Passive waveguide structure with alternating GaInAs/AlInAs layers for mid-infrared optoelectronic devices
    16.
    发明授权
    Passive waveguide structure with alternating GaInAs/AlInAs layers for mid-infrared optoelectronic devices 有权
    用于中红外光电子器件的交替GaInAs / AlInAs层的无源波导结构

    公开(公告)号:US09231368B2

    公开(公告)日:2016-01-05

    申请号:US14628394

    申请日:2015-02-23

    Abstract: Disclosed is a semiconductor optical emitter having an optical mode and a gain section, the emitter comprising a low loss waveguide structure made of two alternating layers of semiconductor materials A and B, having refractive indexes of Na and Nb, respectively, with an effective index No of the optical mode in the low loss waveguide between Na and Nb, wherein No is within a 5% error margin of identical to a refractive index of the gain section and wherein the gain section is butt-jointed with the low loss waveguide, and wherein the size and shape of the optical mode(s) in the low loss waveguide and gain section are within a 10% error margin of equal. Desirably, at least one of the semiconductor materials A and B has a sufficiently large band gap that the passive waveguide structure blocks current under a voltage bias of 15 V.

    Abstract translation: 公开了一种具有光学模式和增益部分的半导体光发射器,发射极包括分别具有折射率为Na和Nb的两个交替层的半导体材料A和B的低损耗波导结构,其有效指数为 在Na和Nb之间的低损耗波导中的光学模式,其中No在与增益部分的折射率相同的5%误差范围内,并且其中增益部分与低损耗波导对接,并且其中 低损耗波导和增益部分中的光学模式的尺寸和形状在相等的10%误差范围内。 理想地,半导体材料A和B中的至少一个具有足够大的带隙,无源波导结构在15V的电压偏压下阻挡电流。

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