公开(公告)号：US20110278595A1

公开(公告)日：2011-11-17

申请号：US13104275

申请日：2011-05-10

申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

发明人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

IPC分类号： H01L29/24 ,  C30B23/02 ,  H01L21/20 ,  B32B13/04

CPC分类号： H01L29/7802 ,  B32B9/00 ,  B32B13/04 ,  B32B2307/202 ,  B32B2307/732 ,  B32B2457/14 ,  C30B29/36 ,  C30B33/06 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02631 ,  H01L21/046 ,  H01L21/049 ,  H01L21/2007 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068

摘要： A method for manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate made of silicon carbide and a SiC substrate made of single-crystal silicon carbide; fabricating a stacked substrate by placing said SiC substrate on and in contact with a main surface of said base substrate; and connecting said base substrate and said SiC substrate to each other by heating said stacked substrate in a container to fall within a range of temperature equal to or greater than a sublimation temperature of silicon carbide constituting said base substrate. In the step of connecting said base substrate and said SiC substrate, a silicon carbide body made of silicon carbide and different from said base substrate and said SiC substrate is disposed in said container.

摘要翻译： 制造碳化硅基板的方法包括以下步骤：制备由碳化硅制成的基底基板和由单晶碳化硅制成的SiC基板; 通过将所述SiC衬底放置在所述基底衬底的主表面上并与之接触来制造堆叠衬底; 以及通过在容器中加热所述堆叠的基板而将所述基底基板和所述SiC基板彼此连接，以落入构成所述基底基板的碳化硅的升华温度以上的温度范围内。 在连接所述基底衬底和所述SiC衬底的步骤中，将由碳化硅制成并且与所述基底衬底和所述SiC衬底不同的碳化硅体设置在所述容器中。

公开(公告)号：US20110175107A1

公开(公告)日：2011-07-21

申请号：US13005714

申请日：2011-01-13

申请人： Taro NISHIGUCHI ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

发明人： Taro NISHIGUCHI ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

IPC分类号： H01L29/16

CPC分类号： H01L21/02378 ,  H01L21/02002 ,  H01L21/02529 ,  H01L21/02667 ,  H01L21/30625 ,  H01L29/1608

摘要： A base portion is made of silicon carbide and has a main surface. At least one silicon carbide layer is provided on the main surface of the base portion in a manner exposing a region of the main surface along an outer edge of the main surface. At least one protection layer is provided on this region of the main surface of the base portion along the outer edge of the main surface. Thus, a silicon carbide substrate can be polished with high in-plane uniformity.

摘要翻译： 基部由碳化硅制成并具有主表面。 至少一个碳化硅层以沿着主表面的外边缘露出主表面的区域的方式设置在基部的主表面上。 沿着主表面的外缘在基部的主表面的该区域上设置至少一个保护层。 因此，可以以高的面内均匀性抛光碳化硅衬底。

公开(公告)号：US20120070605A1

公开(公告)日：2012-03-22

申请号：US13375287

申请日：2010-09-17

申请人： Makoto Sasaki ,  Shin Harada ,  Taro Nishiguchi ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa ,  Shinsuke Fujiwara

发明人： Makoto Sasaki ,  Shin Harada ,  Taro Nishiguchi ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa ,  Shinsuke Fujiwara

IPC分类号： B32B7/04 ,  B28D5/00 ,  C30B23/02 ,  C01B31/36 ,  B32B9/04

CPC分类号： C30B29/36 ,  C30B23/00 ,  H01L21/02002 ,  Y10T428/192

摘要： An SiC ingot includes a bottom face having 4 sides; four side faces extending from the bottom face in a direction intersecting the direction of the bottom face; and a growth face connected with the side faces located at a side opposite to the bottom face. At least one of the bottom face, the side faces, and the growth face is the {0001} plane, {1-100} plane, {11-20} plane, or a plane having an inclination within 10° relative to these planes.

摘要翻译： SiC锭包括具有4个侧面的底面; 四个侧面从与底面方向相交的方向从底面延伸; 以及与位于与底面相对的一侧的侧面连接的生长面。 底面，侧面和生长面中的至少一个是{0001}面，{1-100}面，{11-20}面，或相对于这些平面倾斜10°以内的平面 。

公开(公告)号：US20120017826A1

公开(公告)日：2012-01-26

申请号：US13258126

申请日：2010-09-28

申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

发明人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

IPC分类号： C30B23/06

CPC分类号： C30B29/36 ,  C30B23/025 ,  C30B33/06 ,  H01L21/02002 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02631 ,  H01L29/1608

摘要： A supporting portion (30c) made of silicon carbide has irregularities at at least a portion of a main surface (FO). The supporting portion (30c) and at least one single crystal substrate (11) made of silicon carbide are stacked such that the backside surface (B1) of each at least one single crystal substrate (11) and the main surface (FO) of the supporting portion (30c) having irregularities formed contact each other. In order to connect the backside surface (B1) of each at least one single crystal substrate (11) to the supporting portion (30c), the supporting portion (30c) and at least one single crystal substrate (11) are heated such that the temperature of the supporting portion (30c) exceeds the sublimation temperature of silicon carbide, and the temperature of each at least one single crystal substrate (11) is below the temperature of the supporting portion (30c).

摘要翻译： 由碳化硅制成的支撑部分（30c）在主表面（FO）的至少一部分处具有凹凸。 支撑部（30c）和由碳化硅构成的至少一个单晶基板（11）被层叠，使得每个至少一个单晶基板（11）的背面（B1）和主晶面 具有形成彼此接触的凹凸的支撑部（30c）。 为了将每个至少一个单晶衬底（11）的背面（B1）连接到支撑部分（30c），支撑部分（30c）和至少一个单晶衬底（11）被加热，使得 支撑部分（30c）的温度超过碳化硅的升华温度，并且每个至少一个单晶衬底（11）的温度低于支撑部分（30c）的温度。

公开(公告)号：US20110278593A1

公开(公告)日：2011-11-17

申请号：US13104219

申请日：2011-05-10

申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

发明人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

IPC分类号： H01L29/12 ,  C30B23/02 ,  H01L21/20 ,  B32B13/04

CPC分类号： H01L29/7802 ,  C30B23/02 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02631 ,  H01L21/0475 ,  H01L21/2007 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068

摘要： A method for manufacturing a silicon carbide substrate includes the steps of: preparing a SiC substrate made of single-crystal silicon carbide; disposing a base substrate in a crucible so as to face a main surface of the SiC substrate; and forming a base layer made of silicon carbide in contact with the main surface of the SiC substrate, by heating the base substrate in the crucible to fall within a range of temperature higher than a sublimation temperature of silicon carbide constituting the base substrate. In the step of forming the base layer, a gas containing silicon is introduced into the crucible.

摘要翻译： 一种制造碳化硅衬底的方法包括以下步骤：制备由单晶碳化硅制成的SiC衬底; 将基底基板设置在坩埚内以面对SiC基板的主表面; 以及通过加热坩埚中的基底基底而形成与碳化硅基体的主表面接触的碳化硅制成的基底层，使其落入构成基底基板的碳化硅的升华温度以上的温度范围内。 在形成基层的步骤中，将含硅的气体引入坩埚中。

公开(公告)号：US08629457B2

公开(公告)日：2014-01-14

申请号：US13005719

申请日：2011-01-13

申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

发明人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

IPC分类号： H01L33/18

CPC分类号： H01L33/16 ,  H01L33/007 ,  H01L33/32

摘要： A silicon carbide substrate has a first layer facing a semiconductor layer and a second layer stacked on the first layer. Dislocation density of the second layer is higher than dislocation density of the first layer. Thus, quantum efficiency and power efficiency of a light-emitting device can both be high.

摘要翻译： 碳化硅衬底具有面向半导体层的第一层和堆叠在第一层上的第二层。 第二层的位错密度高于第一层的位错密度。 因此，发光装置的量子效率和功率效率都可以高。

公开(公告)号：US20110284873A1

公开(公告)日：2011-11-24

申请号：US13146432

申请日：2010-09-28

申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

发明人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

IPC分类号： H01L29/161

CPC分类号： H01L29/66068 ,  H01L21/02529 ,  H01L21/02609 ,  H01L21/187 ,  H01L29/7802

摘要： A silicon carbide substrate has a substrate region and a support portion. The substrate region has a first single crystal substrate. The support portion is joined to a first backside surface of the first single crystal. The dislocation density of the first single crystal substrate is lower than the dislocation density of the support portion. At least one of the substrate region and the support portion has voids.

摘要翻译： 碳化硅衬底具有衬底区域和支撑部分。 衬底区域具有第一单晶衬底。 支撑部分连接到第一单晶的第一背面。 第一单晶基板的位错密度低于支撑部的位错密度。 衬底区域和支撑部分中的至少一个具有空隙。

公开(公告)号：US20110175108A1

公开(公告)日：2011-07-21

申请号：US13005719

申请日：2011-01-13

申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

发明人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Kyoko Okita ,  Hiroki Inoue ,  Shinsuke Fujiwara ,  Yasuo Namikawa

IPC分类号： H01L33/18

CPC分类号： H01L33/16 ,  H01L33/007 ,  H01L33/32

摘要： A silicon carbide substrate has a first layer facing a semiconductor layer and a second layer stacked on the first layer. Dislocation density of the second layer is higher than dislocation density of the first layer. Thus, quantum efficiency and power efficiency of a light-emitting device can both be high.

摘要翻译： 碳化硅衬底具有面向半导体层的第一层和堆叠在第一层上的第二层。 第二层的位错密度高于第一层的位错密度。 因此，发光装置的量子效率和功率效率都可以高。

公开(公告)号：US20120061686A1

公开(公告)日：2012-03-15

申请号：US13319560

申请日：2010-04-27

申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Shinsuke Fujiwara ,  Yasuo Namikawa

发明人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada ,  Shinsuke Fujiwara ,  Yasuo Namikawa

IPC分类号： H01L29/02 ,  H01L21/762

CPC分类号： H01L29/7802 ,  C30B23/00 ,  C30B29/36 ,  C30B33/06 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/2007 ,  H01L29/045 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7395

摘要： A silicon carbide substrate allowing reduction in cost for manufacturing a semiconductor device including a silicon carbide substrate includes a base substrate composed of silicon carbide and an SiC layer composed of single crystal silicon carbide different from the base substrate and arranged on the base substrate in contact therewith. Thus, the silicon carbide substrate 1 is a silicon carbide substrate capable of making effective use of silicon carbide single crystal.

摘要翻译： 允许降低制造包括碳化硅衬底的半导体器件的成本的碳化硅衬底包括由碳化硅构成的基底衬底和由与基底基板不同的单晶碳化硅构成的SiC层，并与基底衬底接触地布置 。 因此，碳化硅衬底1是能够有效利用碳化硅单晶的碳化硅衬底。

公开(公告)号：US20120003823A1

公开(公告)日：2012-01-05

申请号：US13255314

申请日：2010-09-28

申请人： Makoto Sasaki ,  Shin Harada ,  Taro Nishiguchi ,  Kyoko Okita ,  Yasuo Namikawa

发明人： Makoto Sasaki ,  Shin Harada ,  Taro Nishiguchi ,  Kyoko Okita ,  Yasuo Namikawa

IPC分类号： H01L21/20

CPC分类号： H01L21/02378 ,  H01L21/0243 ,  H01L21/02529 ,  H01L21/02612 ,  H01L21/02614 ,  H01L21/02656 ,  H01L21/02667 ,  H01L21/047 ,  H01L29/66068

摘要： A combined substrate is prepared which has a supporting portion and first and second silicon carbide substrates. The first silicon carbide substrate has a first front-side surface and a first side surface. The second silicon carbide substrate has a second front-side surface and a second side surface. The second side surface is disposed such that a gap having an opening between the first and second front-side surfaces is formed between the first side surface and the second side surface. By introducing melted silicon from the opening into the gap, a silicon connecting portion is formed to connect the first and second side surfaces so as to close the opening. By carbonizing the silicon connecting portion, a silicon carbide connecting portion is formed.

摘要翻译： 制备具有支撑部分和第一和第二碳化硅衬底的组合衬底。 第一碳化硅衬底具有第一正面和第一侧面。 第二碳化硅衬底具有第二前侧表面和第二侧表面。 第二侧面设置成在第一侧表面和第二侧表面之间形成有在第一和第二前侧表面之间具有开口的间隙。 通过将来自开口的熔融硅引入到间隙中，形成硅连接部，以连接第一和第二侧表面以封闭开口。 通过碳化硅连接部分，形成碳化硅连接部分。