公开(公告)号：US20190198349A1

公开(公告)日：2019-06-27

申请号：US16232532

申请日：2018-12-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuo ASADA ,  Takehiko ORII ,  Shinji IRIE ,  Nobuhiro TAKAHASHI ,  Ayano HAGIWARA ,  Tatsuya YAMAGUCHI

IPC: H01L21/3213 ,  H01L21/67 ,  H01L21/3105 ,  H01L29/66 ,  H01L21/02

Abstract: There is provided an etching method which includes: forming a blocking film configured to prevent an etching gas for etching a silicon-containing film from passing through each pore of a porous film and prevent the etching gas from being supplied to a film not to be etched, by supplying at least one film-forming gas to a substrate in which the silicon-containing film, the porous film, and the film not to be etched are sequentially formed adjacent to each other in a lateral direction; and etching the silicon-containing film by supplying the etching gas.

公开(公告)号：US20190030558A1

公开(公告)日：2019-01-31

申请号：US16151780

申请日：2018-10-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Miyako KANEKO ,  Takehiko ORII ,  ltaru KANNO

IPC: B05B12/14 ,  H01L21/67 ,  B05B16/20 ,  B05B7/00 ,  H01L21/02 ,  B05B7/24

Abstract: A substrate processing method includes supplying onto a substrate a processing liquid which contains a volatile component and forms a film, vaporizing the volatile component in the processing liquid such that the processing liquid solidifies or cures on the substrate and forms a film on the substrate, and supplying onto the film formed on the substrate a removing liquid which removes the processing liquid. The processing liquid is supplied onto the substrate after dry etching or ashing is applied to the substrate.

公开(公告)号：US20230223270A1

公开(公告)日：2023-07-13

申请号：US17997155

申请日：2021-04-15

Applicant: Tokyo Electron Limited

Inventor： Takehiko ORII ,  Nobuhiro TAKAHASHI

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L21/31144 ,  H01L21/67069 ,  H01L21/02203 ,  H01L21/31116

Abstract: An etching method of supplying etching gases to a substrate to etch a surface of the substrate, includes a protection step of supplying amine gas to the substrate having an oxygen-containing silicon film to form a protective film for preventing etching by the etching gases on a surface of the oxygen-containing silicon film, for protecting the oxygen-containing silicon film, and a first etching step of supplying a first etching gas, which is one of the etching gases and is a fluorine-containing gas, and the amine gas to the substrate to etch the oxygen-containing silicon film.

公开(公告)号：US20210305056A1

公开(公告)日：2021-09-30

申请号：US17211393

申请日：2021-03-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takehiko ORII ,  Nobuhiro TAKAHASHI

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/306

Abstract: An etching method is provided. In the etching method, a protective film-forming gas including an amine gas is supplied to a substrate having a surface on which a first film and a second film are formed, the first film and the second film having respective properties of being etched by an etching gas, and a protective film is formed to cover the first film such that the first film is selectively protected between the first film and the second film when the etching gas is supplied. Further, the second film is selectively etched by supplying the etching gas to the substrate after the protective film is formed.

公开(公告)号：US20190221440A1

公开(公告)日：2019-07-18

申请号：US16244511

申请日：2019-01-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuo ASADA ,  Takehiko ORII ,  Kento SUZUKI

IPC: H01L21/306 ,  B08B7/00 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/30604 ,  B08B7/0071 ,  H01L21/02057 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67069

Abstract: An etching method includes etching a silicon-containing film formed on a surface of a substrate by supplying an iodine heptafluoride gas and a basic gas to the substrate.

公开(公告)号：US20180166295A1

公开(公告)日：2018-06-14

申请号：US15841147

申请日：2017-12-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tsuhung HUANG ,  Jun LIN ,  Takehiko ORII

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/677 ,  H01L21/306 ,  H01L21/3213

Abstract: In an etching method for removing a processing target layer formed on a substrate for manufacturing electronic devices, a first break-through process of removing an oxide film formed on a surface of the processing target layer is performed, and a first main etching process of etching the processing target layer is performed after the first break-through process. Then, a second break-through process of removing the oxide film exposed after the first main etching process is performed, and a second main etching process of etching the processing target layer is performed after the second break-through process.

公开(公告)号：US20150128994A1

公开(公告)日：2015-05-14

申请号：US14539174

申请日：2014-11-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Miyako KANEKO ,  Keiji TANOUCHI ,  Takehiko ORII ,  Itaru KANNO ,  Meitoku AIBARA ,  Satoru TANAKA

IPC: H01L21/02 ,  B08B3/02 ,  B08B3/08 ,  H01L21/67 ,  H01L21/677

CPC classification number: H01L21/0206 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/67051

Abstract: A method for cleaning a substrate includes supplying to a substrate a film-forming processing liquid which includes a volatile component and forms a film on the substrate, vaporizing the volatile component in the film-forming processing liquid such that the film-forming processing liquid solidifies or cures on the substrate and forms a processing film on the substrate, supplying to the substrate having the processing film a strip-processing liquid which strips the processing film from the substrate, and supplying to the processing film formed on the substrate a dissolving-processing liquid which dissolves the processing film after the supplying of the strip-processing liquid.

Abstract translation: 一种清洗基板的方法包括向基板供给包含挥发性成分的成膜处理液，在基板上形成膜，使成膜处理液中的挥发成分蒸发，使成膜处理液凝固 或固化在基板上，在基板上形成处理膜，向具有处理膜的基板供给从基板剥离处理膜的剥离处理液，向基板上形成的处理膜供给溶解处理 在提供带状处理液体之后溶解处理膜的液体。