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    EXTREME ULTRAVIOLET MASK WITH ALLOY BASED ABSORBERS
    11.
    发明公开
    EXTREME ULTRAVIOLET MASK WITH ALLOY BASED ABSORBERS 审中-公开

    公开(公告)号：US20230375921A1

    公开(公告)日：2023-11-23

    申请号：US18365749

    申请日：2023-08-04

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Pei-Cheng HSU ,  Ping-Hsun LIN ,  Ta-Cheng LIEN ,  Hsin-Chang LEE

    IPC: G03F7/004 ,  H01L21/033

    CPC classification number: G03F7/0042 ,  H01L21/0332 ,  H01L21/0337

    Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a multi-layer patterned absorber layer on the reflective multilayer stack is provided. Disclosed embodiments include an absorber layer that includes an alloy comprising ruthenium (Ru), chromium (Cr), platinum (Pt), gold (Au), iridium (Ir), titanium (Ti), niobium (Nb), rhodium (Rh), molybdenum (Mo), tungsten (W) or palladium (Pd), and at least one alloying element. The at least one alloying element includes ruthenium (Ru), chromium (Cr), tantalum (Ta), platinum (Pt), gold (Au), iridium (Ir), titanium (Ti), niobium (Nb), rhodium (Rh), molybdenum (Mo), hafnium (Hf), boron (B), nitrogen (N), silicon (Si), zirconium (Zr) or vanadium (V). Other embodiments include a multi-layer patterned absorber structure with layers that include an alloy and an alloying element, where at least two of the layers of the multi-layer structure have different compositions.

    OPTICAL ASSEMBLY WITH COATING AND METHODS OF USE
    12.
    发明公开
    OPTICAL ASSEMBLY WITH COATING AND METHODS OF USE 审中-公开

    公开(公告)号：US20230161261A1

    公开(公告)日：2023-05-25

    申请号：US17745576

    申请日：2022-05-16

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Wei-Hao LEE ,  Pei-Cheng HSU ,  Huan-Ling LEE ,  Ta-Cheng LIEN ,  Hsin-Chang LEE ,  Chin-Hsiang LIN

    IPC: G03F7/20

    CPC classification number: G03F7/70033

    Abstract: Coated nanotubes and bundles of nanotubes are formed into membranes useful in optical assemblies in EUV photolithography systems. These optical assemblies are useful in methods for patterning materials on a semiconductor substrate. Such methods involve generating, in a UV lithography system, UV radiation. The UV radiation is passed through a coating layer of the optical assembly, e.g., a pellicle assembly. The UV radiation that has passed through the coating layer is passed through a matrix of individual nanotubes or matrix of nanotube bundles. UV radiation that passes through the matrix of individual nanotubes or matrix of nanotube bundles is reflected from a mask and received at a semiconductor substrate.

    EXTREME ULTRAVIOLET MASK WITH CAPPING LAYER
    13.
    发明申请
    EXTREME ULTRAVIOLET MASK WITH CAPPING LAYER 有权

    公开(公告)号：US20230116213A1

    公开(公告)日：2023-04-13

    申请号：US17745562

    申请日：2022-05-16

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Wei-Hao LEE ,  Pei-Cheng HSU ,  Hsin-Chang LEE

    IPC: G03F1/24 ,  H01L21/033 ,  G03F7/20

    Abstract: An extreme ultraviolet (EUV) mask, includes a substrate, a reflective multilayer stack on the substrate, and a multi-layer capping feature on the reflective multilayer stack. The multi-layer capping feature includes a first capping layer including a material containing an element having a first carbon solubility and a second capping layer including a material containing an element having a second carbon solubility. The first carbon solubility being different from the second carbon solubility. In some embodiments an element of the material of the first capping layer and an element of the second capping layer have extinction coefficients for EUV having a wavelength of 13.5 nm that are different.

    EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF
    18.
    发明申请
    EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF 有权

    公开(公告)号：US20210405519A1

    公开(公告)日：2021-12-30

    申请号：US17090825

    申请日：2020-11-05

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Hsin-Chang LEE ,  Chia-Jen CHEN ,  Pei-Cheng HSU ,  Ta-Cheng LIEN

    IPC: G03F1/24 ,  G03F1/54 ,  H01L21/033 ,  H01L21/027

    Abstract: In a method of manufacturing a reflective mask, a photo resist layer is formed over a mask blank. The mask blank includes a substrate, a reflective multilayer on the substrate, a capping layer on the reflective multilayer, an absorber layer on the capping layer and a hard mask layer, and the absorber layer is made of Cr, CrO or CrON. The photo resist layer is patterned, the hard mask layer is patterned by using the patterned photo resist layer, the absorber layer is patterned by using the patterned hard mask layer, and an additional element is introduced into the patterned absorber layer to form a converted absorber layer.

    EUV MASKS TO PREVENT CARBON CONTAMINATION
    20.
    发明申请
    EUV MASKS TO PREVENT CARBON CONTAMINATION 有权

    公开(公告)号：US20210223678A1

    公开(公告)日：2021-07-22

    申请号：US16746640

    申请日：2020-01-17

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Pei-Cheng HSU ,  Ta-Cheng LIEN ,  Hsin-Chang LEE

    IPC: G03F1/22

    Abstract: An extreme ultra-violet (EUV) mask and method for fabricating the same is disclosed. For example, the EUV mask includes a substrate, a multi-layered mirror layer formed on the substrate, a metal capping layer formed on the multi-layered mirror layer, and a multi-layered absorber layer formed on the metal capping layer. The multi-layered absorber layer includes features etched into the multi-layered absorber layer to define structures on a semiconductor device.

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