公开(公告)号：US07354741B2

公开(公告)日：2008-04-08

申请号：US11599371

申请日：2006-11-15

申请人： Kazuyuki Sugahara ,  Hiroshi Kitagawa

发明人： Kazuyuki Sugahara ,  Hiroshi Kitagawa

IPC分类号： C12P19/26 ,  C12P21/06 ,  C12Q1/00 ,  C12Q1/68 ,  C12N15/70 ,  C07H21/04

CPC分类号： C12N9/1051 ,  C12P19/26

摘要： A vector of the present invention has DNA encoding a protein or a product having the same effect as the protein, the protein containing an amino acid sequence from amino acid numbers 47 to 802 in SEQ. ID. NO:2. Expression of the DNA gives human chondroitin synthase. By using human chondroitin synthase, it is possible to produce a saccharide chain having a repeating disaccharide unit of chondroitin. The DNA or part thereof may be used as a probe for hybridization for the human chondroitin synthase.

摘要翻译： 本发明的载体具有编码蛋白质或具有与蛋白质相同效果的产物的DNA，该蛋白质含有SEQ ID NO：47至802的氨基酸序列。 ID。 NO：2。 DNA的表达给人软骨素合成酶。 通过使用人软骨素合成酶，可以生成具有软骨素重复二糖单元的糖链。 DNA或其部分可以用作人类软骨素合酶杂交的探针。

公开(公告)号：US20080038270A1

公开(公告)日：2008-02-14

申请号：US11628432

申请日：2005-06-01

申请人： Prachya Kongtawelert ,  Tim Hardingham ,  Siriwan Ong-Chai ,  Kazuyuki Sugahara ,  Peraphan Pothacharoen ,  Nattachai Tiengburanathum

发明人： Prachya Kongtawelert ,  Tim Hardingham ,  Siriwan Ong-Chai ,  Kazuyuki Sugahara ,  Peraphan Pothacharoen ,  Nattachai Tiengburanathum

IPC分类号： A61K39/395 ,  A61P43/00 ,  C07K16/00 ,  C12N5/00 ,  C12P21/00 ,  C12Q1/00 ,  G01N33/577

CPC分类号： C07K16/18 ,  G01N33/57407 ,  G01N33/6887 ,  G01N2400/40 ,  G01N2800/10 ,  G01N2800/102

摘要： An antibody specific for a chondroitin sulphate epitope is described, as is a hybridoma cell line which produces such an antibody. The antibody is useful in the diagnosis and treatment of connective tissue diseases, such as arthritis and sarcomas. Test kits and pharmaceutical compositions are also described.

摘要翻译： 描述了对硫酸软骨素表位具有特异性的抗体，以及产生这种抗体的杂交瘤细胞系也是如此。 该抗体可用于结缔组织疾病如关节炎和肉瘤的诊断和治疗。 还描述了测试试剂盒和药物组合物。

公开(公告)号：US07262433B2

公开(公告)日：2007-08-28

申请号：US11137660

申请日：2005-05-26

申请人： Kazuyuki Sugahara ,  Naoki Nakagawa ,  Yoshihiko Toyoda ,  Takao Sakamoto

发明人： Kazuyuki Sugahara ,  Naoki Nakagawa ,  Yoshihiko Toyoda ,  Takao Sakamoto

IPC分类号： H01L27/12

CPC分类号： H01L27/1222 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/78621 ,  H01L29/78627

摘要： A first thin film transistor including a gate electrode, a source region, a drain region, a GOLD region, and a channel region is formed at a first region at a TFT array substrate. A second thin film transistor including a gate electrode, a source region, drain region, a GOLD region, and a channel region is formed at a second region. The GOLD length (0.5 μm) of the GOLD region of the second thin film transistor is set shorter than the GOLD length (1.5 μm) of the GOLD region of the first thin film transistor. Accordingly, a semiconductor device directed to reducing the area occupied by semiconductor elements is obtained.

摘要翻译： 在TFT阵列基板的第一区域形成包括栅极，源极区，漏极区，GOLD区和沟道区的第一薄膜晶体管。 在第二区域形成包括栅电极，源极区，漏极区，GOLD区和沟道区的第二薄膜晶体管。 第二薄膜晶体管的GOLD区域的GOLD长度（0.5μm）被设定为比第一薄膜晶体管的GOLD区域的GOLD长度（1.5μm）短。 因此，获得了旨在减小半导体元件所占的面积的半导体器件。

公开(公告)号：US20070087535A1

公开(公告)日：2007-04-19

申请号：US11565429

申请日：2006-11-30

申请人： Yoshihiko Toyoda ,  Takao Sakamoto ,  Kazuyuki Sugahara

发明人： Yoshihiko Toyoda ,  Takao Sakamoto ,  Kazuyuki Sugahara

IPC分类号： H01L21/28 ,  H01L21/44

CPC分类号： H01L27/1222 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/66757 ,  H01L29/78624 ,  H01L2029/7863

摘要： A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor T including a source region, a drain region, a channel region having a predetermined channel length, a first GOLD region having an impurity concentration lower than the impurity concentration of the source region, a second GOLD region having an impurity concentration lower than the impurity concentration of the drain region, a gate insulation film, and a gate electrode. The length of an overlapping portion in plane between the gate electrode and the second GOLD region in the direction of the channel length is set longer than the length in the direction of the channel region of an overlapping portion in plane between the gate electrode and the first GOLD region.

摘要翻译： 在玻璃基板上形成氮化硅膜和氧化硅膜。 在氧化硅膜上形成薄膜晶体管T，该薄膜晶体管T包括源极区，漏极区，具有预定沟道长度的沟道区，具有低于源区杂质浓度的杂质浓度的第一GOLD区， GOLD区域的杂质浓度低于漏极区域的杂质浓度，栅极绝缘膜和栅电极。 在沟道长度方向上的栅电极和第二GOLD区之间的平面重叠部分的长度被设定为长于栅电极和第一栅极之间的平面重叠部分的沟道区域的方向上的长度 金地区。

公开(公告)号：US4801548A

公开(公告)日：1989-01-31

申请号：US123141

申请日：1987-11-20

申请人： Tetsuya Takakura ,  Kenzi Asano ,  Kazuyuki Sugahara

发明人： Tetsuya Takakura ,  Kenzi Asano ,  Kazuyuki Sugahara

IPC分类号： C12M3/00 ,  C12M1/22 ,  C12Q1/04 ,  C12M1/20

CPC分类号： C12M23/10

摘要： A Petri dish for cultivating bacteria used for isolating the bacteria in an enrichment culture for performing drug susceptibility tests, etc. having a mouth covered with at least one sheet and at least one small opening provided on the bottom of the Petri dish, partitions having a height equal to the distance between the bottom of the Petri dish and the sheet may be provided in the Petri dish, and a sealing lid may be fitted over the small openings. A method of inspecting drug susceptibility of bacteria which are isolated from clinical specimens etc. or purely cultured after their isolation using the Petri dish. The method using the fractionized Petri dish having a pervious sheet as the cultivation surface assorts different kinds of media from each other, the media being different in the kind of drug contained in each media or media containing the same drug but in different concentrations in each section of the Petri dish into which the bacteria is inoculated.

公开(公告)号：US4775628A

公开(公告)日：1988-10-04

申请号：US774757

申请日：1985-09-11

申请人： Tetsuya Takakura ,  Kenzi Asano ,  Kazuyuki Sugahara

发明人： Tetsuya Takakura ,  Kenzi Asano ,  Kazuyuki Sugahara

IPC分类号： C12M3/00 ,  C12M1/22 ,  C12Q1/04

CPC分类号： C12M23/10

摘要： A Petri dish for cultivating bacteria used for isolating the bacteria in an enrichment culture for performing drug susceptibility tests, etc. having a mouth covered with at least one sheet and at least one small opening provided on the bottom of the Petri dish, partitions having a height equal to the distance between the bottom of the Petri dish and the sheet may be provided in the Petri dish, and a sealing lid may be fitted over the small openings. A method of inspecting drug susceptibility of bacteria which are isolated from clinical specimens etc. or purely cultured after their isolation using the Petri dish. The method using the fractionized Petri dish having a pervious sheet as the cultivation surface assorts different kinds of media from each other, the media being different in the kind of drug contained in each media or media containing the same drug but in different concentrations in each section of the Petri dish into which the bacteria is inoculated.

摘要翻译： 一种用于培养细菌的培养皿，用于在富集培养物中分离细菌以进行药物敏感性试验等，其具有覆盖有至少一片的口和设置在培养皿底部的至少一个小开口，具有 可以在培养皿中设置等于培养皿的底部和片材之间的距离的高度，并且可以在小开口上安装密封盖。 检查临床标本中分离的细菌的药物敏感性的方法，或使用培养皿分离后纯化培养的细菌的方法。 使用具有透视片作为培养表面的分级培养皿的方法将不同种类的培养基彼此分配，所述培养基在每个培养基中含有的药物种类不同，每个培养基或含有相同药物的培养基在每个部分中具有不同的浓度 的培养皿中接种细菌。

公开(公告)号：US20100112790A1

公开(公告)日：2010-05-06

申请号：US12596453

申请日：2007-12-05

申请人： Kazuyuki Sugahara ,  Naoki Nakagawa ,  Shinsuke Yura ,  Toru Takeguchi ,  Tomoyuki Irizumi ,  Kazushi Yamayoshi ,  Atsuhiro Sono

发明人： Kazuyuki Sugahara ,  Naoki Nakagawa ,  Shinsuke Yura ,  Toru Takeguchi ,  Tomoyuki Irizumi ,  Kazushi Yamayoshi ,  Atsuhiro Sono

IPC分类号： H01L21/20 ,  H01L21/268

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/0657

摘要： On a translucent substrate, an insulating film having a refractive index n and an amorphous silicon film are deposited successively. By irradiating the amorphous silicon film with a laser beam having a beam shape of a band shape extending along a length direction with a wavelength λ, a plurality of times from a side of amorphous silicon film facing the insulating film, while an irradiation position of the laser beam is shifted each of the plurality of times in a width direction of the band shape by a distance smaller than a width dimension of the band shape, a polycrystalline silicon film is formed from the amorphous silicon film. Forming the polycrystalline silicon film forms crystal grain boundaries which extend in the width direction and are disposed at a mean spacing measured along the length direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive, and crystal grain boundaries which, in a region between crystal grain boundaries adjacent to each other and extending in the width direction, extend in the length direction and are disposed at a mean spacing measured along the width direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive.

摘要翻译： 在半透明基板上，依次沉积具有折射率n的绝缘膜和非晶硅膜。 通过从具有波长λ方向的波长形状的波束形状的激光束照射非晶硅膜，从非晶硅膜的与绝缘膜相对的侧面多次， 激光束在带状的宽度方向上多次移动距离小于带状的宽度尺寸的距离，由非晶硅膜形成多晶硅膜。 形成多晶硅膜形成在宽度方向上延伸的晶粒边界，并且以沿长度方向测量的平均间隔设置，范围为（λ/ n）×0.95〜（λ/ n）×1.05， 在彼此相邻并且在宽度方向上延伸的晶粒边界之间的区域中，在长度方向上延伸并沿宽度方向测量的平均间隔设置在（λ/ n）×0.95〜（ λ/ n）×1.05（含）。

公开(公告)号：US07642605B2

公开(公告)日：2010-01-05

申请号：US11054384

申请日：2005-02-10

申请人： Toru Takeguchi ,  Kazuyuki Sugahara

发明人： Toru Takeguchi ,  Kazuyuki Sugahara

IPC分类号： H01L23/62

CPC分类号： H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675

摘要： A semiconductor device includes a glass substrate having a main surface, a polysilicon film formed on the main surface, having a channel region formed and having a source region and a drain region formed on opposing sides of the channel region, a gate insulating film provided so as to be in contact with the polysilicon film and containing oxygen, and a gate electrode provided in a position facing the channel region with the gate insulating film being interposed. The polysilicon film has a thickness larger than 50 nm and not larger than 150 nm. The polysilicon film contains hydrogen in a proportion not smaller than 0.5 atomic percent and not larger than 10 atomic percent. With such a structure, a semiconductor device attaining a large drain current and having a desired electric characteristic is provided.

摘要翻译： 半导体器件包括具有主表面的玻璃衬底，形成在主表面上的多晶硅膜，具有形成的沟道区，并且具有形成在沟道区的相对侧上的源极区和漏极区，栅极绝缘膜设置为 与多晶硅膜接触并含有氧，以及设置在与栅极绝缘膜相对的沟道区的位置的栅电极。 多晶硅膜的厚度大于50nm且不大于150nm。 多晶硅膜含有不小于0.5原子％且不大于10原子％的比例的氢。 通过这样的结构，提供了获得大的漏极电流并具有期望的电特性的半导体器件。

公开(公告)号：US20090291470A1

公开(公告)日：2009-11-26

申请号：US12010856

申请日：2008-01-30

申请人： Kazuyuki Sugahara ,  Hiroshi Kitagawa

发明人： Kazuyuki Sugahara ,  Hiroshi Kitagawa

IPC分类号： C12P21/02 ,  C12P19/18 ,  C12N5/10 ,  C12N15/63 ,  C07H21/04

CPC分类号： C12N9/1051 ,  C12P19/26

摘要： A vector of the present invention has DNA encoding a protein or a product having the same effect as the protein, the protein containing an amino acid sequence from amino acid numbers 47 to 802 in SEQ. ID. NO:2. Expression of the DNA gives human chondroitin synthase. By using human chondroitin synthase, it is possible to produce a saccharide chain having a repeating disaccharide unit of chondroitin. The DNA or part thereof may be used as a probe for hybridization for the human chondroitin synthase.

摘要翻译： 本发明的载体具有编码蛋白质或具有与蛋白质相同效果的产物的DNA，该蛋白质含有SEQ ID NO：47至802的氨基酸序列。 ID。 NO：2。 DNA的表达给人软骨素合成酶。 通过使用人软骨素合成酶，可以生成具有软骨素重复二糖单元的糖链。 DNA或其部分可以用作人类软骨素合酶杂交的探针。

公开(公告)号：US07176491B2

公开(公告)日：2007-02-13

申请号：US11091570

申请日：2005-03-29

申请人： Yoshihiko Toyoda ,  Takao Sakamoto ,  Kazuyuki Sugahara

发明人： Yoshihiko Toyoda ,  Takao Sakamoto ,  Kazuyuki Sugahara

IPC分类号： H01L29/04

CPC分类号： H01L27/1222 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/66757 ,  H01L29/78624 ,  H01L2029/7863

摘要： A silicon nitride film and a silicon oxide film are formed on a glass substrate. On the silicon oxide film is formed a thin film transistor T including a source region, a drain region, a channel region having a predetermined channel length, a first GOLD region having an impurity concentration lower than the impurity concentration of the source region, a second GOLD region having an impurity concentration lower than the impurity concentration of the drain region, a gate insulation film, and a gate electrode. The length of an overlapping portion in plane between the gate electrode and the second GOLD region in the direction of the channel length is set longer than the length in the direction of the channel region of an overlapping portion in plane between the gate electrode and the first GOLD region.

摘要翻译： 在玻璃基板上形成氮化硅膜和氧化硅膜。 在氧化硅膜上形成薄膜晶体管T，该薄膜晶体管T包括源极区，漏极区，具有预定沟道长度的沟道区，具有低于源区杂质浓度的杂质浓度的第一GOLD区， GOLD区域的杂质浓度低于漏极区域的杂质浓度，栅极绝缘膜和栅电极。 在沟道长度方向上的栅电极和第二GOLD区之间的平面重叠部分的长度被设定为长于栅电极和第一栅极之间的平面重叠部分的沟道区域的方向上的长度 金地区。