MULTIWAVELENGTH QUANTUM CASCADE LASER VIA GROWTH OF DIFFERENT ACTIVE AND PASSIVE CORES
    6.
    发明申请
    MULTIWAVELENGTH QUANTUM CASCADE LASER VIA GROWTH OF DIFFERENT ACTIVE AND PASSIVE CORES 有权
    通过不同的有源和被动光纤的增长,多波长数量级激光器

    公开(公告)号:US20150263488A1

    公开(公告)日:2015-09-17

    申请号:US14725789

    申请日:2015-05-29

    Abstract: Disclosed is a method of forming a laser source capable of producing mid-IR laser radiation comprises growing a first core structure on a substrate, etching away the first core structure in one or more locations, and growing a second core structure on the substrate. At least one of the core structures comprises a quantum cascade gain medium emitting at a frequency within the range from 3-14 μm. Also disclosed is a laser source capable of producing mid-IR laser radiation comprising a quantum-cascade core positioned on a substrate for emitting within the range from 3-14 μm and a second core on the substrate positioned in-plane relative to the first core. The second core is one of a) a passive waveguide core b) a second quantum-cascade core and c) a semiconductor active core region.

    Abstract translation: 公开了一种形成能够产生中红外激光辐射的激光源的方法,包括在衬底上生长第一芯结构,在一个或多个位置蚀刻掉第一芯结构,并在衬底上生长第二芯结构。 核心结构中的至少一个包括以3-14μm范围内的频率发射的量子级联增益介质。 还公开了一种能够产生中红外激光辐射的激光源,其包括定位在衬底上的量子级联核心,用于在3-14μm的范围内发射,并且在基板上相对于第一核心定位在平面上的第二芯体 。 第二芯是a)无源波导芯b)第二量子级联核心和c)半导体活性核心区域。

    PASSIVE WAVEGUIDE STRUCTURE WITH ALTERNATING GAINAS/ALINAS LAYERS FOR MID-INFRARED OPTOELECTRONIC DEVICES
    10.
    发明申请
    PASSIVE WAVEGUIDE STRUCTURE WITH ALTERNATING GAINAS/ALINAS LAYERS FOR MID-INFRARED OPTOELECTRONIC DEVICES 有权
    具有中等红外光电设备的替代增益/亚铝层的被动波形结构

    公开(公告)号:US20150249319A1

    公开(公告)日:2015-09-03

    申请号:US14628394

    申请日:2015-02-23

    Abstract: Disclosed is a semiconductor optical emitter having an optical mode and a gain section, the emitter comprising a low loss waveguide structure made of two alternating layers of semiconductor materials A and B, having refractive indexes of Na and Nb, respectively, with an effective index No of the optical mode in the low loss waveguide between Na and Nb, wherein No is within a 5% error margin of identical to a refractive index of the gain section and wherein the gain section is butt-jointed with the low loss waveguide, and wherein the size and shape of the optical mode(s) in the low loss waveguide and gain section are within a 10% error margin of equal. Desirably, at least one of the semiconductor materials A and B has a sufficiently large band gap that the passive waveguide structure blocks current under a voltage bias of 15 V.

    Abstract translation: 公开了一种具有光学模式和增益部分的半导体光发射器,发射极包括分别具有折射率为Na和Nb的两个交替层的半导体材料A和B的低损耗波导结构,其有效指数为 在Na和Nb之间的低损耗波导中的光学模式,其中No在与增益部分的折射率相同的5%误差范围内,并且其中增益部分与低损耗波导对接,并且其中 低损耗波导和增益部分中的光学模式的尺寸和形状在相等的10%误差范围内。 期望地,半导体材料A和B中的至少一个具有足够大的带隙,无源波导结构在15V的电压偏压下阻挡电流。

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