公开(公告)号：US10453729B2

公开(公告)日：2019-10-22

申请号：US15915559

申请日：2018-03-08

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tatsuhiko Koide ,  Hiroyasu Iimori ,  Shinsuke Kimura

IPC: H01L21/68 ,  H01L21/673 ,  H01L21/02 ,  H01L21/67 ,  H01L21/677

Abstract: According to an embodiment, a substrate treatment apparatus includes a support unit, a silane coupler supplier, an organic functional group remover, and a drive mechanism. The support supports a substrate having a patterned film. The silane coupler supplier supplies the film with a silane coupler. The organic functional group remover removes an organic functional group from the film silylated with the silane coupler. The drive mechanism drives at least one of the support, the silane coupler supplier, and the organic functional group remover in such a way that the supply of the silane coupler and the supply of light or gas are repeated by a predetermined number.

公开(公告)号：US20190080947A1

公开(公告)日：2019-03-14

申请号：US15915559

申请日：2018-03-08

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tatsuhiko Koide ,  Hiroyasu Iimori ,  Shinsuke Kimura

IPC: H01L21/68 ,  H01L21/673 ,  H01L21/677 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L21/68 ,  H01L21/02164 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67115 ,  H01L21/67379 ,  H01L21/67383 ,  H01L21/67706 ,  H01L21/6776

Abstract: According to an embodiment, a substrate treatment apparatus includes a support unit, a silane coupler supplier, an organic functional group remover, and a drive mechanism. The support supports a substrate having a patterned film. The silane coupler supplier supplies the film with a silane coupler. The organic functional group remover removes an organic functional group from the film silylated with the silane coupler. The drive mechanism drives at least one of the support, the silane coupler supplier, and the organic functional group remover in such a way that the supply of the silane coupler and the supply of light or gas are repeated by a predetermined number.

公开(公告)号：US09859111B2

公开(公告)日：2018-01-02

申请号：US14925805

申请日：2015-10-28

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Yoshihiro Ogawa ,  Tatsuhiko Koide ,  Shinsuke Kimura ,  Hisashi Okuchi ,  Hiroshi Tomita

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/02 ,  H01L21/67 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/0206 ,  H01L21/02043 ,  H01L21/02211 ,  H01L21/31116 ,  H01L21/32135 ,  H01L21/67028

Abstract: In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A removing unit removes the water repellent protective film with the convex pattern being left.