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公开(公告)号：US6144155A
公开(公告)日：2000-11-07
申请号：US78133
申请日：1998-05-14
申请人： Takamasa Yoshikawa , Takashi Chuman , Nobuyasu Negishi , Shingo Iwasaki , Kiyohide Ogasawara , Hiroshi Ito
发明人： Takamasa Yoshikawa , Takashi Chuman , Nobuyasu Negishi , Shingo Iwasaki , Kiyohide Ogasawara , Hiroshi Ito
摘要： An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer is formed by oxidation or nitriding process of the electron supply layer and has a film thickness of 50 nm or greater. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.
摘要翻译： 电子发射装置表现出高电子发射效率。 该装置包括金属或半导体的电子供应层，形成在电子供给层上的绝缘体层和形成在绝缘体层上的薄膜金属电极。 绝缘层由电子供给层的氧化或氮化处理形成，膜厚为50nm以上。 当在电子供给层和薄膜金属电极之间施加电场时，电子发射装置发射电子。
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公开(公告)号：US6130503A
公开(公告)日：2000-10-10
申请号：US32111
申请日：1998-02-27
申请人： Nobuyasu Negishi , Takamasa Yoshikawa , Takashi Chuman , Kiyohide Ogasawara , Shingo Iwasaki , Hiroshi Ito
发明人： Nobuyasu Negishi , Takamasa Yoshikawa , Takashi Chuman , Kiyohide Ogasawara , Shingo Iwasaki , Hiroshi Ito
CPC分类号： B82Y10/00 , H01J1/312 , H01J2329/00
摘要： An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer is made of a dielectric substance and has a film thickness of 50 nm or greater. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.
摘要翻译： 电子发射装置表现出高电子发射效率。 该装置包括金属或半导体的电子供应层，形成在电子供给层上的绝缘体层和形成在绝缘体层上的薄膜金属电极。 绝缘体层由电介质材料制成，膜厚度为50nm以上。 当在电子供给层和薄膜金属电极之间施加电场时，电子发射装置发射电子。
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公开(公告)号：US5990605A
公开(公告)日：1999-11-23
申请号：US44819
申请日：1998-03-20
申请人： Takamasa Yoshikawa , Kiyohide Ogasawara , Hiroshi Ito , Masataka Yamaguchi , Shingo Iwasaki , Nobuyasu Negishi , Takashi Chuman
发明人： Takamasa Yoshikawa , Kiyohide Ogasawara , Hiroshi Ito , Masataka Yamaguchi , Shingo Iwasaki , Nobuyasu Negishi , Takashi Chuman
CPC分类号： B82Y10/00 , H01J1/312 , H01J2329/00
摘要： An electron emission device includes: a semiconductor layer; a porous semiconductor; and a thin-film metal electrode which are layered in turn. The electrode faces a vacuum space. The porous semiconductor layer has at least two or more of porosity-changed layers which have porosities which are different from each other in the thickness direction. The electron emission device emits electrons when an electric field is applied between the semiconductor layer and the thin-film metal electrode. An insulator layer made of a material selected from silicon oxide or silicon nitride may be formed between the porous semiconductor layer and the thin-film metal electrode. Si skeletons of the porous semiconductor layer are oxidized or nitrided.
摘要翻译： 电子发射装置包括：半导体层; 多孔半导体; 和依次层叠的薄膜金属电极。 电极面对真空空间。 多孔半导体层具有至少两个以上具有在厚度方向上彼此不同的孔隙率的孔隙率变化层。 当在半导体层和薄膜金属电极之间施加电场时，电子发射器件发射电子。 可以在多孔半导体层和薄膜金属电极之间形成由选自氧化硅或氮化硅的材料制成的绝缘体层。 多孔半导体层的Si骨架被氧化或氮化。
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公开(公告)号：US6147443A
公开(公告)日：2000-11-14
申请号：US078138
申请日：1998-05-14
申请人： Takamasa Yoshikawa , Takashi Chuman , Nobuyasu Negishi , Shingo Iwasaki , Kiyohide Ogasawara , Hiroshi Ito
发明人： Takamasa Yoshikawa , Takashi Chuman , Nobuyasu Negishi , Shingo Iwasaki , Kiyohide Ogasawara , Hiroshi Ito
摘要： An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The insulator layer contains chemical elements constituting the electron supply layer and has a film thickness of 50 nm or greater. When an electric field is applied between the electron supply layer and the thin-film metal electrode, the electron emission device emits electrons.
摘要翻译： 电子发射装置表现出高电子发射效率。 该装置包括金属或半导体的电子供应层，形成在电子供给层上的绝缘体层和形成在绝缘体层上的薄膜金属电极。 绝缘层包含构成电子供给层的化学元素，膜厚为50nm以上。 当在电子供给层和薄膜金属电极之间施加电场时，电子发射装置发射电子。
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公开(公告)号：US6023125A
公开(公告)日：2000-02-08
申请号：US36747
申请日：1998-03-09
CPC分类号： B82Y10/00 , H01J1/312 , H01J2329/00
摘要： An electron emission device exhibits a high electron emission efficiency. The device comprises an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode formed on the insulator layer. The electron emission device emits electrons when an electric field is applied between the electron supply layer and the thin-film metal electrode. The insulator layer is a dielectric layer having a thickness of 50 nanometers or more, and formed by a vacuum evaporation process with a layer forming rate of 0.5 to 100 nanometers/minute.
摘要翻译： 电子发射装置表现出高电子发射效率。 该装置包括金属或半导体的电子供应层，形成在电子供应层上的绝缘体层和形成在绝缘体层上的薄膜金属电极。 当在电子供给层和薄膜金属电极之间施加电场时，电子发射装置发射电子。 绝缘体层是厚度为50纳米以上的电介质层，通过真空蒸镀法形成，层数为0.5〜100纳米/分钟。
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16.发明授权
公开(公告)号：US5426632A
公开(公告)日：1995-06-20
申请号：US288910
申请日：1994-08-11
IPC分类号： G11B3/70 , G11B7/0045 , G11B7/24 , G11B7/248 , G11B7/257
CPC分类号： G11B7/248 , G11B3/707 , G11B7/0045 , G11B7/00452 , G11B7/24 , G11B7/2492 , G11B2007/25706 , G11B2007/2571 , G11B2007/25715 , G11B2007/25718 , G11B7/2533 , G11B7/2534 , G11B7/2542 , G11B7/2575 , G11B7/2578 , G11B7/2595
摘要： An optical information recording medium recordable of the analogue NTSC color video signal under the conditions of a high S/N ratio and a low jitter, and capable of being played by a commercially available LD player. The medium comprises: a transparent substrate on which pre-grooves are formed with a depth of 1450-2050 angstroms; an optical absorbing layer with an absorbance of 0.7-0.9 made of palladium phthalocyanine dye formed on the substrate, the absorbing layer having pits each having a changed reflectivity being duty-cycle modulated in response to a limited waveform which is formed through the steps of: adding at least one of a second FM carrier and a third pulse carrier to a first FM carrier having a first center frequency and a first frequency band, the second FM carrier having a second center frequency lower than the first center frequency and a second frequency band spaced from the first frequency band, the third pulse carrier having a pulse-repetition frequency lower than the second center frequency and a third frequency band spaced from the second frequency band, to form a frequency-division multiplex signal; and symmetrically clipping the multiplex signal to form the limited waveform; and reflecting layer formed on the optical absorbing layer.
摘要翻译： 在高S / N比和低抖动的条件下可记录模拟NTSC彩色视频信号的光学信息记录介质，并且能够由市售的LD播放器播放。 介质包括：透明基板，其上形成有深度为1450-2050埃的预凹槽; 在衬底上形成的由酞菁酞菁染料制成的吸光度为0.7-0.9的光吸收层，具有响应于通过以下步骤形成的有限波形进行占空比调制的具有改变的反射率的凹坑的吸收层： 将第二FM载波和第三脉冲载波中的至少一个添加到具有第一中心频率和第一频带的第一FM载波，所述第二FM载波具有低于第一中心频率的第二中心频率和第二频带 与第一频带间隔开，第三脉冲载波具有低于第二中心频率的脉冲重复频率和与第二频带间隔的第三频带，以形成分频多路复用信号; 并对称地限幅多路复用信号以形成有限波形; 以及形成在光吸收层上的反射层。
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公开(公告)号：US09674511B2
公开(公告)日：2017-06-06
申请号：US13825507
申请日：2011-03-15
申请人： Hiroshi Ito
发明人： Hiroshi Ito
CPC分类号： H04N13/341 , G02B27/225 , G02B27/2264 , H04N13/32
摘要： The invention can provide a stereoscopic image display device, which achieves advantages of both a “glasses” device and a “naked-eye” device, while having a small size. When a right-eye image is displayed, a light blocking region forms on the left side of the center line, and when a left-eye image is displayed, a light blocking region forms on the right side of the center line. When the viewer is located in the regions, the right eye views the right-eye image, and the left eye views the left-eye image. Thus, even when the viewer faces stereoscopic display device with naked eyes, the viewer can view the stereoscopic image as long as the eyes of the viewer are located in the light blocking regions. The right and left images are mixed in the region other than the light blocking regions. However, multiple viewers can view the stereoscopic image when wearing the glasses.
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18.发明授权公开(公告)号：US09330613B2
公开(公告)日：2016-05-03
申请号：US13885109
申请日：2011-06-13
申请人： Hiroshi Ito
发明人： Hiroshi Ito
CPC分类号： G09G3/3607 , G09G3/003 , G09G3/3648 , G09G2310/0224 , G09G2310/061 , H04N13/144 , H04N13/315 , H04N13/341
摘要： Uniformize afterimages caused by black insertion to each image when two types of images are alternately displayed. There are provided a left and right image alternate output unit, a mask pattern storage unit, a mask pattern selection counter, and a mask synthesizing unit. The left and right image alternate output unit alternately outputs two types of video frames. The mask pattern storage unit stores m mask patterns, wherein basic regions are defined in a pixel region of a liquid crystal panel, the pixel region has m pixels arrayed in a matrix, m is an even number equal to or greater than 4, the in mask patterns have different arrangements of mask pixels in the basic region, and the number of the mask pixels is an even number smaller than m and equal to or greater than 2.
摘要翻译： 当交替显示两种类型的图像时，均匀化由黑色插入引起的每个图像所造成的余像。 提供了左右图像交替输出单元，掩模图案存储单元，掩模图案选择计数器和掩码合成单元。 左右图像交替输出单元交替输出两种类型的视频帧。 掩模图案存储单元存储m个掩模图案，其中基本区域被限定在液晶面板的像素区域中，像素区域具有以矩阵排列的m个像素，m为等于或大于4的偶数， 掩模图案在基本区域中具有不同的掩模像素布置，并且掩模像素的数量是小于m且等于或大于2的偶数。
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19.发明授权公开(公告)号：US08819903B2
公开(公告)日：2014-09-02
申请号：US13197464
申请日：2011-08-03
申请人： Toshihiro Shimizu , Jiro Kato , Eiju Hirai , Hiroshi Ito
发明人： Toshihiro Shimizu , Jiro Kato , Eiju Hirai , Hiroshi Ito
IPC分类号： H04R17/00 , H01L41/29 , B41J2/16 , H01L41/314 , B41J2/14
CPC分类号： H01L41/29 , B41J2/161 , B41J2/1628 , B41J2/1631 , B41J2002/14491 , H01L41/314 , Y10T29/42 , Y10T29/49002 , Y10T29/49401
摘要： A manufacturing method of a piezoelectric element includes: forming a first conductive layer upon a substrate; forming a piezoelectric layer upon the first conductive layer; forming a second conductive layer upon the piezoelectric layer; forming a third conductive layer upon the second conductive layer; forming a first portion, a second portion, and an opening portion provided between the first portion and the second portion by patterning the third conductive layer; forming a resist layer that covers the opening portion and covers the edges of the first portion and the second portion that face the opening portion side; and forming a first conductive portion and a second conductive portion configured from the first portion and the second portion, and forming a third conductive portion configured from the second conductive layer, by dry-etching the second conductive layer using the first portion, the second portion, and the resist layer as a mask.
摘要翻译： 压电元件的制造方法包括：在基板上形成第一导电层; 在所述第一导电层上形成压电层; 在所述压电层上形成第二导电层; 在所述第二导电层上形成第三导电层; 通过对第三导电层进行构图而形成第一部分，第二部分和设置在第一部分和第二部分之间的开口部分; 形成覆盖所述开口部并且覆盖所述第一部分和面向所述开口部侧的所述第二部分的边缘的抗蚀剂层; 以及形成由所述第一部分和所述第二部分构成的第一导电部分和第二导电部分，以及通过使用所述第一部分干蚀刻所述第二导电层，形成由所述第二导电层构成的第三导电部分，所述第二部分 ，抗蚀剂层作为掩模。
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公开(公告)号：US08802357B2
公开(公告)日：2014-08-12
申请号：US13326404
申请日：2011-12-15
申请人： Hiroshi Ito , Linda Karin Sundberg
发明人： Hiroshi Ito , Linda Karin Sundberg
IPC分类号： G03F7/095
CPC分类号： G03F7/2041 , G03F7/0046 , G03F7/11
摘要： A method of forming an image on a photoresist. The method includes: forming a photoresist over a substrate; applying a topcoat composition, the topcoat composition comprising at least one fluorine-containing polymer and a casting solvent, onto the photoresist; removing the casting solvent of the topcoat composition resulting in the formation of a topcoat material over the photoresist; exposing the photoresist to radiation, the radiation changing a chemical composition of the regions of the photoresist exposed to the radiation, forming exposed and unexposed regions in the photoresist; and removing i) the topcoat material and ii) the exposed regions of the photoresist or the unexposed regions of the photoresist.
摘要翻译： 在光致抗蚀剂上形成图像的方法。 该方法包括：在衬底上形成光致抗蚀剂; 将面漆组合物，包含至少一种含氟聚合物和浇铸溶剂的面漆组合物涂覆到光致抗蚀剂上; 除去顶涂层组合物的浇铸溶剂，导致在光致抗蚀剂上形成顶涂层材料; 将光致抗蚀剂暴露于辐射，辐射改变暴露于辐射的光刻胶的区域的化学组成，在光致抗蚀剂中形成暴露和未曝光的区域; 并去除i）面漆材料和ii）光致抗蚀剂的曝光区域或光致抗蚀剂的未曝光区域。
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