公开(公告)号：US09508574B2

公开(公告)日：2016-11-29

申请号：US13956507

申请日：2013-08-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroshi Marumoto ,  Koji Takayanagi ,  Kenji Adachi

IPC: B01D19/00 ,  H01L21/67 ,  B01D36/00

CPC classification number: H01L21/6715 ,  B01D19/0031 ,  B01D19/0036 ,  B01D36/001 ,  H01L21/67017

Abstract: According to an embodiment of the present disclosure, a process liquid supply apparatus operating method is provided. The method includes filling a filter unit with a process liquid from an upstream side of the filter unit to a downstream side of the filter unit after newly mounting or replacing the filter unit and repeating a depressurization filtering process and a pressurization filtering process for a predetermined number of times. The depressurization filtering process depressurizes the process liquid in the downstream side of the filter unit and thereby allows the process liquid to permeate through the filter unit. The pressurization filtering process pressurizes the process liquid from the upstream side of the filter unit and thereby allows the process liquid to permeate through the filter unit.

Abstract translation: 根据本公开的实施例，提供了一种处理液体供应装置操作方法。 该方法包括在新安装或更换过滤器单元之后，将过滤液从过滤器单元的上游侧填充到过滤器单元的下游侧，并重复进行预定数量的减压过滤和加压过滤处理 的时代。 减压过滤处理对过滤器单元的下游侧的处理液进行减压，从而允许处理液体透过过滤器单元。 加压过滤过程从过滤器单元的上游侧对工艺液体进行加压，从而允许处理液体渗透过滤单元。

公开(公告)号：US11862485B2

公开(公告)日：2024-01-02

申请号：US17471457

申请日：2021-09-10

Applicant: Tokyo Electron Limited

Inventor： Satoshi Shimmura ,  Kohei Kawakami ,  Hiroichi Inada ,  Koji Takayanagi

IPC: H01L21/67 ,  H01L21/02

CPC classification number: H01L21/67051 ,  H01L21/02307 ,  H01L21/6715

Abstract: A nozzle standby device configured to allow a nozzle to stand by therein includes a nozzle accommodation unit, having an inner circumferential surface formed to surround a leading end portion of the nozzle, provided with a drain opening facing a discharge opening of the nozzle; and a solvent discharge opening opened within the nozzle accommodation unit. The nozzle accommodation unit has a diameter reducing portion having a first and a second inner circumferential surfaces having different angles with respect to a center line of the nozzle accommodation unit such that an inner diameter of the diameter reducing portion becomes smaller toward the drain opening. An intersection point of two straight lines extending along two opposite portions of the first inner circumferential surface is located above the discharge opening of the nozzle when the leading end portion of the nozzle is placed in the diameter reducing portion.

公开(公告)号：US09947534B2

公开(公告)日：2018-04-17

申请号：US14813820

申请日：2015-07-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kousuke Yoshihara ,  Koji Takayanagi ,  Shinichi Hatakeyama ,  Kohei Kawakami

IPC: B05D3/12 ,  H01L21/033 ,  B05D1/00 ,  B05C11/02 ,  H01L21/67 ,  G03F7/16 ,  H01L21/027 ,  H01L51/00 ,  G06F19/00

CPC classification number: H01L21/0337 ,  B05C11/023 ,  B05D1/005 ,  G03F7/162 ,  G06F19/00 ,  H01L21/0271 ,  H01L21/6715 ,  H01L51/0003 ,  H01L2224/03418

Abstract: A coating treatment apparatus supplying a coating solution to a front surface of a rotated substrate and diffusing the supplied coating solution to an outer periphery side of the substrate to thereby apply the coating solution on the front surface of the substrate includes: a substrate holding part holding a substrate; a rotation part rotating the substrate held on the substrate holding part; a supply part supplying a coating solution to a front surface of the substrate held on the substrate holding part; and an airflow control plate provided at a predetermined position above the substrate held on the substrate holding part for locally changing an airflow above the substrate rotated by the rotation part at an arbitrary position.

公开(公告)号：US09732910B2

公开(公告)日：2017-08-15

申请号：US14497930

申请日：2014-09-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koji Takayanagi ,  Kousuke Yoshihara ,  Yuichi Terashita ,  Toshinobu Furusho ,  Takashi Sasa

IPC: F17D3/01

CPC classification number: F17D3/01 ,  F17C1/00 ,  Y10T137/0318 ,  Y10T137/794

Abstract: A processing-liquid supply apparatus includes a source, a discharge device, a supply channel connecting the source and discharge device, a filter device positioned in the channel to form first side having the source and second side having the discharge device, a pump device positioned in the channel, and a control device which controls suction and discharge by the pump device. The control device controls the pump device such that the liquid is discharged from the discharge device, that remaining of the liquid on the second side is suctioned to be returned to the first side and that the remaining of the liquid returned to the first side flows from the first toward second side together with refill of the liquid from the source, and the control device is set such that return amount of the liquid to the filter device is equal to or greater than amount of the discharge.

公开(公告)号：US20150092167A1

公开(公告)日：2015-04-02

申请号：US14485914

申请日：2014-09-15

Applicant: Tokyo Electron Limited

Inventor： Yuichi Terashita ,  Kousuke Yoshihara ,  Koji Takayanagi ,  Toshinobu Furusho ,  Takashi Sasa

IPC: G03F7/20

CPC classification number: H01L21/67017

Abstract: Disclosed is a processing liquid supplying apparatus. The apparatus includes: a processing liquid supply source configured to supply a processing liquid for processing a substrate to be processed; an ejection unit configured to eject the processing liquid to the substrate to be processed; a filter device configured to remove foreign matters in the processing liquid; a supply pump and an ejection pump which are provided in the supply path at a primary side and a secondary side of the filter device, respectively; and a control unit configured to output a control signal to decompress and degas the processing liquid supplied from the processing liquid supply source by using one of the supply pump and the ejection pump, and subsequently, pass the degassed processing liquid through the filter device beginning from the primary side to the secondary side of the filter device by using the supply pump and the ejection pump.

Abstract translation: 公开了一种处理液供给装置。 该装置包括：处理液供给源，被配置为提供用于处理待处理基板的处理液; 喷射单元，被配置为将处理液喷射到待处理的基板; 被配置为去除处理液中的异物的过滤装置; 供给泵和喷射泵，其分别设置在所述供给路径中的所述过滤装置的初级侧和次级侧; 以及控制单元，其被配置为输出控制信号，以通过使用所述供给泵和所述喷射泵中的一个来对从所述处理液体供给源供给的处理液进行解压缩和脱气，并且随后将所述脱气处理液通过所述过滤装置，从 通过使用供应泵和排出泵将过滤装置的次级侧的初级侧。

公开(公告)号：US20200227286A1

公开(公告)日：2020-07-16

申请号：US16052875

申请日：2018-08-02

Applicant: Tokyo Electron Limited

Inventor： Yuichi Terashita ,  Kousuke Yoshihara ,  Koji Takayanagi ,  Toshinobu Furusho ,  Takashi Sasa

IPC: H01L21/67

Abstract: Disclosed is a processing liquid supplying apparatus. The apparatus includes: a processing liquid supply source configured to supply a processing liquid for processing a substrate to be processed; an ejection unit configured to eject the processing liquid to the substrate to be processed; a filter device configured to remove foreign matters in the processing liquid; a supply pump and an ejection pump which are provided in the supply path at a primary side and a secondary side of the filter device, respectively; and a control unit configured to output a control signal to decompress and degas the processing liquid supplied from the processing liquid supply source by using one of the supply pump and the ejection pump, and subsequently, pass the degassed processing liquid through the filter device beginning from the primary side to the secondary side of the filter device by using the supply pump and the ejection pump.

公开(公告)号：US09991140B2

公开(公告)日：2018-06-05

申请号：US14816550

申请日：2015-08-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masato Mizuta ,  Koji Takayanagi

IPC: F27B5/02 ,  H01L21/67 ,  H01L21/687 ,  F27B17/00

CPC classification number: H01L21/67103 ,  F27B17/0025 ,  H01L21/67017 ,  H01L21/68742

Abstract: A substrate heating device includes: heating modules each having a processing vessel within which a heating plate is disposed, an gas inlet port for introducing a purge gas into a processing atmosphere, and an exhaust port for exhausting the processing atmosphere; individual exhaust paths each connected to the exhaust port of the heating modules; a common exhaust path connected to downstream ends of the individual exhaust paths of the heating modules; a branch path branched from the individual exhaust paths and opened to the outside of the processing vessel; and an exhaust flow rate adjusting unit configured to adjust a flow rate ratio of an exhaust flow rate of a gas exhausted from the exhaust port into the common exhaust path and an introduction flow rate of a gas introduced from the outside of the processing vessel into the common exhaust path through the branch path.

公开(公告)号：US09165763B2

公开(公告)日：2015-10-20

申请号：US13934282

申请日：2013-07-03

Applicant: Tokyo Electron Limited

Inventor： Katsunori Ichino ,  Koji Takayanagi ,  Tomohiro Noda

IPC: B05D3/12 ,  H01L21/02 ,  G03F7/16 ,  H01L21/67 ,  B05D1/00

CPC classification number: H01L21/02282 ,  B05D1/005 ,  G03F7/162 ,  H01L21/6715

Abstract: A substrate is rotated at a first rotation number (first step). The rotation of the substrate is decelerated to 1500 rpm that is a second rotation number and the substrate is rotated at the second rotation number for 0.5 seconds (second step). The rotation of the substrate is further decelerated to a third rotation number and the substrate is rotated at the third rotation number (third step). The rotation of the substrate is accelerated to a fourth rotation number and the substrate is rotated at the fourth rotation number (fourth step). A resist solution is continuously supplied to a center portion of the substrate from a middle of the first step to a middle of the third step.

Abstract translation: 基板以第一转数旋转（第一步）。 基板的旋转减速到1500rpm，转数为第二转数，基板以第二转数旋转0.5秒（第二步）。 基板的旋转进一步减速至第三转数，基板以第三转数旋转（第三步）。 基板的旋转被加速到第四转数，并且基板以第四转数旋转（第四步）。 从第一步骤的中间到第三步骤的中间，将抗蚀剂溶液连续地供给到基板的中心部分。

公开(公告)号：US20150090340A1

公开(公告)日：2015-04-02

申请号：US14497930

申请日：2014-09-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koji Takayanagi ,  Kousuke Yoshihara ,  Yuichi Terashita ,  Toshinobu Furusho ,  Takashi Sasa

IPC: F17D3/01

CPC classification number: F17D3/01 ,  F17C1/00 ,  Y10T137/0318 ,  Y10T137/794

Abstract: A processing-liquid supply apparatus includes a source, a discharge device, a supply channel connecting the source and discharge device, a filter device positioned in the channel to form first side having the source and second side having the discharge device, a pump device positioned in the channel, and a control device which controls suction and discharge by the pump device. The control device controls the pump device such that the liquid is discharged from the discharge device, that remaining of the liquid on the second side is suctioned to be returned to the first side and that the remaining of the liquid returned to the first side flows from the first toward second side together with refill of the liquid from the source, and the control device is set such that return amount of the liquid to the filter device is equal to or greater than amount of the discharge.

Abstract translation: 一种处理液供给装置，包括源，排出装置，连接源放出装置的供给路，位于通道内的过滤装置，形成具有源的第一侧，具有排出装置的第二侧， 在通道中，以及控制装置，其通过泵装置控制吸入和排出。 控制装置控制泵装置使得液体从排出装置排出，第二侧的液体的剩余部分被抽吸回到第一侧，并且剩余的返回到第一侧的液体从 首先朝向第二侧，同时从源的液体的再填充，并且控制装置被设定为使得到过滤装置的液体的返回量等于或大于排出量。

公开(公告)号：US08851011B2

公开(公告)日：2014-10-07

申请号：US13841880

申请日：2013-03-15

Applicant: Tokyo Electron Limited

Inventor： Kousuke Yoshihara ,  Tomohiro Iseki ,  Koji Takayanagi

IPC: B05B13/04 ,  B05C5/00 ,  B05C11/10 ,  B05D1/00 ,  H01L21/67 ,  G03F7/16 ,  H01L21/02

CPC classification number: H01L21/02104 ,  B05D1/005 ,  G03F7/162 ,  H01L21/02282 ,  H01L21/6715

Abstract: In a coating step, a substrate is rotated at a high speed, and in that state a resist solution is discharged from a first nozzle to a central portion of the substrate to apply the resist solution over the substrate. Subsequently, in a flattening step, the rotation of the substrate is decelerated and the substrate is rotated at a low speed to flatten the resist solution on the substrate. In this event, the discharge of the resist solution by the first nozzle in the coating step is performed until a middle of the flattening step, and when the discharge of the resist solution is finished in the flattening step, the first nozzle is moved to move a discharge position of the resist solution from the central portion of the substrate. According to the present invention, the resist solution can be applied uniformly within the substrate.

Abstract translation: 在涂布步骤中，基板高速旋转，并且在该状态下，将抗蚀剂溶液从第一喷嘴排出到基板的中心部分，以将抗蚀剂溶液涂覆在基板上。 随后，在平坦化步骤中，基板的旋转减速，并且基板以低速旋转以使基板上的抗蚀剂溶液平坦化。 在这种情况下，在涂布步骤中，通过第一喷嘴对抗蚀剂溶液的排出进行到平坦化阶段的中间，并且当在平坦化步骤中完成抗蚀剂溶液的排出时，第一喷嘴移动 抗蚀剂溶液从衬底的中心部分的放电位置。 根据本发明，能够将抗蚀剂溶液均匀地涂布在基板内。