ACOUSTIC WAVE DEVICE AND FILTER
    12.
    发明申请
    ACOUSTIC WAVE DEVICE AND FILTER 有权
    声波设备和滤波器

    公开(公告)号:US20120200373A1

    公开(公告)日:2012-08-09

    申请号:US13362753

    申请日:2012-01-31

    IPC分类号: H03H9/58 H01L41/04

    摘要: An acoustic wave device including: a substrate; a piezoelectric film formed on the substrate; an lower electrode provided on a first surface of the piezoelectric film; an upper electrode provided on a second surface of the piezoelectric film opposite to the first surface; and a mass loading film having a first pattern and a second pattern in a resonance portion in which the lower electrode and the upper electrode face each other through the piezoelectric film, the first pattern having portions and the second pattern having portions interlinking the portions of the first pattern.

    摘要翻译: 一种声波装置,包括:基板; 形成在基板上的压电膜; 设置在所述压电膜的第一表面上的下电极; 设置在与第一表面相对的压电膜的第二表面上的上电极; 以及在下部电极和上部电极通过压电膜彼此面对的共振部中具有第一图案和第二图案的质量加载膜,第一图案具有部分,第二图案具有将部分 第一种模式

    ACOUSTIC WAVE DEVICE
    13.
    发明申请
    ACOUSTIC WAVE DEVICE 有权
    声波设备

    公开(公告)号:US20120104900A1

    公开(公告)日:2012-05-03

    申请号:US13240407

    申请日:2011-09-22

    IPC分类号: H01L41/083

    CPC分类号: H03H9/584 H03H9/587 H03H9/589

    摘要: An acoustic wave device includes: a first piezoelectric thin film resonator including a first lower electrode, a first upper electrode and a first piezoelectric film sandwiched between the first lower and upper electrodes; a decoupler film provided on the first upper electrode; and a second piezoelectric thin film resonator provided on the decoupler film and including a second lower electrode, a second upper electrode and a second piezoelectric film sandwiched between the second lower and upper electrodes, wherein the first piezoelectric film and the second piezoelectric film comprise aluminum nitride and include an element increasing a piezoelectric constant of the aluminum nitride.

    摘要翻译: 声波装置包括:第一压电薄膜谐振器,包括第一下电极,第一上电极和夹在第一下电极和上电极之间的第一压电薄膜; 设置在第一上电极上的去耦膜; 以及第二压电薄膜谐振器,其设置在所述去耦膜上并且包括夹在所述第二下电极和上电极之间的第二下电极,第二上电极和第二压电薄膜,其中所述第一压电薄膜和所述第二压电薄膜包括氮化铝 并且包括增加氮化铝的压电常数的元素。

    ACOUSTIC WAVE FILTER
    14.
    发明申请
    ACOUSTIC WAVE FILTER 审中-公开
    声波滤波器

    公开(公告)号:US20130033337A1

    公开(公告)日:2013-02-07

    申请号:US13556881

    申请日:2012-07-24

    IPC分类号: H03H9/54 H03H9/70

    摘要: An acoustic wave filter including piezoelectric thin film resonators, in which at least two of the piezoelectric thin film resonators including: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode located across at least a part of the piezoelectric film; a mass load film for a frequency control located in a resonance region where the lower electrode and the upper electrode face each other, and having a shape different from that of the resonance region; and a temperature compensation film having a temperature coefficient of an elastic constant opposite in sign to that of the piezoelectric film, at least a part of the temperature compensation film being located between the lower electrode and the upper electrode in the resonance region, and areas of mass load films of said at least two of the piezoelectric thin film resonators are different from each other.

    摘要翻译: 一种包括压电薄膜谐振器的声波滤波器,其中至少两个压电薄膜谐振器包括:基板; 位于所述基板上的压电薄膜; 位于所述压电膜的至少一部分的下电极和上电极; 用于频率控制的质量负载膜,位于下电极和上电极彼此面对的共振区域中,具有与谐振区域不同的形状; 以及温度补偿膜,其具有与压电膜的弹性常数相反的弹性常数的温度系数,所述温度补偿膜的至少一部分位于所述共振区域中的下部电极和上部电极之间, 所述至少两个压电薄膜谐振器的质量负载薄膜彼此不同。

    PIEZOELECTRIC THIN-FILM RESONATOR AND METHOD FOR MANUFACTURING THE SAME
    15.
    发明申请
    PIEZOELECTRIC THIN-FILM RESONATOR AND METHOD FOR MANUFACTURING THE SAME 有权
    压电薄膜共振器及其制造方法

    公开(公告)号:US20130033151A1

    公开(公告)日:2013-02-07

    申请号:US13563505

    申请日:2012-07-31

    IPC分类号: H01L41/04 H01L41/22

    摘要: A piezoelectric thin-film resonator includes: a lower electrode provided on a substrate; a piezoelectric film that is provided on the lower electrode and includes at least two layers; an upper electrode that is provided on the piezoelectric film and has a region sandwiching the piezoelectric film with the lower electrode and facing the lower electrode; and an insulating film that is provided in a region in which the lower electrode and the upper electrode face each other and between each of the at least two layers, wherein an upper face of the insulating film is flatter than a lower face of the insulating film.

    摘要翻译: 压电薄膜谐振器包括:设置在基板上的下电极; 压电膜,其设置在所述下电极上并且包括至少两层; 上部电极,其设置在所述压电膜上,并且具有将所述压电膜与所述下部电极夹在中间且与所述下部电极相对的区域; 以及绝缘膜,其设置在所述下电极和所述上电极彼此面对并且在所述至少两层中的每一个之间的区域中,其中所述绝缘膜的上表面比所述绝缘膜的下表面平坦 。

    ANTENNA DUPLEXER
    16.
    发明申请
    ANTENNA DUPLEXER 有权
    天线双机

    公开(公告)号:US20080284540A1

    公开(公告)日:2008-11-20

    申请号:US12106888

    申请日:2008-04-21

    IPC分类号: H03H9/70

    CPC分类号: H03H9/725 H03H9/0576

    摘要: An antenna duplexer is provided, which can be built with a smaller size and lower height than ever without compromising out-of-band attenuation characteristic and isolation characteristic between a transmit terminal and a receive terminal. The antenna duplexer includes a transmit filter provided between an antenna terminal and the transmit terminal, and a receive filter provided between the antenna terminal and the receive terminal. The filters are enclosed by a package, in which a ground pattern for the receive filter is separated from other ground patterns.

    摘要翻译: 提供了一种天线双工器,其可以以比以往更小的尺寸和更低的高度构建,而不会损害发射终端和接收终端之间的带外衰减特性和隔离特性。 天线双工器包括设置在天线端子和发射端子之间的发射滤波器以及设置在天线端子和接收端子之间的接收滤波器。 滤波器由封装封装,其中用于接收滤波器的接地图案与其他接地图案分离。

    DUPLEXER, COMMUNICATION MODULE, AND COMMUNICATION DEVICE
    17.
    发明申请
    DUPLEXER, COMMUNICATION MODULE, AND COMMUNICATION DEVICE 有权
    双工器,通信模块和通信设备

    公开(公告)号:US20120293276A1

    公开(公告)日:2012-11-22

    申请号:US13563510

    申请日:2012-07-31

    IPC分类号: H03H9/70 H03H9/72

    摘要: A duplexer includes an unbalanced transmitting filter; a balanced receiving filter; a transmitting port connected to the transmitting filter; and a first receiving port and a second receiving port connected to the receiving filter. The duplexer also includes an electromagnetic coupling portion connected between the transmitting port and the first receiving port and between the transmitting port and the second receiving port. The electromagnetic coupling portion adjusts the phase between electric power that flows from the transmitting port to the first receiving port and electric power that flows from the transmitting port to the second receiving port.

    摘要翻译: 双工器包括不平衡发射滤波器; 平衡接收滤波器; 连接到发送滤波器的发送端口; 以及连接到接收滤波器的第一接收端口和第二接收端口。 双工器还包括连接在发送端口和第一接收端口之间以及发送端口和第二接收端口之间的电磁耦合部分。 电磁耦合部分调节从发送端口到第一接收端口的电力之间的相位以及从发送端口流向第二接收端口的电力。

    DUPLEXER
    19.
    发明申请
    DUPLEXER 有权
    双机

    公开(公告)号:US20130127565A1

    公开(公告)日:2013-05-23

    申请号:US13610393

    申请日:2012-09-11

    IPC分类号: H03H9/72

    摘要: A duplexer includes a transmission filter and a reception filter having different passbands, wherein: first resonators that are series resonators or parallel resonators included in the transmission and reception filters so as to form a skirt characteristic at a guard band side are a temperature compensated type piezoelectric thin film resonator or a surface acoustic wave resonator using Love waves, and second resonators that form a skirt characteristic at an opposite side to the guard band are one of a temperature non-compensated type piezoelectric thin film resonator, a surface acoustic wave resonator using a lithium tantalate substrate or a substrate made by bonding a lithium tantalate substrate on a sapphire substrate, and a surface acoustic wave resonator using Love waves.

    摘要翻译: 双工器包括具有不同通带的发送滤波器和接收滤波器,其中包括在发送和接收滤波器中的串联谐振器或并联谐振器的第一谐振器在保护带侧形成裙部特性是温度补偿型压电 使用爱波的薄膜谐振器或表面声波谐振器以及与保护带相反侧形成裙部特性的第二谐振器是温度非补偿型压电薄膜谐振器之一,使用 钽酸锂基板或通过将蓝宝石基板上的钽酸锂基板接合而制成的基板和使用爱波的表面声波谐振器。

    METHOD FOR MANUFACTURING ACOUSTIC WAVE DEVICE
    20.
    发明申请
    METHOD FOR MANUFACTURING ACOUSTIC WAVE DEVICE 有权
    制造声波装置的方法

    公开(公告)号:US20120198672A1

    公开(公告)日:2012-08-09

    申请号:US13362743

    申请日:2012-01-31

    IPC分类号: H03H3/02

    摘要: A method for manufacturing an acoustic wave device includes: bonding a piezoelectric substrate to a first surface of a first support substrate; thinning the piezoelectric substrate after the bonding to thus form a piezoelectric layer; forming a first electrode on a first surface of the piezoelectric layer; forming holes in the first support substrate located below the first electrode; and bonding a second support substrate to a second surface of the first support substrate opposite to the first surface after the forming of holes.

    摘要翻译: 一种制造声波器件的方法包括:将压电基片接合到第一支撑基板的第一表面; 在接合之后使压电基板变薄从而形成压电层; 在所述压电层的第一表面上形成第一电极; 在位于第一电极下方的第一支撑基板上形成孔; 以及在形成孔之后,将第二支撑基板接合到所述第一支撑基板的与所述第一表面相对的第二表面。