公开(公告)号：US20160160387A1

公开(公告)日：2016-06-09

申请号：US14997180

申请日：2016-01-15

申请人： Veeco Instruments Inc.

发明人： William E. Quinn ,  Alexander Gurary ,  Ajit Paranjpe ,  Maria D. Ferreira ,  Roger P. Fremgen ,  Eric A. Armour

IPC分类号： C30B25/02 ,  C30B25/10 ,  H01L21/677 ,  C30B25/14 ,  C30B29/40 ,  H01L21/02 ,  C30B25/08 ,  C30B25/12

摘要： A linear cluster deposition system includes a plurality of reaction chambers positioned in a linear horizontal arrangement. First and second reactant gas manifolds are coupled to respective process gas input port of each of the reaction chambers. An exhaust gas manifold having a plurality of exhaust gas inputs is coupled to the exhaust gas output port of each of the plurality of reaction chambers. A substrate transport vehicle transports at least one of a substrate and a substrate carrier that supports at least one substrate into and out of substrate transfer ports of each of the reaction chambers. At least one of a flow rate of process gas into the process gas input port of each of the reaction chambers and a pressure in each of the reaction chambers being chosen so that process conditions are substantially the same in at least two of the reaction chambers.

摘要翻译： 线性簇沉积系统包括以线性水平布置定位的多个反应室。 第一和第二反应气体歧管连接到每个反应室的相应工艺气体输入口。 具有多个排气输入的废气歧管与多个反应室中的每一个的废气输出端口连接。 基板输送车辆将基板和基板载体中的至少一个输送到每个反应室的基板输送口中并至少支撑至少一个基板。 选择每个反应室的工艺气体进入工艺气体输入口的流量和每个反应室中的压力中的至少一个，使得工艺条件在至少两个反应室中基本相同。

公开(公告)号：US20140261187A1

公开(公告)日：2014-09-18

申请号：US13840164

申请日：2013-03-15

申请人： Veeco Instruments, Inc.

发明人： Sandeep Krishnan ,  Wiliam E. Quinn ,  Jeffery S. Montgomery ,  Joshua Mangum ,  Lukas Urban ,  Alexander Gurary

IPC分类号： C30B25/12 ,  B23P19/04

CPC分类号： C30B25/12 ,  B23P19/04 ,  C23C16/4584 ,  C23C16/4585 ,  H01L21/68728 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771 ,  Y10T29/49826

摘要： A wafer carrier and methods of making the same for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition. The wafer carrier includes wafer retention pockets recessed in its body. A thermally-insulating spacer is situated at least partially in the at least one wafer retention pocket and arranged to maintain a spacing between the peripheral wall surface and the wafer, the spacer being constructed from a material having a thermal conductivity less than a thermal conductivity of the wafer carrier such that the spacer limits heat conduction from portions of the wafer carrier body to the wafer. The wafer carrier further includes a spacer retention feature that engages with the spacer and includes a surface oriented to prevent centrifugal movement of the spacer when subjected to rotation about the central axis.

摘要翻译： 一种晶片载体及其制造方法，用于通过化学气相沉积在一个或多个晶片上生长外延层的系统中。 晶片载体包括凹入其体内的晶片保留孔。 隔热隔离物至少部分地位于至少一个晶片保持袋中，并且被布置成保持周壁表面和晶片之间的间隔，该隔离物由导热率小于热导率的材料构成 晶片载体使得间隔物限制从晶片载体的部分到晶片的热传导。 晶片载体还包括间隔件保持部件，其与间隔件接合并且包括定向成防止间隔件围绕中心轴旋转时的离心运动的表面。

公开(公告)号：USD921431S1

公开(公告)日：2021-06-08

申请号：US29685939

申请日：2019-04-01

申请人： Veeco Instruments, Inc.

设计人： Sandeep Krishnan ,  Bojan Mitrovic ,  Aniruddha Bagchi ,  Alexander Gurary ,  Chenghung Paul Chang ,  Ian Kunsch ,  Matthew J. Van Doren

公开(公告)号：USD858469S1

公开(公告)日：2019-09-03

申请号：US29641930

申请日：2018-03-26

申请人： Veeco Instruments Inc.

设计人： Sandeep Krishnan ,  Yuliy Rashkovsky ,  Alexander Gurary ,  Leo Chin ,  Mandar Deshpande

公开(公告)号：US20140326186A1

公开(公告)日：2014-11-06

申请号：US14332583

申请日：2014-07-16

申请人： Veeco Instruments, Inc.

发明人： Ajit Paranjpe ,  Alexander Gurary ,  William Quinn

IPC分类号： C30B25/14 ,  C30B25/12

CPC分类号： C30B25/14 ,  C30B25/10 ,  C30B25/12 ,  C30B35/00

摘要： A VPE reactor is improved by providing temperature control to within 0.5° C., and greater process gas uniformity via novel reactor shaping, unique wafer motion structures, improvements in thermal control systems, improvements in gas flow structures, improved methods for application of gas and temperature, and improved control systems for detecting and reducing process variation.

摘要翻译： 通过提供温度控制在0.5℃以内，通过新型的反应器成型，独特的晶片运动结构，热控制系统的改进，气流结构的改进，改进的气体应用方法和 温度和改进的控制系统，用于检测和减少过程变化。

公开(公告)号：US20240175132A1

公开(公告)日：2024-05-30

申请号：US18519476

申请日：2023-11-27

申请人： VEECO INSTRUMENTS INC.

发明人： Ajit Paranjpe ,  Alexander Gurary ,  Bojan Mitrovic

IPC分类号： C23C16/458 ,  C23C16/448 ,  C23C16/455

CPC分类号： C23C16/4584 ,  C23C16/4481 ,  C23C16/455

摘要： A multi-wafer metal organic chemical vapor deposition system in which adjacent wafers positioned within the system rotate about their own axes, including a reaction chamber comprising an exhaust system including a peripheral port, a multi-wafer carrier comprising a wafer carrier body and a plurality of wafer carrier discs supported within the wafer carrier body, wherein adjacent wafer carrier discs of the plurality wafer carrier discs are configured and the wafer carrier body are configured to rotate at different speeds, a multi-zone injection block positioned over the wafer carrier body, a central gas port positioned in the center of the wafer carrier body functions as a gas exhaust, and a multi-zone heater assembly positioned beneath the multi-wafer carrier.

公开(公告)号：US20210095374A1

公开(公告)日：2021-04-01

申请号：US16868082

申请日：2020-05-06

申请人： Veeco Instruments, Inc.

发明人： Sandeep Krishnan ,  Bojan Mitrovic ,  Mandar Deshpande ,  Alexander Gurary ,  Aniruddha Bagchi

IPC分类号： C23C16/458 ,  C30B25/12

摘要： A self-centering substrate carrier system for a chemical vapor deposition reactor includes a substrate carrier chosen to at least partially support a wafer for CVD processing and that comprises a beveled surface. A rotating tube comprising a beveled surface that matches the beveled surface of the substrate carrier, where a shape and dimensions of a cross section of the substrate carrier are chosen such that a center of mass of the substrate carrier is positioned a distance that is below a plane of contact defined by where a rim of substrate carrier contacts a rim of the rotating tube.

公开(公告)号：USD863239S1

公开(公告)日：2019-10-15

申请号：US29641931

申请日：2018-03-26

申请人： Veeco Instruments Inc.

设计人： Sandeep Krishnan ,  Yuliy Rashkovsky ,  Alexander Gurary ,  Leo Chin ,  Mandar Deshpande

公开(公告)号：USD860147S1

公开(公告)日：2019-09-17

申请号：US29641927

申请日：2018-03-26

申请人： Veeco Instruments Inc.

设计人： Sandeep Krishnan ,  Yuliy Rashkovsky ,  Alexander Gurary ,  Leo Chin ,  Mandar Deshpande

公开(公告)号：US20140360430A1

公开(公告)日：2014-12-11

申请号：US14297244

申请日：2014-06-05

申请人： Veeco Instruments, Inc.

发明人： Eric Armour ,  Sandeep Krishnan ,  Alex Zhang ,  Bojan Mitrovic ,  Alexander Gurary

IPC分类号： C30B25/10 ,  C30B25/12

CPC分类号： C30B25/12 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  C30B25/105 ,  Y10T29/49826

摘要： A wafer carrier assembly for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition (CVD), the wafer carrier assembly includes a wafer carrier body formed symmetrically about a central axis, and including a generally planar top surface that is situated perpendicularly to the central axis and a planar bottom surface that is parallel to the top surface. At least one wafer retention pocket is recessed in the wafer carrier body from the top surface. Each of the at least one wafer retention pocket includes a floor surface and a peripheral wall surface that surrounds the floor surface and defines a periphery of that wafer retention pocket. At least one thermal control feature includes an interior cavity or void formed in the wafer carrier body and is defined by interior surfaces of the wafer carrier body.

摘要翻译： 一种用于通过化学气相沉积（CVD）在一个或多个晶片上生长外延层的系统的晶片载体组件，晶片载体组件包括围绕中心轴线对称地形成的晶片载体主体，并且包括大致平坦的顶表面， 垂直于中心轴定位，平面底面平行于顶面。 至少一个晶片保留袋从顶表面凹陷在晶片载体主体中。 所述至少一个晶片保留袋中的每一个包括底板表面和围绕所述地板表面并限定所述晶片保持袋的周边的周壁表面。 至少一个热控制特征包括形成在晶片载体主体中并由晶片载体主体的内表面限定的内腔或空隙。