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    VHF etch barrier for semiconductor integrated microsystem
    11.
    发明授权
    VHF etch barrier for semiconductor integrated microsystem 有权
    用于半导体集成微系统的VHF蚀刻屏障

    公开(公告)号：US09449867B2

    公开(公告)日：2016-09-20

    申请号：US14306643

    申请日：2014-06-17

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Tzu-Heng Wu ,  Yi-Hsien Chang ,  Kai-Chih Liang ,  Yi Heng Tsai ,  Wei-Cheng Shen ,  Chun-Ren Cheng ,  Chun-Wen Cheng ,  Han-Chin Chiu

    IPC: B81C3/00 ,  B81B7/00 ,  H01L21/762 ,  H01L23/00 ,  H01L27/092

    CPC classification number: H01L21/76232 ,  B81B7/0025 ,  B81B7/0054 ,  B81B7/008 ,  B81C1/00238 ,  B81C1/00801 ,  B81C3/001 ,  H01L24/89 ,  H01L27/092

    Abstract: The present disclosure relates to an integrated microsystem with a protection barrier structure, and an associated method. In some embodiments, the integrated microsystem comprises a first die having a plurality of CMOS devices disposed thereon, a second die having a plurality of MEMS devices disposed thereon and a vapor hydrofluoric acid (vHF) etch barrier structure disposed between the first die and the second die. The second die is bonded to the first die at a bond interface region. The vHF etch barrier structure comprises a vHF barrier layer over an upper surface of the first die, and a stress reduction layer arranged between the vHF etch barrier layer and the upper surface of the first die.

    Abstract translation: 本公开涉及具有保护屏障结构的集成微系统以及相关联的方法。 在一些实施例中，集成微系统包括具有设置在其上的多个CMOS器件的第一管芯，具有设置在其上的多个MEMS器件的第二管芯和设置在第一管芯和第二管芯之间的蒸气氢氟酸（vHF） 死。 第二管芯在接合界面区域与第一管芯接合。 vHF蚀刻阻挡结构包括位于第一管芯的上表面上方的vHF阻挡层，以及布置在第一管芯的上表面之间的应力减小层。

    METHODS FOR PACKAGING A MICROELECTROMECHANICAL SYSTEM (MEMS) WAFER AND APPLICATION-SPECIFIC INTEGRATED CIRCUIT (ASIC) DIES USING THROUGH MOLD VIAS (TMVS)
    13.
    发明申请
    METHODS FOR PACKAGING A MICROELECTROMECHANICAL SYSTEM (MEMS) WAFER AND APPLICATION-SPECIFIC INTEGRATED CIRCUIT (ASIC) DIES USING THROUGH MOLD VIAS (TMVS) 有权
    用于通过模具VIAS（TMVS）包装微电子机械系统（MEMS）波形和应用特定集成电路（ASIC）的方法

    公开(公告)号：US20160046483A1

    公开(公告)日：2016-02-18

    申请号：US14457160

    申请日：2014-08-12

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chun-Wen Cheng ,  Hung-Chia Tsai

    IPC: B81B7/00 ,  B81C1/00

    CPC classification number: B81B7/008 ,  B81B7/0006 ,  B81B7/0074 ,  B81C1/0023 ,  H01L24/19 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2924/00014

    Abstract: A method for packaging a microelectromechanical system (MEMS) device with an integrated circuit die using through mold vias (TMVs) is provided. According to the method, a MEMS substrate having a MEMS device is provided. A cap substrate is secured to a top surface of the MEMS substrate. The cap substrate includes a recess corresponding to the MEMS device in a bottom surface of the cap substrate. An integrated circuit die is secured to a top surface of the cap substrate over the recess. A housing covering the MEMS substrate, the cap substrate, and the integrated circuit die is formed. A through mold via (TMV) electrically coupled with the integrated circuit die and extending between a top surface of the housing and the integrated circuit die is formed. The structure resulting from application of the method is also provided.

    Abstract translation: 提供了一种用于通过模具通孔（TMV）封装具有集成电路管芯的微机电系统（MEMS）装置的方法。 根据该方法，提供具有MEMS器件的MEMS基板。 盖基板被固定到MEMS基板的顶表面。 盖基板包括在盖基板的底表面中对应于MEMS器件的凹部。 集成电路管芯在凹部上固定到盖衬底的顶表面上。 形成覆盖MEMS基板，盖基板和集成电路管芯的壳体。 形成与集成电路管芯电耦合并且在壳体的顶表面和集成电路管芯之间延伸的贯通模通孔（TMV）。 还提供了应用该方法产生的结构。

    METHOD FOR MANUFACTURING A MICROELECTROMECHANICAL SYSTEMS (MEMS) DEVICE WITH DIFFERENT ELECTRICAL POTENTIALS AND AN ETCH STOP
    14.
    发明申请
    METHOD FOR MANUFACTURING A MICROELECTROMECHANICAL SYSTEMS (MEMS) DEVICE WITH DIFFERENT ELECTRICAL POTENTIALS AND AN ETCH STOP 有权
    用于制造具有不同电位和延迟的微电子系统（MEMS）器件的方法

    公开(公告)号：US20160031703A1

    公开(公告)日：2016-02-04

    申请号：US14880375

    申请日：2015-10-12

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Yu-Chia Liu ,  Chia-Hua Chu ,  Kuei-Sung Chang ,  Chun-Wen Cheng

    IPC: B81B7/00 ,  B81C1/00

    CPC classification number: B81B7/007 ,  B81B2203/0163 ,  B81B2203/0307 ,  B81B2203/04 ,  B81C1/00166 ,  B81C1/00301 ,  B81C1/00801 ,  B81C2203/0118

    Abstract: A semiconductor structure for a microelectromechanical systems (MEMS) device is provided. A first substrate region includes an electrical isolation layer arranged over a top surface of the first substrate region. A second substrate region is arranged over the electrical isolation layer and includes a MEMS device structure arranged within the second substrate region. The MEMS device structure includes a fixed mass and a proof mass. A dielectric region is arranged over the electrical isolation layer around the fixed mass. A fixed mass electrode is arranged around the dielectric region, and extends through the second substrate region to the electrical isolation layer. An isolated electrode extends through the second substrate region and the electrical isolation layer to the first substrate region on an opposite side of the proof mass as the fixed mass electrode. The method of forming the semiconductor structure is also provided.

    Abstract translation: 提供了一种用于微机电系统（MEMS）装置的半导体结构。 第一衬底区域包括布置在第一衬底区域的顶表面上方的电隔离层。 第二衬底区域布置在电隔离层上方并且包括布置在第二衬底区域内的MEMS器件结构。 MEMS器件结构包括固定质量和检验质量。 电介质区域布置在固定质量块周围的电隔离层的上方。 固定质量电极布置在电介质区周围，并且延伸穿过第二衬底区域到电隔离层。 隔离电极通过第二衬底区域和电隔离层延伸到与固定质量电极相反的一侧的第一衬底区域。 还提供了形成半导体结构的方法。

    Method for manufacturing a microelectromechanical systems (MEMS) device with different electrical potentials and an etch stop
    15.
    发明授权
    Method for manufacturing a microelectromechanical systems (MEMS) device with different electrical potentials and an etch stop 有权
    用于制造具有不同电位和蚀刻停止的微机电系统（MEMS）器件的方法

    公开(公告)号：US09221674B1

    公开(公告)日：2015-12-29

    申请号：US14450505

    申请日：2014-08-04

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Yu-Chia Liu ,  Chia-Hua Chu ,  Kuei-Sung Chang ,  Chun-Wen Cheng

    IPC: H01L21/00 ,  B81B7/00 ,  B81C1/00

    CPC classification number: B81B7/007 ,  B81B2203/0163 ,  B81B2203/0307 ,  B81B2203/04 ,  B81C1/00166 ,  B81C1/00301 ,  B81C1/00801 ,  B81C2203/0118

    Abstract: A semiconductor structure for a microelectromechanical systems (MEMS) device is provided. A first substrate region includes an electrical isolation layer arranged over a top surface of the first substrate region. A second substrate region is arranged over the electrical isolation layer and includes a MEMS device structure arranged within the second substrate region. The MEMS device structure includes a fixed mass and a proof mass. A dielectric region is arranged over the electrical isolation layer around the fixed mass. A fixed mass electrode is arranged around the dielectric region, and extends through the second substrate region to the electrical isolation layer. An isolated electrode extends through the second substrate region and the electrical isolation layer to the first substrate region on an opposite side of the proof mass as the fixed mass electrode. The method of forming the semiconductor structure is also provided.

    Abstract translation: 提供了一种用于微机电系统（MEMS）装置的半导体结构。 第一衬底区域包括布置在第一衬底区域的顶表面上方的电隔离层。 第二衬底区域布置在电隔离层上方并且包括布置在第二衬底区域内的MEMS器件结构。 MEMS器件结构包括固定质量和检验质量。 电介质区域布置在固定质量块周围的电隔离层的上方。 固定质量电极布置在电介质区周围，并且延伸穿过第二衬底区域到电隔离层。 隔离电极通过第二衬底区域和电隔离层延伸到与固定质量电极相反的一侧的第一衬底区域。 还提供了形成半导体结构的方法。

    VHF ETCH BARRIER FOR SEMICONDUCTOR INTEGRATED MICROSYSTEM
    16.
    发明申请
    VHF ETCH BARRIER FOR SEMICONDUCTOR INTEGRATED MICROSYSTEM 有权
    用于SEMICONDUCTOR INTEGRATED MICROSYSTEM的VHF ETCH BARRIER

    公开(公告)号：US20150364363A1

    公开(公告)日：2015-12-17

    申请号：US14306643

    申请日：2014-06-17

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Tzu-Heng Wu ,  Yi-Hsien Chang ,  Kai-Chih Liang ,  Yi Heng Tsai ,  Wei-Cheng Shen ,  Chun-Ren Cheng ,  Chun-Wen Cheng ,  Han-Chin Chiu

    IPC: H01L21/762 ,  B81C3/00 ,  B81B7/00 ,  H01L27/092 ,  H01L23/00

    CPC classification number: H01L21/76232 ,  B81B7/0025 ,  B81B7/0054 ,  B81B7/008 ,  B81C1/00238 ,  B81C1/00801 ,  B81C3/001 ,  H01L24/89 ,  H01L27/092

    Abstract: The present disclosure relates to an integrated microsystem with a protection barrier structure, and an associated method. In some embodiments, the integrated microsystem comprises a first die having a plurality of CMOS devices disposed thereon, a second die having a plurality of MEMS devices disposed thereon and a vapor hydrofluoric acid (vHF) etch barrier structure disposed between the first die and the second die. The second die is bonded to the first die at a bond interface region. The vHF etch barrier structure comprises a vHF barrier layer over an upper surface of the first die, and a stress reduction layer arranged between the vHF etch barrier layer and the upper surface of the first die.

    Abstract translation: 本公开涉及具有保护屏障结构的集成微系统以及相关联的方法。 在一些实施例中，集成微系统包括具有设置在其上的多个CMOS器件的第一管芯，具有设置在其上的多个MEMS器件的第二管芯和设置在第一管芯和第二管芯之间的蒸气氢氟酸（vHF） 死。 第二管芯在接合界面区域与第一管芯接合。 vHF蚀刻阻挡结构包括位于第一管芯的上表面上方的vHF阻挡层，以及布置在第一管芯的上表面之间的应力减小层。

    CMOS-MEMS Integrated Flow for Making a Pressure Sensitive Transducer
    17.
    发明申请
    CMOS-MEMS Integrated Flow for Making a Pressure Sensitive Transducer 有权
    用于制造压敏传感器的CMOS-MEMS集成流

    公开(公告)号：US20150060954A1

    公开(公告)日：2015-03-05

    申请号：US14013080

    申请日：2013-08-29

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chun-Wen Cheng ,  Kai-Chih Liang ,  Chia-Hua Chu

    IPC: B81B7/02 ,  B81B3/00 ,  B81C1/00

    CPC classification number: B81C1/00238 ,  B81B2201/0264

    Abstract: A sensor is made up of two substrates which are adhered together. A first substrate includes a pressure-sensitive micro-electrical-mechanical (MEMS) structure and a conductive contact structure that protrudes outwardly beyond a first face of the first substrate. A second substrate includes a complementary metal oxide semiconductor (CMOS) device and a receiving structure made up of sidewalls that meet a conductive surface which is recessed from a first face of the second substrate. A conductive bonding material physically adheres the conductive contact structure to the conductive surface and electrically couples the MEMS structure to the CMOS device.

    Abstract translation: 传感器由粘合在一起的两个基板组成。 第一衬底包括压敏微电机械（MEMS）结构和向外突出超过第一衬底的第一面的导电接触结构。 第二基板包括互补金属氧化物半导体（CMOS）器件和由侧壁构成的接收结构，所述接收结构满足从第二基板的第一面凹入的导电表面。 导电接合材料将导电接触结构物理地粘附到导电表面并将MEMS结构电耦合到CMOS器件。

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