公开(公告)号：US20080233754A1

公开(公告)日：2008-09-25

申请号：US12126308

申请日：2008-05-23

申请人： Eiichi NISHIMURA ,  Kaoru Maekawa

发明人： Eiichi NISHIMURA ,  Kaoru Maekawa

IPC分类号： H01L21/461

CPC分类号： H01L21/67069 ,  H01L21/02087 ,  H01L21/31116

摘要： A substrate peripheral film-removing apparatus which is capable of removing a film from a substrate periphery without complicating the construction of the apparatus. A wafer chamber receives a wafer having an SiO2 film formed on a periphery thereof. In a beveled portion-receiving chamber, film-removing chemical processing is carried out on at least part of the beveled portion of the wafer, using a process gas.

摘要翻译： 一种能够从基板周边除去膜的基板周边膜去除装置，而不会使装置的结构复杂化。 晶片室接收在其周边形成有SiO 2膜的晶片。 在斜面部分接收室中，使用处理气体在晶片的至少部分倾斜部分上进行除膜化学处理。

公开(公告)号：US20080213998A1

公开(公告)日：2008-09-04

申请号：US12040256

申请日：2008-02-29

申请人： Hiroyuki Nagai ,  Hidenori Miyoshi ,  Kaoru Maekawa

发明人： Hiroyuki Nagai ,  Hidenori Miyoshi ,  Kaoru Maekawa

IPC分类号： H01L21/44 ,  C23C16/00

CPC分类号： C23C14/14 ,  C23C14/5806 ,  C23C14/5846 ,  H01L21/2855 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76873

摘要： The semiconductor device manufacturing method includes forming an alloy film of copper and an additive metal along a wall surface of a recess portion of an interlayer insulating film in a surface of a substrate; forming a barrier layer made of a compound of the additive metal and a constituent element of the interlayer insulating film; heating the substrate under an atmosphere containing an organic acid, an organic acid anhydride, or ketones to precipitate surplus additive metal onto a surface of the alloy film; and burying copper in the recess portion after heating the substrate. Since the organic acid, the organic acid anhydride, and the ketones have a reducing power for Cu, an oxidation of Cu in the alloy film is suppressed while a barrier layer made of a compound of the additive metal and a constituent element of the insulating film is formed.

摘要翻译： 半导体器件的制造方法包括在衬底的表面中沿着层间绝缘膜的凹部的壁面形成铜和添加金属的合金膜; 形成由所述添加金属的化合物和所述层间绝缘膜的构成元素构成的阻挡层; 在含有机酸，有机酸酐或酮的气氛下加热基材，使剩余的添加剂金属沉积在合金膜的表面上; 并在加热基板之后将铜埋入凹部中。 由于有机酸，有机酸酐和酮对Cu具有还原能力，所以抑制了合金膜中Cu的氧化，而由添加金属的化合物和绝缘膜的构成元素制成的阻挡层 形成了。

公开(公告)号：US20080230375A1

公开(公告)日：2008-09-25

申请号：US12072089

申请日：2008-02-22

申请人： Kaoru Maekawa ,  Hiroyuki Nagai ,  Tatsuo Hatano ,  Takashi Sakuma

发明人： Kaoru Maekawa ,  Hiroyuki Nagai ,  Tatsuo Hatano ,  Takashi Sakuma

IPC分类号： C23C14/34 ,  C23C14/54

CPC分类号： C23C14/185 ,  C23C14/027 ,  C23C14/345 ,  C23C14/544 ,  H01L21/2855 ,  H01L21/76844 ,  H01L21/76855 ,  H01L21/76873 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： The objective of the present invention is to provide a technique capable of easily forming an alloy layer containing an additive metal on an object to provide a concentration gradient in a thickness direction by sputtering in one treatment vessel. That is, the present invention can form a film with the desired concentration, and includes a first film forming process and a second film forming process that changes at least one of, the pressure in the treatment vessel, and the electric power so they are different from the first film forming process, so that the concentration of the additive metal is different from the concentration of the additive metal of the first alloy film.

摘要翻译： 本发明的目的是提供一种能够在一个处理容器中通过溅射在物体上容易地形成含有添加金属的合金层以在厚度方向上提供浓度梯度的技术。 也就是说，本发明可以形成具有所需浓度的膜，并且包括第一成膜工艺和第二成膜工艺，其改变处理容器中的压力和电功率中的至少一个，使得它们不同 从第一成膜工序，使添加剂金属的浓度与第一合金膜的添加金属的浓度不同。

公开(公告)号：US20070141843A1

公开(公告)日：2007-06-21

申请号：US11564662

申请日：2006-11-29

申请人： Eiichi Nishimura ,  Kaoru Maekawa

发明人： Eiichi Nishimura ,  Kaoru Maekawa

IPC分类号： C23F1/00 ,  H01L21/302 ,  C03C25/68

CPC分类号： H01L21/67069 ,  H01L21/02087 ,  H01L21/31116

摘要： A substrate peripheral film-removing apparatus which is capable of removing a film from a substrate periphery without complicating the construction of the apparatus. A wafer chamber receives a wafer having an SiO2 film formed on a periphery thereof. In a beveled portion-receiving chamber, film-removing chemical processing is carried out on at least part of the beveled portion of the wafer, using a process gas.

摘要翻译： 一种能够从基板周边除去膜的基板周边膜去除装置，而不会使装置的结构复杂化。 晶片室接收在其周边形成有SiO 2膜的晶片。 在斜面部分接收室中，使用处理气体在晶片的至少部分倾斜部分上进行除膜化学处理。

公开(公告)号：US06890848B2

公开(公告)日：2005-05-10

申请号：US10069274

申请日：2001-06-28

申请人： Kaoru Maekawa ,  Satohiko Hoshino ,  Masahito Sugiura ,  Federica Allegretti

发明人： Kaoru Maekawa ,  Satohiko Hoshino ,  Masahito Sugiura ,  Federica Allegretti

IPC分类号： H01L21/3105 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/522 ,  H01L21/4763

CPC分类号： H01L21/76835 ,  H01L21/02126 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02282 ,  H01L21/02299 ,  H01L21/02318 ,  H01L21/76801 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76829

摘要： A method of fabricating a semiconductor device includes the steps of forming a first insulation film on a substrate by a spin-on process, applying a curing process to the first insulation film at a temperature of 380-500° C. over a duration of 5-180 seconds, and forming a second insulation film on the first insulation film by a spin-on process.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：通过旋涂工艺在衬底上形成第一绝缘膜，在380-500℃的温度下对第一绝缘膜施加固化过程，持续时间为5 -180秒，并且通过旋涂工艺在第一绝缘膜上形成第二绝缘膜。

公开(公告)号：US06776874B2

公开(公告)日：2004-08-17

申请号：US09736147

申请日：2000-12-15

申请人： Yasuo Kobayashi ,  Kotaro Miyatani ,  Kaoru Maekawa

发明人： Yasuo Kobayashi ,  Kotaro Miyatani ,  Kaoru Maekawa

IPC分类号： H05H100

CPC分类号： H01L21/02063 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J2237/2001 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67115

摘要： A processing method and apparatus for removing a native oxide film from the surface of a subject to be treated, wherein plasma is generated from N2 and H2 gases and then activated to form an activated gas species, NF3 gas is added to the activated gas species to generate an activated gas of these three gases, the subject is cooled to not higher than a predetermined temperature by a cooling means, gas generated from the N2, H2 and NF3 gases is reacted with the surface of the subject to degenerate the native oxide film into a reactive film, the reactive film is sublimated and thus the native oxide film is removed if the subject is heated to a given temperature; a cluster system which includes the above apparatus and other apparatuses and which is capable of carrying a subject to be treated in an unreactive atmosphere.

摘要翻译： 一种用于从待处理对象的表面除去天然氧化物膜的处理方法和装置，其中从N 2和H 2气体产生等离子体，然后激活以形成活化气体物质，将NF 3气体加入到活化气体物质中 产生这三种气体的活性气体，通过冷却装置将被检体冷却至不高于预定温度，从N2，H2和NF3气体产生的气体与受试者的表面反应，将天然氧化物膜简化为 反应性膜，活性膜升华，因此如果受试者被加热到给定温度，则去除天然氧化物膜; 一种集群系统，其包括上述装置和其他装置，并且能够携带在无反应气氛中待处理的对象。