公开(公告)号：US11107663B2

公开(公告)日：2021-08-31

申请号：US16270811

申请日：2019-02-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuki Moyama ,  Kazuya Nagaseki

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065

Abstract: A plasma processing system includes a chamber, a gas supply unit, a gas exhaust unit, a separating unit, a boost unit and an accumulation unit. The chamber is configured to process a target substrate by plasma of a gaseous mixture of a rare gas and a processing gas. The gas supply unit is configured to supply the rare gas and the processing gas into the chamber. The gas exhaust unit is configured to exhaust a gas containing the rare gas from the chamber. The separating unit is configured to separate the rare gas from the gas exhausted by the gas exhaust unit. The boost unit is configured to boost the rare gas separated by the separating unit. The accumulation unit is configured to accumulate the rare gas boosted by the boost unit and supply the accumulated first rare gas to the gas supply unit.

公开(公告)号：US11094507B2

公开(公告)日：2021-08-17

申请号：US16517779

申请日：2019-07-22

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Chelsea DuBose ,  Justin Moses ,  Kazuki Moyama ,  Kazushi Kaneko

IPC: H03F3/68 ,  H01J37/32 ,  H03F3/21 ,  H03F1/02 ,  H03F1/56

Abstract: Embodiments are described herein for power generation systems and methods that use quadrature splitters and combiners to facilitate plasma stability and control. For one embodiment, a quadrature splitter receives an input signal and generates a first and second signals as outputs with the second signal being ninety degrees out of phase with respect to the first signal. Two amplifiers then generate a first and second amplified signals. A quadrature combiner receives the first and second amplified signals and generates a combined amplified signal that represents re-aligned versions of the first and second amplified signals. The power amplifiers can be combined into a system to generate a high power output to a processing chamber. Further, detectors can generate measurements used to monitor and control power generation. The power amplifiers, system, and methods provide significant advantages for high-power generation delivered to process chambers for plasma generation during plasma processing.

公开(公告)号：US20210027992A1

公开(公告)日：2021-01-28

申请号：US16517779

申请日：2019-07-22

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Chelsea DuBose ,  Justin Moses ,  Kazuki Moyama ,  Kazushi Kaneko

IPC: H01J37/32 ,  H03F3/21 ,  H03F1/02 ,  H03F1/56

Abstract: Embodiments are described herein for power generation systems and methods that use quadrature splitters and combiners to facilitate plasma stability and control. For one embodiment, a quadrature splitter receives an input signal and generates a first and second signals as outputs with the second signal being ninety degrees out of phase with respect to the first signal. Two amplifiers then generate a first and second amplified signals. A quadrature combiner receives the first and second amplified signals and generates a combined amplified signal that represents re-aligned versions of the first and second amplified signals. The power amplifiers can be combined into a system to generate a high power output to a processing chamber. Further, detectors can generate measurements used to monitor and control power generation. The power amplifiers, system, and methods provide significant advantages for high-power generation delivered to process chambers for plasma generation during plasma processing.

公开(公告)号：US10896842B2

公开(公告)日：2021-01-19

申请号：US15966506

申请日：2018-04-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Wataru Yoshikawa ,  Kazuki Moyama ,  Nobuyuki Okayama ,  Kenji Sudou ,  Yasuhiro Otsuka

IPC: H01L21/687 ,  C04B37/02 ,  H01L21/67 ,  B23P19/04 ,  F16B11/00

Abstract: A manufacturing method of sample table is provided. The sample table holds a semiconductor wafer on which a plasma process is to be performed, and the manufacturing method includes: preparing an adsorption plate that has a contact surface on which a lapping process has been performed and surface-contacting the semiconductor wafer, and that adsorbs the semiconductor wafer; and preparing a supporting substrate which has a recess surface to which a noncontact surface of the adsorption plate is adhered, wherein a difference between a depth of an approximate center portion of the recess surface and a depth of a distant portion spaced apart from the approximate center portion is larger than a difference between a thickness of the adsorption plate at a portion contacting the approximate center portion and a thickness of the adsorption plate at a portion contacting the distant portion.

公开(公告)号：US20190228950A1

公开(公告)日：2019-07-25

申请号：US15880435

申请日：2018-01-25

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Megan Doppel ,  Kazuki Moyama ,  Chelsea DuBose ,  Justin Moses

IPC: H01J37/32 ,  H01L21/3065

Abstract: Embodiments of method and system for controlling plasma performance are described. In an embodiment a method may include supplying power at a first set of power parameters to a plasma chamber. Additionally, the method may include forming plasma within the plasma chamber using the first set of power parameters. The method may also include measuring power coupling to the plasma at the first set of power parameters. Also, the method may include supplying power at a second set of power parameters to the plasma chamber. The method may additionally include measuring power coupling to the plasma at the second set of power parameters to the plasma. The method may also include adjusting the first set of power parameters based, at least in part, on the measuring of the power coupling at the second set of power parameters.

公开(公告)号：US20150075566A1

公开(公告)日：2015-03-19

申请号：US14387654

申请日：2012-11-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takehiro Tanikawa ,  Kazuki Moyama

IPC: H01L21/683 ,  H01J37/32

CPC classification number: H01L21/6831 ,  C23C16/4401 ,  H01J37/32192 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/32862 ,  H01L21/32137 ,  Y10T29/49998

Abstract: A method of controlling adherence of microparticles to a substrate to be processed includes applying voltage to an electrostatic chuck configured to electrostatically attract the substrate to be processed in a processing container before the substrate to be processed is carried into the processing container; and, after the applying of voltage to the electrostatic chuck, carrying the substrate to be processed into the processing container. Further, in the applying of voltage to the electrostatic chuck, the voltage is applied to the electrostatic chuck to reduce a potential difference between a focus ring and the substrate to be processed, the focus ring being provided to surround the electrostatic chuck.

Abstract translation: 控制微粒对待处理基板的粘附的方法包括：在待处理基板被携带到处理容器之前，将电压施加到静电卡盘，静电卡盘构造成在加工容器中静电吸引待处理的基板; 并且在向静电卡盘施加电压之后，将要处理的基板运送到处理容器中。 此外，在向静电卡盘施加电压时，向静电卡盘施加电压以减小聚焦环和待处理基板之间的电位差，聚焦环设置成围绕静电卡盘。

公开(公告)号：US11721524B2

公开(公告)日：2023-08-08

申请号：US17374857

申请日：2021-07-13

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Chelsea Dubose ,  Justin Moses ,  Kazuki Moyama ,  Kazushi Kaneko

IPC: H03F3/68 ,  H01J37/32 ,  H03F3/21 ,  H03F1/02 ,  H03F1/56

CPC classification number: H01J37/32183 ,  H03F1/0288 ,  H03F1/56 ,  H03F3/21 ,  H03F2200/222 ,  H03F2200/387 ,  H03F2200/451

Abstract: Embodiments are described herein for power generation systems and methods that use quadrature splitters and combiners to facilitate plasma stability and control. For one embodiment, a quadrature splitter receives an input signal and generates a first and second signals as outputs with the second signal being ninety degrees out of phase with respect to the first signal. Two amplifiers then generate a first and second amplified signals. A quadrature combiner receives the first and second amplified signals and generates a combined amplified signal that represents re-aligned versions of the first and second amplified signals. The power amplifiers can be combined into a system to generate a high power output to a processing chamber. Further, detectors can generate measurements used to monitor and control power generation. The power amplifiers, system, and methods provide significant advantages for high-power generation delivered to process chambers for plasma generation during plasma processing.

公开(公告)号：US11613432B2

公开(公告)日：2023-03-28

申请号：US17186932

申请日：2021-02-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuki Moyama ,  Kazuya Nagaseki ,  Toshiya Matsuda

IPC: H01L21/67 ,  B65G47/90 ,  B23P6/00 ,  G05B23/02

Abstract: A method includes estimating a replacement time of a consumable part of a processing device, specifying a timing after substrate processing of the processing device is completed in a period before the replacement time as a replaceable timing of the consumable part, estimating a movement time period required for the part transporting device to move to a position of the processing device requiring the replacement, and estimating a preparation time period required for preparation until the part transporting device moved to the position of the processing device requiring the replacement becomes a state in which the consumable part is replaceable. The method further includes transmitting a replacement instruction to the part transporting device at a timing before a timing that is earlier than the replaceable timing by a total time of the movement time period and the preparation time period, and instructing the replacement of the consumable part.

公开(公告)号：US10510512B2

公开(公告)日：2019-12-17

申请号：US15880435

申请日：2018-01-25

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Megan Doppel ,  Kazuki Moyama ,  Chelsea DuBose ,  Justin Moses

IPC: H01J37/32 ,  H01L21/3065

Abstract: Embodiments of method and system for controlling plasma performance are described. In an embodiment a method may include supplying power at a first set of power parameters to a plasma chamber. Additionally, the method may include forming plasma within the plasma chamber using the first set of power parameters. The method may also include measuring power coupling to the plasma at the first set of power parameters. Also, the method may include supplying power at a second set of power parameters to the plasma chamber. The method may additionally include measuring power coupling to the plasma at the second set of power parameters to the plasma. The method may also include adjusting the first set of power parameters based, at least in part, on the measuring of the power coupling at the second set of power parameters.

公开(公告)号：US20140312767A1

公开(公告)日：2014-10-23

申请号：US14357155

申请日：2012-11-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Caizhong Tian ,  Naoki Matsumoto ,  Koji Koyama ,  Naoki Mihara ,  Kazuki Takahashi ,  Jun Yoshikawa ,  Kazuki Moyama ,  Takehiro Tanikawa

IPC: H01J37/32

CPC classification number: H01J37/32238

Abstract: A dielectric window for a plasma treatment device for a plasma treatment device that uses microwaves as a plasma source. The dielectric window is circular-plate-shaped and allows microwaves to propagate. The dielectric window has a recess that has an opening on the lower-surface side and that indents in the plate thickness direction of the dielectric window, and is provided to the lower surface at which plasma is generated when the dielectric window is provided to the plasma treatment device. The recess has a bottom surface extending in the direction perpendicular to the plate thickness direction, and a side surface extending in the plate thickness direction from the circumferential edge of the bottom surface toward the opening of the recess. In addition, an inclined surface extends at an incline relative to the plate thickness direction from the opening-side circumferential edge of the side surface toward the opening of the recess.

Abstract translation: 一种用于等离子体处理装置的等离子体处理装置的电介质窗，其使用微波作为等离子体源。 电介质窗是圆板形的，允许微波传播。 电介质窗口具有凹部，该凹部在下表面侧具有开口，并且在电介质窗口的板厚度方向上具有凹口，并且当将电介质窗设置到等离子体时设置在产生等离子体的下表面 治疗装置。 所述凹部具有沿垂直于所述板厚方向的方向延伸的底面，以及从所述底面的周缘朝向所述凹部的开口在所述板厚方向上延伸的侧面。 此外，倾斜面从侧面的开口侧周缘朝向凹部的开口以相对于板厚方向的倾斜面延伸。