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公开(公告)号：US20230406692A1
公开(公告)日：2023-12-21
申请号：US17878924
申请日：2022-08-02
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Jung-Hao Chang , Weng-Yi Chen
CPC classification number: B81B3/0021 , B81C1/00158 , B81B2201/0257 , B81B2203/0127 , B81B2203/0315 , B81C2201/0132 , B81C2201/0156 , B81C2201/0176
Abstract: A microelectromechanical system (MEMS) microphone includes a substrate, a membrane supported relative to the substrate, an opening extending through the entire thickness of the membrane, and a spacer disposed on the sidewall of the opening. The spacer protrudes beyond the top surface of the membrane.
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公开(公告)号：US10457546B2
公开(公告)日：2019-10-29
申请号：US15921203
申请日：2018-03-14
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Yuan-Sheng Lin , Weng-Yi Chen , Kuan-Yu Wang , Chih-Wei Liu
Abstract: A micro-electro-mechanical (MEMS) structure and a method for forming the same are disclosed. The MEMS structure includes a sacrificial layer, a lower dielectric film, an upper dielectric film, a plurality of through holes and a protective film. The sacrificial layer comprises an opening. The lower dielectric film is on the sacrificial layer. The upper dielectric film is on the lower dielectric film. The plurality of through holes passes through the lower dielectric film and the upper dielectric film. The protective film covers side walls of the upper dielectric film and the lower dielectric film and a film interface between the lower dielectric film and the upper dielectric film.
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公开(公告)号：US20180339901A1
公开(公告)日：2018-11-29
申请号：US15644430
申请日：2017-07-07
Applicant: United Microelectronics Corp.
Inventor： Guo-Chih Wei , Weng-Yi Chen , Shih-Wei Li
IPC: B81C1/00
Abstract: A semiconductor process including the following steps is provided. A wafer is provided. The wafer has a front side and a back side. The wafer has a semiconductor device on the front side. A protection layer is formed on the front side of the wafer. The protection layer covers the semiconductor device. A material of the protection layer includes a photoresist material. A surface hardening treatment process is performed on the protection layer. A first patterning process is performed on the back side of the wafer. The semiconductor process can effectively protect the front side of the wafer during a backside process.
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公开(公告)号：US20180057354A1
公开(公告)日：2018-03-01
申请号：US15293855
申请日：2016-10-14
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chih-Fan Hu , Chia-Wei Lee , Chang-Sheng Hsu , Weng-Yi Chen
CPC classification number: B81B7/007 , B81B3/0081 , B81B2201/0214 , B81B2201/0292 , B81B2207/012 , B81B2207/07 , G01N27/128
Abstract: A semiconductor sensor, comprising a gas-sensing device and an integrated circuit electrically connected to the gas-sensing device, is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, wherein the platinum (Pt) layer directly contacts the top surface of the tungsten layer.
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公开(公告)号：US10773953B2
公开(公告)日：2020-09-15
申请号：US15697467
申请日：2017-09-07
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Meng-Jia Lin , Yung-Hsiao Lee , Weng-Yi Chen , Shih-Wei Li , Chung-Hsien Liu
Abstract: A method of fabricating a MEMS structure includes providing a substrate comprising a logic element region and a MEMS region. Next, a logic element is formed within the logic element region. A nitrogen-containing material layer is formed to cover the logic element region and the MEMS region conformally. Then, part of the nitrogen-containing material layer within the MEMS region is removed to form at least one shrinking region. Subsequently, a dielectric layer is formed to cover the logic element region and MEMS region, and the dielectric layer fills in the shrinking region. After that, the dielectric layer is etched to form at least one releasing hole, wherein the shrinking region surrounds the releasing hole. Finally, the substrate is etched to form a chamber.
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Patent Agency Ranking
公开(公告)号：US10737932B2
公开(公告)日：2020-08-11
申请号：US16284735
申请日：2019-02-25
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Yuan-Sheng Lin , Jung-Hao Chang , Chang-Sheng Hsu , Weng-Yi Chen
Abstract: A MEMS structure includes a substrate, a dielectric layer, a membrane, a backplate, and a blocking layer. The substrate has a through-hole. The dielectric layer is disposed on the substrate and has a cavity in communication with the through-hole. The membrane has at least one vent hole, is embedded in the dielectric layer and together with the dielectric layer defines a first chamber that communicates with the through-hole. The backplate is disposed on the dielectric layer. One end of the blocking layer is embedded in the dielectric layer, and the other end of the blocking layer extends into the cavity; the blocking layer is spatially isolated from the membrane and at least partially overlaps with the at least one vent hole.
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公开(公告)号：US10112825B2
公开(公告)日：2018-10-30
申请号：US15448804
申请日：2017-03-03
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Te-Huang Chiu , Weng-Yi Chen , Kuan-Yu Wang
Abstract: A semiconductor structure and a manufacturing method for the same are disclosed. The semiconductor structure includes a MEMS region. The MEMS region includes a sensing membrane and a metal ring. The metal ring defines a cavity under the sensing membrane.
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公开(公告)号：US20180201498A1
公开(公告)日：2018-07-19
申请号：US15921203
申请日：2018-03-14
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Yuan-Sheng Lin , Weng-Yi Chen , Kuan-Yu Wang , Chih-Wei Liu
CPC classification number: B81B3/0075 , B81B2201/0257 , B81B2207/115 , B81C1/00158 , B81C1/00785 , H04R19/005 , H04R19/04 , H04R2201/003 , H04R2307/027
Abstract: A micro-electro-mechanical (MEMS) structure and a method for forming the same are disclosed. The MEMS structure includes a sacrificial layer, a lower dielectric film, an upper dielectric film, a plurality of through holes and a protective film. The sacrificial layer comprises an opening. The lower dielectric film is on the sacrificial layer. The upper dielectric film is on the lower dielectric film. The plurality of through holes passes through the lower dielectric film and the upper dielectric film. The protective film covers side walls of the upper dielectric film and the lower dielectric film and a film interface between the lower dielectric film and the upper dielectric film.
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公开(公告)号：US09961450B2
公开(公告)日：2018-05-01
申请号：US15246561
申请日：2016-08-25
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chang-Sheng Hsu , Weng-Yi Chen , En-Chan Chen , Shih-Wei Li , Guo-Chih Wei
CPC classification number: H04R17/025 , B81B3/0021 , B81B2201/0257 , B81B2203/0127 , B81B2203/0315 , B81C1/00158 , B81C2201/013 , H04R1/06 , H04R7/04 , H04R7/20 , H04R17/02 , H04R19/005 , H04R31/003 , H04R31/006 , H04R2201/003
Abstract: A piezoresistive microphone includes a substrate, an insulating layer, and a polysilicon layer. A first pattern is disposed within the polysilicon layer. The first pattern includes numerous first opening. A second pattern is disposed within the polysilicon layer. The second pattern includes numerous second openings. The first pattern surrounds the second pattern. Each first opening and each second opening are staggered. A first resistor is disposed in the polysilicon and between the first pattern and the second pattern. The first resistor is composed of numerous first heavily doped regions and numerous first lightly doped regions. The first heavily doped regions and the first lightly doped regions are disposed in series. The first heavily doped region and the first lightly doped region are disposed alternately. A cavity is disposed in the insulating layer and the substrate.
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公开(公告)号：US09950920B2
公开(公告)日：2018-04-24
申请号：US15003913
申请日：2016-01-22
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Yuan-Sheng Lin , Weng-Yi Chen , Kuan-Yu Wang , Chih-Wei Liu
CPC classification number: B81B3/0075 , B81B2201/0257 , B81B2207/115 , B81C1/00158 , B81C1/00785 , H04R19/005 , H04R19/04 , H04R2201/003 , H04R2307/027
Abstract: A micro-electro-mechanical (MEMS) structure and a method for forming the same are disclosed. The MEMS structure includes a sacrificial layer, a lower dielectric film, an upper dielectric film, a plurality of through holes and a protective film. The sacrificial layer comprises an opening. The lower dielectric film is on the sacrificial layer. The upper dielectric film is on the lower dielectric film. The plurality of through holes passes through the lower dielectric film and the upper dielectric film. The protective film covers side walls of the upper dielectric film and the lower dielectric film and a film interface between the lower dielectric film and the upper dielectric film.
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