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公开(公告)号：US06927015B2
公开(公告)日：2005-08-09
申请号：US10920762
申请日：2004-08-18
申请人： Mahmoud M. Khojasteh , Timothy M. Hughes , Ranee W. Kwong , Pushkara Rao Varanasi , William R. Brunsvold , Margaret C. Lawson , Robert D. Allen , David R. Medeiros , Ratnam Sooriyakumaran , Phillip Brock
发明人： Mahmoud M. Khojasteh , Timothy M. Hughes , Ranee W. Kwong , Pushkara Rao Varanasi , William R. Brunsvold , Margaret C. Lawson , Robert D. Allen , David R. Medeiros , Ratnam Sooriyakumaran , Phillip Brock
IPC分类号： C08F30/08 , C08F32/00 , C08F230/08 , C08K5/41 , C08K5/54 , C08L43/04 , C08L45/00 , G03F7/004 , G03F7/038 , G03F7/039 , G03F7/075 , G03F7/09 , G11B5/31 , H01L21/027 , G03F7/40 , G03F7/11
CPC分类号： G03F7/094 , G03F7/0045 , G03F7/0382 , G03F7/0395 , G03F7/0758 , G11B5/3163
摘要： Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.
摘要翻译： 适用于形成用于多层平版印刷工艺的平坦化底层的组合物的特征在于（A）含有（i）环醚部分，（ii）饱和多环部分和（iii）不需要单独交联剂的组合物的芳族部分的聚合物 ，或（B）含有：（i）饱和多环部分的聚合物，和（ii）需要单独交联剂的组合物的芳族部分。 该组合物提供优异的光学，机械和蚀刻选择性。 组合物在使用波长小于200nm的辐射的光刻工艺中特别有用，以配置下层材料层。
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12.发明授权公开(公告)号：US06756180B2
公开(公告)日：2004-06-29
申请号：US10278178
申请日：2002-10-22
IPC分类号： G03F7004
CPC分类号： G03F7/0395 , G03F7/0046 , Y10S430/108
摘要： Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation (and possibly other radiation) and are developable to form resist structures of improved development characteristics, improved etch resistance, and reduced post-exposure bake sensitivity are enabled by the use of resist compositions containing an imaging polymer having cyclic olefin monomeric units respectively having pendant, acid-labile protecting moieties, lactone moieties and fluoroalcohol moieties. The lactone moiety is preferably a pendant lactone ester.
摘要翻译： 通过使用抗蚀剂组合物可实现酸催化的正抗蚀剂组合物，其可以用193nm辐射（和可能的其它辐射）成像并且可显影以形成改进的显影特性，改进的耐蚀刻性和降低的曝光后烘烤灵敏度的抗蚀剂结构 其含有分别具有侧链，酸不稳定保护部分，内酯部分和氟代醇部分的环烯烃单体单元的成像聚合物。 内酯部分优选为侧链内酯。
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公开(公告)号：US06627391B1
公开(公告)日：2003-09-30
申请号：US09639785
申请日：2000-08-16
申请人： Hiroshi Ito , Pushkara Rao Varanasi
发明人： Hiroshi Ito , Pushkara Rao Varanasi
IPC分类号： G03C556
CPC分类号： G03F7/0395 , G03F7/0045
摘要： Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation and are developable to form resist structures of high resolution and high etch resistance are enabled by the use of a combination of (a) an imaging polymer comprising a monomer selected from the group consisting of a cyclic olefin, an acrylate and a methacrylate, (b) a radiation-sensitive acid generator, and (c) a lactone additive. The lactone additive preferably contains at least 10 carbon atoms and more preferably at least one saturated alicyclic moiety. The imaging polymer is preferably a cyclic olefin polymer.
摘要翻译： 可以用193nm辐射成像并可显影以形成高分辨率和高耐蚀刻性的抗蚀剂结构的酸催化正性抗蚀剂组合物通过使用（a）包含选自以下的单体的成像聚合物的组合来实现： 的环烯烃，丙烯酸酯和甲基丙烯酸酯，（b）辐射敏感性酸产生剂，和（c）内酯添加剂。 内酯添加剂优选含有至少10个碳原子，更优选含有至少一个饱和脂环部分。 成像聚合物优选为环状烯烃聚合物。
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公开(公告)号：US06420503B1
公开(公告)日：2002-07-16
申请号：US09497846
申请日：2000-02-03
申请人： Saikumar Jayaraman , Richard Vicari , Larry F. Rhodes , Pushkara Rao Varanasi , Thomas I. Wallow , Ratnam Sooriyakumaran , Robert D. Allen , Richard A. DiPietro , Hiroshi Ito , Juliann Opitz
发明人： Saikumar Jayaraman , Richard Vicari , Larry F. Rhodes , Pushkara Rao Varanasi , Thomas I. Wallow , Ratnam Sooriyakumaran , Robert D. Allen , Richard A. DiPietro , Hiroshi Ito , Juliann Opitz
IPC分类号： C08F2806
摘要： The invention is directed to polymers containing a repeating unit derived from a norbornene sulfonamide. These may be addition polymers which include copolymers with one or more comonomers such as norbornene, ethylene, an acrylate or sulfur dioxide or carbon monoxide. Said monomers may be polymerized using single or multicomponent Group VIII catalysts. The norbornene sulfonamides can also form ROMP polymers using known metathesis catalysts. Preferably the ROMP polymers may be hydrogenated to give more stable polymers.
摘要翻译： 本发明涉及含有衍生自降冰片烯磺酰胺的重复单元的聚合物。 这些可以是加成聚合物，其包括与一种或多种共聚单体如降冰片烯，乙烯，丙烯酸酯或二氧化硫或一氧化碳的共聚物。 所述单体可以使用单组分或多组分VIII族催化剂进行聚合。 降冰片烯磺酰胺也可以使用已知的复分解催化剂形成ROMP聚合物。 优选地，ROMP聚合物可以被氢化以得到更稳定的聚合物。
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15.发明授权
公开(公告)号：US6124074A
公开(公告)日：2000-09-26
申请号：US266341
申请日：1999-03-11
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/115
摘要： Acid-catalyzed positive photoresist compositions which are imageable with 193 nm radiation and are developable to form photoresist structures of high resolution and high etch resistance are enabled by the use of a combination of cyclic olefin polymer, photosensitive acid generator and a hydrophobic non-steroidal multi-alicyclic component containing plural acid labile linking groups. The cyclic olefin polymers preferably contain i) cyclic olefin units having polar functional moieties, ii) cyclic olefin units having acid labile moieties that inhibit solubility in aqueous alkaline solutions.
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16.发明授权Developable bottom antireflective coating compositions especially suitable for ion implant applications 失效可开发的底部抗反射涂料组合物，特别适用于离子注入应用公开(公告)号：US08557501B2
公开(公告)日：2013-10-15
申请号：US13425903
申请日：2012-03-21
CPC分类号： G03F7/091 , G03F7/0392 , G03F7/0397
摘要： Compositions characterized by the presence of an aqueous base-soluble polymer having aromatic moieties and aliphatic alcohol moieties have been found which are especially useful as developable bottom antireflective coatings in 193 nm lithographic processes. The compositions enable improved lithographic processes which are especially useful in the context of subsequent ion implantation or other similar processes where avoidance of aggressive antireflective coating removal techniques is desired.
摘要翻译： 已经发现特征在于具有芳族部分和脂族醇部分的水溶性碱溶性聚合物的存在的组合物，其特别用作193nm平版印刷方法中的可显影底部抗反射涂层。 该组合物能够改进光刻过程，其在随后的离子注入或其它类似方法的背景下是特别有用的，其中需要避免侵蚀性抗反射涂层去除技术。
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17.发明申请DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITIONS ESPECIALLY SUITABLE FOR ION IMPLANT APPLICATIONS 失效可开发的底部抗反射涂料组合物特别适用于离子植入应用公开(公告)号：US20120178029A1
公开(公告)日：2012-07-12
申请号：US13425903
申请日：2012-03-21
IPC分类号： G03F7/00
CPC分类号： G03F7/091 , G03F7/0392 , G03F7/0397
摘要： Compositions characterized by the presence of an aqueous base-soluble polymer having aromatic moieties and aliphatic alcohol moieties have been found which are especially useful as developable bottom antireflective coatings in 193 nm lithographic processes. The compositions enable improved lithographic processes which are especially useful in the context of subsequent ion implantation or other similar processes where avoidance of aggressive antireflective coating removal techniques is desired.
摘要翻译： 已经发现特征在于具有芳族部分和脂族醇部分的水溶性碱溶性聚合物的存在的组合物，其特别用作193nm平版印刷方法中的可显影底部抗反射涂层。 该组合物能够改进光刻过程，其在随后的离子注入或其它类似方法的背景下是特别有用的，其中需要避免侵蚀性抗反射涂层去除技术。
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18.发明申请SELF-FORMING TOP ANTI-REFLECTIVE COATING COMPOSITIONS AND, PHOTORESIST MIXTURES AND METHOD OF IMAGING USING SAME 有权自形成顶部防反射涂料组合物和光刻胶混合物及其成像方法公开(公告)号：US20100248145A1
公开(公告)日：2010-09-30
申请号：US12409738
申请日：2009-03-24
CPC分类号： C08F212/34 , C08F212/32 , C08F220/22 , C08F220/26 , C08F220/28 , G03F7/0046 , G03F7/0392 , G03F7/091
摘要： A composition of matter. The composition of matter includes a polymer having an ethylenic backbone and comprising a first monomer having an aromatic moiety, a second monomer having a base soluble moiety or an acid labile protected base soluble moiety, and a third monomer having a fluoroalkyl moiety. Also a photoresist formulation including the composition of matter and a method of imaging using the photoresist formulation including the composition of matter.
摘要翻译： 物质的组成。 物质的组成包括具有乙烯主链并包含具有芳族部分的第一单体，具有碱可溶部分的第二单体或酸不稳定保护基可溶部分的第一单体和具有氟代烷基部分的第三单体的聚合物。 还包括包含物质组合物的光致抗蚀剂制剂和使用包含物质组成的光致抗蚀剂制剂的成像方法。
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19.发明授权Positive photoresist composition with a polymer including a fluorosulfonamide group and process for its use 有权具有包含氟磺酰胺基团的聚合物的正性光致抗蚀剂组合物及其使用方法公开(公告)号：US07651831B2
公开(公告)日：2010-01-26
申请号：US12136163
申请日：2008-06-10
申请人： Wenjie Li , Pushkara Rao Varanasi
发明人： Wenjie Li , Pushkara Rao Varanasi
CPC分类号： G03F7/0397 , G03F7/0046 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A positive photoresist composition comprises a radiation sensitive acid generator, and a polymer that includes a first repeating unit derived from a sulfonamide monomer including a fluorosulfonamide functionality, a second repeating unit having a pendant acid-labile moiety, and a third repeating unit having a lactone functionality. The positive photoresist composition may be used to form patterned features on a substrate, such as those used in the manufacture of a semiconductor device.
摘要翻译： 正性光致抗蚀剂组合物包含辐射敏感性酸产生剂和包含衍生自包含氟磺酰胺官能团的磺酰胺单体的第一重复单元的聚合物，具有侧酸不稳定部分的第二重复单元和具有内酯的第三重复单元 功能。 正光致抗蚀剂组合物可以用于在基底上形成图案化的特征，例如用于制造半导体器件的那些。
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公开(公告)号：US07129016B2
公开(公告)日：2006-10-31
申请号：US10987540
申请日：2004-11-12
CPC分类号： G03F7/40 , G03F7/0397
摘要： Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation are obtained using a polymer having acrylate/methacrylate monomeric units comprising a naphthol ester group. The resist may optionally contain polymer having acrylate/methacrylate monomeric units with fluorine-containing functional groups. The resists containing the polymer having acrylate/methacrylate monomeric units comprising a naphthol ester group have an improved process window, including improved etch resistance and reduced swelling compared to conventional fluorine-containing 193 nm resist.
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