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公开(公告)号：US4560278A
公开(公告)日：1985-12-24
申请号：US513452
申请日：1983-07-13
申请人： Toshiaki Shinozaki , Ichiro Mori
发明人： Toshiaki Shinozaki , Ichiro Mori
摘要： A fixed-slit type photoelectric microscope comprises an irradiation system for irradiating a linear pattern with light beam, an objective for forming an image of the linear pattern, a single slit disposed at a point conjugate to the linear pattern with respect to the objective, a photoelectric conversion element for converting the light beam from the slit into an electrical signal, a rectifying circuit for rectifying an electrical signal from the photoelectric conversion element, and an indicator for visualizing the rectified signal. The irradiation system generates a pair of polarized light beams with planes of polarization orthogonal to each other and alternately illuminates the linear pattern with the pair of polarized light beams at fixed periods. For deflecting the pair of polarized light beams from the linear pattern in different directions, an optical deflecting element is provided between the linear pattern and the slit. Different portions of the slit are illuminated by the pair of polarized light beams deflected by the optical deflecting elements.
摘要翻译： 固定狭缝型光电显微镜包括用于用光束照射线性图案的照射系统，用于形成线状图案的图像的目标，设置在与该物镜相对应的线状图案的点处的单个狭缝， 用于将来自狭缝的光束转换成电信号的光电转换元件，用于对来自光电转换元件的电信号进行整流的整流电路和用于可视化整流信号的指示器。 照射系统产生一对具有彼此正交的偏振平面的偏振光束，并且以固定的周期以一对偏振光束交替地照射线状图案。 为了沿着不同的方向偏转来自线状图案的一对偏振光束，在线状图案和狭缝之间设置有光学偏转元件。 狭缝的不同部分由被光学偏转元件偏转的一对偏振光束照射。
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公开(公告)号：US20100247475A1
公开(公告)日：2010-09-30
申请号：US12679244
申请日：2008-09-19
申请人： Ichiro Mori , Shunichi Akiba
发明人： Ichiro Mori , Shunichi Akiba
IPC分类号： A61L9/01 , C07C49/29 , C07C49/303 , C07C49/297 , C07D313/00 , C07D321/00 , C07C69/00 , C07C33/025 , C07C33/02 , C07C43/02 , C07C13/16
CPC分类号： C12N9/99 , A61K8/35 , A61K8/4973 , A61K2800/782 , A61Q15/00
摘要： Provided are a novel β-glucuronidase inhibitor including a compound selected from a macrocyclic ketone, a ketone, a macrocyclic lactone, a macrocyclic oxalactone, an ester, an aldehyde, an alcohol, and a terpene of specific kinds, and an environmental hygiene product and a sanitary product each containing the β-glucuronidase inhibitor. Also provided are a composition for suppressing the generation of urine odor and a method of suppressing the generation of urine odor each using a β-glucuronidase inhibitor.
摘要翻译： 本发明提供了一种新颖的 - 葡糖醛酸糖苷酶抑制剂，其包括选自大环酮，酮，大环内酯，大环草内酯，酯，醛，醇和特定种类的萜烯的化合物，以及环境卫生产品 和每个含有葡萄糖醛酸糖苷酶抑制剂的卫生产品。 还提供了抑制尿臭味的产生的组合物，以及使用葡萄糖醛酸糖苷酶抑制剂抑制尿臭的产生的方法。
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公开(公告)号：US07482455B2
公开(公告)日：2009-01-27
申请号：US10530986
申请日：2003-10-15
申请人： Joelle L. Burgess , James F. Callahan , Toshihiro Hamajima , Satoru Ida , Ichiro Mori , Jun Tang
发明人： Joelle L. Burgess , James F. Callahan , Toshihiro Hamajima , Satoru Ida , Ichiro Mori , Jun Tang
IPC分类号： C07D215/38
CPC分类号： C07D401/12 , C07D215/54 , C07D405/12
摘要： 3-carboxy quinoline derivatives, which are useful as YAK3 inhibitors are described herein. The described invention also includes methods of making such 3-carboxy quinoline derivatives as well as methods of using the same in the treatment of diseases mediated by inappropriate YAK3 activity.
摘要翻译： 本文描述了可用作YAK3抑制剂的3-羧基喹啉衍生物。 所述的发明还包括制备这种3-羧基喹啉衍生物的方法以及用于治疗由不适当的YAK3活性介导的疾病的方法。
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14.发明授权Method of setting process parameter and method of setting process parameter and/or design rule 有权设置过程参数的方法和设置过程参数和/或设计规则的方法公开(公告)号：US07120882B2
公开(公告)日：2006-10-10
申请号：US11105431
申请日：2005-04-14
申请人： Toshiya Kotani , Satoshi Tanaka , Koji Hashimoto , Soichi Inoue , Ichiro Mori
发明人： Toshiya Kotani , Satoshi Tanaka , Koji Hashimoto , Soichi Inoue , Ichiro Mori
IPC分类号： G06F17/50
CPC分类号： H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a method of setting a process parameter for use in manufacturing a semiconductor integrated circuit, comprising correcting a first pattern by using process parameter information to obtain a second pattern, the first pattern being one which corresponds to a design layout of the semiconductor integrated circuit, predicting a third pattern by using the process parameter information, the third pattern being one which corresponds to the second pattern and which is to be formed on a semiconductor wafer in an etching process, obtaining an evaluation value by comparing the third pattern with the first pattern, determining whether the evaluation value satisfies a preset condition, and changing the process parameter information when the evaluation value is found not to satisfy the preset condition.
摘要翻译： 公开了一种设置用于制造半导体集成电路的工艺参数的方法，包括通过使用工艺参数信息来校正第一图案以获得第二图案，第一图案是对应于半导体集成电路的设计布局的图案 ，通过使用处理参数信息来预测第三图案，在蚀刻工艺中，第三图案是对应于第二图案并且将形成在半导体晶片上的图案，通过将第三图案与第一图案进行比较来获得评估值 判定评估值是否满足预设条件，以及当评估值不满足预设条件时，改变处理参数信息。
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公开(公告)号：US06991878B2
公开(公告)日：2006-01-31
申请号：US10326112
申请日：2002-12-23
申请人： Shingo Kanamitsu , Takashi Hirano , Fumiaki Shigemitsu , Motosuke Miyoshi , Kazuyoshi Sugihara , Yuichiro Yamazaki , Makoto Sekine , Takayuki Sakai , Ichiro Mori , Katsuya Okumura
发明人： Shingo Kanamitsu , Takashi Hirano , Fumiaki Shigemitsu , Motosuke Miyoshi , Kazuyoshi Sugihara , Yuichiro Yamazaki , Makoto Sekine , Takayuki Sakai , Ichiro Mori , Katsuya Okumura
CPC分类号： G03F1/74 , G03F1/84 , H01J37/3056 , H01J2237/30438 , H01J2237/31744
摘要： A photomask repair method including scanning an electron beam across a main surface of the photomask, thereby producing a pattern image of the photomask, identifying the position of a defective portion from the pattern image thus produced, and applying an electron beam to a region to be etched including a defective portion under an atmosphere of a gas capable of performing a chemical etching of a film material forming the photomask pattern, thereby removing a defect. In this method, the electron beam to be applied to the region to be etched is a shaped beam. The electron beam is set such that the side of the electron beam is applied in parallel to a borderline between a non-defective pattern and the defect.
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公开(公告)号：US5639699A
公开(公告)日：1997-06-17
申请号：US420153
申请日：1995-04-11
申请人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
发明人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
CPC分类号： G03F1/74 , B05D5/005 , C23C16/047 , G03F1/26
摘要： According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal. According to this invention, there is provided to a method of repairing a divot defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of burying a material in the divot defect and forming a projecting portion projecting from a substrate surface, covering a region including the projecting portion with flattening films consisting of a material different from that of the substrate to flatten an upper surface of the region, performing simultaneous removal of the projecting portion and the flattening films around the projecting portion using a charged particle beam, and performing removal of the flattening films left in the step of performing simultaneous removal.
摘要翻译： 根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凸点缺陷的方法，该方法具有以下步骤：在基板上形成由不同于基板的材料构成的第一薄膜 在凸起缺陷附近或接近凸块缺陷的情况下，在凸起缺陷上形成第二薄膜和使第一薄膜平坦化第二薄膜的上表面，同时去除凸起缺陷和上部的薄膜 使用带电粒子束的突出缺陷的一部分和凸起缺陷周围，并且执行在执行同时移除的步骤中留下的薄膜的去除。 根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凹陷缺陷的方法，该方法具有以下步骤：将材料埋在凹陷缺陷中并形成从基板表面突出的突出部分 使用由与基板不同的材料构成的平坦化膜覆盖包括突出部分的区域，以平坦化该区域的上表面，使用带电粒子束同时移除突出部分周围的突出部分和平坦化膜 并且执行在执行同时去除的步骤中留下的平坦化膜的去除。
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公开(公告)号：US5523576A
公开(公告)日：1996-06-04
申请号：US213041
申请日：1994-03-15
申请人： Tooru Koike , Ichiro Mori , Yuji Takigami , Kazuyoshi Sugihara , Atsushi Miyagaki , Hideo Kusakabe
发明人： Tooru Koike , Ichiro Mori , Yuji Takigami , Kazuyoshi Sugihara , Atsushi Miyagaki , Hideo Kusakabe
IPC分类号： H01J37/304 , G01N23/225
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/304 , H01J2237/3175
摘要： In a charged beam drawing apparatus for drawing a desired pattern on a sample by deflecting a charged beam on the sample while continuously moving a stage on which the sample is placed, a mark having a line-and-space pattern, in which a plurality of heavy metal marks each having a width equal to a side of the charged beam are arranged with spaces each equal to the width between them, is formed on the sample. The charged beam is radiated onto the mark while the position of the beam is fixed, and at the same time the stage is continuously moved in the longitudinal direction of the mark, thereby detecting a reflected beam from the mark. On the basis of the signal of the detected reflected beam, a relative vibration during the continuous movement of the stage is measured. This makes it possible to measure the relative vibration produced by the continuous movement of the stage, resulting in an increase in drawing accuracy.
摘要翻译： 在一种带电波束牵伸装置中，用于通过使样品上的带电波束偏转，同时连续移动放置样品的载物台，从而在样品上绘制所需图案，具有线间距图案的标记，其中多个 在样品上形成各自具有等于带电束侧的宽度的重金属标记，每个间隔均等于它们之间的宽度。 充电光束在光束的位置被固定的同时被放射到标记上，并且同时在标记的纵向方向上连续地移动平台，从而从标记检测反射光束。 基于检测到的反射光束的信号，测量在该阶段的连续运动期间的相对振动。 这使得可以测量由台的连续运动产生的相对振动，导致拉拔精度的提高。
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公开(公告)号：US5429730A
公开(公告)日：1995-07-04
申请号：US144414
申请日：1993-11-02
申请人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
发明人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
CPC分类号： G03F1/74 , B05D5/005 , C23C16/047 , G03F1/26
摘要： According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal.
摘要翻译： 根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凸点缺陷的方法，该方法具有以下步骤：在基板上形成由不同于基板的材料构成的第一薄膜 在凸起缺陷附近或接近凸块缺陷的情况下，在凸起缺陷上形成第二薄膜和使第一薄膜平坦化第二薄膜的上表面，同时去除凸起缺陷和上部的薄膜 使用带电粒子束的突出缺陷的一部分和凸起缺陷周围，并且执行在执行同时移除的步骤中留下的薄膜的去除。
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公开(公告)号：US5422205A
公开(公告)日：1995-06-06
申请号：US204438
申请日：1994-03-02
申请人： Soichi Inoue , Ichiro Mori , Tsuyoshi Shibata
发明人： Soichi Inoue , Ichiro Mori , Tsuyoshi Shibata
CPC分类号： G03F1/26 , G03F1/30 , G03F1/70 , G03F7/2022 , G03F7/70466 , G03F1/32
摘要： A method of transferring a micropattern onto a substrate includes the step of forming a multilayer film consisting of at least two layers on the substrate, the first exposing step of exposing the uppermost layer of the multilayer film through a first mask having a pattern equal to or larger than the micropattern, the step of positioning a second mask such that a main pattern thereof overlaps a transfer area of the uppermost layer of the multilayer film, the second mask having the main pattern corresponding to the micropattern and an auxiliary pattern arranged in the vicinity of the main pattern, and the second exposing step of exposing a layer other than the uppermost layer of the multilayer film through the second mask.
摘要翻译： 将微图案转移到基板上的方法包括在基板上形成由至少两层构成的多层膜的步骤，第一曝光步骤通过第一掩模曝光多层膜的最上层，该第一掩模具有等于或等于 大于微图案的步骤，将第二掩模定位成使得其主图案与多层膜的最上层的转印区域重叠的步骤，具有对应于微图案的主图案的第二掩模和布置在附近的辅助图案 以及通过第二掩模使多层膜的最上层以外的层曝光的第二曝光步骤。
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公开(公告)号：US09200269B2
公开(公告)日：2015-12-01
申请号：US12679244
申请日：2008-09-19
申请人： Ichiro Mori , Shunichi Akiba
发明人： Ichiro Mori , Shunichi Akiba
CPC分类号： C12N9/99 , A61K8/35 , A61K8/4973 , A61K2800/782 , A61Q15/00
摘要： Provided are a novel β-glucuronidase inhibitor including a compound selected from a macrocyclic ketone, a ketone, a macrocyclic lactone, a macrocyclic oxalactone, an ester, an aldehyde, an alcohol, and a terpene of specific kinds, and an environmental hygiene product and a sanitary product each containing the β-glucuronidase inhibitor. Also provided are a composition for suppressing the generation of urine odor and a method of suppressing the generation of urine odor each using a β-glucuronidase inhibitor.
摘要翻译： 本发明提供了一种新颖的 - 葡糖醛酸糖苷酶抑制剂，其包括选自大环酮，酮，大环内酯，大环草内酯，酯，醛，醇和特定种类的萜烯的化合物，以及环境卫生产品 和每个含有葡萄糖醛酸糖苷酶抑制剂的卫生产品。 还提供了抑制尿臭味的产生的组合物，以及使用葡萄糖醛酸糖苷酶抑制剂抑制尿臭的产生的方法。
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