摘要:
There is described apparatus and methods for transporting and processing substrates including wafers as to efficiently produce at reasonable costs improved throughput as compared to systems in use today. A key element is the use of a transport chamber along the sides of processing chambers for feeding substrates into a controlled atmosphere through a load lock and then along a transport chamber as a way of reaching processing chambers and then out of the controlled atmosphere following processing in the processing chambers.
摘要:
A plurality of chamber are arranged about a transport chamber. The linear transport chamber may include a linear track supporting robot arms. The robot arms transport substrates to and from the chambers. Each chamber includes a plurality of evaporators, each controlled independently. Each substrate positioned in the chamber is coated from a plurality of the evaporators, such that by controlling the operation of each evaporator independently the formation of the layers and the concentration gradient of each layer can be precisely controlled.
摘要:
An enclosure for generating a secondary environment within a processing chamber for coating a substrate. An enclosure wall forms a secondary environment encompassing the coating source, plasma, and the substrate, and separating them from interior of the processing chamber. The enclosure wall includes a plurality of pumping channels for diverting gaseous flow away from the substrate. The channels have an intake of larger diameter from the exhaust opening and are oriented at an angle with the intake opening pointing away from the deposition source. A movable seal enables transport of the substrate in open position and processing the substrate in closed position. The seal may be formed as a labyrinth seal to avoid particle generation from a standard contact seal.
摘要:
There is described a disk processing and manufacturing equipment in which the processing chambers are stacked on top of each other and in which the disks move through the system on disk carriers which are adjustable to take disks of varying sizes. The disks enter the system through a load zone and are then installed into disk carriers. They move in the carriers sequentially through processing chambers at one level and then move to the other level in a lift or elevator. At this other level, the disks again move sequentially through the system on that level and then exit at an unload zone.
摘要:
An improved position control means for robotic handling systems; particularly, a sensing system and method for precisely determining the center point of a substrate, such as a semiconductor wafer, relative to a destination point by using a set of multi pixel imaging sensors incorporated into the wafer carrying end effector of the robotic handling system.
摘要:
Backthinning in an area selective manner is applied to imaging sensors 12 for use in electron bombarded devices. A further arrangement results in an array of collimators 51 aligned with pixels 42 or groups of pixels providing improved image contrast of such image sensor. Provision of a thin P-doped layer 52 on the illuminated rear surface provides both a diffusion barrier resulting in improved resolution and a functional shield for reference pixels. A gradient in concentration of P-doped layer 52 optimizes electron collection at the pixel array.
摘要:
Backthinning in an area selective manner is applied to CMOS imaging sensors 12 for use in electron bombarded active pixel array devices. A further arrangement results in an array of collimators 51 aligned with pixels 42 or groups of pixels of an active pixel array providing improved image contrast of such image sensor. Provision of a thin P-doped layer 52 on the illuminated rear surface provides both a diffusion barrier resulting in improved resolution and a functional shield for reference pixels. A gradient in concentration of P-doped layer 52 optimizes electron collection at the pixel array.
摘要:
Backthinning in an area selective manner is applied to imaging sensors 12 for use in electron bombarded devices. A further arrangement results in an array of collimators 51 aligned with pixels 42 or groups of pixels providing improved image contrast of such image sensor. Provision of a thin P-doped layer 52 on the illuminated rear surface provides both a diffusion barrier resulting in improved resolution and a functional shield for reference pixels. A gradient in concentration of P-doped layer 52 optimizes electron collection at the pixel array.
摘要:
A method and apparatus for processing a semiconductor wafer to reduce CD variation feeds back information gathered during inspection of the wafer to a previously visited processing tool and feeds forward information to adjust the next process the wafer will undergo. The inspection and processing are performed at a single processing module without exposing the wafer to ambient atmospheric conditions. Embodiments include removing a wafer from a wafer cassette, and measuring a dimension of a feature on the surface of the wafer, such as the feature's CD using an optical measuring tool. A process, such as an etch process, is then performed on the wafer using a set of process parameter values, such as an etch recipe, selected based on the CD measurement, and the wafer is returned to a cassette. The CD measurements are also linked to photolithography adjustable parameters such as stepper focus and exposure settings. The linked information on focus and exposure is fed back to the previously visited photo cell so the stepper can be adjusted, either automatically or at the user's discretion, to correct the deviation in following lots. In some embodiments, post-etch processing, such as ash stripping, wet cleaning and/or further CD measurement, are performed by the module before the wafer is returned to a cassette. All of the transfer and processing steps performed by the module are performed in a clean environment, thereby increasing yield by avoiding exposing the wafer to the atmosphere and possible contamination between steps. This feedback and feed-forward mechanism improves CD control by adjusting processing parameters for every wafer based on the wafer's measured CD.