公开(公告)号：US20180019118A1

公开(公告)日：2018-01-18

申请号：US15716588

申请日：2017-09-27

Applicant: Tokyo Electron Limited

Inventor： Makoto MURAMATSU ,  Takahiro KITANO ,  Tadatoshi TOMITA ,  Keiji TANOUCHI

IPC: H01L21/027 ,  H01L21/311 ,  H01L21/02 ,  H01L21/687 ,  H01L21/67

CPC classification number: H01L21/0271 ,  H01L21/02118 ,  H01L21/02337 ,  H01L21/31138 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/68742

Abstract: The present invention, when forming a pattern on a substrate, forms a film of a block copolymer containing at least two polymers on the substrate, heats the film of the block copolymer under a solvent vapor atmosphere to subject the block copolymer to phase separation, and removes one of the polymers in the film of the phase-separated block copolymer, thereby accelerating fluidization of the polymers of the block copolymer to enable acceleration of the phase separation.

公开(公告)号：US20190181056A1

公开(公告)日：2019-06-13

申请号：US16213240

申请日：2018-12-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobuhiro TAKAHASHI ,  Koji TAKEYA ,  Keiji TANOUCHI

IPC: H01L21/66 ,  H01L21/3065 ,  H01L21/67

Abstract: There is provided a method of etching a silicon-containing film formed on a substrate, comprising: supplying an etching gas including a fluorine-containing gas having a smaller molecular weight than ClF3 to the silicon-containing film; and controlling etching amounts at a central portion and an outer peripheral portion of the silicon-containing film by controlling a flow velocity of the etching gas.

公开(公告)号：US20160293403A1

公开(公告)日：2016-10-06

申请号：US14388887

申请日：2013-11-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Makoto MURAMATSU ,  Takahiro KITANO ,  Tadatoshi TOMITA ,  Keiji TANOUCHI

IPC: H01L21/027 ,  H01L21/67 ,  H01L21/687 ,  H01L21/02

CPC classification number: H01L21/0271 ,  H01L21/02118 ,  H01L21/02337 ,  H01L21/31138 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/68742

Abstract: The present invention, when forming a pattern on a substrate, forms a film of a block copolymer containing at least two polymers on the substrate, heats the film of the block copolymer under a solvent vapor atmosphere to subject the block copolymer to phase separation, and removes one of the polymers in the film of the phase-separated block copolymer, thereby accelerating fluidization of the polymers of the block copolymer to enable acceleration of the phase separation.

Abstract translation: 本发明当在基片上形成图形时，在基片上形成含有至少两种聚合物的嵌段共聚物的膜，在溶剂蒸汽气氛下加热嵌段共聚物的膜，使嵌段共聚物相分离， 除去相分离嵌段共聚物的膜中的一种聚合物，从而促进嵌段共聚物的聚合物的流化，从而能够加速相分离。

公开(公告)号：US20220277968A1

公开(公告)日：2022-09-01

申请号：US17745998

申请日：2022-05-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Miyako KANEKO ,  Keiji TANOUCHI ,  Takehiko ORII ,  Itaru KANNO ,  Meitoku AIBARA ,  Satoru TANAKA

IPC: H01L21/67 ,  H01L21/02

Abstract: A method for cleaning a substrate includes supplying, to a substrate which does not have a resist formed thereon, a film-forming processing liquid which includes a volatile component and forms a processing film, volatilizing the volatile component of the film-forming processing liquid such that the film-forming processing liquid on the substrate is solidified or cured and that the processing film is formed on the substrate, heating a peeling processing liquid which peels off the processing film from the substrate without dissolving the processing film such that a heated peeling processing liquid is prepared, and supplying, to the processing film formed on the substrate, the heated peeling processing liquid such that the heated peeling processing liquid peels off the processing film from the substrate without dissolving the processing film.

公开(公告)号：US20180182610A1

公开(公告)日：2018-06-28

申请号：US15904539

申请日：2018-02-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Miyako KANEKO ,  Keiji TANOUCHI ,  Takehiko ORll ,  ltaru KANNO ,  Meitoku AlBARA ,  Satoru TANAKA

IPC: H01L21/02 ,  H01L21/67

Abstract: A method for cleaning a substrate includes supplying to a substrate a film-forming processing liquid which includes a volatile component and forms a film on the substrate, vaporizing the volatile component in the film-forming processing liquid such that the film-forming processing liquid solidifies or cures on the substrate and forms a processing film on the substrate, supplying to the substrate having the processing film a strip-processing liquid which strips the processing film from the substrate, and supplying to the processing film formed on the substrate a dissolving-processing liquid which dissolves the processing film after the supplying of the strip-processing liquid.

公开(公告)号：US20210358761A1

公开(公告)日：2021-11-18

申请号：US17277578

申请日：2019-06-24

Applicant: Tokyo Electron Limited

Inventor： Nobuhiro TAKAHASHI ,  Keiji TANOUCHI ,  Shinji IRIE ,  Akitaka SHIMIZU

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/3065 ,  H01J37/32

Abstract: An etching method includes a step of preparing a substrate having a portion to be etched, a step of plasma-etching the portion to be etched of the substrate into a predetermined pattern using plasma of a processing gas containing a CF-based gas, and then a step of removing a CF-based deposit which remains as an etching residue. The step of removing the CF-based deposit includes a step of forming an oxide including an oxide of the CF-based deposit using oxygen-containing radicals, and a step of removing the generated oxide by radical processing or chemical processing using gas.

公开(公告)号：US20150128994A1

公开(公告)日：2015-05-14

申请号：US14539174

申请日：2014-11-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Miyako KANEKO ,  Keiji TANOUCHI ,  Takehiko ORII ,  Itaru KANNO ,  Meitoku AIBARA ,  Satoru TANAKA

IPC: H01L21/02 ,  B08B3/02 ,  B08B3/08 ,  H01L21/67 ,  H01L21/677

CPC classification number: H01L21/0206 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/67051

Abstract: A method for cleaning a substrate includes supplying to a substrate a film-forming processing liquid which includes a volatile component and forms a film on the substrate, vaporizing the volatile component in the film-forming processing liquid such that the film-forming processing liquid solidifies or cures on the substrate and forms a processing film on the substrate, supplying to the substrate having the processing film a strip-processing liquid which strips the processing film from the substrate, and supplying to the processing film formed on the substrate a dissolving-processing liquid which dissolves the processing film after the supplying of the strip-processing liquid.

Abstract translation: 一种清洗基板的方法包括向基板供给包含挥发性成分的成膜处理液，在基板上形成膜，使成膜处理液中的挥发成分蒸发，使成膜处理液凝固 或固化在基板上，在基板上形成处理膜，向具有处理膜的基板供给从基板剥离处理膜的剥离处理液，向基板上形成的处理膜供给溶解处理 在提供带状处理液体之后溶解处理膜的液体。