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公开(公告)号：US20220230974A1
公开(公告)日：2022-07-21
申请号：US17713907
申请日：2022-04-05
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Jun-De Jin
IPC: H01L23/66 , H01L29/06 , H01L23/528 , H01L29/417 , H01L27/088
Abstract: Devices and methods for enhancing insertion loss performance of an antenna switch are disclosed. In one example, a semiconductor device formed to serve as an antenna switch is disclosed. The semiconductor device includes: a substrate, a dielectric layer and a polysilicon region. The substrate includes: an intrinsic substrate; a metal-oxide-semiconductor device extending into the intrinsic substrate; and at least one isolation feature extending into and in contact with the intrinsic substrate. The at least one isolation feature is disposed adjacent to the metal-oxide-semiconductor device.
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公开(公告)号：US11335654B2
公开(公告)日：2022-05-17
申请号：US17111343
申请日：2020-12-03
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Jun-De Jin
IPC: H01L23/66 , H01L29/06 , H01L23/528 , H01L29/417 , H01L27/088
Abstract: Devices and methods for enhancing insertion loss performance of an antenna switch are disclosed. In one example, a semiconductor device formed to serve as an antenna switch is disclosed. The semiconductor device includes: a substrate, a dielectric layer and a polysilicon region. The substrate includes: an intrinsic substrate; a metal-oxide-semiconductor device extending into the intrinsic substrate; and at least one isolation feature extending into and in contact with the intrinsic substrate. The at least one isolation feature is disposed adjacent to the metal-oxide-semiconductor device.
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公开(公告)号：US10673394B2
公开(公告)日：2020-06-02
申请号：US16041346
申请日：2018-07-20
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Jun-De Jin
Abstract: A power amplifier (PA) cell is coupled to an input signal source an a load, and includes a transistor coupled to the load; a first inductor coupled to a gate of the transistor; and a second inductor coupled to a source of the transistor, wherein the first inductor and the second inductor each includes a first conductive coil and a second conductive coil, respectively, having first and second inductance values, respectively, such that the power cell is coupled to the input signal source without an input impedance matching circuit disposed between the gate of the transistor and the input signal source, and without an output impedance matching circuit disposed between a drain of the transistor and the load.
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公开(公告)号：US10236824B2
公开(公告)日：2019-03-19
申请号：US15297580
申请日：2016-10-19
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Jun-De Jin , Ying-Ta Lu , Hsien-Yuan Liao
Abstract: A voltage controlled oscillator (“VCO”) circuit is disclosed. The VCO includes a switch module comprising a first transistor and a second transistor; a first LC-tank module, the first LC-tank module is operatively connected between the drain of the first transistor and the drain of the second transistor; and a second LC-tank module, the second LC-tank module is operatively connected between the gate of the first transistor and the gate of the second transistor, the source of the first transistor and the source of the second transistor are operatively connected.
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公开(公告)号：US09318487B2
公开(公告)日：2016-04-19
申请号：US13937542
申请日：2013-07-09
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Jun-De Jin , Tzu-Jin Yeh , Chewn-Pu Jou
IPC: H01L27/088 , H03F1/22 , H01L21/8238 , H01L27/095 , H03F3/213 , H01L27/092
CPC classification number: H01L27/0883 , H01L21/8236 , H01L21/8238 , H01L21/823821 , H01L21/823828 , H01L21/823885 , H01L27/092 , H01L27/0922 , H01L27/095 , H01L29/0649 , H01L29/66666 , H01L29/66848 , H01L29/7827 , H01L29/812 , H03F1/223 , H03F3/213
Abstract: A power cell designed for an RF power amplifier comprises an enhancement MOSFET formed in an P-Well in an P-Substrate and a depletion or Schottky MOSFET formed in an N-Well in the same P-Substrate with a horizontal or a vertical channel between the source, drain, and gate electrodes of the depletion or Schottky MOSFET. The source node of the enhancement MOSFET and source node of the depletion or Schottky MOSFET are connected together to form the power cell.
Abstract translation: 为RF功率放大器设计的功率单元包括形成在P基板中的P阱中的增强型MOSFET和形成在相同P-基板中的N阱中的耗尽或肖特基MOSFET，其中水平或垂直通道介于 耗尽或肖特基MOSFET的源极，漏极和栅电极。 增强MOSFET的源节点和耗尽型或肖特基MOSFET的源极节点连接在一起形成功率单元。
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Patent Agency Ranking
公开(公告)号：US12142585B2
公开(公告)日：2024-11-12
申请号：US18387801
申请日：2023-11-07
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Jun-De Jin
IPC: H01L23/66 , H01L23/528 , H01L27/088 , H01L29/06 , H01L29/417
Abstract: Devices and methods for enhancing insertion loss performance of an antenna switch are disclosed. In one example, a semiconductor device formed to serve as an antenna switch is disclosed. The semiconductor device includes: a substrate, a dielectric layer and a polysilicon region. The substrate includes: an intrinsic substrate; a metal-oxide-semiconductor device extending into the intrinsic substrate; and at least one isolation feature extending into and in contact with the intrinsic substrate. The at least one isolation feature is disposed adjacent to the metal-oxide-semiconductor device.
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公开(公告)号：US11380680B2
公开(公告)日：2022-07-05
申请号：US16874536
申请日：2020-05-14
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Jun-De Jin , Tzu-Jin Yeh
IPC: H01L27/06 , H01L29/423 , H01L29/06
Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, first and second wells of a first conductivity type, a third well of a second conductivity type, different from the first conductivity type, a first doped region of the first conductivity type in the second well, a metal-oxide-semiconductor device, and a feature. The metal-oxide-semiconductor device is at least partially disposed within the substrate and includes a gate structure disposed above the first well. The gate structure, the first doped region, or the combination thereof is configured to be floated. The feature is disposed adjacent to the metal-oxide-semiconductor device. The feature extends into the substrate with a first depth and a portion of the metal-oxide-semiconductor device extends into the substrate with a second depth smaller than the first depth.
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公开(公告)号：US10050590B2
公开(公告)日：2018-08-14
申请号：US15204734
申请日：2016-07-07
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Jun-De Jin
Abstract: A power amplifier (PA) cell is coupled to an input signal source, and includes a transistor coupled to the load; a first inductor coupled to a gate of the transistor; and a second inductor coupled to a source of the transistor, wherein the first inductor and the second inductor each includes a first conductive coil and a second conductive coil, respectively, having first and second inductance values, respectively, such that the PA cell includes a terminal between the gate of the transistor and the input signal source, and the terminal is impedance matched with the input signal source.
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公开(公告)号：US09991721B2
公开(公告)日：2018-06-05
申请号：US14918615
申请日：2015-10-21
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Jun-De Jin , Fan-Ming Kuo , Huan-Neng Chen , Ming-Hsien Tsai , Hsieh-Hung Hsieh , Tzu-Jin Yeh
CPC classification number: H02J5/005 , H01F5/00 , H01F17/0006 , H01F38/14 , H01F2017/0086 , H02J17/00 , H02J50/12
Abstract: A transformer includes first and second semiconductor substrates. The first semiconductor substrate includes a first circuit, a first coil providing a first impedance, and a first capacitor coupled in parallel with the first coil. The second semiconductor substrate includes a second circuit, a second coil providing a second impedance and inductively coupled with the first coil, and a second capacitor coupled in parallel with the second coil.
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公开(公告)号：US09412721B2
公开(公告)日：2016-08-09
申请号：US14280732
申请日：2014-05-19
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Ping-Lin Yang , Jun-De Jin , Fu-Lung Hsueh , Sa-Lly Liu , Tong-Chern Ong , Chun-Jung Lin , Ya-Chen Kao
IPC: H01F5/00 , H01L25/065 , H01F27/28 , H01F41/04 , H01L23/522 , H01L23/48
CPC classification number: H01L25/0657 , H01F5/00 , H01F27/2804 , H01F41/046 , H01F2027/2809 , H01L23/48 , H01L23/5227 , H01L2225/06531 , H01L2924/0002 , Y10T29/4902 , H01L2924/00
Abstract: A communications structure comprises a first semiconductor substrate having a first coil, and a second semiconductor substrate having a second coil above the first semiconductor substrate. Inner edges of the first and second coils define a boundary of a volume that extends below the first coil and above the second coil. A ferromagnetic core is positioned at least partially within the boundary, such that a mutual inductance is provided between the first and second coils for wireless transmission of signals or power between the first and second coils.
Abstract translation: 通信结构包括具有第一线圈的第一半导体衬底和在第一半导体衬底上方具有第二线圈的第二半导体衬底。 第一和第二线圈的内边缘限定在第一线圈下方延伸并在第二线圈之上的体积的边界。 铁磁芯至少部分地位于边界内，使得在第一和第二线圈之间提供互感以在第一和第二线圈之间无线地传输信号或电力。
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