公开(公告)号：US10910401B2

公开(公告)日：2021-02-02

申请号：US16559165

申请日：2019-09-03

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Keiichi Sawa ,  Kazuhiro Matsuo ,  Kazuhisa Matsuda ,  Hiroyuki Yamashita ,  Yuta Saito ,  Shinji Mori ,  Masayuki Tanaka ,  Kenichiro Toratani ,  Atsushi Takahashi ,  Shouji Honda

IPC: H01L27/11582 ,  H01L29/792 ,  H01L27/11578 ,  H01L27/11519 ,  H01L27/1157

Abstract: In one embodiment, a semiconductor device includes a substrate, insulating films and first films alternately stacked on the substrate, at least one of the first films including an electrode layer and a charge storage layer provided on a face of the electrode layer via a first insulator, and a semiconductor layer provided on a face of the charge storage layer via a second insulator. The device further includes at least one of a first portion including nitrogen and provided between the first insulator and the charge storage layer with an air gap provided in the first insulator, a second portion including nitrogen, provided between the charge storage layer and the second insulator, and including a portion protruding toward the charge storage layer, and a third portion including nitrogen and provided between the second insulator and the semiconductor layer with an air gap provided in the first insulator.

公开(公告)号：US10593542B2

公开(公告)日：2020-03-17

申请号：US15695203

申请日：2017-09-05

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Takashi Furuhashi ,  Masayuki Tanaka ,  Shinji Mori ,  Kenichiro Toratani

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/28 ,  H01L27/11582

Abstract: According to an embodiment, a manufacturing method of a semiconductor device includes: carrying a substrate alternately stacked an electrode layer and an insulation layer into a chamber; increasing the temperature in the chamber to a predetermined temperature; and supplying hydrogen and material gas including metal simultaneously into the chamber, and supplying oxidizing gas the partial pressure ratio of which to the hydrogen is set so as to provide an atmosphere of reducing the electrode layer, by using an ALD method, and thereby forming, on a surface of the electrode layer and a surface of the insulation layer, a metal oxide layer obtained by oxidizing the metal.

公开(公告)号：US10304850B2

公开(公告)日：2019-05-28

申请号：US15011911

申请日：2016-02-01

Applicant: Toshiba Memory Corporation

Inventor： Kazuhiro Matsuo ,  Masayuki Tanaka ,  Shinji Mori ,  Kenichiro Toratani

IPC: H01L27/115 ,  H01L29/792 ,  H01L27/11582 ,  H01L49/02

Abstract: A semiconductor memory device according to an embodiment includes a substrate, a stacked body provided on the substrate, a plurality of electrode films being stacked to be separated from each other in the stacked body, a semiconductor pillar piercing the plurality of electrode films, a first insulating film provided between the semiconductor pillar and the electrode films, a second insulating film provided between the semiconductor pillar and the first insulating film; and a third insulating film provided between the first insulating film and the electrode films. The first insulating film includes silicon, nitrogen, oxygen, and carbon.

公开(公告)号：US09892930B1

公开(公告)日：2018-02-13

申请号：US15412396

申请日：2017-01-23

Applicant: Toshiba Memory Corporation

Inventor： Keiichi Sawa ,  Shinji Mori ,  Masayuki Tanaka ,  Katsuyuki Kitamoto

IPC: H01L27/115 ,  H01L21/28 ,  H01L27/1157 ,  H01L27/11582 ,  H01L23/522 ,  H01L23/528

CPC classification number: H01L21/28282 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/1157 ,  H01L27/11582

Abstract: A semiconductor memory device includes a first electrode layer; a second electrode layer provided above the first electrode layer; a first insulating oxide layer provided between the first and second electrode layers; a semiconductor layer extending through the first electrode layer, the first insulating oxide layer and the second electrode layer that are stacked in the first direction; and a second insulating oxide layer extending in the first direction between the semiconductor layer and the first insulating oxide layer, the second insulating oxide layer being in contact with the first insulating oxide layer. At least one of the first insulating oxide layer and the second insulating oxide layer includes nitrogen atoms. The nitrogen atoms are distributed around an interface between the first insulating oxide layer and the second insulating oxide layer, or distributed in the vicinity of the interface.