公开(公告)号：US11164855B2

公开(公告)日：2021-11-02

申请号：US16572619

申请日：2019-09-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Weiming Chris Chen ,  Chi-Hsi Wu ,  Chih-Wei Wu ,  Kuo-Chiang Ting ,  Szu-Wei Lu ,  Shang-Yun Hou ,  Ying-Ching Shih ,  Hsien-Ju Tsou ,  Cheng-Chieh Li

IPC: H01L23/32 ,  H01L25/18 ,  H01L25/00 ,  H01L23/00 ,  H01L21/82 ,  H01L23/48 ,  H01L21/56 ,  H01L23/367

Abstract: A package structure includes a circuit element, a first semiconductor die, a second semiconductor die, a heat dissipating element, and an insulating encapsulation. The first semiconductor die and the second semiconductor die are located on the circuit element. The heat dissipating element connects to the first semiconductor die, and the first semiconductor die is between the circuit element and the heat dissipating element, where a sum of a first thickness of the first semiconductor die and a third thickness of the heat dissipating element is substantially equal to a second thickness of the second semiconductor die. The insulating encapsulation encapsulates the first semiconductor die, the second semiconductor die and the heat dissipating element, wherein a surface of the heat dissipating element is substantially leveled with the insulating encapsulation.

公开(公告)号：US20210035884A1

公开(公告)日：2021-02-04

申请号：US16524172

申请日：2019-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ting-Yu Yeh ,  Cing-He Chen ,  Kuo-Chiang Ting ,  Weiming Chris Chen ,  Chia-Hao Hsu

IPC: H01L23/373 ,  H01L21/56 ,  H01L23/31 ,  H01L23/367 ,  H01L23/00

Abstract: A semiconductor package includes a redistribution structure, at least one semiconductor device and a plurality of heat dissipation films. The at least one semiconductor device is mounted on the redistribution structure. The plurality of heat dissipation films are disposed on the at least one semiconductor device in a side by side manner and jointly cover an upper surface of the at least one semiconductor device. A manufacturing method of the semiconductor package is also provided.

公开(公告)号：US12148719B2

公开(公告)日：2024-11-19

申请号：US17869296

申请日：2022-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen Hsin Wei ,  Hsien-Pin Hu ,  Shang-Yun Hou ,  Weiming Chris Chen

IPC: H01L23/00 ,  H01L21/768 ,  H01L23/58 ,  H01L23/31 ,  H01L23/532 ,  H01L25/00 ,  H01L25/065

Abstract: A method includes performing a first light-exposure and a second a second light-exposure on a photo resist. The first light-exposure is performed using a first lithograph mask, which covers a first portion of the photo resist. The first portion of the photo resist has a first strip portion exposed in the first light-exposure. The second light-exposure is performed using a second lithograph mask, which covers a second portion of the photo resist. The second portion of the photo resist has a second strip portion exposed in the second light-exposure. The first strip portion and the second strip portion have an overlapping portion that is double exposed. The method further includes developing the photo resist to remove the first strip portion and the second strip portion, etching a dielectric layer underlying the photo resist to form a trench, and filling the trench with a conductive feature.

公开(公告)号：US20240312898A1

公开(公告)日：2024-09-19

申请号：US18672546

申请日：2024-05-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Weiming Chris Chen ,  Kuo-Chiang Ting ,  Shang-Yun Hou

IPC: H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/538

CPC classification number: H01L23/49861 ,  H01L21/486 ,  H01L21/56 ,  H01L23/3121 ,  H01L23/5384

Abstract: A method of forming a semiconductor structure includes bonding a first die and a second die to a first side of a first interposer and to a first side of a second interposer, respectively, where the first interposer is laterally adjacent to the second interposer; encapsulating the first interposer and the second interposer with a first molding material; forming a first recess in a second side of the first interposer opposing the first side of the first interposer; forming a second recess in a second side of the second interposer opposing the first side of the second interposer; and filling the first recess and the second recess with a first dielectric material.

公开(公告)号：US11728238B2

公开(公告)日：2023-08-15

申请号：US16524172

申请日：2019-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ting-Yu Yeh ,  Cing-He Chen ,  Kuo-Chiang Ting ,  Weiming Chris Chen ,  Chia-Hao Hsu

IPC: H01L23/373 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00 ,  H01L23/367

CPC classification number: H01L23/3735 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/367 ,  H01L24/09 ,  H01L2224/02372 ,  H01L2924/3511

Abstract: A semiconductor package includes a redistribution structure, at least one semiconductor device and a plurality of heat dissipation films. The at least one semiconductor device is mounted on the redistribution structure. The plurality of heat dissipation films are disposed on the at least one semiconductor device in a side by side manner and jointly cover an upper surface of the at least one semiconductor device. A manufacturing method of the semiconductor package is also provided.

公开(公告)号：US20220328395A1

公开(公告)日：2022-10-13

申请号：US17852961

申请日：2022-06-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Weiming Chris Chen ,  Kuo-Chiang Ting ,  Shang-Yun Hou

IPC: H01L23/498 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56 ,  H01L23/538

Abstract: A method of forming a semiconductor structure includes bonding a first die and a second die to a first side of a first interposer and to a first side of a second interposer, respectively, where the first interposer is laterally adjacent to the second interposer; encapsulating the first interposer and the second interposer with a first molding material; forming a first recess in a second side of the first interposer opposing the first side of the first interposer; forming a second recess in a second side of the second interposer opposing the first side of the second interposer; and filling the first recess and the second recess with a first dielectric material.

公开(公告)号：US20210305146A1

公开(公告)日：2021-09-30

申请号：US16919298

申请日：2020-07-02

Applicant: Taiwan Semiconductor Manufacturing Co.,Ltd.

Inventor： Weiming Chris Chen ,  Kuo-Chiang Ting ,  Shang-Yun Hou

IPC: H01L23/498 ,  H01L23/31 ,  H01L23/538 ,  H01L21/56 ,  H01L21/48

Abstract: A method of forming a semiconductor structure includes bonding a first die and a second die to a first side of a first interposer and to a first side of a second interposer, respectively, where the first interposer is laterally adjacent to the second interposer; encapsulating the first interposer and the second interposer with a first molding material; forming a first recess in a second side of the first interposer opposing the first side of the first interposer; forming a second recess in a second side of the second interposer opposing the first side of the second interposer; and filling the first recess and the second recess with a first dielectric material.