公开(公告)号：US20180033656A1

公开(公告)日：2018-02-01

申请号：US15657356

申请日：2017-07-24

Applicant: Tokyo Electron Limited

Inventor： Tsuyoshi Fukushima ,  Kazuhiro Aiura ,  Norihiro Ito

IPC: H01L21/67

CPC classification number: H01L21/67051 ,  H01L21/6715

Abstract: After a discharge of a processing liquid is stopped, a position of a liquid surface within a nozzle can be observed. A substrate processing apparatus includes a substrate holding mechanism and the nozzle. The substrate holding mechanism is configured to hold a substrate. The nozzle is configured to supply the processing liquid to the substrate. The nozzle includes a pipe member and an observation window. The pipe member has a horizontal part and a downward part extended downwards from the horizontal part, and is configured to discharge the processing liquid from a tip end of the downward part. The observation window is provided at the horizontal part of the pipe member.

公开(公告)号：US20140261172A1

公开(公告)日：2014-09-18

申请号：US14200668

申请日：2014-03-07

Applicant: Tokyo Electron Limited

Inventor： Norihiro Ito

IPC: B05C11/10 ,  G01L13/00

CPC classification number: H01L21/67051 ,  B05C11/1039 ,  H01L21/30 ,  H01L21/67178 ,  H01L21/67253

Abstract: A substrate liquid processing apparatus includes a substrate holding unit configured to hold and rotate a substrate; a processing liquid nozzle configured to supply a processing liquid to the substrate; a cylindrical liquid receiving cup configured to receive and recover the processing liquid scattered from the substrate; a housing configured to accommodate the substrate holding unit and the liquid receiving cup; a cup exhaust path connected to the liquid receiving cup to exhaust atmosphere inside the liquid receiving cup; a cup exhaust path pressure sensor configured to detect pressure in the cup exhaust path; a housing pressure sensor configured to detect pressure in the housing outside the liquid receiving cup; and a control unit configured to alert when a difference between a value detected by the housing pressure sensor and a value detected by the cup exhaust path pressure sensor is a predetermined determination reference value or less.

Abstract translation: 基板液体处理装置包括：基板保持单元，被配置为保持和旋转基板; 处理液喷嘴，其构造成将处理液体供给到所述基板; 圆柱形液体容纳杯，被配置为接收和回收从所述基底散射的处理液体; 壳体，其构造成容纳所述基板保持单元和所述液体接收杯; 连接到液体接收杯以排出液体接收杯内的气体的杯排气路径; 杯排气路压力传感器，被配置为检测杯排气路径中的压力; 壳体压力传感器，被配置为检测所述壳体外部的液体接收杯的压力; 以及控制单元，其被配置为当壳体压力传感器检测到的值与杯排气路径压力传感器检测到的值之间的差是预定的确定基准值时警告。

公开(公告)号：US20180221925A1

公开(公告)日：2018-08-09

申请号：US15747921

申请日：2016-07-28

Applicant: Tokyo Electron Limited

Inventor： Norihiro Ito ,  Jiro Higashijima ,  Nobuhiro Ogata ,  Takahisa Otsuka ,  Yuichi Douki ,  Yusuke Hashimoto ,  Kazuhiro Aiura ,  Daisuke Goto

IPC: B08B17/02 ,  H01L21/67 ,  H01L21/687 ,  H01L21/02 ,  B08B3/02 ,  B08B3/08

CPC classification number: B08B17/025 ,  B08B3/02 ,  B08B3/022 ,  B08B3/08 ,  B08B2203/0229 ,  B08B2203/0264 ,  H01L21/02052 ,  H01L21/67051 ,  H01L21/68764

Abstract: A substrate processing apparatus includes a stationary cup body 51 provided to surround a substrate holding unit 31 and configured to receive a processing liquid or mist of the processing liquid discharged onto a substrate, the stationary cup body not being moved relatively with respect to a processing vessel; a mist guard 80; and a guard elevating mechanism 84 configured to elevate the mist guard. Here, the mist guard is provided at an outside of the stationary cup body to surround the stationary cup body and configured to block a liquid scattered outwards beyond a space above the stationary cup body. Further, the mist guard includes a cylindrical portion 81 of a cylindrical shape and a protruding portion 82 protruded from an upper portion of the cylindrical portion toward an inside of the cylindrical portion.

公开(公告)号：US20180130677A1

公开(公告)日：2018-05-10

申请号：US15805311

申请日：2017-11-07

Applicant: Tokyo Electron Limited

Inventor： Terufumi Wakiyama ,  Norihiro Ito

IPC: H01L21/67 ,  H01L21/687 ,  B08B3/08

CPC classification number: H01L21/67051 ,  B08B3/08 ,  H01L21/67173 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68785 ,  H01L21/68792

Abstract: A substrate processing apparatus can suppress a rear surface of a substrate from being contaminated when moving the substrate and a liquid supply unit upwards. When a lift pin 22 and a liquid supply pipe 40 are moved from a neighboring position where they are adjacent to a holding plate 30 to a distanced position, an elevating device 60 raises only the lift pin 22 for a time during which the first lifting member 61 is moved up to a preset position while being connected to the lift pin 22. The elevating device 60 raises the lift pin 22 and the liquid supply pipe 40 for a time during which the first lifting member 61 is raised from the preset position to the distanced position.

公开(公告)号：US09852933B2

公开(公告)日：2017-12-26

申请号：US14700342

申请日：2015-04-30

Applicant: Tokyo Electron Limited

Inventor： Norihiro Ito

IPC: H01L21/67 ,  H01L21/306 ,  H01L21/687

CPC classification number: H01L21/67253 ,  H01L21/30604 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68764

Abstract: A heating processing performed on an outer peripheral portion of a substrate can be optimized. A substrate processing apparatus includes a holding unit configured to hold a substrate; a rotation unit configured to rotate the holding unit; a processing liquid supply unit configured to supply a processing liquid onto the substrate held in the holding unit; and a heating device configured to heat an outer peripheral portion of the substrate held in the holding unit. Further, the heating device includes a discharge flow path through which a gas is discharged toward the outer peripheral portion of the substrate held in the holding unit; a branch flow path through which a gas is discharged toward a region other than the substrate held in the holding unit; and a heating unit configured to heat the discharge flow path and the branch flow path.

公开(公告)号：US09478445B2

公开(公告)日：2016-10-25

申请号：US14200668

申请日：2014-03-07

Applicant: Tokyo Electron Limited

Inventor： Norihiro Ito

IPC: B05C11/10 ,  H01L21/67 ,  H01L21/30

CPC classification number: H01L21/67051 ,  B05C11/1039 ,  H01L21/30 ,  H01L21/67178 ,  H01L21/67253

Abstract: A substrate liquid processing apparatus includes a substrate holding unit configured to hold and rotate a substrate; a processing liquid nozzle configured to supply a processing liquid to the substrate; a cylindrical liquid receiving cup configured to receive and recover the processing liquid scattered from the substrate; a housing configured to accommodate the substrate holding unit and the liquid receiving cup; a cup exhaust path connected to the liquid receiving cup to exhaust atmosphere inside the liquid receiving cup; a cup exhaust path pressure sensor configured to detect pressure in the cup exhaust path; a housing pressure sensor configured to detect pressure in the housing outside the liquid receiving cup; and a control unit configured to alert when a difference between a value detected by the housing pressure sensor and a value detected by the cup exhaust path pressure sensor is a predetermined determination reference value or less.

Abstract translation: 基板液体处理装置包括：基板保持单元，被配置为保持和旋转基板; 处理液喷嘴，其构造成将处理液体供给到所述基板; 圆柱形液体容纳杯，被配置为接收和回收从所述基底散射的处理液体; 壳体，其构造成容纳所述基板保持单元和所述液体接收杯; 连接到液体接收杯以排出液体接收杯内的气体的杯排气路径; 杯排气路压力传感器，被配置为检测杯排气路径中的压力; 壳体压力传感器，被配置为检测所述壳体外部的液体接收杯的压力; 以及控制单元，其被配置为当壳体压力传感器检测到的值与杯排气路径压力传感器检测到的值之间的差是预定的确定基准值时警告。

公开(公告)号：US20150318192A1

公开(公告)日：2015-11-05

申请号：US14700342

申请日：2015-04-30

Applicant: Tokyo Electron Limited

Inventor： Norihiro Ito

IPC: H01L21/67 ,  H01L21/306 ,  H01L21/687

CPC classification number: H01L21/67253 ,  H01L21/30604 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68764

Abstract: A heating processing performed on an outer peripheral portion of a substrate can be optimized. A substrate processing apparatus includes a holding unit configured to hold a substrate; a rotation unit configured to rotate the holding unit; a processing liquid supply unit configured to supply a processing liquid onto the substrate held in the holding unit; and a heating device configured to heat an outer peripheral portion of the substrate held in the holding unit. Further, the heating device includes a discharge flow path through which a gas is discharged toward the outer peripheral portion of the substrate held in the holding unit; a branch flow path through which a gas is discharged toward a region other than the substrate held in the holding unit; and a heating unit configured to heat the discharge flow path and the branch flow path.

Abstract translation: 能够优化在基板的外周部进行的加热处理。 基板处理装置包括：保持单元，被配置为保持基板; 旋转单元，其构造成使所述保持单元旋转; 处理液供给单元，其将处理液供给到保持在所述保持单元中的所述基板上; 以及加热装置，其构造成加热保持在所述保持单元中的所述基板的外周部。 此外，加热装置包括排出流路，通过该排出流路朝向保持在保持单元中的基板的外周部排出气体; 分支流路，气体朝向保持在保持单元中的基板以外的区域排出的流路; 以及加热单元，其构造成加热排出流路和分支流路。

公开(公告)号：US11024518B2

公开(公告)日：2021-06-01

申请号：US15747921

申请日：2016-07-28

Applicant: Tokyo Electron Limited

Inventor： Norihiro Ito ,  Jiro Higashijima ,  Nobuhiro Ogata ,  Takahisa Otsuka ,  Yuichi Douki ,  Yusuke Hashimoto ,  Kazuhiro Aiura ,  Daisuke Goto

IPC: B08B3/02 ,  H01L21/67 ,  B08B17/02 ,  H01L21/687 ,  B08B3/08 ,  H01L21/02

Abstract: A substrate processing apparatus includes a stationary cup body 51 provided to surround a substrate holding unit 31 and configured to receive a processing liquid or mist of the processing liquid discharged onto a substrate, the stationary cup body not being moved relatively with respect to a processing vessel; a mist guard 80; and a guard elevating mechanism 84 configured to elevate the mist guard. Here, the mist guard is provided at an outside of the stationary cup body to surround the stationary cup body and configured to block a liquid scattered outwards beyond a space above the stationary cup body. Further, the mist guard includes a cylindrical portion 81 of a cylindrical shape and a protruding portion 82 protruded from an upper portion of the cylindrical portion toward an inside of the cylindrical portion.

公开(公告)号：US20160148827A1

公开(公告)日：2016-05-26

申请号：US14943138

申请日：2015-11-17

Applicant: Tokyo Electron Limited

Inventor： Terufumi Wakiyama ,  Norihiro Ito ,  Jiro Higashijima ,  Satoshi Biwa

IPC: H01L21/683 ,  H01L21/67

CPC classification number: H01L21/68728 ,  H01L21/67051

Abstract: A substrate processing system includes: a holding plate provided to be rotatable around a vertical axis; a substrate holding member provided on the holding plate to hold a substrate; a rotary drive unit that rotates the substrate in a predetermined direction; and a processing fluid supply unit that supplies a processing liquid to the substrate. The substrate holding member includes a first side portion provided at a position facing the substrate and a second side portion and a third side portion that are adjacent to the first side portion. The first side portion includes a gripping portion configured to grip an end surface of the substrate. The second side portion forms a pointed end portion with the first side portion, and includes a liquid flow guide portion that guides the processing liquid to a lower side of the substrate after the processing liquid is supplied to the substrate.

Abstract translation: 一种基板处理系统，包括：保持板，设置成可围绕垂直轴线旋转; 衬底保持构件，设置在所述保持板上以保持衬底; 旋转驱动单元，其使基板沿预定方向旋转; 以及将处理液供给到基板的处理液供给单元。 衬底保持构件包括设置在面向衬底的位置处的第一侧部和与第一侧部相邻的第二侧部和第三侧部。 第一侧部分包括构造成夹持基板的端面的夹持部分。 第二侧部分形成具有第一侧部分的尖端部分，并且包括在将处理液体供应到基板之后将处理液引导到基板的下侧的液体引导部分。

公开(公告)号：US20130340796A1

公开(公告)日：2013-12-26

申请号：US13916826

申请日：2013-06-13

Applicant: Tokyo Electron Limited

Inventor： Hisashi Kawano ,  Norihiro Ito ,  Yosuke Hachiya ,  Jun Nogami ,  Kotaro Ooishi ,  Itaru Kanno

IPC: H01L21/02

CPC classification number: H01L21/02057 ,  G03F7/423 ,  H01L21/31133 ,  H01L21/67051

Abstract: The present disclosure provides a substrate processing apparatus including: a substrate processing chamber configured to process a substrate on which a target layer to be removed is formed on the surface of an underlying layer; a substrate holding unit provided in the substrate processing chamber and configured to hold the substrate; a mixed liquid supplying unit configured to supply a mixed liquid of sulfuric acid and hydrogen peroxide to the substrate held by the substrate holding unit in a mixing ratio of the hydrogen peroxide and a temperature that does not damage the underlying layer while removing the target layer; and an OH-group supplying unit configured to supply a fluid containing OH-group to the substrate in an amount that does not damage the underlying layer when the mixed liquid and the OH-group are mixed on the substrate.

Abstract translation: 本公开提供了一种基板处理装置，包括：基板处理室，被配置为处理其上形成有待去除的目标层的基板，其在下层的表面上形成; 衬底保持单元，设置在所述衬底处理室中并且构造成保持所述衬底; 混合液体供给单元，其被配置为在由所述基板保持单元保持的所述基板以与所述过氧化氢的混合比例和不除去所述下层的温度同时移除所述目标层的同时，供给硫酸和过氧化氢的混合液; 以及OH基供给单元，其构成为，在混合液和OH基混合在基板上时，向基板供给含有OH基团的流体，其量不会损伤下层。