公开(公告)号：US11742190B2

公开(公告)日：2023-08-29

申请号：US17388638

申请日：2021-07-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Einstein Noel Abarra ,  Hiroyuki Toshima ,  Shota Ishibashi ,  Hiroyuki Iwashita ,  Tatsuo Hirasawa ,  Masato Shinada

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/34 ,  C23C14/35

CPC classification number: H01J37/3447 ,  C23C14/3464 ,  C23C14/35 ,  H01J37/32715 ,  H01J37/3417

Abstract: A sputtering apparatus includes a first target and a second target that emit sputter particles, a substrate support configured to support a substrate, and a slit plate disposed between the first and the second targets and the substrate and having a slit unit through which the sputter particles pass. The slit unit includes a first slit to the first and the second target side and a second slit to the substrate side. The second slit has a first protrusion and a second protrusion protruding toward the center of the second slit. When the slit unit is viewed from the first target, the first protrusion is hidden. When the slit unit is viewed from the second target, the second protrusion is hidden.

公开(公告)号：US11158492B2

公开(公告)日：2021-10-26

申请号：US16521825

申请日：2019-07-25

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki Toshima ,  Hiroyuki Iwashita ,  Tatsuo Hirasawa

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/50 ,  H01L21/02

Abstract: A film forming apparatus for forming a film by reactive sputtering includes a processing chamber, a sputter mechanism, a sputtered particle shielding member, a reaction chamber, a substrate support, a substrate moving mechanism, a sputtered particle passage hole, and a reactive gas introducing unit. While moving a substrate by the substrate moving mechanism, sputtered particles, that are released to the discharge space by the sputter mechanism and pass through the sputtered particle passage hole to be injected to the reaction chamber, are reacted with a reactive gas introduced into the reaction chamber, and a reactive sputtering film generated by the reaction is formed on the substrate.

公开(公告)号：US11851750B2

公开(公告)日：2023-12-26

申请号：US17384058

申请日：2021-07-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masato Shinada ,  Einstein Noel Abarra ,  Hiroyuki Toshima ,  Shota Ishibashi

IPC: C23C14/35 ,  C23C14/04 ,  H01J37/34 ,  G02B27/30

CPC classification number: C23C14/354 ,  C23C14/04 ,  H01J37/3447 ,  G02B27/30

Abstract: An apparatus for performing a sputtering process on a substrate is provided. The apparatus includes a processing chamber having a substrate support on which the substrate is placed, a target for emitting target particles to be adhered to the substrate by plasma formed in the processing chamber, a magnet, provided on a rear surface of the target, for adjusting a state of the plasma on the surface of the target, and a magnet moving mechanism for repeatedly moving the magnet between a position on one side and a position on the other side set across a center portion on the rear surface of the target. The apparatus further includes a collimator having two regulating plates for limiting an incident angle of the target particles to the substrate, and an arrangement position adjustment mechanism adjusting positions of the two regulating plates according to the movement of the magnet.

公开(公告)号：US10068798B2

公开(公告)日：2018-09-04

申请号：US15627478

申请日：2017-06-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki Toshima ,  Tatsuo Hatano ,  Shinji Furukawa ,  Naoki Watanabe ,  Naoyuki Suzuki

IPC: H01L21/48 ,  H01L21/768 ,  H01L21/687 ,  H01J37/32 ,  H01J37/34

Abstract: There is provided a method for performing a pre-treatment to form a copper wiring in a recess formed in a substrate, which includes forming a barrier layer on a surface of the substrate that defines the recess, and forming a seed layer on the barrier layer. The method further includes at least one of etching the barrier layer and etching the seed layer. In the at least one of etching the barrier layer and etching the seed layer, the substrate is inclined with respect to an irradiation direction of ions while rotating the substrate.

公开(公告)号：US09064690B2

公开(公告)日：2015-06-23

申请号：US13962327

申请日：2013-08-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadahiro Ishizaka ,  Atsushi Gomi ,  Kenji Suzuki ,  Tatsuo Hatano ,  Hiroyuki Toshima ,  Yasushi Mizusawa

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/285 ,  H01L23/532 ,  H01L21/312

CPC classification number: H01L21/02104 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/312 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A Cu wiring forming method forms Cu wiring in a recess of a predetermined pattern including a trench formed in an insulating film on a substrate surface. The method includes: forming a barrier film at least on a surface of the recess; forming a Cu film by PVD to fill the recess with the Cu film; forming an additional layer on the Cu film; polishing an entire surface by CMP to form the Cu wiring in the recess; forming a metal cap including a manganese oxide film on an entire surface including the insulating film and the Cu wiring of the substrate after performing the CMP polishing; and forming a dielectric cap on the metal cap.

Abstract translation: Cu布线形成方法在包括形成在基板表面上的绝缘膜中的沟槽的预定图案的凹部中形成Cu布线。 该方法包括：至少在凹部的表面上形成阻挡膜; 通过PVD形成Cu膜以用Cu膜填充凹部; 在Cu膜上形成附加层; 通过CMP抛光整个表面以在凹槽中形成Cu布线; 在进行CMP抛光之后，在包括绝缘膜和基板的Cu布线的整个表面上形成包括氧化锰膜的金属盖; 以及在所述金属盖上形成电介质盖。

公开(公告)号：US08617363B2

公开(公告)日：2013-12-31

申请号：US13661462

申请日：2012-10-26

Applicant: Tokyo Electron Limited

Inventor： Shigeru Mizuno ,  Hiroyuki Toshima

IPC: C23C14/35

CPC classification number: C23C14/35 ,  H01J37/3408 ,  H01J37/345

Abstract: A magnetron sputtering apparatus where a target is disposed to face a substrate installed in a vacuum chamber and magnets are disposed on a rear surface of the target, including a power supply unit configured to apply a voltage to the target; and a magnet array body including a magnet group arranged on a base body provided at the rear surface of the target. In the magnet array body, rod-shaped magnets each having different polarities at opposite ends thereof are disposed in a mesh shape on a surface of the base body facing the target; the mesh has a 2n polygonal shape (n being an integer greater than or equal to 2); permeable core members are disposed at intersection points of the mesh surrounded by the ends of the rod-shaped magnets; and end portions of the rod-shaped magnets which surround each of the core members have a same polarity.

Abstract translation: 一种磁控溅射装置，其中靶被设置为面对安装在真空室中的基板，并且磁体设置在目标的后表面上，包括被配置为向目标施加电压的电源单元; 以及包括设置在所述靶的后表面上的基体上的磁体组的磁体阵列体。 在磁体阵列体中，在其相对端部具有不同极性的棒状磁体以与基体相对的基体的表面上的网状布置， 网格具有2n多边形（n为大于或等于2的整数）; 可渗透芯部件设置在由杆状磁体的端部包围的网状物的交叉点处; 并且围绕每个芯构件的棒状磁体的端部具有相同的极性。

公开(公告)号：US11664207B2

公开(公告)日：2023-05-30

申请号：US16531782

申请日：2019-08-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masato Shinada ,  Hiroyuki Toshima

IPC: C23C14/34 ,  H01J37/34 ,  C23C14/50 ,  H01L21/67 ,  H01L21/677

CPC classification number: H01J37/3417 ,  C23C14/34 ,  C23C14/505 ,  H01J37/3429 ,  H01J37/3435 ,  H01J37/3447 ,  H01J2237/026 ,  H01J2237/20214 ,  H01J2237/20228 ,  H01J2237/332 ,  H01L21/67167 ,  H01L21/67196 ,  H01L21/67207 ,  H01L21/67742

Abstract: A film-forming apparatus comprises: a processing chamber defining a processing space, a first sputter-particle emitter and a second sputter-particle emitter having targets, respectively, from which sputter-particles are emitted in different oblique directions in the processing space, a sputter-particle blocking plate having a passage hole through which the sputter particles emitted from the first sputter-particle emitter and the second sputter-particle emitter pass, a substrate support configured to support a substrate and provided at a side opposite the first sputter-particle emitter and the second sputter-particle emitter with respect to the sputter-particle blocking plate in the processing space, a substrate moving mechanism configured to linearly move the substrate supported on the substrate support, and a controller configured to control the emission of sputter-particles from the first sputter-particle emitter and the second sputter-particle emitter while controlling the substrate moving mechanism to move the substrate linearly.

公开(公告)号：US11551930B2

公开(公告)日：2023-01-10

申请号：US16299623

申请日：2019-03-12

Applicant: Tokyo Electron Limited

Inventor： Akiteru Ko ,  Kazuya Okubo ,  Hiroyuki Toshima

IPC: H01L21/00 ,  H01L21/033 ,  H01L21/311 ,  H01L21/02

Abstract: Embodiments are described herein to reshape spacer profiles to improve spacer uniformity and thereby improve etch uniformity during pattern transfer associated with self-aligned multiple-patterning (SAMP) processes. For disclosed embodiments, cores are formed on a material layer for a substrate of a microelectronic workpiece. A spacer material layer is then formed over the cores. Symmetric spacers are then formed adjacent the cores by reshaping the spacer material layer using one or more directional deposition processes to deposit additional spacer material and using one or more etch process steps. For one example embodiment, one or more oblique physical vapor deposition (PVD) processes are used to deposit the additional spacer material for the spacer profile reshaping. This reshaping of the spacer profiles allows for symmetric spacers to be formed thereby improving etch uniformity during subsequent pattern transfer processes.

公开(公告)号：US11512388B2

公开(公告)日：2022-11-29

申请号：US16534116

申请日：2019-08-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masato Shinada ,  Hiroyuki Toshima

IPC: C23C14/34 ,  H01L21/67 ,  H01J37/34 ,  H01L21/02

Abstract: There is provided a film forming apparatus, including: a processing chamber having a processing space in which a film forming process is performed on a substrate; a substrate support part configured to support the substrate inside the processing chamber; at least one sputtering particle emission part including a target and configured to emit sputtering particles to the substrate from the target; and at least one etching particle emission part configured to emit etching particles having an etching action with respect to the substrate, wherein the sputtering particles emitted from the at least one sputtering particle emission part are deposited on the substrate to form a film, and a portion of the film is etched by the etching particles emitted from the at least one etching particle emission part.

公开(公告)号：US11469106B2

公开(公告)日：2022-10-11

申请号：US16347182

申请日：2017-11-01

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki Toshima ,  Shinji Furukawa

IPC: G03F7/20 ,  G03F1/26 ,  H01L21/033

Abstract: In one embodiment, this hard mask for plasma etching is formed on a silicon-containing film. The hard mask is an amorphous film, and contains tungsten and silicon. The ratio of the concentration of tungsten and the concentration of silicon in the surface of the hard mask can be within the range between a ratio specifying that the concentration of tungsten is 35 at % and the concentration of silicon is 65 at % and a ratio specifying that the concentration of tungsten is 50 at % and the concentration of silicon is 50 at %.