PATTERNING PROCESS
    14.
    发明申请
    PATTERNING PROCESS 有权
    绘图过程

    公开(公告)号:US20120270159A1

    公开(公告)日:2012-10-25

    申请号:US13450867

    申请日:2012-04-19

    IPC分类号: G03F7/20

    摘要: A negative pattern is formed by applying a resist composition onto a substrate, baking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to selectively dissolve the unexposed region of resist film. The resist composition comprising a hydrogenated ROMP polymer comprising recurring units having an acid labile group-protected carboxyl group and recurring units having a lactone structure displays a high dissolution contrast in organic solvent development, and exhibits high dry etch resistance even when the acid labile group is deprotected through exposure and PEB.

    摘要翻译: 通过将抗蚀剂组合物涂布在基材上,烘烤,暴露于高能量辐射,烘烤(PEB)和在有机溶剂显影剂中曝光的抗蚀剂膜显影以选择性地溶解抗蚀剂膜的未曝光区域,形成负型图案。 包括含有酸不稳定基团保护的羧基的重复单元和具有内酯结构的重复单元的氢化ROMP聚合物的抗蚀剂组合物在有机溶剂显影中显示出高的溶解对比度,并且即使当酸不稳定基团为 通过暴露和PEB去保护。

    Patterning process
    18.
    发明授权
    Patterning process 有权
    图案化过程

    公开(公告)号:US08722321B2

    公开(公告)日:2014-05-13

    申请号:US13450867

    申请日:2012-04-19

    IPC分类号: G03F7/26

    摘要: A negative pattern is formed by applying a resist composition onto a substrate, baking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to selectively dissolve the unexposed region of resist film. The resist composition comprising a hydrogenated ROMP polymer comprising recurring units having an acid labile group-protected carboxyl group and recurring units having a lactone structure displays a high dissolution contrast in organic solvent development, and exhibits high dry etch resistance even when the acid labile group is deprotected through exposure and PEB.

    摘要翻译: 通过将抗蚀剂组合物涂布在基材上,烘烤,暴露于高能量辐射,烘烤(PEB)和在有机溶剂显影剂中曝光的抗蚀剂膜显影以选择性地溶解抗蚀剂膜的未曝光区域,形成负图案。 包括含有酸不稳定基团保护的羧基的重复单元和具有内酯结构的重复单元的氢化ROMP聚合物的抗蚀剂组合物在有机溶剂显影中显示出高的溶解对比度,并且即使当酸不稳定基团为 通过暴露和PEB去保护。