公开(公告)号：US20180208460A1

公开(公告)日：2018-07-26

申请号：US15448804

申请日：2017-03-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Te-Huang Chiu ,  Weng-Yi Chen ,  Kuan-Yu Wang

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00246 ,  B81B7/0006 ,  B81B2201/0214 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/0384 ,  B81B2203/0392 ,  B81B2203/04 ,  B81C2201/014 ,  B81C2203/0735 ,  B81C2203/0771

Abstract: A semiconductor structure and a manufacturing method for the same are disclosed. The semiconductor structure includes a MEMS region. The MEMS region includes a sensing membrane and a metal ring. The metal ring defines a cavity under the sensing membrane.

公开(公告)号：US10112825B2

公开(公告)日：2018-10-30

申请号：US15448804

申请日：2017-03-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Te-Huang Chiu ,  Weng-Yi Chen ,  Kuan-Yu Wang

IPC: B81B7/00 ,  B81C1/00

Abstract: A semiconductor structure and a manufacturing method for the same are disclosed. The semiconductor structure includes a MEMS region. The MEMS region includes a sensing membrane and a metal ring. The metal ring defines a cavity under the sensing membrane.

公开(公告)号：US20170271529A1

公开(公告)日：2017-09-21

申请号：US15099610

申请日：2016-04-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tzung-Han Tan ,  Chang-Sheng Hsu ,  Meng-Jia Lin ,  Te-Huang Chiu

IPC: H01L31/024 ,  H01L31/0352 ,  H01L31/105 ,  H01L31/18 ,  H01L31/0232 ,  H01L31/107

CPC classification number: H01L31/024 ,  H01L31/02327 ,  H01L31/035281 ,  H01L31/105 ,  H01L31/107 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547

Abstract: An avalanche photodetector device includes a substrate having a front side and a back side, an avalanche photo detector structure disposed on the front side of the substrate, a plurality of heat sinks disposed on the back side of the substrate, and a plurality of reflecting islands disposed on the back side of the substrate.

公开(公告)号：US10427935B2

公开(公告)日：2019-10-01

申请号：US16137914

申请日：2018-09-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Te-Huang Chiu ,  Weng-Yi Chen ,  Kuan-Yu Wang

IPC: B81B7/00 ,  B81C1/00

Abstract: A manufacturing method for a semiconductor structure is disclosed. The semiconductor structure includes a MEMS region. The MEMS region includes a sensing membrane and a metal ring. The metal ring defines a cavity under the sensing membrane.

公开(公告)号：US20190016591A1

公开(公告)日：2019-01-17

申请号：US16137914

申请日：2018-09-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Te-Huang Chiu ,  Weng-Yi Chen ,  Kuan-Yu Wang

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00246 ,  B81B7/0006 ,  B81B2201/0214 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/0384 ,  B81B2203/0392 ,  B81B2203/04 ,  B81C1/00428 ,  B81C2201/014 ,  B81C2203/0735 ,  B81C2203/0771

Abstract: A manufacturing method for a semiconductor structure is disclosed. The semiconductor structure includes a MEMS region. The MEMS region includes a sensing membrane and a metal ring. The metal ring defines a cavity under the sensing membrane.

公开(公告)号：US09905711B2

公开(公告)日：2018-02-27

申请号：US15099610

申请日：2016-04-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tzung-Han Tan ,  Chang-Sheng Hsu ,  Meng-Jia Lin ,  Te-Huang Chiu

IPC: H01L31/024 ,  H01L31/0232 ,  H01L31/0352 ,  H01L31/105 ,  H01L31/18 ,  H01L31/107

CPC classification number: H01L31/024 ,  H01L31/02327 ,  H01L31/035281 ,  H01L31/105 ,  H01L31/107 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547

Abstract: An avalanche photodetector device includes a substrate having a front side and a back side, an avalanche photo detector structure disposed on the front side of the substrate, a plurality of heat sinks disposed on the back side of the substrate, and a plurality of reflecting islands disposed on the back side of the substrate.