公开(公告)号：US08456460B2

公开(公告)日：2013-06-04

申请号：US12562317

申请日：2009-09-18

申请人： Tsutomu Tanaka ,  Makoto Takatoku ,  Michiru Senda ,  Keiichiro Ishihara

发明人： Tsutomu Tanaka ,  Makoto Takatoku ,  Michiru Senda ,  Keiichiro Ishihara

IPC分类号： G06F3/038

CPC分类号： H01L27/1446 ,  H01L31/145

摘要： The present invention provides a sensor element including two diode elements connected in series to each other, and a capacitive element having one end connected to a junction point between the two diode elements. Each of the diode elements includes a semiconductor layer having a p-type semiconductor region and an n-type semiconductor region facing each other in an in-plane direction, an anode electrode connected to the p-type semiconductor region, a cathode electrode connected to the n-type semiconductor region, a gate insulting film adjoining the semiconductor layer in a stacking direction, and a gate electrode facing the semiconductor layer with the gate insulating film in between.

摘要翻译： 本发明提供一种传感器元件，其包括彼此串联连接的两个二极管元件，以及电容元件，其一端连接到两个二极管元件之间的接合点。 每个二极管元件包括具有p型半导体区域和在面内方向上彼此相对的n型半导体区域的半导体层，连接到p型半导体区域的阳极电极，连接到 n型半导体区域，在层叠方向上邻接半导体层的栅极绝缘膜以及面对半导体层的栅极电极与栅极绝缘膜之间。

公开(公告)号：US08619208B2

公开(公告)日：2013-12-31

申请号：US12530801

申请日：2008-09-18

申请人： Dharam Pal Gosain ,  Tsutomu Tanaka ,  Makoto Takatoku

发明人： Dharam Pal Gosain ,  Tsutomu Tanaka ,  Makoto Takatoku

IPC分类号： G02F1/136 ,  G02F1/13

CPC分类号： H01L27/1222 ,  G02F1/1368 ,  G02F2001/13312 ,  G06F3/0412 ,  G06F3/0421 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/66765

摘要： In the case of forming switching elements and light sensor elements over the same substrate, an increase in the film thickness of active layers in an attempt to enhance the sensitivity of the light sensor elements would adversely affect the characteristics of the switching elements (TFTs). In a configuration of a display in which a channel layer 25 for constituting thin film transistors to form the switching elements for pixels and a photoelectric conversion layer 35 for constituting the light sensor elements are provided over a gate insulating film 24 on a glass substrate 5 to be provided with a plurality of pixels arranged in a matrix pattern, the photoelectric conversion layer 35 is formed to be thicker than the channel layer 25, and/or the photoelectric conversion layer 35 is formed of a material different from the material for the channel layer 25, whereby the light absorption coefficient of the photoelectric conversion layer 35 is made to be higher than that of the channel layer 25.

摘要翻译： 在同一衬底上形成开关元件和光传感器元件的情况下，为了提高光传感器元件的灵敏度，活性层的膜厚度的增加将不利地影响开关元件（TFT）的特性。 在用于构成用于像素的开关元件的薄膜晶体管的沟道层25和用于构成光传感器元件的光电转换层35的显示器的配置设置在玻璃基板5上的栅极绝缘膜24上 设置有以矩阵图案排列的多个像素，光电转换层35形成为比沟道层25厚，和/或光电转换层35由与沟道层材料不同的材料形成 25，由此使光电转换层35的光吸收系数高于沟道层25的光吸收系数。

公开(公告)号：US20100171120A1

公开(公告)日：2010-07-08

申请号：US12530801

申请日：2008-09-18

申请人： Dharam Pal Gosain ,  Tsutomu Tanaka ,  Makoto Takatoku

发明人： Dharam Pal Gosain ,  Tsutomu Tanaka ,  Makoto Takatoku

IPC分类号： H01L33/08 ,  H01L21/28

CPC分类号： H01L27/1222 ,  G02F1/1368 ,  G02F2001/13312 ,  G06F3/0412 ,  G06F3/0421 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/66765

摘要： In the case of forming switching elements and light sensor elements over the same substrate, an increase in the film thickness of active layers in an attempt to enhance the sensitivity of the light sensor elements would adversely affect the characteristics of the switching elements (TFTs). In a configuration of a display in which a channel layer 25 for constituting thin film transistors to form the switching elements for pixels and a photoelectric conversion layer 35 for constituting the light sensor elements are provided over a gate insulating film 24 on a glass substrate 5 to be provided with a plurality of pixels arranged in a matrix pattern, the photoelectric conversion layer 35 is formed to be thicker than the channel layer 25, and/or the photoelectric conversion layer 35 is formed of a material different from the material for the channel layer 25, whereby the light absorption coefficient of the photoelectric conversion layer 35 is made to be higher than that of the channel layer 25.

摘要翻译： 在同一衬底上形成开关元件和光传感器元件的情况下，为了提高光传感器元件的灵敏度，活性层的膜厚度的增加将不利地影响开关元件（TFT）的特性。 在用于构成用于像素的开关元件的薄膜晶体管的沟道层25和用于构成光传感器元件的光电转换层35的显示器的配置设置在玻璃基板5上的栅极绝缘膜24上 设置有以矩阵图案排列的多个像素，光电转换层35形成为比沟道层25厚，和/或光电转换层35由与沟道层材料不同的材料形成 25，由此使光电转换层35的光吸收系数高于沟道层25的光吸收系数。

公开(公告)号：US20100085339A1

公开(公告)日：2010-04-08

申请号：US12562317

申请日：2009-09-18

申请人： Tsutomu TANAKA ,  Makoto Takatoku ,  Michiru Senda ,  Keiichiro Ishihara

发明人： Tsutomu TANAKA ,  Makoto Takatoku ,  Michiru Senda ,  Keiichiro Ishihara

IPC分类号： G09G5/00 ,  H01L31/101

CPC分类号： H01L27/1446 ,  H01L31/145

摘要： The present invention provides a sensor element including two diode elements connected in series to each other, and a capacitive element having one end connected to a junction point between the two diode elements. Each of the diode elements includes a semiconductor layer having a p-type semiconductor region and an n-type semiconductor region facing each other in an in-plane direction, an anode electrode connected to the p-type semiconductor region, a cathode electrode connected to the n-type semiconductor region, a gate insulting film adjoining the semiconductor layer in a stacking direction, and a gate electrode facing the semiconductor layer with the gate insulating film in between.

摘要翻译： 本发明提供一种传感器元件，其包括彼此串联连接的两个二极管元件，以及电容元件，其一端连接到两个二极管元件之间的接合点。 每个二极管元件包括具有p型半导体区域和在面内方向上彼此相对的n型半导体区域的半导体层，连接到p型半导体区域的阳极电极，连接到 n型半导体区域，在层叠方向上邻接半导体层的栅极绝缘膜以及面对半导体层的栅极电极与栅极绝缘膜之间。

公开(公告)号：US20090194760A1

公开(公告)日：2009-08-06

申请号：US12320307

申请日：2009-01-23

申请人： Dharam Pal Gosain ,  Makoto Takatoku ,  Yoshiharu Nakajima ,  Tsutomu Tanaka

发明人： Dharam Pal Gosain ,  Makoto Takatoku ,  Yoshiharu Nakajima ,  Tsutomu Tanaka

IPC分类号： H01L45/00 ,  H01L29/786

CPC分类号： H01L27/12 ,  G02F1/1362 ,  G09G3/3648 ,  G09G2300/088 ,  G09G2330/021 ,  H01L27/1214 ,  H01L27/24

摘要： Disclosed herein is a memory element, including a parallel combination of a thin film transistor; and a resistance change element, the thin film transistor including a semiconductor thin film in which a channel region, and an input terminal and an output terminal located on both sides of the channel region, respectively, are formed, and a gate electrode overlapping the channel region through an insulating film to become a control terminal, the resistance change element including one conductive layer connected to the input terminal side of the thin film transistor, the other conductive layer connected to the output terminal side of the thin film transistor, and at least one oxide film layer disposed between the one conductive layer and the other conductive layer.

摘要翻译： 这里公开了一种存储元件，包括薄膜晶体管的并联组合; 以及电阻变化元件，所述薄膜晶体管包括分别形成有沟道区域和位于所述沟道区域两侧的输入端子和输出端子的半导体薄膜，并且与所述沟道重叠的栅极电极 区域，通过绝缘膜成为控制端子，电阻变化元件包括连接到薄膜晶体管的输入端侧的一个导电层，连接到薄膜晶体管的输出端侧的另一导电层，至少 一个氧化物膜层设置在一个导电层和另一个导电层之间。

公开(公告)号：US08115188B2

公开(公告)日：2012-02-14

申请号：US12320307

申请日：2009-01-23

申请人： Dharam Pal Gosain ,  Makoto Takatoku ,  Yoshiharu Nakajima ,  Tsutomu Tanaka

发明人： Dharam Pal Gosain ,  Makoto Takatoku ,  Yoshiharu Nakajima ,  Tsutomu Tanaka

IPC分类号： H01L45/00 ,  G11C11/00

CPC分类号： H01L27/12 ,  G02F1/1362 ,  G09G3/3648 ,  G09G2300/088 ,  G09G2330/021 ,  H01L27/1214 ,  H01L27/24

摘要： Disclosed herein is a memory element, including a parallel combination of a thin film transistor; and a resistance change element, the thin film transistor including a semiconductor thin film in which a channel region, and an input terminal and an output terminal located on both sides of the channel region, respectively, are formed, and a gate electrode overlapping the channel region through an insulating film to become a control terminal, the resistance change element including one conductive layer connected to the input terminal side of the thin film transistor, the other conductive layer connected to the output terminal side of the thin film transistor, and at least one oxide film layer disposed between the one conductive layer and the other conductive layer.

摘要翻译： 这里公开了一种存储元件，包括薄膜晶体管的并联组合; 以及电阻变化元件，所述薄膜晶体管包括分别形成有沟道区域和位于所述沟道区域两侧的输入端子和输出端子的半导体薄膜，并且与所述沟道重叠的栅极电极 区域，通过绝缘膜成为控制端子，电阻变化元件包括连接到薄膜晶体管的输入端侧的一个导电层，连接到薄膜晶体管的输出端侧的另一导电层，至少 一个氧化物膜层设置在一个导电层和另一个导电层之间。

公开(公告)号：US20110115767A1

公开(公告)日：2011-05-19

申请号：US12941276

申请日：2010-11-08

申请人： Michiru Senda ,  Makoto Takatoku ,  Tsutomu Harada

发明人： Michiru Senda ,  Makoto Takatoku ,  Tsutomu Harada

IPC分类号： G09G5/00 ,  G01J1/42

CPC分类号： G06F3/0412 ,  G06F3/0418 ,  G06F3/042

摘要： Techniques are described for detecting and compensating for characteristic changes of a photoelectric conversion element, such as changes related to the temperature of the photoelectric conversion element. A display device that includes an I/O display panel and a light-receiving drive circuit is disclosed. The I/O display panel includes a plurality of display pixels; and a plurality of photoelectric conversion elements including a first photoelectric conversion element that substantially is shielded from light and a second photoelectric conversion element that is exposed to light. The light-receiving drive circuit receives a first detection signal from the first photoelectric conversion element and resets the second photoelectric conversion element based on the first detection signal.

摘要翻译： 描述了用于检测和补偿光电转换元件的特性变化的技术，例如与光电转换元件的温度相关的变化。 公开了一种包括I / O显示面板和光接收驱动电路的显示装置。 I / O显示面板包括多个显示像素; 以及多个光电转换元件，包括基本上被遮光的第一光电转换元件和暴露于光的第二光电转换元件。 光接收驱动电路接收来自第一光电转换元件的第一检测信号，并且基于第一检测信号复位第二光电转换元件。

公开(公告)号：US06693258B2

公开(公告)日：2004-02-17

申请号：US10061392

申请日：2002-02-04

申请人： Yukiyasu Sugano ,  Masahiro Fujino ,  Michio Mano ,  Akihiko Asano ,  Masumitsu Ino ,  Takenobu Urazono ,  Makoto Takatoku

发明人： Yukiyasu Sugano ,  Masahiro Fujino ,  Michio Mano ,  Akihiko Asano ,  Masumitsu Ino ,  Takenobu Urazono ,  Makoto Takatoku

IPC分类号： H01L2976

CPC分类号： H01L21/02686 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78678

摘要： A polycrystalline thin film of good quality is obtained by improving a crystallization process of a semiconductor thin film using laser light. After conducting a film forming step of forming a non-single crystal semiconductor thin film on a surface of a substrate, an annealing step is conducted by irradiating with laser light to convert the non-single crystal semiconductor thin film to a polycrystalline material. The annealing step is conducted by changing and adjusting the cross sectional shape of the laser light to a prescribed region. The semiconductor thin film is irradiated once or more with a pulse of laser light having an emission time width from upstand to downfall of 50 ns or more and having a constant cross sectional area, so as to convert the semiconductor thin film contained in an irradiated region corresponding to the cross sectional area to a polycrystalline material at a time. At this time, the energy intensity of laser light from upstand to downfall is controlled to apply a desired change. According to the procedures, a polycrystalline material having a large particle diameter or a uniform particle diameter can be obtained. In some cases, upon irradiation with laser light, the substrate may be maintained in a non-oxidative atmosphere, or may be heated or cooled.

摘要翻译： 通过使用激光改善半导体薄膜的结晶处理，获得质量好的多晶薄膜。 在基板的表面上进行形成非单晶半导体薄膜的成膜工序后，通过用激光照射进行退火工序，将非单晶半导体薄膜转换成多晶材料。 通过将激光的横截面形状改变并调整到规定的区域来进行退火步骤。 半导体薄膜用发光时间宽度从50ns以上的发光时间宽度的激光脉冲照射一次以上，并且具有恒定的横截面积，以将包含在照射区域中的半导体薄膜 对应于一次的多晶材料的横截面积。 此时，控制从升降到下降的激光的能量强度以应用期望的变化。 根据该方法，可以获得具有大粒径或均匀粒径的多晶材料。 在一些情况下，在用激光照射时，可将基底保持在非氧化性气氛中，或者可以加热或冷却。

公开(公告)号：US06734635B2

公开(公告)日：2004-05-11

申请号：US09968843

申请日：2001-10-03

申请人： Masafumi Kunii ,  Makoto Takatoku ,  Michio Mano

发明人： Masafumi Kunii ,  Makoto Takatoku ,  Michio Mano

IPC分类号： B05D306

CPC分类号： H01L21/02675 ,  B23K26/066 ,  B23K26/0732 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L21/2026

摘要： A process of crystallizing a semiconductor thin film previously formed on a substrate by irradiating the semiconductor thin film with a laser beam, includes: a preparation step of dividing the surface of the substrate into a plurality of division regions, and shaping a laser beam to adjust an irradiation region of the laser beam such that one of the division regions is collectively irradiated with one shot of the laser beam; a crystallization step of irradiating one of the division regions with the laser beam while optically modulating the intensity of the laser beam such that a cyclic light-and-dark pattern is projected on the irradiation region, and irradiating the same division region by at least one time after shifting the pattern such that the light and dark portions of the pattern after shifting are not overlapped to those of the pattern before shifting; and a scanning step of shifting the irradiation region of the laser beam to the next division region, and repeating the crystallization step for the division region.

摘要翻译： 通过用激光束照射半导体薄膜来预先形成在基板上的半导体薄膜的结晶工艺包括：准备步骤，将基板的表面划分为多个划分区域，并使激光束成形以进行调整 激光束的照射区域，使得一个分割区域被一次激光束共同照射;结晶步骤，用激光束照射一个分割区域，同时光学地调制激光束的强度，使得 在照射区域上投影循环光和暗图案，并且在移动图案之后至少一次照射相同的分割区域，使得移位之后的图案的亮和暗部分不与图案的那些重叠 转移前 以及扫描步骤，将激光束的照射区域移动到下一个分割区域，并重复用于分割区域的结晶步骤。

公开(公告)号：US06632711B2

公开(公告)日：2003-10-14

申请号：US09731905

申请日：2000-12-08

申请人： Yukiyasu Sugano ,  Masahiro Fujino ,  Michio Mano ,  Akihiko Asano ,  Masumitsu Ino ,  Takenobu Urazono ,  Makoto Takatoku

发明人： Yukiyasu Sugano ,  Masahiro Fujino ,  Michio Mano ,  Akihiko Asano ,  Masumitsu Ino ,  Takenobu Urazono ,  Makoto Takatoku

IPC分类号： H01L2184

CPC分类号： H01L21/02686 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78678

摘要： A polycrystalline thin film of good quality is obtained by improving a crystallization process of a semiconductor thin film using laser light. After conducting a film forming step of forming a non-single crystal semiconductor thin film on a surface of a substrate, an annealing step is conducted by irradiating with laser light to convert the non-single crystal semiconductor thin film to a polycrystalline material. The annealing step is conducted by changing and adjusting the cross sectional shape of the laser light to a prescribed region. The semiconductor thin film is irradiated once or more with a pulse of laser light having an emission time width from upstand to downfall of 50 ns or more and having a constant cross sectional area, so as to convert the semiconductor thin film contained in an irradiated region corresponding to the cross sectional area to a polycrystalline material at a time. At this time, the energy intensity of laser light from upstand to downfall is controlled to apply a desired change. According to the procedures, a polycrystalline material having a large particle diameter or a uniform particle diameter can be obtained. In some cases, upon irradiation with laser light, the substrate may be maintained in a non-oxidative atmosphere, or may be heated or cooled.

摘要翻译： 通过使用激光改善半导体薄膜的结晶处理，获得质量好的多晶薄膜。 在基板的表面上进行形成非单晶半导体薄膜的成膜工序后，通过用激光照射进行退火工序，将非单晶半导体薄膜转换为多晶材料。 通过将激光的横截面形状改变并调整到规定的区域来进行退火步骤。 半导体薄膜用发光时间宽度从50ns以上的发光时间宽度的激光脉冲照射一次以上，并且具有恒定的横截面积，以将包含在照射区域中的半导体薄膜 对应于一次的多晶材料的横截面积。 此时，控制从升降到下降的激光的能量强度以应用期望的变化。 根据该方法，可以获得具有大粒径或均匀粒径的多晶材料。 在某些情况下，在用激光照射时，可将基底保持在非氧化性气氛中，或者可以加热或冷却。