摘要:
A cold-cathode ion source with a closed-loop ion-emitting slit which is provided with means for generating a cyclically-variable, e.g., alternating or pulsating electric or magnetic field in an anode-cathode space. These means may be made in the form of an alternating-voltage generator which generates alternating voltage on one of the cathode parts that form the ion-emitting slit, whereas the other slit-forming part is grounded. The alternating voltage deviates the ion beam in the slit with the same frequency of the alternating voltage. In accordance with another embodiment, the aforementioned means may be an electromagnetic coil which generates a magnetic field which passes through the ion-emitting slit, thus acting on the condition of the spatial-charge formation and, hence, on concentration of ions in the ion beam. The cold-cathode ion source may be of any type, i.e., with the ion beam emitted in the direction perpendicular to the direction of drift of electrons in the ion-emitting slit or with the direction of emission of the beam which coincides with the direction of electron drift.
摘要:
Disclosed are methods of positioning a magnetic drug carrier particle within the body of a subject comprising placing an article within the body of the subject or external to the body of a subject; inserting a magnetic drug carrier particle into the body of the subject, and applying an external magnetic field to the article, thereby causing the magnetic drug carrier particle to be attracted to the article. Also disclosed are articles, systems, and kits that can be used in the disclosed methods.
摘要:
A hydrogen storage material having improved hydrogen absorbtion and desorption kinetics is provided by adding graphite to a complex hydride such as a metal-doped alanate, i.e., NaAlH4. The incorporation of graphite into the complex hydride significantly enhances the rate of hydrogen absorbtion and desorption and lowers the desorption temperature needed to release stored hydrogen.
摘要:
A method for combined treatment of an object simultaneously with an ion beam and a magnetron plasma consists in that an object, e.g., a semiconductor substrate, is treated with ions of a working gas emitted from an ion-beam source and with particles of a sputterable material directed toward the object in the same direction as the ion beam. The method is carried our by means of an apparatus that comprises a combination of a sputtering magnetron with an ion-beam source. According to several embodiments, the cathode of the ion source is separated into two parts electrically isolated from each other by a closed-loop ion-emitting slit and by isolation pads. The sputterable target is placed either onto the entire cathode or onto part thereof which is charged negatively with respect to another part which is grounded. During the operation of the apparatus, ion beam emitted from the ion source acts as a viral anode with respect to the magnetron target. As a result, the efficiency and versatility of treatment is improved, and the combined apparatus has smaller dimensions and less expensive than an ion source and magnetron used separately.
摘要:
A universal cold-cathode type ion source with a closed-loop electron drifting source and with an ion-beam propagation direction perpendicular to the plane of electron drifting is intended for uniformly treating stationary or moveable objects with such processes as cleaning, activation, polishing, thin-film coating, or etching. The ion source of the invention allows adjustment of beam parameters and configurations and has an ion emitting slit of an adjustable geometry. In one embodiment, the adjustment is carried out by changing the width of the slit by shifting moveable parts of the cathode in the direction perpendicular to the direction of the ion beam. In another embodiment the slit configuration is adjusted by shifting a moveable part of the cathode in the direction of the beam propagation. The invention also provides a method for adjusting the shape and configuration of the ion beam with respect to the object to be treated. The adjustment can be performed during the operation of the ion beam while observing the beam through a sealed transparent window of the vacuum chamber.
摘要:
The coil end-turn segments of a generator exciter rotor are retained using an end-turn retention assembly that includes an inner band and an outer band. The inner band is located around at least a portion of each of the end-turn segments and has two ends. The outer peripheral surface of the inner band is tapered such that the thickness of the inner band varies between its ends. The outer band is located around the inner band and also has two ends. The inner peripheral surface of the outer band is tapered in a fashion that is reverse to that of the inner band outer surface, and such that the outer band thickness varies between its ends. By forming oppositely configured tapers in the inner and outer bands, the outer bands will remain in place and not migrate axially away from the lamination core during exciter rotor rotation.
摘要:
A multiple-beam ion-beam assembly consisting of two or more concentrically arranged ring-shaped ion-beam sources having ion-beam slits that emit a plurality of ion beams which overlap on the surface being treated and thus ensure uniformity in distribution of ion currents on the treated surface. Since the ion-beam assembly consists of a plurality of individual source, uniform treatment can be performed on a large surface area. Several embodiments of the invention cover the systems with individual sources adjustable with respect to one another, with an oblique angle of incidence of beams emitted from individual source, and with combination of oblique angles and adjustable sources.
摘要:
A combined ion-source and sputtering magnetron apparatus of the invention comprises a vacuum working chamber that contains a sputtering magnetron, an object to be treated fixed inside the housing of the chamber, and an ion-beam source installed within the working chamber between the object and the sputtering magnetron. In a preferred embodiment, the ion source is a cold-cathode ion source with a closed loop ion-emitting slit and drift of electrons in crossed electric and magnetic fields. The ion source emits the ion beam in the radial inward or outward direction onto the surface of the magnetron target at an oblique angle to the target surface. The bombardment of the target surface with the ion beam generates a large amount of sputtered particles. In addition, the ion bombardment forms a large amount of secondary electrons which are accelerated in the direction away from the target and are held in the crossed electric and magnetic fields of the magnetron target. These electrons ionize molecules of a working gas and forms a plasma. Ions are extracted from the plasma towards the target and sputter its material. This process is maintained in a steady mode. The apparatus is shown in various embodiments including a conveyor treatment.