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74 条记录 (耗时 0.021 秒)

    Trochoid oil pump
    11.
    发明授权
    Trochoid oil pump 有权
    龙舟油泵

    公开(公告)号：US07488163B2

    公开(公告)日：2009-02-10

    申请号：US11312444

    申请日：2005-12-21

    申请人： Kazuo Enzaka ,  Masahiro Kasahara ,  Yasunori Ono ,  Kenichi Fujiki ,  Keiichi Kai ,  Yoshiaki Senga ,  Atsushi Kaneko

    发明人： Kazuo Enzaka ,  Masahiro Kasahara ,  Yasunori Ono ,  Kenichi Fujiki ,  Keiichi Kai ,  Yoshiaki Senga ,  Atsushi Kaneko

    IPC分类号： F04C2/10

    CPC分类号： F04C2/084 ,  F04C2/102 ,  F04C15/0007

    摘要： A trochoid oil pump, which enables the endurance to be increased and the reduction of discharge pulsations and noise to be achieved, and in which those results can be realized with a very simple structure.An interdental space constituted by an inner rotor and an outer rotor having trochoid tooth profile or substantially trochoid tooth profile starts a compression stroke in the location of a partition section between an intake port and a discharge portion, and a linking gap L is composed by the interdental space and a preceding adjacent interdental space realized in a discharge stroke. The linking gap expands gradually from the start of compression stroke to the discharge stroke.

    摘要翻译： 一种摆线油泵，其能够提高耐久性并实现减少排出脉动和噪声，并且可以以非常简单的结构实现这些结果。 由内转子和外转子构成的齿间空间具有次摆线齿廓或大体上的次摆线齿轮廓，在进气口和排出部之间的分隔部的位置开始压缩冲程，并且连接间隙L由 间隔空间和在排出冲程中实现的先前相邻的齿间空间。 连接间隙从压缩行程开始逐渐扩大到排出冲程。

    Crosshead
    13.
    发明授权
    Crosshead 有权
    十字头

    公开(公告)号：US06634878B1

    公开(公告)日：2003-10-21

    申请号：US09657809

    申请日：2000-09-08

    申请人： Naoki Yanagawa ,  Atsushi Kaneko

    发明人： Naoki Yanagawa ,  Atsushi Kaneko

    IPC分类号： B29C4704

    CPC分类号： B29C47/064 ,  B29C47/0016 ,  B29C47/128 ,  B29C47/28 ,  B29C47/86 ,  B29L2031/3462

    摘要： A ground color main extruder 9 which supplies a ground color resin that is to cover a strand conductor 3 is disposed. Plural stripe sub extruders 21 and 31 which supply a colored resin in a strip-like manner in a longitudinal direction of the strand conductor 3 simultaneously with extrusion of the ground color resin are disposed. Insert molds 16 and 17 are multiply disposed. While alternatingly switching over the stripe sub extruders 21 and 31 each time when a colored resin to be supplied is changed, a colored resin of a predetermined color is supplied through a path which is disposed for each of the stripe sub extruders 21 and 31.

    摘要翻译： 设置提供覆盖股线导体3的地面色树脂的地面色粉主挤出机9。 设置与地面色树脂挤出同时在股线导体3的长度方向上以带状方式供给着色树脂的多条条子挤出机21和31。 插入模具16和17是多重布置的。 当每次当要供应的着色树脂改变时交替地切换条形子挤出机21和31，通过为每个条形子挤出机21和31设置的路径供应预定颜色的着色树脂。

    Cleaning device and image forming apparatus including the same
    15.
    发明授权
    Cleaning device and image forming apparatus including the same 有权
    清洁装置和包括该清洁装置的图像形成装置

    公开(公告)号：US08897668B2

    公开(公告)日：2014-11-25

    申请号：US13485131

    申请日：2012-05-31

    申请人： Atsushi Kaneko ,  Kazuyoshi Hagiwara ,  Masaaki Tokunaga ,  Kazutoshi Sugitani ,  Koichi Sato ,  Tsutomu Komiyama

    发明人： Atsushi Kaneko ,  Kazuyoshi Hagiwara ,  Masaaki Tokunaga ,  Kazutoshi Sugitani ,  Koichi Sato ,  Tsutomu Komiyama

    IPC分类号： G03G15/16

    CPC分类号： G03G15/168 ,  G03G15/0189 ,  G03G15/161 ,  G03G2215/00143

    摘要： A cleaning device includes first to third cleaning members that clean a surface of an endless belt that is looped over rollers including a driving roller. The first cleaning member is brought into contact with and separated from the surface at a predetermined timing. The second cleaning member is disposed upstream of the first cleaning member and downstream of the driving roller in a movement direction of the endless belt. The second cleaning member is in contact with the endless belt so as to prevent a tension variation of the endless belt caused by the first cleaning member from affecting the driving roller. The third cleaning member is disposed downstream of the first cleaning member. A contact state in which the third cleaning member is in contact with the endless belt is switched from a first contact state to a second contact state so as to reduce the tension variation.

    摘要翻译： 清洁装置包括清洁围绕包括驱动辊的辊的环形带的表面的第一至第三清洁构件。 第一清洁构件在预定的时间与表面接触并与之分离。 第二清洁部件沿着环形带的移动方向设置在第一清洁部件的上游并且位于驱动辊的下游。 第二清洁构件与环形带接触，以防止由第一清洁构件引起的环形带的张力变化影响驱动辊。 第三清洁部件设置在第一清洁部件的下游。 第三清洁部件与环形带接触的接触状态从第一接触状态切换到第二接触状态，以减小张力变化。

    Methods and apparatus for integrated, automatic pseudo localization of software
    17.
    发明授权
    Methods and apparatus for integrated, automatic pseudo localization of software 有权
    用于软件的集成，自动伪定位的方法和装置

    公开(公告)号：US08615732B2

    公开(公告)日：2013-12-24

    申请号：US11516023

    申请日：2006-09-05

    申请人： Atsushi Kaneko ,  Hans E. E. Kedefors

    发明人： Atsushi Kaneko ,  Hans E. E. Kedefors

    IPC分类号： G06F9/44

    CPC分类号： G06F8/71 ,  G06F9/454

    摘要： Methods and articles of manufacture for integrated, automatic pseudo localization of software applications are disclosed herein. A pseudo localization process, comprised of one or more utility applications, is integrated into a build cycle for a developing software application to generate pseudo-translated user-interface code as part of a build process. A build application may then generate a pseudo-language build of the developing software application and/or development database to enable testing and identification of internationalization defects that would prevent effective localization of the software product for the international market.

    摘要翻译： 本文公开了用于软件应用的集成的，自动伪定位的方法和制造。 将一个或多个实用程序应用程序组成的伪定位过程集成到开发软件应用程序的构建周期中，以生成伪翻译的用户界面代码作为构建过程的一部分。 然后，构建应用程序可以生成开发的软件应用程序和/或开发数据库的伪语言构建，以便能够测试和识别将阻止软件产品在国际市场上的有效定位的国际化缺陷。

    Semiconductor device and method for manufacturing the same
    18.
    发明授权
    Semiconductor device and method for manufacturing the same 有权

    公开(公告)号：US08310005B2

    公开(公告)日：2012-11-13

    申请号：US13317781

    申请日：2011-10-28

    申请人： Yoshimitsu Murase ,  Kenya Kobayashi ,  Hideo Yamamoto ,  Atsushi Kaneko

    发明人： Yoshimitsu Murase ,  Kenya Kobayashi ,  Hideo Yamamoto ,  Atsushi Kaneko

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7813 ,  H01L29/4236 ,  H01L29/66734

    摘要： A semiconductor device includes a semiconductor layer, a first diffused region formed in the semiconductor layer, a second diffused region formed in the first diffused region, a trench formed in the semiconductor layer, a gate electrode disposed in the trench, a top surface of the gate electrode being lower than a top surface of the semiconductor layer and sagging downwards in a center thereof, a non-doped silicate glass film disposed in the trench and formed over the gate electrode, a top surface of the silicate glass film sagging downwards in a center thereof, an oxide film disposed in the trench and formed over the non-doped silicate glass film, a top surface of the oxide film sagging downwards in a center, and a source electrode formed over the semiconductor layer so that the source electrode contacts the first and second diffusion regions, and the oxide film at the top surface thereof.

    Semiconductor device having trench gate structure
    20.
    发明授权
    Semiconductor device having trench gate structure 失效
    具有沟槽栅结构的半导体器件

    公开(公告)号：US07956409B2

    公开(公告)日：2011-06-07

    申请号：US12232074

    申请日：2008-09-10

    申请人： Hideo Yamamoto ,  Kenya Kobayashi ,  Atsushi Kaneko

    发明人： Hideo Yamamoto ,  Kenya Kobayashi ,  Atsushi Kaneko

    IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

    CPC分类号： H01L29/7813 ,  H01L27/0727 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/7808

    摘要： The present invention provides a vertical MOSFET which has striped trench gate structure which can secure avalanche resistance without increasing Ron. A vertical MOSFET 100 comprises a plurality of gate trenches 7 which is arranged in stripes, an array which is sandwiched with the plurality of gate trenches 7 and includes N+ source regions 4N+ and P+ base contact regions 5P+, and a diode region (anode region 6P+) which is formed so as to contact with two gate trenches 7. The N+ source regions 4N+ and the base contact regions 5P+ are alternately arranged along a longitudinal direction of the gate trench 7. Size of the diode region (anode region 6P+) corresponds to at least one of the N+ source regions 4N+ and two of the P+ base contact regions 5P+.

    摘要翻译： 本发明提供了一种具有条纹沟槽栅极结构的垂直MOSFET，其可以在不增加Ron的情况下确保雪崩电阻。 垂直MOSFET100包括多个栅极沟槽7，栅极沟槽7被布置成阵列，该阵列夹在多个栅极沟槽7之间并包括N +源极区域4N +和P +基极接触区域5P +，二极管区域（阳极区域6P + ）形成为与两个栅极沟槽7接触.N +源极区域4N +和基极接触区域5P +沿着栅极沟槽7的纵向方向交替排列。二极管区域（阳极区域6P +）的尺寸对应于 N +源极区域4N +和P +基极接触区域5P + +中的至少一个。