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104 条记录 (耗时 0.048 秒)

    Focused ion beam deposition using TMCTS
    1.
    发明授权
    Focused ion beam deposition using TMCTS 失效
    使用TMCTS聚焦离子束沉积

    公开(公告)号：US5639699A

    公开(公告)日：1997-06-17

    申请号：US420153

    申请日：1995-04-11

    申请人： Hiroko Nakamura ,  Haruki Komano ,  Kazuyoshi Sugihara ,  Keiji Horioka ,  Mitsuyo Kariya ,  Soichi Inoue ,  Ichiro Mori ,  Katsuya Okumura ,  Tadahiro Takigawa ,  Toru Watanabe ,  Motosuke Miyoshi ,  Yuichiro Yamazaki ,  Haruo Okano

    发明人： Hiroko Nakamura ,  Haruki Komano ,  Kazuyoshi Sugihara ,  Keiji Horioka ,  Mitsuyo Kariya ,  Soichi Inoue ,  Ichiro Mori ,  Katsuya Okumura ,  Tadahiro Takigawa ,  Toru Watanabe ,  Motosuke Miyoshi ,  Yuichiro Yamazaki ,  Haruo Okano

    IPC分类号： B05D5/00 ,  C23C16/04 ,  G03F1/00 ,  G03F1/26 ,  G03F1/74 ,  H01L21/316

    CPC分类号： G03F1/74 ,  B05D5/005 ,  C23C16/047 ,  G03F1/26

    摘要： According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal. According to this invention, there is provided to a method of repairing a divot defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of burying a material in the divot defect and forming a projecting portion projecting from a substrate surface, covering a region including the projecting portion with flattening films consisting of a material different from that of the substrate to flatten an upper surface of the region, performing simultaneous removal of the projecting portion and the flattening films around the projecting portion using a charged particle beam, and performing removal of the flattening films left in the step of performing simultaneous removal.

    摘要翻译： 根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凸点缺陷的方法，该方法具有以下步骤：在基板上形成由不同于基板的材料构成的第一薄膜 在凸起缺陷附近或接近凸块缺陷的情况下，在凸起缺陷上形成第二薄膜和使第一薄膜平坦化第二薄膜的上表面，同时去除凸起缺陷和上部的薄膜 使用带电粒子束的突出缺陷的一部分和凸起缺陷周围，并且执行在执行同时移除的步骤中留下的薄膜的去除。 根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凹陷缺陷的方法，该方法具有以下步骤：将材料埋在凹陷缺陷中并形成从基板表面突出的突出部分 使用由与基板不同的材料构成的平坦化膜覆盖包括突出部分的区域，以平坦化该区域的上表面，使用带电粒子束同时移除突出部分周围的突出部分和平坦化膜 并且执行在执行同时去除的步骤中留下的平坦化膜的去除。

    Charged beam drawing apparatus
    4.
    发明授权
    Charged beam drawing apparatus 失效
    充电光束拉制装置

    公开(公告)号：US06495841B1

    公开(公告)日：2002-12-17

    申请号：US09299145

    申请日：1999-04-26

    申请人： Atsushi Ando ,  Shunko Magoshi ,  Kazuyoshi Sugihara ,  Yuichiro Yamazaki ,  Motosuke Miyoshi ,  Katsuya Okumura ,  Kiyoshi Hattori

    发明人： Atsushi Ando ,  Shunko Magoshi ,  Kazuyoshi Sugihara ,  Yuichiro Yamazaki ,  Motosuke Miyoshi ,  Katsuya Okumura ,  Kiyoshi Hattori

    IPC分类号： H01J37317

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/023 ,  H01J37/3174

    摘要： In an electron beam drawing apparatus including an objective lens for focusing an electron beam emitted from an electron gun on a sample surface and an objective deflector for controlling the position of the electron beam on the sample surface, an objective driving mechanism for mechanically moving the objective lens and objective deflector in a plane perpendicular to the optical axis of the electron beam is provided and an optical axis shifting deflector arranged nearer to the electron gun than the objective lens and objective deflector, for deflecting the electron beam in synchronism with the operation of the objective lens and objective deflector is provided.

    摘要翻译： 在包括用于将从电子枪发射的电子束聚焦在样品表面上的物镜和用于控制电子束在样品表面上的位置的物镜偏转器的电子束描绘装置中，用于机械地移动物镜的物镜驱动机构 提供了与电子束的光轴垂直的平面中的透镜和物镜偏转器，并且与物镜和物镜偏转器相比更靠近电子枪布置的光轴移动偏转器，用于与电子束的操作同步地偏转 提供物镜和物镜偏转器。

    Plasma processing apparatus
    5.
    发明授权
    Plasma processing apparatus 失效
    等离子体处理装置

    公开(公告)号：US5413663A

    公开(公告)日：1995-05-09

    申请号：US74539

    申请日：1993-06-11

    申请人： Masahiro Shimizu ,  Takayuki Fukasawa ,  Yuichiro Yamazaki ,  Motosuke Miyoshi ,  Haruo Okano ,  Katsuya Okumura

    发明人： Masahiro Shimizu ,  Takayuki Fukasawa ,  Yuichiro Yamazaki ,  Motosuke Miyoshi ,  Haruo Okano ,  Katsuya Okumura

    IPC分类号： H01J37/32 ,  H01L21/00

    CPC分类号： H01L21/67069 ,  H01J37/3233

    摘要： A wafer plasma-etching apparatus includes electron generating, accelerating and processing chambers. Electron are drawn out of plasma generated in the electron generating chamber, accelerated in the accelerating chamber and introduced, as an electron beam, into the process chamber. A semiconductor wafer is positioned flat and parallel to an electron introducing direction in the process chamber. Process gas is introduced into the process chamber and excited into plasma by the electron beam. The wafer is etched by this plasma. Magnetic field is formed at the entrance of the process chamber such that the electron beam is divided to both sides of its extended center line in a horizontal plane and compressed flat in a vertical plane. The magnetic field is also formed such that the electron beam is carried in the horizontal direction at a position where the wafer is arranged in the process chamber. A sheet-like plasma region having a higher density of ions and a more uniform distribution thereof can be thus formed all over the surface of the wafer.

    摘要翻译： 晶片等离子体蚀刻装置包括电子发生，加速和处理室。 电子从在电子发生室中产生的等离子体中抽出，在加速室中被加速并且作为电子束引入到处理室中。 半导体晶片被定位成平行且平行于处理室中的电子引入方向。 工艺气体被引入处理室并通过电子束激发成等离子体。 通过该等离子体蚀刻晶片。 在处理室的入口处形成磁场，使得电子束在水平面被分割成其延伸的中心线的两侧，并在垂直平面中被压扁。 磁场也形成为使得电子束在晶片布置在处理室中的位置沿水平方向承载。 因此，可以在晶片的整个表面上形成具有较高的离子密度和更均匀分布的片状等离子体区域。

    Plasma apparatus
    6.
    发明授权
    Plasma apparatus 失效
    等离子体仪器

    公开(公告)号：US5639308A

    公开(公告)日：1997-06-17

    申请号：US552673

    申请日：1995-11-03

    申请人： Yuichiro Yamazaki ,  Motosuke Miyoshi ,  Katsuya Okumura

    发明人： Yuichiro Yamazaki ,  Motosuke Miyoshi ,  Katsuya Okumura

    IPC分类号： C23F4/00 ,  C23F4/02 ,  H01J27/18 ,  H01J37/32 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/24 ,  C23C16/48 ,  C23F1/02 ,  H01J27/20 ,  H05H1/16

    CPC分类号： H01J27/18 ,  H01J37/3233 ,  H01J37/32623 ,  H01J37/3266 ,  H05H1/24

    摘要： A plasma apparatus generates plasma by introducing electron beams into a processing chamber filled with a reactive gas for irradiation of the reactive gas with the introduced electron beams, to process a substance by the generated plasma. The plasma apparatus has a sample base for mounting the substance to be processed so that a processing surface of the substance is not directed in a direction perpendicular to a travel direction of the electron beams introduced into the processing chamber; a suppressing section for suppressing divergence of the electron beams introduced into the processing chamber; and a control section for controlling current density distribution of the divergence-suppressed electron beams so that current density distribution of ions contained in the plasma can be uniformalized on the substance to be processed.

    摘要翻译： 等离子体装置通过将电子束引入填充有用于用引入的电子束照射反应性气体的反应气体的处理室来产生等离子体，以通过产生的等离子体处理物质。 等离子体装置具有用于安装待处理物质的样品基底，使得物质的处理表面不指向与引入处理室的电子束的行进方向垂直的方向; 用于抑制引入到处理室中的电子束的发散的抑制部分; 以及用于控制发散抑制电子束的电流密度分布的控制部分，使得包含在等离子体中的离子的电流密度分布能够对被处理物质均匀化。

    Magnetic field immersion type electron gun
    7.
    发明授权
    Magnetic field immersion type electron gun 失效
    磁场浸入式电子枪

    公开(公告)号：US5548183A

    公开(公告)日：1996-08-20

    申请号：US364747

    申请日：1994-12-27

    申请人： Motosuke Miyoshi ,  Katsuya Okumura ,  Yuichiro Yamazaki

    发明人： Motosuke Miyoshi ,  Katsuya Okumura ,  Yuichiro Yamazaki

    IPC分类号： H01J37/143 ,  H01J37/06 ,  H01J37/065 ,  H01J37/073 ,  H01J37/18 ,  H01J41/12 ,  H01J41/18 ,  H01J3/20

    CPC分类号： H01J37/065 ,  H01J37/18 ,  H01J41/18

    摘要： In a magnetic field immersion type electron gun for controlling an electron beam emitted by an electron gun (51) with the use of an electric lens (56) and a magnetic field lens formed by permanent magnets (57, 58) of a coaxial ion pump (53), the ion pump magnets are a pair of cylindrical permanent magnets (57, 58) disposed coaxially with an optical axis (52) of the electron gun (51) in such a way as to sandwich a cylindrical ion pump anode (61) of the coaxial ion pump; the two permanent magnets are magnetized in a mutually opposing direction; a hollow cylindrical yoke (60) is disposed also coaxially with the optical axis (52) in such a way as to enclose the two permanent magnets (57, 58) within a hollow portion thereof; and the yoke (60) is formed with an annular yoke gap (63) in a radially inner circumferential surface of the yoke (60) to leak out a magnetic flux flowing through the yoke toward the optical axis. In the above-mentioned construction, the magnetic field lens can be formed efficiently with the use of the magnetic field generated by the permanent magnets for constituting the coaxial ion pump, and further the formed magnetic field lens can be superimposed upon the electron gun. Therefore, an electric field immersion type electron gun of high performance can be obtained, and further the electron gun chamber can be efficiently evacuated in the vicinity of the cathode tip of the electron gun.

    摘要翻译： 在使用电镜（56）和同轴离子泵的永磁体（57,58）形成的磁场透镜的电磁枪（51）发射的电子束的磁场浸渍型电子枪中， （53）中，离子泵磁体是与电子枪（51）的光轴（52）同轴配置的一对筒状的永久磁铁（57,58），夹着圆筒状离子泵阳极 ）的同轴离子泵; 两个永磁体在相互相反的方向被磁化; 中空圆柱形磁轭（60）还与光轴（52）同轴设置，以便将两个永磁体（57,58）包围在其中空部分内; 并且轭（60）在轭（60）的径向内周面上形成有环形磁轭间隙（63），以使流过磁轭的磁通向光轴泄漏。 在上述结构中，可以通过使用由用于构成同轴离子泵的永久磁铁产生的磁场来有效地形成磁场透镜，并且还可以将形成的磁场透镜叠加在电子枪上。 因此，可以获得高性能的电场浸没型电子枪，并且可以在电子枪的阴极尖端附近有效地排出电子枪室。

    Electron beam lithography system and pattern writing method
    8.
    发明授权
    Electron beam lithography system and pattern writing method 失效
    电子束光刻系统和图案写入方法

    公开(公告)号：US06525328B1

    公开(公告)日：2003-02-25

    申请号：US09624355

    申请日：2000-07-24

    申请人： Motosuke Miyoshi ,  Yuichiro Yamazaki ,  Katsuya Okumura

    发明人： Motosuke Miyoshi ,  Yuichiro Yamazaki ,  Katsuya Okumura

    IPC分类号： H01J3730

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174

    摘要： An electron beam lithography system 10 comprises an electron gun including a rectangular cathode 1 having an emission surface having an aspect ratio of other than 1, an illumination optical system 3 of an asymmetric lens system including multipole lenses Qa1 and Qa2, a CP aperture 5, and a projection optical system 8 of a symmetric lens system including multipole lenses Qb1 through Qb4. This electron beam lithography system 10 is used for emitting an electron beam at a low acceleration of 5 kV or less from the rectangular cathode 1, for controlling the illumination optical system so as to form an image of a desired character of the CP aperture 5 on an isotropic plane of incidence at different demagnifications in minor-axis and major-axis directions in accordance with the aspect ratio of the rectangular cathode 1, and for controlling the projection optical system 8 so that the electron beam leaving the CP aperture 5 as an aperture image is incident on a substrate 21 at the same demagnification in the minor-axis and major-axis directions and at different incident angles in the minor-axis and major-axis directions while passing through the trajectory without establishing any crossovers.

    摘要翻译： 电子束光刻系统10包括电子枪，其包括具有不同于1的纵横比的发射表面的矩形阴极1，包括多极透镜Qa1和Qa2的非对称透镜系统的照明光学系统3，CP孔5， 以及包括多极透镜Qb1至Qb4的对称透镜系统的投影光学系统8。 该电子束光刻系统10用于从矩形阴极1以5kV以下的低加速度发射电子束，用于控制照明光学系统，以便形成CP孔5的所需字符的图像 根据矩形阴极1的纵横比在短轴和长轴方向上的不同缩小的各向同性平面，并且用于控制投影光学系统8，使得离开CP孔5的电子束作为孔 图像在短轴和长轴方向上以相同的缩小入射在基板21上，并且在短轴和长轴方向上以不同的入射角同时穿过轨迹而不建立任何交叉。

    Electrostatic lens
    9.
    发明授权
    Electrostatic lens 失效
    静电镜片

    公开(公告)号：US5293045A

    公开(公告)日：1994-03-08

    申请号：US988701

    申请日：1992-12-10

    申请人： Motosuke Miyoshi ,  Katsuya Okumura ,  Yuichiro Yamazaki

    发明人： Motosuke Miyoshi ,  Katsuya Okumura ,  Yuichiro Yamazaki

    IPC分类号： H01J37/02 ,  H01J37/12

    CPC分类号： H01J37/12 ,  H01J37/026

    摘要： An electrostatic lens having at least three electrodes and an insulating holder for holding the electrodes, the inner wall of the holder being coated with a silicone carbide film. The silicone carbide film may be formed by means of a vapor deposition method. The energy of an electron beam is set to 1.5 keV or lower. The silicone carbide film may be added with an additive for controlling the electric conductivity of the silicone carbide film. The additive may be nitrogen.

    摘要翻译： 具有至少三个电极的静电透镜和用于保持电极的绝缘保持器，保持器的内壁涂覆有碳化硅膜。 可以通过气相沉积法形成碳化硅膜。 电子束的能量设定为1.5keV以下。 可以向该碳化硅膜添加用于控制碳化硅膜的导电性的添加剂。 添加剂可以是氮气。

    Method and apparatus for irradiating low-energy electrons
    10.
    发明授权
    Method and apparatus for irradiating low-energy electrons 失效
    辐射低能电子的方法和装置

    公开(公告)号：US5138169A

    公开(公告)日：1992-08-11

    申请号：US735532

    申请日：1991-07-26

    申请人： Yuichiro Yamazaki ,  Motosuke Miyoshi ,  Katsuya Okumura

    发明人： Yuichiro Yamazaki ,  Motosuke Miyoshi ,  Katsuya Okumura

    IPC分类号： G21K5/04 ,  H01J37/02 ,  H01J37/05 ,  H01J37/073 ,  H01J37/252 ,  H01J37/30 ,  H01J37/317 ,  H01J49/08

    CPC分类号： H01J37/05 ,  H01J37/026 ,  H01J37/073

    摘要： There is disclosed a method of irradiating low-energy electrons that has the steps of irradiating a primary electron beam from a primary electron beam irradiation portion onto a secondary electron emission portion to emit a secondary electron beam, accelerating the emitted secondary electron beam, removing high-energy components from that accelerated secondary beam, and decelerating the secondary electron beam without the high-energy components into a focus. And there is also disclosed an apparatus for irradiating low-energy electron that has a primary electron beam irradiating section, a secondary electron emitting section which receives the primary electron beam and emits a secondary electron beam, a secondary electron beam accelerating section, energy analyzing section which removes high-energy components from the accelerated secondary electron beam, to obtain low-energy secondary electrons, and deceleration section for decelerating the low-energy secondary electrons into a focus.