-
公开(公告)号：US09551060B2
公开(公告)日：2017-01-24
申请号：US14810239
申请日：2015-07-27
Applicant: Tokyo Electron Limited
Inventor： Atsushi Gomi , Kanto Nakamura , Tooru Kitada , Yasunobu Suzuki , Shinji Furukawa
CPC classification number: C23C14/0063 , C23C14/081 , C23C14/3464 , C23C14/3492 , C23C14/541 , H01J37/3244 , H01J37/32724 , H01J37/3405
Abstract: A film forming apparatus, for forming a metal oxide film on an object, includes a holding unit and a heating unit. The holding unit includes a first heater and holds the object in a processing chamber. A first heater power supply supplies power to the first heater. A target electrode is electrically connected to a metal target provided above the holding unit. A sputtering power supply is electrically connected to the target electrode. An introduction mechanism supplies an oxygen gas toward the holding unit. The heating unit includes a second heater for heating the object and a moving mechanism for moving the second heater between a region in a first space disposed above the holding unit and a region in a second space separated from the first space. A second heater power supply supplies power to the second heater.
Abstract translation: 用于在物体上形成金属氧化物膜的成膜装置包括保持单元和加热单元。 保持单元包括第一加热器并将物体保持在处理室中。 第一加热器电源向第一加热器供电。 目标电极与设置在保持单元上方的金属靶电连接。 溅射电源电连接到目标电极。 导入机构向保持单元供给氧气。 加热单元包括用于加热物体的第二加热器和用于在设置在保持单元上方的第一空间中的区域和与第一空间分离的第二空间中的区域之间移动第二加热器的移动机构。 第二加热器电源向第二加热器供电。
-
公开(公告)号：US11469106B2
公开(公告)日：2022-10-11
申请号：US16347182
申请日：2017-11-01
Applicant: Tokyo Electron Limited
Inventor： Hiroyuki Toshima , Shinji Furukawa
IPC: G03F7/20 , G03F1/26 , H01L21/033
Abstract: In one embodiment, this hard mask for plasma etching is formed on a silicon-containing film. The hard mask is an amorphous film, and contains tungsten and silicon. The ratio of the concentration of tungsten and the concentration of silicon in the surface of the hard mask can be within the range between a ratio specifying that the concentration of tungsten is 35 at % and the concentration of silicon is 65 at % and a ratio specifying that the concentration of tungsten is 50 at % and the concentration of silicon is 50 at %.
-
公开(公告)号：US11410837B2
公开(公告)日：2022-08-09
申请号：US16346705
申请日：2017-10-23
Applicant: TOKYO ELECTRON LIMITED
Inventor： Hiroyuki Toshima , Tatsuo Hatano , Tetsuya Miyashita , Shinji Furukawa , Junichi Takei
Abstract: A film-forming device according to one embodiment includes a chamber body, a support, a moving device, a shielding member, a first holder and a second holder, in the film-forming device, a substrate supported by the support is linearly moved. The shielding member is disposed above an area where the substrate is moved, and includes a slit extending in a direction perpendicular to a movement direction of the substrate. The first holder and the second holder hold a first target and a second target, respectively, above the shielding member. The first target and the second target are arranged symmetrically with respect to a vertical plane including a linear path on which the center of the substrate is moved.
-
公开(公告)号：US10189230B2
公开(公告)日：2019-01-29
申请号：US15638099
申请日：2017-06-29
Applicant: TOKYO ELECTRON LIMITED
Inventor： Hiroyuki Toshima , Atsushi Shimada , Tatsuo Hirasawa , Tatsuo Hatano , Shinji Furukawa
IPC: B32B15/20 , H01L23/532 , C01G23/00 , C01G41/00 , H01L21/768
Abstract: A method for forming a copper film is provided. In the method, a base film that is a titanium nitride film, a tungsten film or a tungsten nitride film is formed along a surface of an insulating film of an object. A copper film is formed on the base film of the object cooled to a temperature of 209 K or less.
-
-
-
Search Results
14
records
(took 0.013 seconds)
