公开(公告)号：US4456999A

公开(公告)日：1984-06-26

申请号：US270352

申请日：1981-06-04

申请人： Takashi Sugino ,  Kunio Itoh ,  Masaru Wada ,  Hirokazu Shimizu

发明人： Takashi Sugino ,  Kunio Itoh ,  Masaru Wada ,  Hirokazu Shimizu

IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/2238

摘要： A terrace-substrate laser is improved by forming a stripe-shaped impurity diffused current-injection region (27) from the cap layer (25) at least so as to reach the oblique lasing region (231) of the active layer (23), so that the corner part of the current injection region (27) touches the lasing region (231); thereby current injection efficiency to the lasing region is highly improved and the injected current is effectively limited in the oblique lasing region even when a large current is injected, and furthermore, a threshold current can be greatly reduced. This laser can perform a stable fundamental transverse mode oscillation even at a large current operation.

摘要翻译： 至少通过从盖层（25）形成条形杂质扩散电流注入区域（27）至达到有源层（23）的倾斜激光区域（231）来改善平台 - 衬底激光器， 使得电流注入区域（27）的拐角部分接触激光区域（231）; 因此即使在注入大电流的情况下，对激光区域的电流注入效率高度提高，并且在斜激光区域有效地限制注入电流，此外，可以大大降低阈值电流。 该激光器即使在大电流操作下也可以执行稳定的基本横模振荡。

公开(公告)号：US4392227A

公开(公告)日：1983-07-05

申请号：US224821

申请日：1981-01-13

申请人： Kunio Itoh ,  Takashi Sugino ,  Masaru Wada ,  Hirokazu Shimizu

发明人： Kunio Itoh ,  Takashi Sugino ,  Masaru Wada ,  Hirokazu Shimizu

IPC分类号： H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/2238 ,  H01S5/2059 ,  H01S5/3201 ,  H01S5/32308

摘要： In a terraced substrate type semiconductor laser comprising a semiconductor substrate (11) having a step (T) on its principal face, an active layer (13) with an oblique central region (131), defined between two bendings, as stripe-shaped lasing region near the foot of the step part (T) of the substrate (11), and a clad layer (14) formed on the active layer (13),The device is characterized by comprising a current injection region (22) which is formed by diffusing an impurity, in a manner that a diffusion front corner (221) penetrate the clad layer (14) and contacts the oblique lasing region (131) thereby to form the current injection path (221) very narrow and closely to the central part of the stripe-shaped lasing region (13), thereby effectively confining the injected current to the lasing region (131) and hence attaining very low threshold current and very high external differential quantum efficiency.

摘要翻译： 在包括在其主面上具有台阶（T）的半导体衬底（11）的梯形衬底型半导体激光器中，具有定义在两个弯曲部之间的倾斜中心区域（131）的有源层（13）作为条形激光 （11）的台阶部（T）的脚附近的区域，以及形成在有源层（13）上的包层（14）。该器件的特征在于包括形成有电流注入区域（22）的电流注入区域 通过以扩散前角（221）穿透包覆层（14）并与斜激光区域（131）接触的方式扩散杂质，从而形成非常窄且紧密相对于中心部分的电流注入路径（221） 由此有效地将注入的电流限制到激光区域（131），从而获得非常低的阈值电流和非常高的外部微分量子效率。

公开(公告)号：US4360920A

公开(公告)日：1982-11-23

申请号：US185922

申请日：1980-09-10

申请人： Masaru Wada ,  Hirokazu Shimizu ,  Takashi Sugino ,  Kunio Itoh

发明人： Masaru Wada ,  Hirokazu Shimizu ,  Takashi Sugino ,  Kunio Itoh

IPC分类号： H01L21/306 ,  H01L21/208 ,  H01S5/00 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/2238

摘要： In a semiconductor laser a semiconductor substrate has a terrace structure in a manner to have an upper face, a lower face, and a step part disposed between the upper and lower faces. A clad layer is formed on the semiconductor substrate having an upper part, a lower part, and a central part. The upper part is on the upper face and the step part. The lower part is on the lower face and the central part connecting the upper and lower parts and is thicker than the upper and lower parts in a manner that a step-shaped downward-bending surface of the central part is located above the lower face. An active layer formed on the clad layer includes an upper lateral part, a lower lateral part, a center part connecting the upper and lower lateral parts, with a lasing region being a part of the upper lateral part which is near a bending part of the step-shaped downward-bending surface.

摘要翻译： 在半导体激光器中，半导体衬底具有以上表面，下表面和设置在上表面和下表面之间的台阶部分的方式设置的露台结构。 在具有上部，下部和中心部的半导体基板上形成包覆层。 上部位于上表面和台阶部分。 下部位于下表面，中央部分连接上部和下部，并且比中部的台阶向下弯曲表面位于下表面上方更厚于上部和下部。 形成在包层上的有源层包括上侧部分，下侧部分，连接上下侧部分的中心部分，激光区域是上侧部分的靠近弯曲部分的一部分 台阶向下弯曲面。

公开(公告)号：US4366568A

公开(公告)日：1982-12-28

申请号：US217652

申请日：1980-12-18

申请人： Hirokazu Shimizu ,  Kunio Itoh ,  Takashi Sugino ,  Masaru Wada

发明人： Hirokazu Shimizu ,  Kunio Itoh ,  Takashi Sugino ,  Masaru Wada

IPC分类号： H01S5/223 ,  H01S3/19

CPC分类号： H01S5/223

摘要： In a semiconductor laser, an n-type first clad layer, an undoped active layer, and a p-type second clad layer are formed on an n-type semiconductor substrate by liquid phase sequential epitaxial growth. The second clad layer is photo-etched to form a stripe-shaped thicker part at the center and thinner parts on both sides thereof. Thereafter, an n-type isolation layer is further epitaxially formed, and a Zn impurity is diffused in a thinner part of the isolation layer in a stripe-shaped pattern at the position above the thicker part, thereby forming a p+-type conduction region in the central part of the thinner part of the n-type isolation layer. By forming the stripe-shaped ridge part in the clad layer, light lased in the active layer is effectively confined in a stripe-shaped part thereof which is underneath the ridge part. Therefore, a stable transverse mode of lasing results. By forming the thicker part, the n-type isolation layer, very closely above the thinner side parts of the active layer, injected current is effectively confined to the lasing region which is underneath the ridge part. Therefore, the threshold current is decreased.

摘要翻译： 在半导体激光器中，通过液相顺序外延生长在n型半导体衬底上形成n型第一覆盖层，未掺杂有源层和p型第二覆盖层。 第二覆盖层被光蚀刻以在中心形成条状较厚的部分，并在其两侧形成更薄的部分。 此后，进一步外延形成n型隔离层，并且在较厚部分上方的位置处，在杂质图案中的Zn隔离层的较薄部分中扩散Zn杂质，形成p +型导电区​​域 n型隔离层较薄部分的中心部分。 通过在包覆层中形成条状的脊部，在活性层中照射的光被有效地限制在其脊部下方的条状部分中。 因此，可以获得稳定的激光横向模式。 通过形成较厚的部分，非常接近活性层较薄侧面部分的n型隔离层注入电流有效地限制在脊部下方的激光区域。 因此，阈值电流降低。

公开(公告)号：US4365336A

公开(公告)日：1982-12-21

申请号：US208021

申请日：1980-11-18

申请人： Takashi Sugino ,  Hirokazu Shimizu ,  Masaru Wada ,  Kunio Itoh

发明人： Takashi Sugino ,  Hirokazu Shimizu ,  Masaru Wada ,  Kunio Itoh

IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/2238

摘要： A terraced-substrate structure semiconductor laser in accordance with the present invention comprises:a terrace-shaped semiconductor substrate having an upper face, a lower face and a step part disposed between said upper face and said lower face,a clad layer formed on said terrace shaped semiconductor substrate and including at least an upper part formed on said upper face and a step part having a triangular section and formed at a corner defined by said lower face and said step part, said step part being thicker than said upper part,an active layer formed on said first clad layer and including a horizontal upper part formed on said upper part of said first clad layer and an oblique lasing region formed oblique on said step part of said first clad layer, but excluding a lower horizontal part, hitherto formed on said lower face,a current injection electrode having a stripe shaped injection face disposed above said lasing region,the improvement is that said active layer is terminated substantially at a lower end of said oblique lasing region by etching away said lower horizontal part of the active layer and said clad layer at the part on said lower face, thereby limiting a path of injected current to enter only in said lasing region.

摘要翻译： 根据本发明的梯形半导体衬底结构半导体激光器包括：具有上表面，下表面和设置在所述上​​表面和所述下表面之间的台阶部分的平台状半导体衬底，形成在所述露台上的覆层 并且至少包括形成在所述上表面上的上部和具有三角形截面的阶梯部，并形成在由所述下表面和所述台阶部限定的拐角处，所述台阶部分比所述上部部分厚，活动部件 层，形成在所述第一包层上，并且包括形成在所述第一包层的所述上部上的水平上部部分和在所述第一包层的所述台阶部分上倾斜形成的倾斜激光区域，但不包括以前形成的下部水平部分 所述下表面，具有设置在所述激光区域上方的条形注入面的电流注入电极，改善的是所述活性层是终端 基本上在所述斜激光区域的下端，通过在所述下表面的部分刻蚀掉有源层和所述覆盖层的所述下水平部分，从而限制注入电流的路径仅在所述激光区域中进入。

公开(公告)号：US4675074A

公开(公告)日：1987-06-23

申请号：US761023

申请日：1985-07-31

申请人： Masaru Wada ,  Hirokazu Shimizu ,  Takao Shibutani ,  Kunio Itoh ,  Ken Hamada ,  Iwao Teramoto

发明人： Masaru Wada ,  Hirokazu Shimizu ,  Takao Shibutani ,  Kunio Itoh ,  Ken Hamada ,  Iwao Teramoto

IPC分类号： H01L21/306 ,  H01L33/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01S5/2232 ,  H01L21/30612 ,  H01L21/30617 ,  H01L33/0062 ,  H01S5/32308 ,  H01S5/2081 ,  H01S5/2201 ,  H01S5/32316

摘要： The invention provides a chemical etching method for a semiconductor device, which comprises a step of forming a first layer of Ga.sub.1-x Al.sub.x As (0.ltoreq.x . The slope angle of etch face of the second layer depends on the mol fraction y of the second layer, and the slope angle of etch face of the first layer depends on the mol fraction y of the second layer and the mol fraction x of the first layer. These facts are best utilized in the invention so that the etch profile of the first layer may have a desired slope angle. By utilizing this chemical etching method it is possible to produce by chemical etching a semiconductor laser having a flat cavity facet perpendicular to a junction; it is also possible to provide an inner stripe type semiconductor laser having grooves whose side walls are perpendicular.

摘要翻译： 本发明提供一种用于半导体器件的化学蚀刻方法，其包括形成具有表面（100）的第一层Ga 1-x Al x As（0 的方向化学蚀刻所述层的步骤。 第二层的蚀刻面的倾斜角取决于第二层的摩尔分数y，第一层的蚀刻面的倾斜角取决于第二层的摩尔分数y和第一层的摩尔分数x 层。 这些事实在本发明中最好地利用，使得第一层的蚀刻轮廓可以具有期望的倾斜角。 通过利用这种化学蚀刻方法，可以通过化学蚀刻具有垂直于结的平坦腔面的半导体激光器来制造; 也可以提供具有侧壁垂直的槽的内条型半导体激光器。

公开(公告)号：US4380861A

公开(公告)日：1983-04-26

申请号：US266134

申请日：1981-05-21

申请人： Takashi Sugino ,  Kunio Itoh

发明人： Takashi Sugino ,  Kunio Itoh

IPC分类号： H01S5/223 ,  H01L21/208

CPC分类号： H01S5/2238

摘要： In a semiconductor laser comprising an active layer epitaxially formed on a semiconductor substrate and at least a current limiting layer which defines a current injection region of a stripe shape,the improvement is that said substrate has a terrace part on its principle face,said active layer has two parallel bending parts defining a stripe shape active region facing said current injection region in between andsaid stripe shape active region is disposed with a specified angle to said principle face.

摘要翻译： 在包括在半导体衬底上外延形成的有源层和限定条形电流注入区的至少限流层的半导体激光器中，改进之处在于，所述衬底在其原理面上具有露台部分，所述有源层 具有两个平行的弯曲部分，其限定面向所述电流注入区域的条状形状有源区域，并且所述条形形状有源区域以与所述原理面形成特定角度设置。

公开(公告)号：US4432092A

公开(公告)日：1984-02-14

申请号：US270351

申请日：1981-06-04

申请人： Iwao Teramoto ,  Takashi Sugino ,  Kunio Itoh

发明人： Iwao Teramoto ,  Takashi Sugino ,  Kunio Itoh

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/22 ,  H01S5/20 ,  H01S5/2059 ,  H01S5/2202 ,  H01S5/2231

摘要： A very narrow current injection region (16") is made by means of terrace-shaping of the surface of the current limiting layer (13) forming a step thereon, the current limiting layer being on the epitaxially grown double hetero structure layers (10, 11 and 12) including the active layer (11). By so terrace-shaping, when Zn as a p-type impurity to form the current injection region (16) is diffused from the surface of the current limiting layer (13), the diffused region is formed to have a deeper part (16") and a shallower part (16'), and the deeper part (16") can be made very narrow by selecting the position of the stripe-shaped diffused region with respect to the step (14).

摘要翻译： 通过对在其上形成台阶的限流层（13）的表面进行露台成形来制造非常窄的电流注入区域（16“），限流层位于外延生长的双异质结构层（10” ，11和12），包括有源层（11）。 通过这样的露台成形，当形成电流注入区域（16）的作为p型杂质的Zn从限流层（13）的表面扩散时，扩散区域形成为具有较深部分（16' '）和较浅部分（16'），并且通过相对于台阶（14）选择条形扩散区域的位置，可以使较深部分（16“）非常窄。

公开(公告)号：US4296387A

公开(公告)日：1981-10-20

申请号：US040182

申请日：1979-05-18

申请人： Takashi Sugino ,  Kunio Itoh

发明人： Takashi Sugino ,  Kunio Itoh

IPC分类号： H01S5/223 ,  H01S3/19

CPC分类号： H01S5/2238

摘要： In a semiconductor laser comprising an active layer epitaxially formed on a semiconductor substrate and at least a current limiting layer which defines a current injection region of a stripe shape,the improvement is that said substrate has a terrace part on its principal face,said active layer has two parallel bending parts defining a stripe shape active region facing said current injection region inbetween andsaid stripe shape active region is disposed with a specified angle to said principal face.

摘要翻译： 在包括在半导体衬底上外延形成的有源层和限定条形电流注入区的至少限流层的半导体激光器中，改进之处在于，所述衬底在其主面上具有露台部分，所述有源层 具有两个平行的弯曲部分，其限定面向所述电流注入区域的条形形状有源区域，并且所述条形有源区域以与所述主面面成一定角度设置。

公开(公告)号：US5068866A

公开(公告)日：1991-11-26

申请号：US428517

申请日：1989-10-30

申请人： Masaru Wada ,  Kunio Itoh

发明人： Masaru Wada ,  Kunio Itoh

IPC分类号： H01S5/00 ,  H01S5/022 ,  H01S5/028 ,  H01S5/10

CPC分类号： H01S5/028 ,  H01L24/97 ,  H01S5/02244 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01S5/02212 ,  H01S5/02228 ,  H01S5/02248 ,  H01S5/0683

摘要： A laser chip is directly disposed on a support member through a mounting arrangement and a support member, the laser chip, and peripheral parts thereof are integrally sealed within a transparent plastic resin. In this structure, without requiring expensive materials and parts, a semiconductor laser apparatus may be manufactured by using the same materials and process as in the ordinary plastic-sealed LED, so that the cost may be reduced significantly.