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    Resist pattern forming method and method of manufacturing semiconductor device
    11.
    发明申请
    Resist pattern forming method and method of manufacturing semiconductor device 审中-公开
    抗蚀剂图案形成方法和半导体器件的制造方法

    公开(公告)号：US20060194449A1

    公开(公告)日：2006-08-31

    申请号：US11350127

    申请日：2006-02-09

    申请人： Tomoyuki Takeishi ,  Shinichi Ito ,  Yasunobu Onishi ,  Tsuyoshi Shibata

    发明人： Tomoyuki Takeishi ,  Shinichi Ito ,  Yasunobu Onishi ,  Tsuyoshi Shibata

    IPC分类号： H01L21/31

    CPC分类号： G03F7/38 ,  G03F7/0045 ,  H01L21/0276

    摘要： A resist pattern forming method includes forming a chemically amplified resist film on a substrate, forming a latent image in the resist film by irradiating an energy ray, contacting a liquid to a surface of the resist film, increasing temperature of the resist film to first temperature after the forming the latent image and the contacting, the first temperature being lower than a reaction start temperature at which an acid catalysis reaction occurs in the resist film, maintaining the temperature of the resist film at the first temperature for a predetermined time, increasing the temperature of the resist film to second temperature being not lower than the reaction start temperature after a lapse of the predetermined time, decreasing the temperature of the resist film increased to the second temperature to a temperature lower than the reaction start temperature, and developing the resist film after the decreasing the temperature.

    摘要翻译： 抗蚀剂图形形成方法包括在基板上形成化学放大型抗蚀剂膜，通过照射能量射线在液体中形成潜像，使其与抗蚀剂膜的表面接触，使抗蚀剂膜的温度升高到第一温度 在形成潜像和接触之后，第一温度低于在抗蚀剂膜中发生酸催化反应的反应开始温度，将抗蚀剂膜的温度保持在第一温度预定时间，增加 抗蚀剂膜的温度与第二温度不低于经过规定时间后的反应开始温度，将抗蚀剂膜的温度降低到第二温度至比反应开始温度低的温度，并使抗蚀剂显影 电影降温后。

    Pattern forming method and method for manufacturing a semiconductor device
    12.
    发明授权
    Pattern forming method and method for manufacturing a semiconductor device 失效
    图案形成方法和制造半导体器件的方法

    公开(公告)号：US07527918B2

    公开(公告)日：2009-05-05

    申请号：US10992349

    申请日：2004-11-19

    申请人： Takehiro Kondoh ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kenji Chiba ,  Shinichi Ito

    发明人： Takehiro Kondoh ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kenji Chiba ,  Shinichi Ito

    IPC分类号： G03F7/00

    CPC分类号： G03F7/40 ,  G03F7/405

    摘要： A pattern forming method comprises forming a first resist pattern on a substrate, irradiating light on the first resist pattern, forming a resist film including a cross-linking material on the substrate and the first resist pattern, forming a second resist pattern including a cross-linking layer formed at an interface between the first resist pattern and the resist film by causing a cross-linking reaction at the interface, and irradiating light on the first resist pattern including setting an amount of the light irradiated on the first resist pattern such that a dimension of the second resist pattern is to be a predetermined dimension based on a previously prepared relationship between a difference between a dimension relating to the first resist pattern and a dimension relating to the second resist pattern and the amount of the light irradiated on the first resist pattern.

    摘要翻译： 图案形成方法包括在基板上形成第一抗蚀剂图案，在第一抗蚀剂图案上照射光，在基板上形成包含交联材料的抗蚀剂膜和第一抗蚀剂图案，形成第二抗蚀剂图案， 通过在界面处引起交联反应而在第一抗蚀剂图案和抗蚀剂膜之间的界面处形成的连接层，并且对第一抗蚀剂图案照射光，包括设定照射在第一抗蚀剂图案上的光量，使得 基于与第一抗蚀剂图案有关的尺寸与第二抗蚀剂图案的尺寸之间的差异以及照射在第一抗蚀剂层上的光量，第二抗蚀剂图案的尺寸为预定尺寸 模式。

    Substrate processing method, substrate processing apparatus, and manufacturing method of semiconductor device
    16.
    发明申请
    Substrate processing method, substrate processing apparatus, and manufacturing method of semiconductor device 失效
    基板处理方法，基板处理装置以及半导体装置的制造方法

    公开(公告)号：US20070190462A1

    公开(公告)日：2007-08-16

    申请号：US11654565

    申请日：2007-01-18

    申请人： Eishi Shiobara ,  Kentaro Matsunaga ,  Daisuke Kawamura ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Shinichi Ito

    发明人： Eishi Shiobara ,  Kentaro Matsunaga ,  Daisuke Kawamura ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Shinichi Ito

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70341 ,  Y10S430/162

    摘要： A substrate processing method including while a liquid is supplied between a processing target substrate to be applied with exposure treatment and a projection optical system of an exposure apparatus for carrying out the exposure treatment, prior to providing a resist film on a first main face of the processing target substrate that is provided for liquid immersion exposure for carrying out the exposure treatment at a side to be applied with the exposure treatment, selectively applying at least hydrophobic treatment with respect to a region in a predetermined range from a peripheral rim part of a second main face opposite to the first main face.

    摘要翻译： 一种基板处理方法，包括在将待施加曝光处理的处理对象基板和用于进行曝光处理的曝光装置的投影光学系统之间提供液体之前，在将抗蚀剂膜提供在第一主面 为了进行曝光处理的一侧进行曝光处理而设置的液浸曝光处理对象基板，从第二图像的外围边缘部选择性地施加相对于规定范围的区域的至少疏水处理 主面与第一主面相对。

    Semiconductor device manufacturing method to form resist pattern
    18.
    发明授权
    Semiconductor device manufacturing method to form resist pattern 失效
    形成抗蚀剂图案的半导体器件制造方法

    公开(公告)号：US07968272B2

    公开(公告)日：2011-06-28

    申请号：US11600198

    申请日：2006-11-16

    申请人： Daisuke Kawamura ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

    发明人： Daisuke Kawamura ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

    IPC分类号： G03C5/04

    CPC分类号： G03F7/70925 ,  G03F7/70341

    摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.

    摘要翻译： 本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。 在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的， 待处理衬底的端部。 在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为 最接近被处理衬底。 在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。

    Semiconductor device manufacturing method to form resist pattern, and substrate processing apparatus
    20.
    发明申请
    Semiconductor device manufacturing method to form resist pattern, and substrate processing apparatus 失效
    形成抗蚀剂图案的半导体器件制造方法以及基板处理装置

    公开(公告)号：US20070128554A1

    公开(公告)日：2007-06-07

    申请号：US11600198

    申请日：2006-11-16

    申请人： Daisuke Kawamura ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

    发明人： Daisuke Kawamura ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70925 ,  G03F7/70341

    摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.

    摘要翻译： 本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。 在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的， 待处理衬底的端部。 在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为 最接近被处理衬底。 在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。