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162 条记录 (耗时 0.026 秒)

    Solid-state image pickup device
    12.
    发明授权
    Solid-state image pickup device 有权
    固态图像拾取装置

    公开(公告)号：US06188094B1

    公开(公告)日：2001-02-13

    申请号：US09270008

    申请日：1999-03-16

    申请人： Tetsunobu Kochi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    发明人： Tetsunobu Kochi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    IPC分类号： H01L27148

    CPC分类号： H01L27/14629 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14692 ,  H01L27/14698

    摘要： To achieve a high density, high resolution, or size reduction, there is provided a solid-state image pickup device having a plurality of photoelectric conversion elements formed in a semiconductor substrate, conductive layers formed on the semiconductor substrate between the neighboring photoelectric conversion elements via an interlayer layer, a first interlayer layer formed on the photoelectric conversion elements and conductive layers, a second interlayer layer formed on the first interlayer layer, and microlenses formed above the photoelectric conversion elements, wherein the refraction index of the first interlayer layer located above the photoelectric conversion elements is different from that of the second interlayer layer.

    摘要翻译： 为了实现高密度，高分辨率或尺寸减小，提供了一种固态图像拾取装置，其具有形成在半导体衬底中的多个光电转换元件，在相邻的光电转换元件之间的半导体衬底上形成的导电层经由 层间层，形成在光电转换元件和导电层上的第一层间层，形成在第一层间层上的第二层间层和形成在光电转换元件上方的微透镜，其中位于第一层间层上方的第一层间层的折射率 光电转换元件与第二层间层不同。

    Image sensing device using MOS type image sensing elements
    15.
    发明授权
    Image sensing device using MOS type image sensing elements 失效
    图像感测器件采用MOS型摄像元件

    公开(公告)号：US06946637B2

    公开(公告)日：2005-09-20

    申请号：US10680181

    申请日：2003-10-08

    申请人： Tetsunobu Kochi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    发明人： Tetsunobu Kochi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    IPC分类号： H01L27/146 ,  H04N5/355 ,  H04N5/363 ,  H04N5/365 ,  H04N5/374 ,  H04N5/3745 ,  H01J40/14

    CPC分类号： H04N5/37452 ,  H01L27/14609 ,  H01L27/14643 ,  H04N5/3559 ,  H04N5/363 ,  H04N5/365 ,  H04N5/374 ,  H04N5/3741

    摘要： In a photoelectric conversion device having a plurality of pixel cells each of which includes a photoelectric conversion element, a field effect transistor having the gate area for storing signal charge generated by the photoelectric conversion element and the source-drain path for outputting a signal corresponding to the signal charge stored in the gate, a first power supply line for supplying electric power to the field effect transistor, and a first switch connected between the field effect transistor and the first power supply line, when a reset voltage for resetting the gate of the field effect transistor is Vsig0, a threshold voltage of the field effect transistor is Vth, current flowing through the field effect transistor is Ia, a voltage applied via the first power supply line is Vc1, and a series resistance of the first switch is Ron, each pixel cell is configured to satisfy a condition determined by Vc1−Ron×Ia>Vsig0−Vth.

    摘要翻译： 在具有包括光电转换元件的多个像素单元的光电转换装置中，具有用于存储由光电转换元件生成的信号电荷的栅极区域的场效应晶体管和用于输出与光电转换元件对应的信号的源极 - 漏极路径 存储在栅极中的信号电荷，用于向场效应晶体管提供电力的第一电源线和连接在场效应晶体管和第一电源线之间的第一开关，当用于复位栅极的复位电压 场效应晶体管是V Sig0 ，场效应晶体管的阈值电压为V th，则流过场效应晶体管的电流为I / ，经由第一电源线施加的电压为V C1，并且第一开关的串联电阻为R＆lt;＆lt;＆gt;，每个像素单元被配置为满足所确定的条件 通过V c1 <！ - SIPO

    Solid-state image pickup apparatus
    17.
    发明授权
    Solid-state image pickup apparatus 有权
    固态摄像装置

    公开(公告)号：US07973835B2

    公开(公告)日：2011-07-05

    申请号：US10967360

    申请日：2004-10-19

    申请人： Katsuhito Sakurai ,  Shigetoshi Sugawa ,  Hideyuki Arai ,  Isamu Ueno ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Tetsunobu Kochi ,  Hiroki Hiyama

    发明人： Katsuhito Sakurai ,  Shigetoshi Sugawa ,  Hideyuki Arai ,  Isamu Ueno ,  Katsuhisa Ogawa ,  Toru Koizumi ,  Tetsunobu Kochi ,  Hiroki Hiyama

    IPC分类号： H04N5/217 ,  H04N3/14 ,  H01L27/00

    CPC分类号： H04N5/35563 ,  H04N5/3559 ,  H04N5/3575

    摘要： This invention is to provide a solid-state image pickup apparatus including a photoelectric conversion unit (PD), transfer switch (MTX) for transferring signal charges from the photoelectric conversion unit, capacitance for holding the transferred signal charges, and amplification transistor (MSF) for outputting a signal corresponding to the signal charges held by the capacitance. The amplification transistor includes a capacitance unit (CFD) having the first capacitance value and an additive capacitance unit (Cox) for adding a capacitance to the capacitance unit to increase the first capacitance value and obtain the second capacitance value. A signal read-out from the amplification transistor has a first read-out mode in which a signal is read out while keeping the signal charges held by the capacitance unit and additive capacitance unit, and a second read-out mode in which a signal is read out while keeping the signal charges held by the capacitance unit.

    摘要翻译： 本发明提供一种固态摄像装置，包括光电转换单元（PD），用于传送来自光电转换单元的信号电荷的转移开关（MTX），用于保持传送的信号电荷的电容和放大晶体管（MSF） 用于输出对应于由电容保持的信号电荷的信号。 放大晶体管包括具有第一电容值的电容单元（CFD）和用于将电容添加到电容单元的增加电容单元（Cox），以增加第一电容值并获得第二电容值。 从放大晶体管读出的信号具有第一读出模式，其中在保持由电容单元和附加电容单元保持的信号电荷的同时读出信号，以及第二读出模式，其中信号为 在保持由电容单元保持的信号电荷的同时读出。

    Solid state image pickup apparatus
    18.
    发明授权
    Solid state image pickup apparatus 有权
    固态摄像装置

    公开(公告)号：US07110030B1

    公开(公告)日：2006-09-19

    申请号：US09264719

    申请日：1999-03-09

    申请人： Tetsunobu Kochi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Toru Koizumi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    发明人： Tetsunobu Kochi ,  Shigetoshi Sugawa ,  Isamu Ueno ,  Toru Koizumi ,  Katsuhito Sakurai ,  Hiroki Hiyama

    IPC分类号： H04N3/14 ,  H04N5/335

    CPC分类号： H04N5/374

    摘要： In the solid state image pickup apparatus, in order to achieve complete transfer of the charge from the photodiode to the floating diffusion area, there is provided a pickup apparatus having a photoelectric conversion element, a transfer switch consisting of a MOS transistor for transferring the signal charge generated in the photoelectric conversion element, a floating diffusion capacitance for receiving the signal charge through the transfer switch, and a reset switch consisting of a MOS transistor for resetting the potential of the floating diffusion capacitance, the device comprising at least a potential setting circuit for generating a voltage different from the power supply voltage, wherein the output of the potential setting circuit is applied as a pulse to the gate of the transfer switch and/or the gate of the reset switch.

    摘要翻译： 在固态图像拾取装置中，为了实现电荷从光电二极管完全转移到浮动扩散区域，提供了一种拾取装置，其具有光电转换元件，由用于传送信号的MOS晶体管组成的转移开关 在光电转换元件中产生的电荷，用于通过转移开关接收信号电荷的浮动扩散电容，以及由用于复位浮动扩散电容的电位的MOS晶体管组成的复位开关，该器件至少包括电位设置电路 用于产生不同于电源电压的电压，其中电位设置电路的输出作为脉冲施加到转换开关的栅极和/或复位开关的栅极。