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公开(公告)号：US09362167B2
公开(公告)日：2016-06-07
申请号：US14620886
申请日：2015-02-12
Applicant: TOKYO ELECTRON LIMITED
Inventor： Atsushi Shimada , Shinji Furukawa , Tatsuo Hatano
IPC: H01L21/20 , H01L21/768 , H01L21/285
CPC classification number: H01L21/76882 , C23C14/024 , C23C14/046 , C23C14/0641 , C23C14/14 , C23C14/3464 , C23C14/5806 , H01L21/2855 , H01L21/76843 , H01L21/76876
Abstract: A method of supplying cobalt to a recess formed in an insulation film of an object to be processed is disclosed. In one embodiment, the method includes forming a cobalt nitride film on a surface of the insulation film comprising a surface defining the recess, forming a cobalt film on the cobalt nitride film, and heating the cobalt film.
Abstract translation: 公开了一种向被处理物的绝缘膜形成的凹部供给钴的方法。 在一个实施例中，该方法包括在绝缘膜的表面上形成氮化钴膜，该表面包括限定凹部的表面，在氮化钴膜上形成钴膜，并加热钴膜。
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公开(公告)号：US10910215B2
公开(公告)日：2021-02-02
申请号：US15639682
申请日：2017-06-30
Applicant: TOKYO ELECTRON LIMITED
Inventor： Naoki Watanabe , Tatsuo Hatano , Shinji Furukawa , Naoyuki Suzuki
Abstract: There is provided a method of forming an insulating film which includes providing a workpiece having a base portion and a protuberance portion formed to protrude from the base portion; and forming an insulating film on the workpiece by sputtering. The forming an insulating film includes forming the insulating film while changing an angle defined between the workpiece and a target.
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3.发明申请公开(公告)号：US20150187546A1
公开(公告)日：2015-07-02
申请号：US14403833
申请日：2013-04-30
Applicant: TOKYO ELECTRON LIMITED
Inventor： Shinji Furukawa , Atsushi Gomi , Tetsuya Miyashita , Toru Kitada , Kanto Nakamura
CPC classification number: C23C14/5853 , C23C14/08 , C23C14/14 , C23C14/3464 , C23C14/352 , C23C14/564 , H01J37/34 , H01J37/3405 , H01J37/3426 , H01J37/3429 , H01J37/3447 , H01J2237/3322 , H01L43/12
Abstract: The present disclosure provides a vacuum-processing apparatus for forming a metal film on a substrate by sputtering targets with ions of plasma, and then oxidizing the metal film, the apparatus including: a first target composed of a material having a property of adsorbing oxygen; a second target composed of a metal; a power supply unit configured to apply a voltage to the targets; a shutter configured to prevent particles generated from one of the targets from adhering to the other of the targets; a shielding member; an oxygen supply unit configured to supply an oxygen-containing gas to the substrate mounted on the mounting unit; and a control unit configured to perform supplying a plasma-generating voltage to the targets and sputtering the targets and supplying the oxygen-containing gas from the oxygen supply unit to the substrate.
Abstract translation: 本发明提供一种真空处理装置，用于通过用等离子体离子溅射靶材在基板上形成金属膜，然后氧化金属膜，该装置包括：由具有吸附氧性质的材料构成的第一靶; 由金属组成的第二个目标; 配置为向所述目标施加电压的电源单元; 构造成防止从一个靶产生的颗粒粘附到另一个靶的快门; 屏蔽构件; 供氧单元，被配置为向安装在所述安装单元上的所述基板供给含氧气体; 以及控制单元，其被配置为执行向所述目标提供等离子体产生电压并溅射所述目标物并将所述含氧气体从所述供氧单元供应到所述基板。
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公开(公告)号：US10068798B2
公开(公告)日：2018-09-04
申请号：US15627478
申请日：2017-06-20
Applicant: TOKYO ELECTRON LIMITED
Inventor： Hiroyuki Toshima , Tatsuo Hatano , Shinji Furukawa , Naoki Watanabe , Naoyuki Suzuki
IPC: H01L21/48 , H01L21/768 , H01L21/687 , H01J37/32 , H01J37/34
Abstract: There is provided a method for performing a pre-treatment to form a copper wiring in a recess formed in a substrate, which includes forming a barrier layer on a surface of the substrate that defines the recess, and forming a seed layer on the barrier layer. The method further includes at least one of etching the barrier layer and etching the seed layer. In the at least one of etching the barrier layer and etching the seed layer, the substrate is inclined with respect to an irradiation direction of ions while rotating the substrate.
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公开(公告)号：US10049860B2
公开(公告)日：2018-08-14
申请号：US14412258
申请日：2013-04-30
Applicant: Tokyo Electron Limited
Inventor： Atsushi Gomi , Tetsuya Miyashita , Shinji Furukawa , Koji Maeda , Masamichi Hara , Naoyuki Suzuki , Hiroshi Miki , Toshiharu Hirata
Abstract: An apparatus includes a row of substrate transfer devices 3 which can deliver a wafer W within a transfer chamber; and rows of process modules PM, arranged at right and left sides of the row of the substrate transfer devices along the row, configured to perform processes to the wafer W. The rows of the process modules PM are arranged such that each of the processes can be performed by at least two process modules PM. Thus, when a single process module PM cannot be used, the wafer W can be rapidly transferred to another process module PM which can perform the same process as performed in the corresponding process module. Therefore, even when the single process module PM cannot be used, the processes can be continued to the wafers W without stopping an operation of the apparatus, so that the number of wasted wafers W can be reduced.
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Patent Agency Ranking
公开(公告)号：US20150235815A1
公开(公告)日：2015-08-20
申请号：US14412258
申请日：2013-04-30
Applicant: Tokyo Electron Limited
Inventor： Atsushi Gomi , Tetsuya Miyashita , Shinji Furukawa , Koji Maeda , Masamichi Hara , Naoyuki Suzuki , Hiroshi Miki , Toshiharu Hirata
IPC: H01J37/32
CPC classification number: H01J37/32733 , C23C14/568 , H01L21/67161 , H01L21/67173 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67745 , H01L43/12
Abstract: An apparatus includes a row of substrate transfer devices 3 which can deliver a wafer W within a transfer chamber; and rows of process modules PM, arranged at right and left sides of the row of the substrate transfer devices along the row, configured to perform processes to the wafer W. The rows of the process modules PM are arranged such that each of the processes can be performed by at least two process modules PM. Thus, when a single process module PM cannot be used, the wafer W can be rapidly transferred to another process module PM which can perform the same process as performed in the corresponding process module. Therefore, even when the single process module PM cannot be used, the processes can be continued to the wafers W without stopping an operation of the apparatus, so that the number of wasted wafers W can be reduced.
Abstract translation: 一种装置包括一排衬底传送装置3，其可在传送室内传送晶片W; 以及沿着行布置在基板传送装置的行的左右两侧的处理模块PM的行，被配置为对晶片W执行处理。处理模块PM的行被布置成使得每个处理可以 由至少两个处理模块PM执行。 因此，当不能使用单个处理模块PM时，可以将晶片W快速转移到可以执行与在相应的处理模块中执行的相同处理的另一个处理模块PM。 因此，即使不能使用单个处理模块PM，也可以在不停止设备的操作的情况下继续进行晶片W的处理，从而可以减少浪费的晶片W的数量。
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公开(公告)号：US10468237B2
公开(公告)日：2019-11-05
申请号：US16029847
申请日：2018-07-09
Applicant: Tokyo Electron Limited
Inventor： Atsushi Gomi , Tetsuya Miyashita , Shinji Furukawa , Koji Maeda , Masamichi Hara , Naoyuki Suzuki , Hiroshi Miki , Toshiharu Hirata
IPC: H01J37/32 , C23C14/56 , H01L21/67 , H01L21/677 , H01L43/12
Abstract: An apparatus includes a row of substrate transfer devices 3 which can deliver a wafer W within a transfer chamber; and rows of process modules PM, arranged at right and left sides of the row of the substrate transfer devices along the row, configured to perform processes to the wafer W. The rows of the process modules PM are arranged such that each of the processes can be performed by at least two process modules PM. Thus, when a single process module PM cannot be used, the wafer W can be rapidly transferred to another process module PM which can perform the same process as performed in the corresponding process module. Therefore, even when the single process module PM cannot be used, the processes can be continued to the wafers W without stopping an operation of the apparatus, so that the number of wasted wafers W can be reduced.
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公开(公告)号：US20180315585A1
公开(公告)日：2018-11-01
申请号：US16029847
申请日：2018-07-09
Applicant: Tokyo Electron Limited
Inventor： Atsushi Gomi , Tetsuya Miyashita , Shinji Furukawa , Koji Maeda , Masamichi Hara , Naoyuki Suzuki , Hiroshi Miki , Toshiharu Hirata
CPC classification number: H01J37/32733 , C23C14/566 , C23C14/568 , H01J37/32899 , H01L21/67161 , H01L21/67173 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67745 , H01L43/12
Abstract: An apparatus includes a row of substrate transfer devices 3 which can deliver a wafer W within a transfer chamber; and rows of process modules PM, arranged at right and left sides of the row of the substrate transfer devices along the row, configured to perform processes to the wafer W. The rows of the process modules PM are arranged such that each of the processes can be performed by at least two process modules PM. Thus, when a single process module PM cannot be used, the wafer W can be rapidly transferred to another process module PM which can perform the same process as performed in the corresponding process module. Therefore, even when the single process module PM cannot be used, the processes can be continued to the wafers W without stopping an operation of the apparatus, so that the number of wasted wafers W can be reduced.
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公开(公告)号：US09790590B2
公开(公告)日：2017-10-17
申请号：US14403833
申请日：2013-04-30
Applicant: TOKYO ELECTRON LIMITED
Inventor： Shinji Furukawa , Atsushi Gomi , Tetsuya Miyashita , Toru Kitada , Kanto Nakamura
CPC classification number: C23C14/5853 , C23C14/08 , C23C14/14 , C23C14/3464 , C23C14/352 , C23C14/564 , H01J37/34 , H01J37/3405 , H01J37/3426 , H01J37/3429 , H01J37/3447 , H01J2237/3322 , H01L43/12
Abstract: The present disclosure provides a vacuum-processing apparatus for forming a metal film on a substrate by sputtering targets with ions of plasma, and then oxidizing the metal film, the apparatus including: a first target composed of a material having a property of adsorbing oxygen; a second target composed of a metal; a power supply unit configured to apply a voltage to the targets; a shutter configured to prevent particles generated from one of the targets from adhering to the other of the targets; a shielding member; an oxygen supply unit configured to supply an oxygen-containing gas to the substrate mounted on the mounting unit; and a control unit configured to perform supplying a plasma-generating voltage to the targets and sputtering the targets and supplying the oxygen-containing gas from the oxygen supply unit to the substrate.
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10.发明授权Dual-target sputter deposition with controlled phase difference between target powers 有权双靶溅射沉积，目标功率之间具有受控的相位差公开(公告)号：US09567667B2
公开(公告)日：2017-02-14
申请号：US14490410
申请日：2014-09-18
Applicant: TOKYO ELECTRON LIMITED
Inventor： Shinji Furukawa , Naoki Watanabe , Hiroshi Miki , Tooru Kitada , Yasuhiko Kojima
CPC classification number: C23C14/3464 , C23C14/08 , C23C14/3485 , H01J37/3417 , H01J37/3444 , H01J37/3464 , H01J37/347
Abstract: System and method of insulating film deposition. A sputter deposition chamber comprises a pair of targets made of the same insulating material. Each target is applied with a high frequency power signal concurrently. A phase adjusting unit is used to adjust the phase difference between the high frequency power signals supplied to the pair of targets to a predetermined value, thereby improving the in-plane thickness distribution of a resultant film. The predetermined value is target material specific.
Abstract translation: 绝缘膜沉积的系统和方法。 溅射沉积室包括由相同绝缘材料制成的一对靶。 每个目标同时施加高频功率信号。 相位调整单元用于将提供给该对目标的高频功率信号之间的相位差调整为规定值，从而提高所得到的膜的面内厚度分布。 预定值是目标材料特定的。
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