Charged beam drawing apparatus
    1.
    发明授权
    Charged beam drawing apparatus 失效
    充电光束拉制装置

    公开(公告)号:US5523576A

    公开(公告)日:1996-06-04

    申请号:US213041

    申请日:1994-03-15

    IPC分类号: H01J37/304 G01N23/225

    摘要: In a charged beam drawing apparatus for drawing a desired pattern on a sample by deflecting a charged beam on the sample while continuously moving a stage on which the sample is placed, a mark having a line-and-space pattern, in which a plurality of heavy metal marks each having a width equal to a side of the charged beam are arranged with spaces each equal to the width between them, is formed on the sample. The charged beam is radiated onto the mark while the position of the beam is fixed, and at the same time the stage is continuously moved in the longitudinal direction of the mark, thereby detecting a reflected beam from the mark. On the basis of the signal of the detected reflected beam, a relative vibration during the continuous movement of the stage is measured. This makes it possible to measure the relative vibration produced by the continuous movement of the stage, resulting in an increase in drawing accuracy.

    摘要翻译: 在一种带电波束牵伸装置中,用于通过使样品上的带电波束偏转,同时连续移动放置样品的载物台,从而在样品上绘制所需图案,具有线间距图案的标记,其中多个 在样品上形成各自具有等于带电束侧的宽度的重金属标记,每个间隔均等于它们之间的宽度。 充电光束在光束的位置被固定的同时被放射到标记上,并且同时在标记的纵向方向上连续地移动平台,从而从标记检测反射光束。 基于检测到的反射光束的信号,测量在该阶段的连续运动期间的相对振动。 这使得可以测量由台的连续运动产生的相对振动,导致拉拔精度的提高。

    Electron beam pattern transfer device and method for aligning mask and
semiconductor wafer
    2.
    发明授权
    Electron beam pattern transfer device and method for aligning mask and semiconductor wafer 失效
    用于对准掩模和半导体晶片的电子束图案转移装置和方法

    公开(公告)号:US4469949A

    公开(公告)日:1984-09-04

    申请号:US374724

    申请日:1982-05-04

    CPC分类号: H01L21/30 H01J37/3045

    摘要: According to the invention an electron beam pattern transfer device with an improved alignment means is provided.A first and a second mark M.sub.1, M.sub.2 for alignment purposes are formed on the surface of the wafer and the wafer holder, respectively. The first mark M.sub.1 is formed on the wafer by conventional lithographic technique and the second mark M.sub.2 consists of a hole or a heavy metal, such as Ta or Ta.sub.2 O.sub.5. A third alignment mark M.sub.3 is provided on the photocathode mask having a position corresponding to M.sub.2 on the wafer holder and spaced a known distance L.sub.2 from an imaginary reference position M.sub.4 on the mask. The first step of the alignment process requires the detection of a relative distance L.sub.1 between the first and second marks M.sub.1, M.sub.2 by conventional detecting means, such as an optical measuring means. In the next step, the relative position of the photocathode mask and the wafer holder is adjusted so that the distance between the marks M.sub.2 and M.sub.3 is made substantially equal to the difference between the distance L.sub.1 and the known distance L.sub. 2.

    摘要翻译: 根据本发明,提供了具有改进的对准装置的电子束图案转印装置。 分别在晶片和晶片保持器的表面上形成用于对准目的的第一和第二标记M1,M2。 第一标记M1通过常规平版印刷技术在晶片上形成,第二标记M2由孔或重金属如Ta或Ta2O5组成。 第三对准标记M3设置在光电阴极掩模上,其具有对应于晶片保持器上的M2的位置,并且与掩模上的假想参考位置M4隔开已知距离L2。 对准处理的第一步骤需要通过诸如光学测量装置的常规检测装置检测第一和第二标记M1,M2之间的相对距离L1。 在下一步骤中,调整光电阴极掩模和晶片保持器的相对位置,使得标记M2和M3之间的距离基本上等于距离L1和已知距离L 2之间的差。

    Electron beam pattern transfer system having an autofocusing mechanism
    3.
    发明授权
    Electron beam pattern transfer system having an autofocusing mechanism 失效
    具有自动聚焦机构的电子束图案转印系统

    公开(公告)号:US4572956A

    公开(公告)日:1986-02-25

    申请号:US525419

    申请日:1983-08-22

    摘要: An electron beam pattern transfer system is disclosed which includes a photoelectric transducing mask disposed within a vacuum container and adapted to transfer a photoelectron beam pattern corresponding to a pattern of the mask onto a sample according to an amount of an incident light, a DC voltage generator connected to vary a voltage applied between the mask and the sample, and a focusing coil of a superconductive magnet for creating a magnetic field of a predetermined intensity between the mask and the sample. When a mask-to-sample distance and/or magnetic field intensity varies undesirably, the variation is electrically detected by detectors. In order to compensate for the defocusing of the photoelectron beam pattern on the sample due to the above-mentioned variation, a microprocessor automatically calculates an amount of correction with respect to the intensity of the electric field between the mask and the sample, on a real-time basis and supplies its control signal to the DC voltage generator.

    摘要翻译: 公开了一种电子束图案转印系统,其包括设置在真空容器内并适于根据入射光量将对应于掩模图案的光电子束图案转移到样品上的光电转换掩模,直流电压发生器 连接以改变施加在掩模和样品之间的电压,以及用于在掩模和样品之间产生预定强度的磁场的超导磁体的聚焦线圈。 当掩模到采样距离和/或磁场强度变化不期望时,变化由检测器电检测。 为了补偿由于上述变化而导致的样品上的光电子束图案的散焦,微处理器自动地计算相对于掩模和样品之间的电场强度的校正量,实际上 并将其控制信号提供给直流电压发生器。

    Focused ion beam deposition using TMCTS
    5.
    发明授权
    Focused ion beam deposition using TMCTS 失效
    使用TMCTS聚焦离子束沉积

    公开(公告)号:US5639699A

    公开(公告)日:1997-06-17

    申请号:US420153

    申请日:1995-04-11

    摘要: According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal. According to this invention, there is provided to a method of repairing a divot defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of burying a material in the divot defect and forming a projecting portion projecting from a substrate surface, covering a region including the projecting portion with flattening films consisting of a material different from that of the substrate to flatten an upper surface of the region, performing simultaneous removal of the projecting portion and the flattening films around the projecting portion using a charged particle beam, and performing removal of the flattening films left in the step of performing simultaneous removal.

    摘要翻译: 根据本发明,提供了一种修复通过在基板上形成预定图案而获得的结构的凸点缺陷的方法,该方法具有以下步骤:在基板上形成由不同于基板的材料构成的第一薄膜 在凸起缺陷附近或接近凸块缺陷的情况下,在凸起缺陷上形成第二薄膜和使第一薄膜平坦化第二薄膜的上表面,同时去除凸起缺陷和上部的薄膜 使用带电粒子束的突出缺陷的一部分和凸起缺陷周围,并且执行在执行同时移除的步骤中留下的薄膜的去除。 根据本发明,提供了一种修复通过在基板上形成预定图案而获得的结构的凹陷缺陷的方法,该方法具有以下步骤:将材料埋在凹陷缺陷中并形成从基板表面突出的突出部分 使用由与基板不同的材料构成的平坦化膜覆盖包括突出部分的区域,以平坦化该区域的上表面,使用带电粒子束同时移除突出部分周围的突出部分和平坦化膜 并且执行在执行同时去除的步骤中留下的平坦化膜的去除。

    Topical patch preparation containing a delayed-type hypersensitivity inducer and methods for using the same
    8.
    发明授权
    Topical patch preparation containing a delayed-type hypersensitivity inducer and methods for using the same 失效
    包含延迟型超敏反应诱导剂的局部贴剂制剂及其使用方法

    公开(公告)号:US06761900B2

    公开(公告)日:2004-07-13

    申请号:US10080526

    申请日:2002-02-21

    IPC分类号: A61F1302

    摘要: Topical patch preparations that contain a delayed-type hypersensitivity inducer, e.g., 1-dichloro-2,4-dinitrobenzene (DNCB), and methods for using the same are provided. The subject topical patch preparations are made up of an adhesive gel composition that is present on a support, where the adhesive gel composition includes the delayed-type hypersensitivity inducer, a water-soluble polymer gel, water and a water holding agent. In using the subject topical patch preparations, the topical patch preparations are applied to a skin surface of a subject and maintained at the site of application for a period of time sufficient for an effective amount of the delayed-type hypersensitivity inducer to be administered to the subject, where this maintenance period typically does not exceed about 60 minutes. The subject invention finds use in a variety of applications where the administration of a delayed-type hypersensitivity inducer is desired, and is particularly suited for use in the treatment of HIV associated disease conditions, e.g., AIDS.

    摘要翻译: 提供含有延迟型超敏反应诱导剂例如1-氯-2,4-二硝基苯(DNCB)的局部贴剂制剂及其使用方法。 本发明的局部贴剂制剂由存在于载体上的粘合凝胶组合物组成,其中粘合性凝胶组合物包括延迟型超敏感诱导剂,水溶性聚合物凝胶,水和保水剂。 在使用本发明的局部贴剂制剂时,将局部贴剂制剂施用于受试者的皮肤表面并保持在施用部位足以使有效量的延迟型超敏反应诱导剂施用于 该维护期通常不超过约60分钟。 本发明可用于期望延迟型超敏反应诱导剂的施用的多种应用,并且特别适合用于治疗HIV相关疾病病症,例如艾滋病。

    Exposure monitor mask, exposure adjusting method and method of manufacturing semiconductor devices
    9.
    发明授权
    Exposure monitor mask, exposure adjusting method and method of manufacturing semiconductor devices 有权
    曝光监视器面罩,曝光调整方法以及制造半导体器件的方法

    公开(公告)号:US06226074B1

    公开(公告)日:2001-05-01

    申请号:US09510244

    申请日:2000-02-22

    IPC分类号: G03B2742

    CPC分类号: G03F7/70633

    摘要: An exposure monitor mask used with an exposure system for manufacturing ICs includes an exposure detecting pattern having at least three patterns arranged in one direction, the exposure detecting pattern including a pair of relative position detecting patterns with at least one variable intensity pattern that allows the intensity of light transmitted therethrough to vary monotonously in the one direction disposed between the pair of relative position detecting patterns.

    摘要翻译: 与用于制造IC的曝光系统一起使用的曝光监视器掩模包括具有沿一个方向布置的至少三个图案的曝光检测图案,曝光检测图案包括具有至少一个可变强度图案的一对相对位置检测图案,该可变强度图案允许强度 透过的光线在配置在一对相对位置检测图案之间的一个方向上单调变化。