摘要:
In a charged beam drawing apparatus for drawing a desired pattern on a sample by deflecting a charged beam on the sample while continuously moving a stage on which the sample is placed, a mark having a line-and-space pattern, in which a plurality of heavy metal marks each having a width equal to a side of the charged beam are arranged with spaces each equal to the width between them, is formed on the sample. The charged beam is radiated onto the mark while the position of the beam is fixed, and at the same time the stage is continuously moved in the longitudinal direction of the mark, thereby detecting a reflected beam from the mark. On the basis of the signal of the detected reflected beam, a relative vibration during the continuous movement of the stage is measured. This makes it possible to measure the relative vibration produced by the continuous movement of the stage, resulting in an increase in drawing accuracy.
摘要:
According to the invention an electron beam pattern transfer device with an improved alignment means is provided.A first and a second mark M.sub.1, M.sub.2 for alignment purposes are formed on the surface of the wafer and the wafer holder, respectively. The first mark M.sub.1 is formed on the wafer by conventional lithographic technique and the second mark M.sub.2 consists of a hole or a heavy metal, such as Ta or Ta.sub.2 O.sub.5. A third alignment mark M.sub.3 is provided on the photocathode mask having a position corresponding to M.sub.2 on the wafer holder and spaced a known distance L.sub.2 from an imaginary reference position M.sub.4 on the mask. The first step of the alignment process requires the detection of a relative distance L.sub.1 between the first and second marks M.sub.1, M.sub.2 by conventional detecting means, such as an optical measuring means. In the next step, the relative position of the photocathode mask and the wafer holder is adjusted so that the distance between the marks M.sub.2 and M.sub.3 is made substantially equal to the difference between the distance L.sub.1 and the known distance L.sub. 2.
摘要:
An electron beam pattern transfer system is disclosed which includes a photoelectric transducing mask disposed within a vacuum container and adapted to transfer a photoelectron beam pattern corresponding to a pattern of the mask onto a sample according to an amount of an incident light, a DC voltage generator connected to vary a voltage applied between the mask and the sample, and a focusing coil of a superconductive magnet for creating a magnetic field of a predetermined intensity between the mask and the sample. When a mask-to-sample distance and/or magnetic field intensity varies undesirably, the variation is electrically detected by detectors. In order to compensate for the defocusing of the photoelectron beam pattern on the sample due to the above-mentioned variation, a microprocessor automatically calculates an amount of correction with respect to the intensity of the electric field between the mask and the sample, on a real-time basis and supplies its control signal to the DC voltage generator.
摘要:
A photomask repair method including scanning an electron beam across a main surface of the photomask, thereby producing a pattern image of the photomask, identifying the position of a defective portion from the pattern image thus produced, and applying an electron beam to a region to be etched including a defective portion under an atmosphere of a gas capable of performing a chemical etching of a film material forming the photomask pattern, thereby removing a defect. In this method, the electron beam to be applied to the region to be etched is a shaped beam. The electron beam is set such that the side of the electron beam is applied in parallel to a borderline between a non-defective pattern and the defect.
摘要:
According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal. According to this invention, there is provided to a method of repairing a divot defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of burying a material in the divot defect and forming a projecting portion projecting from a substrate surface, covering a region including the projecting portion with flattening films consisting of a material different from that of the substrate to flatten an upper surface of the region, performing simultaneous removal of the projecting portion and the flattening films around the projecting portion using a charged particle beam, and performing removal of the flattening films left in the step of performing simultaneous removal.
摘要:
According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal.
摘要:
An electron-beam image transfer device includes an evacuated vessel having a main chamber and spare chamber extended therefrom and a specimen holder and mask holder disposed in the main chamber. A subchamber is formed near the spare chamber to house a specimen. The specimen in the subchamber is transferred to the spare chamber by a movable support through an opening which is always kept in an airtight state, and then brought to the specimen holder by a transferring mechanism.
摘要:
Topical patch preparations that contain a delayed-type hypersensitivity inducer, e.g., 1-dichloro-2,4-dinitrobenzene (DNCB), and methods for using the same are provided. The subject topical patch preparations are made up of an adhesive gel composition that is present on a support, where the adhesive gel composition includes the delayed-type hypersensitivity inducer, a water-soluble polymer gel, water and a water holding agent. In using the subject topical patch preparations, the topical patch preparations are applied to a skin surface of a subject and maintained at the site of application for a period of time sufficient for an effective amount of the delayed-type hypersensitivity inducer to be administered to the subject, where this maintenance period typically does not exceed about 60 minutes. The subject invention finds use in a variety of applications where the administration of a delayed-type hypersensitivity inducer is desired, and is particularly suited for use in the treatment of HIV associated disease conditions, e.g., AIDS.
摘要:
An exposure monitor mask used with an exposure system for manufacturing ICs includes an exposure detecting pattern having at least three patterns arranged in one direction, the exposure detecting pattern including a pair of relative position detecting patterns with at least one variable intensity pattern that allows the intensity of light transmitted therethrough to vary monotonously in the one direction disposed between the pair of relative position detecting patterns.
摘要:
3-carboxy quinoline derivatives, which are useful as YAK3 inhibitors are described herein. The described invention also includes methods of making such 3-carboxy quinoline derivatives as well as methods of using the same in the treatment of diseases mediated by inappropriate YAK3 activity.