(公告)号：US20180308662A1

公开(公告)日：2018-10-25

申请号：US16002196

申请日：2018-06-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei YAMAZAWA ,  Masashi SAITO ,  Kazuki DENPOH ,  Chishio KOSHIMIZU ,  Jun YAMAWAKU

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6831 ,  H05H1/46

Abstract: A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.

公开(公告)号：US20170256381A1

公开(公告)日：2017-09-07

申请号：US15441324

申请日：2017-02-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuki DENPOH

IPC: H01J37/32 ,  C23C16/505 ,  C23C16/52 ,  C23C16/455

CPC classification number: H01J37/32128 ,  C23C16/08 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32724 ,  H01J2237/332

Abstract: There is provided a substrate processing apparatus which performs a film forming process by supplying a raw material gas to a substrate and irradiating plasma onto the substrate, the apparatus including: a processing container configured to hermetically accommodate a mounting table on which the substrate is mounted; and a plasma source configured to generate plasma in the processing container. The plasma source includes a high-frequency power source that generates plasma and a sheath potential reducing means configured to reduce a sheath potential of the generated plasma.

公开(公告)号：US20160172160A1

公开(公告)日：2016-06-16

申请号：US15008064

申请日：2016-01-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei YAMAZAWA ,  Masashi SAITO ,  Kazuki DENPOH ,  Chishio KOSHIMIZU ,  Jun YAMAWAKU

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6831 ,  H05H1/46

Abstract: A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.

Abstract translation: 一种等离子体处理装置，包括：具有电介质窗的可抽空处理室; 基板支撑单元，设置在处理室中，用于在其上安装目标基板; 处理气体供给单元，用于向所述处理室供给期望的处理气体，以在所述目标基板上进行等离子体处理; 设置在电介质窗口上的第一RF天线，用于通过处理室中的感应耦合产生等离子体; 以及用于向第一RF天线提供RF功率的第一RF电源单元。 第一RF天线包括设置在电介质窗口上或电介质窗上方的电连接到第一RF电源单元的初级线圈; 以及次级线圈，其被设置成使得线圈通过其间的电磁感应彼此耦合，同时布置成比初级线圈更靠近电介质窗口的底表面。

公开(公告)号：US20160203951A1

公开(公告)日：2016-07-14

申请号：US15079381

申请日：2016-03-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei YAMAZAWA ,  Chishio KOSHIMIZU ,  Kazuki DENPOH ,  Jun YAMAWAKU ,  Masashi SAITO

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01J37/3211 ,  C23C16/455 ,  C23C16/50 ,  H01J37/321 ,  H01J37/3244 ,  H05H1/46

Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped RF antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber. The apparatus further includes a floating coil electrically floated and arranged at a position outside the processing chamber where the floating coil is to be coupled with the RF antenna by an electromagnetic induction; and a capacitor provided in a loop of the floating coil.

Abstract translation: 一种等离子体处理装置，包括：具有电介质窗的处理室; 设置在电介质窗外部的线圈形RF天线; 基板支撑单元，设置在处理室中，用于在其上安装待处理的目标基板; 处理气体供应单元，用于将所需的处理气体供应到处理室以对目标基板执行所需的等离子体处理; 以及RF电源单元，用于向RF天线提供RF功率，以通过处理室中的感应耦合产生处理气体的等离子体。 该装置还包括一个浮动线圈，其浮动并布置在处理室外部的位置处，浮动线圈将通过电磁感应与RF天线耦合; 以及设置在浮动线圈的环路中的电容器。

公开(公告)号：US20160118222A1

公开(公告)日：2016-04-28

申请号：US14991383

申请日：2016-01-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei YAMAZAWA ,  Kazuki DENPOH ,  Jun YAMAWAKU

IPC: H01J37/32 ,  C23C16/505

CPC classification number: H01J37/3211 ,  C23C16/505 ,  H01J37/321 ,  H01J37/3244

Abstract: A plasma processing apparatus includes a processing chamber, a part of which is formed of a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting a target substrate; a processing gas supply unit for supplying a processing gas to the processing chamber to perform a plasma process on the target substrate; an RF antenna, provided outside the dielectric window, for generating a plasma from the processing gas by an inductive coupling in the processing chamber; and an RF power supply unit for supplying an RF power to the RF antenna. The RF antenna includes a single-wound or multi-wound coil conductor having a cutout portion in a coil circling direction; and a pair of RF power lines from the RF power supply unit are respectively connected to a pair of coil end portions of the coil conductor that are opposite to each other via the cutout portion.

Abstract translation: 等离子体处理装置包括处理室，其一部分由电介质窗形成; 设置在处理室中的基板支撑单元，用于安装目标基板; 处理气体供应单元，用于向处理室供应处理气体以对目标基板执行等离子体处理; 设置在电介质窗外部的RF天线，用于通过处理室中的感应耦合从处理气体产生等离子体; 以及用于向RF天线提供RF功率的RF电源单元。 RF天线包括具有线圈绕行方向的切口部的单绕线圈或多绕线圈导体， 并且来自RF电源单元的一对RF电力线分别经由切口部分彼此相对地连接到线圈导体的一对线圈端部。

公开(公告)号：US20140216345A1

公开(公告)日：2014-08-07

申请号：US14250783

申请日：2014-04-11

Applicant: Tokyo Electron Limited

Inventor： Yohei YAMAZAWA ,  Chishio KOSHIMIZU ,  Masashi SAITO ,  Kazuki DENPOH ,  Jun YAMAWAKU

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32146 ,  H01L21/67109 ,  H01L21/6831

Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.

Abstract translation: 一种等离子体处理装置，包括：具有电介质窗的处理室; 设置在电介质窗外部的线圈状RF天线; 设置在所述处理室中的基板支撑单元; 处理气体供应单元; RF电源单元，用于向RF天线提供RF功率以通过处理室中的感应耦合产生处理气体的等离子体，所述RF功率具有用于处理气体的RF放电的适当频率; 校正线圈，设置在所述处理室外侧的位置处，所述校正线圈将通过电磁感应与所述RF天线耦合，用于控制所述处理室中的所述衬底上的等离子体密度分布; 设置在所述校正线圈的环路中的开关装置; 以及用于通过脉冲宽度调制以期望的占空比开关控制开关装置的开关控制单元。

公开(公告)号：US20200058467A1

公开(公告)日：2020-02-20

申请号：US16662715

申请日：2019-10-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei YAMAZAWA ,  Kazuki DENPOH ,  Jun YAMAWAKU

IPC: H01J37/32 ,  C23C16/505

Abstract: A plasma processing apparatus includes a processing chamber, a part of which is formed of a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting a target substrate; a processing gas supply unit for supplying a processing gas to the processing chamber to perform a plasma process on the target substrate; an RF antenna, provided outside the dielectric window, for generating a plasma from the processing gas by an inductive coupling in the processing chamber; and an RF power supply unit for supplying an RF power to the RF antenna. The RF antenna includes a single-wound or multi-wound coil conductor having a cutout portion in a coil circling direction; and a pair of RF power lines from the RF power supply unit are respectively connected to a pair of coil end portions of the coil conductor that are opposite to each other via the cutout portion.

公开(公告)号：US20140216346A1

公开(公告)日：2014-08-07

申请号：US14250514

申请日：2014-04-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei YAMAZAWA ,  Chishio KOSHIMIZU ,  Masashi SAITO ,  Kazuki DENPOH ,  Jun YAMAWAKU

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32146 ,  H01L21/67109 ,  H01L21/6831

Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.

公开(公告)号：US20130228284A1

公开(公告)日：2013-09-05

申请号：US13854910

申请日：2013-04-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuki DENPOH ,  Peter LG Ventzek ,  Lin Xu ,  Lee Chen

IPC: H01L21/02 ,  H01J31/00

CPC classification number: H01L21/02 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  H01J31/00 ,  H01J37/3244 ,  H01J37/32596

Abstract: A chamber component configured to be coupled to a processing chamber is described. The chamber component comprises one or more adjustable gas passages through which a process gas is introduced to the process chamber. The adjustable gas passage may be configured to form a hollow cathode that creates a hollow cathode plasma in a hollow cathode region having one or more plasma surfaces in contact with the hollow cathode plasma. Therein, at least one of the one or more plasma surfaces is movable in order to vary the size of the hollow cathode region and adjust the properties of the hollow cathode plasma. Furthermore, one or more adjustable hollow cathodes may be utilized to adjust a plasma process for treating a substrate.