公开(公告)号：US11289568B2

公开(公告)日：2022-03-29

申请号：US16410259

申请日：2019-05-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Yuan Shih ,  Kai-Fung Chang ,  Shih-Fen Huang ,  Wen-Chuan Tai ,  Yi-Chuan Teng ,  Yi Heng Tsai ,  You-Ru Lin ,  Yen-Wen Chen ,  Anderson Lin ,  Fu-Chun Huang ,  Chun-Ren Cheng ,  Ivan Hua-Shu Wu ,  Fan Hu ,  Ching-Hui Lin ,  Yan-Jie Liao

IPC: H01L49/02 ,  H01L23/58 ,  H01L23/00

Abstract: The present disclosure relates to a MIM (metal-insulator-metal) capacitor having a top electrode overlying a substrate. A passivation layer overlies the top electrode. The passivation layer has a step region that continuously contacts and extends from a top surface of the top electrode to sidewalls of the top electrode. A metal frame overlies the passivation layer. The metal frame continuously contacts and extends from a top surface of the passivation layer to upper sidewalls of the passivation layer in the step region. The metal frame has a protrusion that extends through the passivation layer and contacts the top surface of the top electrode.

公开(公告)号：US20210389273A1

公开(公告)日：2021-12-16

申请号：US16900989

申请日：2020-06-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Hui Lin ,  Chun-Ren Cheng ,  Jui-Cheng Huang ,  Shih-Fen Huang ,  Tung-Tsun Chen ,  Yu-Jie Huang ,  Fu-Chun Huang

IPC: G01N27/414 ,  H01L23/31 ,  H01L23/522 ,  H01L23/29 ,  H01L23/64 ,  H01L29/786 ,  H01L21/8234

Abstract: An integrated circuit device includes a device layer, an interconnect structure, a conductive layer, a passivation layer and a bioFET. The device layer has a first side and a second side and include source/drain regions and a channel region between the source/drain regions. The interconnect structure is disposed at the first side of the device layer. The conductive layer is disposed at the second side of the device layer. The passivation layer is continuously disposed on the conductive layer and the channel region and exposes a portion of the conductive layer. The bioFET includes the source/drain regions, the channel region and a portion of the passivation layer on the channel region.

公开(公告)号：US10984211B1

公开(公告)日：2021-04-20

申请号：US16656882

申请日：2019-10-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Hui Lin ,  Chun-Ren Cheng ,  Shih-Fen Huang ,  Fu-Chun Huang

IPC: G06K9/00 ,  H01L41/113 ,  G01N27/414

Abstract: The structure of a semiconductor device with an array of bioFET sensors, a biometric fingerprint sensor, and a temperature sensor and a method of fabricating the semiconductor device are disclosed. A method for fabricating the semiconductor device includes forming a gate electrode on a first side of a semiconductor substrate, forming a channel region between source and drain regions within the semiconductor substrate, and forming a piezoelectric sensor region on a second side of the semiconductor substrate. The second side is substantially parallel and opposite to the first side. The method further includes forming a temperature sensing electrode on the second side during the forming of the piezoelectric sensor region, forming a sensing well on the channel region, and binding capture reagents on the sensing well.

公开(公告)号：US11808731B2

公开(公告)日：2023-11-07

申请号：US17135498

申请日：2020-12-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jui-Cheng Huang ,  Yi-Hsien Chang ,  Chin-Hua Wen ,  Chun-Ren Cheng ,  Shih-Fen Huang ,  Tung-Tsun Chen ,  Yu-Jie Huang ,  Ching-Hui Lin ,  Sean Cheng ,  Hector Chang

IPC: G01N27/414 ,  B01L3/00 ,  B01F31/85 ,  B01F33/30 ,  H10N30/00 ,  H10N30/20 ,  G01N33/543 ,  C12Q1/6825

CPC classification number: G01N27/4145 ,  B01F31/85 ,  B01F33/30 ,  B01F33/3045 ,  B01L3/502707 ,  B01L3/502715 ,  B01L3/502761 ,  B01L3/502792 ,  G01N33/5438 ,  H10N30/1051 ,  H10N30/2042 ,  H10N30/2047 ,  B01L2200/12 ,  B01L2300/06 ,  B01L2300/0645 ,  B01L2300/0663 ,  B01L2300/0819 ,  B01L2300/0887 ,  B01L2300/1827 ,  C12Q1/6825

Abstract: A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.

公开(公告)号：US10955379B2

公开(公告)日：2021-03-23

申请号：US16400500

申请日：2019-05-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Hui Lin ,  Chun-Ren Cheng ,  Shih-Fen Huang ,  Fu-Chun Huang

IPC: G01N27/414 ,  G01N27/30 ,  B01L3/00

Abstract: A sensor array includes a semiconductor substrate, a first plurality of FET sensors and a second plurality of FET sensors. Each of the FET sensors includes a channel region between a source and a drain region in the semiconductor substrate and underlying a gate structure disposed on a first side of the channel region, and a dielectric layer disposed on a second side of the channel region opposite from the first side of the channel region. A first plurality of capture reagents is coupled to the dielectric layer over the channel region of the first plurality of FET sensors, and a second plurality of capture reagents is coupled to the dielectric layer over the channel region of the second plurality of FET sensors. The second plurality of capture reagents is different from the first plurality of capture reagents.

公开(公告)号：US20170343498A1

公开(公告)日：2017-11-30

申请号：US15216853

申请日：2016-07-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Alexander Kalnitsky ,  Yi-Hsien Chang ,  Chun-Ren Cheng ,  Jui-Cheng Huang ,  Shih-Fen Huang ,  Tung-Tsun Chen ,  Ching-Hui Lin

IPC: G01N27/04 ,  H01L21/768 ,  H01L23/522 ,  H01L29/786

Abstract: A biosensor with a heater embedded therein is provided. A semiconductor substrate comprises a source region and a drain region. The heater is under the semiconductor substrate. A sensing well is over the semiconductor substrate, laterally between the source region and the drain region. A sensing layer lines the sensing well. A method for manufacturing the biosensor is also provided.