Image sensing device using MOS type image sensing elements
    3.
    发明授权
    Image sensing device using MOS type image sensing elements 失效
    图像感测器件采用MOS型摄像元件

    公开(公告)号:US06946637B2

    公开(公告)日:2005-09-20

    申请号:US10680181

    申请日:2003-10-08

    摘要: In a photoelectric conversion device having a plurality of pixel cells each of which includes a photoelectric conversion element, a field effect transistor having the gate area for storing signal charge generated by the photoelectric conversion element and the source-drain path for outputting a signal corresponding to the signal charge stored in the gate, a first power supply line for supplying electric power to the field effect transistor, and a first switch connected between the field effect transistor and the first power supply line, when a reset voltage for resetting the gate of the field effect transistor is Vsig0, a threshold voltage of the field effect transistor is Vth, current flowing through the field effect transistor is Ia, a voltage applied via the first power supply line is Vc1, and a series resistance of the first switch is Ron, each pixel cell is configured to satisfy a condition determined by Vc1−Ron×Ia>Vsig0−Vth.

    摘要翻译: 在具有包括光电转换元件的多个像素单元的光电转换装置中,具有用于存储由光电转换元件生成的信号电荷的栅极区域的场效应晶体管和用于输出与光电转换元件对应的信号的源极 - 漏极路径 存储在栅极中的信号电荷,用于向场效应晶体管提供电力的第一电源线和连接在场效应晶体管和第一电源线之间的第一开关,当用于复位栅极的复位电压 场效应晶体管是V Sig0 ,场效应晶体管的阈值电压为V th,则流过场效应晶体管的电流为I / ,经由第一电源线施加的电压为V C1,并且第一开关的串联电阻为R&lt;&lt;&gt;,每个像素单元被配置为满足所确定的条件 通过V c1 <! - SIPO

    Solid-state image pickup apparatus
    5.
    发明授权
    Solid-state image pickup apparatus 有权
    固态摄像装置

    公开(公告)号:US07973835B2

    公开(公告)日:2011-07-05

    申请号:US10967360

    申请日:2004-10-19

    IPC分类号: H04N5/217 H04N3/14 H01L27/00

    摘要: This invention is to provide a solid-state image pickup apparatus including a photoelectric conversion unit (PD), transfer switch (MTX) for transferring signal charges from the photoelectric conversion unit, capacitance for holding the transferred signal charges, and amplification transistor (MSF) for outputting a signal corresponding to the signal charges held by the capacitance. The amplification transistor includes a capacitance unit (CFD) having the first capacitance value and an additive capacitance unit (Cox) for adding a capacitance to the capacitance unit to increase the first capacitance value and obtain the second capacitance value. A signal read-out from the amplification transistor has a first read-out mode in which a signal is read out while keeping the signal charges held by the capacitance unit and additive capacitance unit, and a second read-out mode in which a signal is read out while keeping the signal charges held by the capacitance unit.

    摘要翻译: 本发明提供一种固态摄像装置,包括光电转换单元(PD),用于传送来自光电转换单元的信号电荷的转移开关(MTX),用于保持传送的信号电荷的电容和放大晶体管(MSF) 用于输出对应于由电容保持的信号电荷的信号。 放大晶体管包括具有第一电容值的电容单元(CFD)和用于将电容添加到电容单元的增加电容单元(Cox),以增加第一电容值并获得第二电容值。 从放大晶体管读出的信号具有第一读出模式,其中在保持由电容单元和附加电容单元保持的信号电荷的同时读出信号,以及第二读出模式,其中信号为 在保持由电容单元保持的信号电荷的同时读出。

    Solid state image pickup device and signal reading method thereof
    7.
    发明授权
    Solid state image pickup device and signal reading method thereof 有权
    固体摄像装置及其信号读取方法

    公开(公告)号:US06784928B1

    公开(公告)日:2004-08-31

    申请号:US09210997

    申请日:1998-12-15

    IPC分类号: H04N5225

    摘要: A solid state image pickup device has a drive unit with an all pixel drive mode for reading all pixels in a horizontal direction and a pixel skip drive mode for reading pixels in the horizontal direction by skipping some pixels, and a plurality of read-out systems for reading pixels. In the all pixel drive mode, signals of pixels are divisionally read by the plurality of read-out systems, and in the pixel skip drive mode, signals of pixels are read by one of the plurality of read-out systems. In this manner, in the pixel skip drive mode, the power consumption can be reduced and a difference between output signal levels to be caused by a variation in characteristics of elements of the read-out system can be suppressed.

    摘要翻译: 固态图像拾取装置具有驱动单元,其具有用于读取水平方向上的所有像素的全像素驱动模式和用于通过跳过某些像素来读取水平方向上的像素的像素跳过驱动模式,以及多个读出系统 用于读取像素。 在全像素驱动模式中,由多个读出系统分割地读取像素的信号,并且在像素跳过驱动模式中,多个读出系统之一读取像素的信号。 以这种方式,在像素跳过驱动模式中,可以降低功耗,并且可以抑制由读出系统的元件的特性变化引起的输出信号电平之间的差异。

    Image sensing device using MOS-type image sensing element whose threshold voltage of charge transfer switch and reset switch is different from that of signal output transistor
    8.
    发明授权
    Image sensing device using MOS-type image sensing element whose threshold voltage of charge transfer switch and reset switch is different from that of signal output transistor 有权
    使用MOS电荷感应元件的图像感测装置,其电荷转移开关和复位开关的阈值电压与信号输出晶体管的阈值电压不同

    公开(公告)号:US06670990B1

    公开(公告)日:2003-12-30

    申请号:US09161402

    申请日:1998-09-28

    IPC分类号: H04N314

    摘要: In a photoelectric conversion device having a plurality of pixel cells each of which includes a photoelectric conversion element, a field effect transistor having the gate area for storing signal charge generated by the photoelectric conversion element and the source-drain path for outputting a signal corresponding to the signal charge stored in the gate, a first power supply line for supplying electric power to the field effect transistor, and a first switch connected between the field effect transistor and the first power supply line, when a reset voltage for resetting the gate of the field effect transistor is Vsig0, a threshold voltage of the field effect transistor is Vth, current flowing through the field effect transistor is Ia, a voltage applied via the first power supply line is Vc1, and a series resistance of the first switch is Ron, each pixel cell is configured to satisfy a condition determined by Vc1−Ron×Ia>Vsig0−Vth.

    摘要翻译: 在具有包括光电转换元件的多个像素单元的光电转换装置中,具有用于存储由光电转换元件生成的信号电荷的栅极区域的场效应晶体管和用于输出与光电转换元件对应的信号的源极 - 漏极路径 存储在栅极中的信号电荷,用于向场效应晶体管提供电力的第一电源线和连接在场效应晶体管和第一电源线之间的第一开关,当用于复位栅极的复位电压 场效应晶体管为Vsig0,场效应晶体管的阈值电压为Vth,流过场效应晶体管的电流为Ia,经由第一电源线施加的电压为Vc1,第一开关的串联电阻为Ron, 每个像素单元被配置为满足由Vc1-RonxIa> Vsig0-Vth确定的条件。

    Solid-state image pickup element
    9.
    发明授权
    Solid-state image pickup element 失效
    固态摄像元件

    公开(公告)号:US06831685B1

    公开(公告)日:2004-12-14

    申请号:US09316947

    申请日:1999-05-24

    IPC分类号: H04N964

    摘要: This invention is to provide a solid-state image pickup element including a sensor unit including a plurality of lines of photoelectric conversion units for generating charges from received light by photoelectric conversion, a memory unit including a plurality of lines of storage units for storing signals from the plurality of lines of photoelectric conversion units, a transfer unit for transferring a signal from the sensor unit to the memory unit, a control unit for causing storage units of an arbitrary block in the memory unit to output an image signal from the photoelectric conversion units and causing the photoelectric conversion units corresponding to the storage units of the arbitrary block to output a noise signal, and a subtracting unit for calculating a difference between the image signal and the noise signal.

    摘要翻译: 本发明提供一种固态摄像元件,包括:传感器单元,包括多条光电转换单元,用于通过光电转换从接收的光产生电荷;存储单元,包括多行存储单元,用于存储来自 多条光电转换单元,用于将信号从传感器单元传送到存储单元的转移单元,用于使存储单元中的任意块的存储单元输出来自光电转换单元的图像信号的控制单元 并且使与所述任意块的存储单元对应的光电转换单元输出噪声信号,以及用于计算图像信号和噪声信号之间的差的减法单元。