公开(公告)号：US20250079138A1

公开(公告)日：2025-03-06

申请号：US18925387

申请日：2024-10-24

Applicant: Tokyo Electron Limited

Inventor： Takashi ARAMAKI ,  Lifu LI ,  Nobutaka SASAKI ,  Toshiki AKAMA ,  Shusei KATO ,  Gyeong min PARK ,  Wataru SHIMIZU ,  Ryota KOITABASHI

IPC: H01J37/32

Abstract: A substrate processing system includes a plasma processing apparatus, a decompression transferrer coupled to the plasma processing apparatus, and control circuitry that controls a transfer robot to load an edge ring into a process chamber and to transfer the edge ring to a lift assembly, controls the lift assembly to lower the edge ring onto a ring support surface, controls an electrostatic chuck to electrostatically clamp the edge ring onto the ring support surface, and controls a plasma generator to generate plasma in the process chamber and stabilize the electrostatically clamping of the edge ring onto the electrostatic chuck before performing plasma processing on a product substrate, the stabilizing includes controlling a power source to apply pulsed direct current voltage to the substrate support, including applying a first bias voltage and applying a second bias voltage higher than the first bias voltage after applying the first bias voltage.

公开(公告)号：US20230207276A1

公开(公告)日：2023-06-29

申请号：US18086647

申请日：2022-12-22

Applicant: Tokyo Electron Limited

Inventor： Kota SHIHOMMATSU ,  Takashi ARAMAKI ,  Lifu LI

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32183 ,  H01J37/32715 ,  H01J37/32091 ,  H01J2237/334

Abstract: There is provided a plasma processing apparatus comprising: a plasma processing chamber having a substrate support configured to support a substrate; a shower head having a plurality of gas inlets configured to introduce a gas into respective regions in the plasma processing chamber; a gas supply configured to supply a gas to the plurality of gas inlets; a plasma generator configured to generate a plasma of the gas; and a controller configured to control at least the gas supply. The gas supply includes: a gas unit configured to supply a common gas to the plurality of gas inlets; and an injection unit configured to supply an injection gas to the selected gas inlet among the plurality of gas inlets, and the controller controls the injection unit so that two or more types of injection gases are supplied to two different ones of the plurality of gas inlets.

公开(公告)号：US20220319815A1

公开(公告)日：2022-10-06

申请号：US17708600

申请日：2022-03-30

Applicant: Tokyo Electron Limited

Inventor： Lifu LI ,  Takaki KOBUNE ,  Hiroshi TSUJIMOTO

IPC: H01J37/32

Abstract: An upper electrode assembly used in a plasma processing apparatus is provided. The upper electrode assembly comprises: an electrode plate; a metal plate; and a heat transfer sheet disposed between the electrode plate and the metal plate and having a vertically oriented portion. The vertically oriented portion has a plurality of vertically oriented graphene structures oriented along a vertical direction.

公开(公告)号：US20200273712A1

公开(公告)日：2020-08-27

申请号：US16801583

申请日：2020-02-26

Applicant: Tokyo Electron Limited

Inventor： Atsushi UTO ,  Yoshimitsu KON ,  Lifu LI ,  Yuji NAGAI

IPC: H01L21/3065 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32 ,  H01L21/311 ,  H01L21/02

Abstract: A deposition processing method includes a step of depositing deposits onto a substrate using a first plasma generated in a processing condition of depositing the deposits onto the substrate, which is basically a first processing condition, and a preceding step performed before the step of depositing the deposits onto the substrate, wherein, within the step of depositing the deposits transited from the preceding step, the processing condition is controlled so as to deposit less deposits than that in the first processing condition until a state of the first plasma is stabilized.