公开(公告)号：US20230284366A1

公开(公告)日：2023-09-07

申请号：US18298927

申请日：2023-04-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tai-Yu CHEN ,  Cho-Ying LIN ,  Sagar Deepak KHIVSARA ,  Hsiang CHEN ,  Chieh HSIEH ,  Sheng-Kang YU ,  Shang-Chieh CHIEN ,  Kai Tak LAM ,  Li-Jui CHEN ,  Heng-Hsin LIU ,  Zhiqiang WU

IPC: H05G2/00 ,  G03F7/20

CPC classification number: H05G2/008 ,  H05G2/006 ,  G03F7/7055 ,  G03F7/7085 ,  G03F7/70033

Abstract: A light source is provided capable of maintaining the temperature of a collector surface at or below a predetermined temperature. The light source in accordance with various embodiments of the present disclosure includes a processor, a droplet generator for generating a droplet to create extreme ultraviolet light, a collector for reflecting the extreme ultraviolet light into an intermediate focus point, a light generator for generating pre-pulse light and main pulse light, and a thermal image capture device for capturing a thermal image from a reflective surface of the collector.

公开(公告)号：US20230273534A1

公开(公告)日：2023-08-31

申请号：US18311795

申请日：2023-05-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chieh HSIEH ,  Tai-Yu CHEN ,  Cho-Ying LIN ,  Heng-Hsin LIU ,  Li-Jui CHEN ,  Shang-Chieh CHIEN

IPC: G03F7/00 ,  G02B17/06 ,  H05G2/00

CPC classification number: G03F7/70925 ,  G03F7/70033 ,  G02B17/0663 ,  G03F7/70491 ,  H05G2/008 ,  G03F7/70808

Abstract: A lithography system is provided capable of deterring contaminants, such as tin debris from entering into the scanner. The lithography system in accordance with various embodiments of the present disclosure includes a processor, an extreme ultraviolet light source, a scanner, and a hollow connection member. The light source includes a droplet generator for generating a droplet, a collector for reflecting extreme ultraviolet light into an intermediate focus point, and a light generator for generating pre-pulse light and main pulse light. The droplet generates the extreme ultraviolet light in response to the droplet being illuminated with the pre-pulse light and the main pulse light. The scanner includes a wafer stage. The hollow connection member includes an inlet that is in fluid communication with an exhaust pump. The hollow connection member provides a hollow space in which the intermediate focus point is disposed. The hollow connection member is disposed between the extreme ultraviolet light source and the scanner.

公开(公告)号：US20230060899A1

公开(公告)日：2023-03-02

申请号：US17461744

申请日：2021-08-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chieh HSIEH ,  Tai-Yu CHEN ,  Cho-Ying LIN ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: G03F7/20 ,  H05G2/00 ,  G02B17/06

Abstract: A lithography system is provided capable of deterring contaminants, such as tin debris from entering into the scanner. The lithography system in accordance with various embodiments of the present disclosure includes a processor, an extreme ultraviolet light source, a scanner, and a hollow connection member. The light source includes a droplet generator for generating a droplet, a collector for reflecting extreme ultraviolet light into an intermediate focus point, and a light generator for generating pre-pulse light and main pulse light. The droplet generates the extreme ultraviolet light in response to the droplet being illuminated with the pre-pulse light and the main pulse light. The scanner includes a wafer stage. The hollow connection member includes an inlet that is in fluid communication with an exhaust pump. The hollow connection member provides a hollow space in which the intermediate focus point is disposed. The hollow connection member is disposed between the extreme ultraviolet light source and the scanner.

公开(公告)号：US20210349396A1

公开(公告)日：2021-11-11

申请号：US17193827

申请日：2021-03-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tai-Yu CHEN ,  Sagar Deepak KHIVSARA ,  Kuo-An LIU ,  Chieh HSIEH ,  Shang-Chieh CHIEN ,  Gwan-Sin CHANG ,  Kai Tak LAM ,  Li-Jui CHEN ,  Heng-Hsin LIU ,  Chung-Wei WU ,  Zhiqiang WU

IPC: G03F7/20

Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. The photolithography system senses contamination of a collector mirror by the tin droplets and adjusts the flow of a buffer fluid to reduce the contamination.

公开(公告)号：US20210223701A1

公开(公告)日：2021-07-22

申请号：US17222109

申请日：2021-04-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jen-Yang CHUNG ,  Chieh HSIEH ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: G03F7/20 ,  G03F1/24 ,  H05G2/00

Abstract: A method of controlling a droplet illumination module/droplet detection module system of an extreme ultraviolet (EUV) radiation source includes irradiating a target droplet with light from a droplet illumination module and detecting light reflected and/or scattered by the target droplet. The method includes determining whether an intensity of the detected light is within an acceptable range. In response to determining that the intensity of the detected light is not within the acceptable range, a parameter of the droplet illumination module is automatically adjusted to set the intensity of the detected light within the acceptable range.

公开(公告)号：US20210041787A1

公开(公告)日：2021-02-11

申请号：US17068197

申请日：2020-10-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chieh HSIEH ,  Kuan-Hung CHEN ,  Chun-Chia HSU ,  Shang-Chieh CHIEN ,  Bo-Tsun LIU ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: G03F7/20

Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. An energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. A feedback controller is configured to adjust parameters of the droplet generator and/or the excitation laser based on the variation in EUV energy.

公开(公告)号：US20190094718A1

公开(公告)日：2019-03-28

申请号：US16021461

申请日：2018-06-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi YANG ,  Ssu-Yu CHEN ,  Shang-Chieh CHIEN ,  Chieh HSIEH ,  Tzung-Chi FU ,  Bo-Tsun LIU ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: G03F7/20

Abstract: A radiation source apparatus is provided. The radiation source apparatus includes a chamber, a target droplet generator, an exhaust module, a measuring device, and a controller. The target droplet generator is configured to provide a plurality of target droplets to the chamber. The exhaust module is configured to extract debris corresponding to the target droplets out of the chamber according to a first gas flow rate. The measuring device is configured to measure concentration of the debris in the chamber. The controller is configured to adjust the first gas flow rate according to the measured concentration of the debris.

公开(公告)号：US20240377764A1

公开(公告)日：2024-11-14

申请号：US18781721

申请日：2024-07-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Yu TU ,  Chieh HSIEH ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: G03F7/00 ,  H05G2/00

Abstract: An extreme ultraviolet (EUV) photolithography system detects debris travelling from an EUV generation chamber to a scanner. The photolithography system includes a detection light source and a sensor. The detection light source outputs a detection light across a path of travel of debris particles from the EUV generation chamber. The sensor senses debris particles by detecting interaction of the debris particles with the detection light.

公开(公告)号：US20200348607A1

公开(公告)日：2020-11-05

申请号：US16927142

申请日：2020-07-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi YANG ,  Ssu-Yu CHEN ,  Shang-Chieh CHIEN ,  Chieh HSIEH ,  Tzung-Chi FU ,  Bo-Tsun LIU ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: G03F7/20 ,  H05G2/00

Abstract: A radiation source apparatus is provided. The radiation source apparatus includes a chamber, an exhaust module, a measuring device, a gas supply module and a controller. The exhaust module is configured to extract debris caused by unstable target droplets out of the chamber according to a first gas flow rate. The measuring device is configured to measure concentration of the debris in the chamber. The gas supply module is configured to provide a gas into the chamber according to a second gas flow rate. The controller is configured to adjust the first gas flow rate and the second gas flow according to the measured concentration of the debris.

公开(公告)号：US20200133136A1

公开(公告)日：2020-04-30

申请号：US16261695

申请日：2019-01-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Kuan-Hung CHEN ,  Chieh HSIEH ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: G03F7/20

Abstract: A method for operating a semiconductor apparatus includes generating a plurality of target droplets, deforming the target droplets into a plurality of target plumes respectively, changing an orientation of at least one of the target plumes, and generating a plurality of EUV radiations from the target plumes respectively. At least one of the EUV radiations irradiates an area on the light collector different from other EUV radiations in response to the orientation of the at least one of the target plumes.