摘要:
Compounds having the formula (I): wherein A represents a group such as a cyclic group, R1 and R2 represent groups such as alkyl groups or hydroxymethyl groups, and n represents 1 or 2, or pharmacologically acceptable salts thereof or pharmacologically acceptable esters thereof have superior activity and stability, and are useful for the treatment and/or prevention of diabetes mellitus, or the like.
摘要:
A magnetic memory cell 1 is provided with a magnetic recording layer 10 which is a ferromagnetic layer and a pinned layer 30 connected with the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 has a magnetization inversion region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization inversion region 13 has a magnetization whose orientation is invertible and overlaps the pinned layer 30. The first magnetization fixed region 11 is connected with a first boundary B1 in the magnetization inversion region 13 and a magnetization orientation is fixed on a first direction. The second magnetization fixed region 12 is connected with a second boundary B2 in magnetization inversion region 13 and a magnetization orientation is fixed on a second direction. The first direction and the second direction are opposite to each other.
摘要:
The present invention relates to a benzylphenyl glucopyranoside derivative having an excellent inhibitory effect on human SGLT1 and/or SGLT2 activity. There is provided a compound or a pharmacologically acceptable salt thereof represented by the following general formula (I): wherein R1 represents a hydrogen atom, an amino group, a hydroxy C1-C6 alkyl group, etc.; R2 represents a hydrogen atom, etc.; R3 represents a C1-C6 alkyl group, a hydroxy C1-C6 alkyl group, etc.; R4 represents a hydrogen atom, a C2-C7 acyl group, etc.; R5, R6, R7, and R8 are the same or different and each represents a hydrogen atom or a C1-C6 alkyl group, provided that R5, R6, R7 and R8 are not hydrogen atoms at the same time; n is 0 to 4; and X is CH or N.
摘要:
Compounds having the formula (I): wherein A represents a group such as a cyclic group, R1 and R2 represent groups such as alkyl groups or hydroxymethyl groups, and n represents 1 or 2, or pharmacologically acceptable salts thereof or pharmacologically acceptable esters thereof have superior activity and stability, and are useful for the treatment and/or prevention of diabetes mellitus, or the like.
摘要:
In a magnetic random access memory, a memory cell includes a magnetic field generating section having an extension wiring line, and connected with a first selected bit line, a conductive pattern, and a magnetic resistance element having a spontaneous magnetization, storing a data and connected between the extension wiring line and the conductive pattern. In a data write operation into the memory cell, a write data is written in the magnetic resistance element of the memory cell by a write electric current which flows through the extension wiring line of the magnetic field generating section of the memory cell, and a value of the write data is determined based on a direction of the write electric current. In a data read operation from the memory cell, a read electric current flows through the extension wiring line of the magnetic field generating section and the magnetic resistance element in the memory cell. A memory cell array section includes the memory cells arranged in a matrix, and each memory cell is connected with a first word line and a first bit line at least, the gate section.
摘要:
An air shower for removing a particle from an object by blowing air to the object which includes at least one first outlet for discharging the air from the at least one first outlet toward at least a portion of the object so that a flow axis of the air flowing out of the at least one first outlet is swung frequently and alternately in a first swingable direction, and at least one second outlet for discharging the air from the at least one second outlet so that a flow axis of the air flowing out of the at least one second outlet is swung frequently and alternately in a second swingable direction which is different from the first swingable direction. The first swingable direction and the second swingable direction extend so as to be non-parallel to one another and to intersect one another.
摘要:
A magnetic random access memory is composed of a plurality of first signal lines provided to extend in a first direction, a plurality of second signal lines provided to extend in a second direction substantially perpendicular to the first direction, a plurality of memory cells respectively provided at the intersections of the plurality of first signal lines and the plurality of second signal lines, and a plurality of magnetic structures respectively provided to the plurality of memory cells. Each of the plurality of memory cells has a magneto-resistance element containing a spontaneous magnetization layer which has a first threshold function, and the direction of the spontaneous magnetization of the spontaneous magnetization layer is reversed when an element applied magnetic field having the intensity equal to or larger than a first threshold function value is applied. Each of the plurality of magnetic structures has a second threshold function, and generates a magnetic structure magnetic field in response to a structure-applied magnetic field. When the structure-applied magnetic field has the intensity equal to or larger than the second threshold function value, a third magnetic field is generated as the magnetic structure magnetic field. When the structure applied magnetic field has the intensity less than the second threshold function value, a fourth magnetic field is generated which is weaker than the third magnetic field as the magnetic structure magnetic field. A first write current supplied to one of the plurality of first signal lines as a first selected signal line, and a first magnetic field is generated. A second write current is supplied to one of the plurality of second signal lines as a second selected signal line, and a second magnetic field is generated. A first synthetic magnetic field of the first magnetic field and the second magnetic field is applied to the magnetic structure as the structure applied magnetic field. The element applied magnetic field having the intensity equal to or larger than the first threshold function value is applied to the selected memory cell provided at the intersection of the first selected signal line and the second selected signal line. A second synthetic magnetic field of the first synthetic magnetic field and the magnetic structure magnetic field is generated as the element applied magnetic field such that the element applied magnetic field having the intensity less than the first threshold function value is applied to each of non-selected memory cells other than the selected memory cell.
摘要:
An air shower for removing a particle from an object by blowing air to the object which includes at least one first outlet for discharging the air from the at least one first outlet toward at least a portion of the object so that a flow axis of the air flowing out of the at least one first outlet is swung frequently and alternately in a first swingable direction, and at least one second outlet for discharging the air from the at least one second outlet so that a flow axis of the air flowing out of the at least one second outlet is swung frequently and alternately in a second swingable direction which is different from the first swingable direction. The first swingable direction and the second swingable direction extend so as to be non-parallel to one another and to intersect one another.
摘要:
An on board refueling vapor recovery system includes a first fuel vapor passage for connecting a fuel tank with a canister, a second fuel vapor passage for connecting an inlet portion of a fuel filler pipe with the fuel vapor passage (a tank main body) and a check valve in the second fuel vapor passage. The check valve is integrated with a first quick connector of a resin hose (a resin tube) which constitutes the second fuel vapor passage. Therefore, the number of man hours required for assembling the on board refueling vapor recovery system can be reduced. In addition, the space required for installing any of the on board refueling vapor recovery system can also be reduced. Furthermore, the amount of released fuel evaporative emissions or fuel evaporative emissions can be reduced.
摘要:
Compounds of formula (I) or their salts or esters: [wherein R1 is alkyl or haloalkyl; R2 and R3 each represents hydrogen or aliphatic acyl; X is hydroxy, halogen, alkoxy, or a group of formula RaO—, where Ra is aliphatic acyl; Y is a group of formula RbRcN— or RbRcN—O—, where Rb and Rc each is hydrogen or alkyl; and Z is oxygen or sulfur] have excellent sialidase inhibitory activity and are therefore useful for the treatment and prevention of influenza and other viral diseases where the replication of the virus is susceptible to sialidase inhibitors.