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公开(公告)号：US20230282446A1
公开(公告)日：2023-09-07
申请号：US17649823
申请日：2022-02-03
Applicant: Tokyo Electron Limited
Inventor： Yohei Yamazawa , Kazuki Moyama , Barton Lane , Merritt Funk
IPC: H01J37/32
CPC classification number: H01J37/3211 , H01J37/32577
Abstract: An antenna includes an inner structure, an outer structure, and a plurality of interconnecting structures coupling the inner structure to the outer structure. The plurality of interconnecting structures is axisymmetric with respect to a center of the antenna. Each interconnecting structure has an azimuthal component of at least 30 degrees.
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公开(公告)号：US20230054430A1
公开(公告)日：2023-02-23
申请号：US17664607
申请日：2022-05-23
Applicant: Tokyo Electron Limited
Inventor： Barton Lane , Yohei Yamazawa , Jason Mehigan , Merritt Funk
IPC: H01J37/32
Abstract: According to an embodiment, an apparatus for a plasma processing system is provided. The apparatus includes an interface, a radiating structure, and conductive offsets. The interface includes a first conductive plate couplable to an RF source, a second conductive plate disposed between the RF source and the first conductive plate, and conductive concentric ring structures disposed between the second conductive plate and a substrate holder. The conductive offsets are arranged to couple the conductive concentric ring structures to the radiating structure.
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公开(公告)号：US11348761B2
公开(公告)日：2022-05-31
申请号：US17012168
申请日：2020-09-04
Applicant: Tokyo Electron Limited
Inventor： John Carroll , Jianping Zhao , Peter Ventzek , Barton Lane
Abstract: A system includes a plasma chamber coupled to a power source, and an impedance matching network coupled between the power source and the plasma chamber, wherein the impedance matching network comprises an L-shaped network and a first adjustable inductor coupled between an input of the plasma chamber and ground, and wherein the impedance matching network is configured such that, in a predetermined frequency range, an impedance of the impedance matching network and the plasma chamber is substantially equal to an impedance of the power source.
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公开(公告)号：US20210249226A1
公开(公告)日：2021-08-12
申请号：US17240733
申请日：2021-04-26
Applicant: Tokyo Electron Limited
Inventor： Jianping Zhao , Peter L.G. Ventzek , Barton Lane
Abstract: A system and method for using plasma to treat a substrate are described. A plasma processing system includes a substrate holder arranged to support a substrate, a first signal generator for coupling a first signal at a first frequency to plasma in the plasma processing system, and a second signal generator for coupling a second signal at a second frequency that is less than the first frequency to the plasma in the plasma processing system. The system further includes a waveform generator configured to dynamically adjust a duty cycle of the second signal while the first signal is coupled to the plasma to spatially and temporally control the plasma density.
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公开(公告)号：US20210082668A1
公开(公告)日：2021-03-18
申请号：US16572696
申请日：2019-09-17
Applicant: Tokyo Electron Limited
Inventor： Peter Ventzek , Barton Lane , Zhiying Chen , Alok Ranjan
Abstract: A plasma processing apparatus includes a processing chamber, a substrate disposed in the processing chamber, and a plurality of electron sources configured to supply electrons to a plasma generated in the processing chamber. Each of the plurality of electron sources includes a first side facing the plasma in the processing chamber. Each of the plurality of electron sources also includes a resonant structure disposed at the first side and configured to be held at a negative direct current bias voltage.
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Patent Agency Ranking
公开(公告)号：US20200013594A1
公开(公告)日：2020-01-09
申请号：US16027123
申请日：2018-07-03
Applicant: Tokyo Electron Limited
Inventor： Barton Lane
IPC: H01J37/32 , H01L21/687
Abstract: Described herein is a technology related to a method for generating a high density plasma ionization on a plasma processing system. Particularly, the high density plasma ionization may include an electron cyclotron resonant (ECR) plasma that is utilized for semiconductor fabrication such as an etching of a substrate. The ECR plasma may be generated by a combination of electromagnetic fields from a resonant structure, radiated microwave energy from a radio frequency (RF) microwave source, and presence of a low-pressure plasma region (e.g., about 1 mTorr or less) on the plasma processing system.
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公开(公告)号：US20160071701A1
公开(公告)日：2016-03-10
申请号：US14838839
申请日：2015-08-28
Applicant: Tokyo Electron Limited
Inventor： Barton Lane
IPC: H01J37/32
CPC classification number: H01J37/32623 , H01J37/32091 , H01J37/32146 , H01J37/32174
Abstract: A processing system is disclosed having a radio frequency (RF) power system coupled to a process chamber via a transmission line. The RF power system is configured to generate RF power at a RF operating frequency. The processing system also includes a resonant structure arranged within the plasma processing chamber that includes at least one resonant substructure configured to resonate according to at least two different resonant modes when at least one resonant frequency associated with at least one of the modes is at or near the RF operating frequency.
Abstract translation: 公开了一种具有经由传输线耦合到处理室的射频（RF）电力系统的处理系统。 RF电力系统被配置为以RF工作频率产生RF功率。 处理系统还包括布置在等离子体处理室内的谐振结构，其包括至少一个谐振子结构，其被配置为当至少一个与至少一个模式相关联的至少一个谐振频率处于或接近时，根据至少两个不同的谐振模式共振 射频工作频率。
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公开(公告)号：US20240380114A1
公开(公告)日：2024-11-14
申请号：US18781542
申请日：2024-07-23
Applicant: Tokyo Electron Limited
Inventor： Chelsea DuBose , Barton Lane , Merritt Funk , Justin Moses
Abstract: According to an embodiment, a radiating structure of a resonating structure used for plasma processing is disclosed. The radiating structure includes a set of first arms and a set of second arms. Each first arm has a first inductance and is coupled to a respective first capacitor and a respective second capacitor of the resonating structure to form a corresponding first resonant circuit operating at a first resonance frequency. Each second arm has a second inductance and is coupled to a respective third capacitor and a respective fourth capacitor of the resonating structure to form a corresponding second resonant circuit operating at a second resonance frequency. In a first mode of operation, the resonating structure operates as a single resonance antenna. In a second mode of operation, the resonating structure operates as a parallel resonance antenna.
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公开(公告)号：US12119207B2
公开(公告)日：2024-10-15
申请号：US17748737
申请日：2022-05-19
Applicant: Tokyo Electron Limited
Inventor： Merritt Funk , Barton Lane
IPC: H01J37/32
CPC classification number: H01J37/3211 , H01J37/32165 , H01J37/32183 , H01J37/32651 , H01J37/32146 , H01J2237/327
Abstract: An apparatus for plasma processing includes a first resonating structure and a second resonating structure. The first resonating structure is coupled to a first RF generator through a first matching circuit. The second resonating structure surrounds the first resonating structure. The second resonating structure is coupled to a second RF generator through a second matching circuit.
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公开(公告)号：US12074390B2
公开(公告)日：2024-08-27
申请号：US17985360
申请日：2022-11-11
Applicant: Tokyo Electron Limited
Inventor： Chelsea DuBose , Barton Lane , Merritt Funk , Justin Moses
Abstract: According to an embodiment, a radiating structure of a resonating structure used for plasma processing is disclosed. The radiating structure includes a set of first arms and a set of second arms. Each first arm has a first inductance and is coupled to a respective first capacitor and a respective second capacitor of the resonating structure to form a corresponding first resonant circuit operating at a first resonance frequency. Each second arm has a second inductance and is coupled to a respective third capacitor and a respective fourth capacitor of the resonating structure to form a corresponding second resonant circuit operating at a second resonance frequency. In a first mode of operation, the resonating structure operates as a single resonance antenna. In a second mode of operation, the resonating structure operates as a parallel resonance antenna.
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