公开(公告)号：US06388386B1

公开(公告)日：2002-05-14

申请号：US09550293

申请日：2000-04-14

申请人： Masafumi Kunii ,  Makoto Takatoku ,  Michio Mano

发明人： Masafumi Kunii ,  Makoto Takatoku ,  Michio Mano

IPC分类号： B05D306

CPC分类号： H01L21/02675 ,  B23K26/066 ,  B23K26/0732 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L21/2026

摘要： A process of crystallizing a semiconductor thin film previously formed on a substrate by irradiating the semiconductor thin film with a laser beam, includes: a preparation step of dividing the surface of the substrate into a plurality of division regions, and shaping a laser beam to adjust an irradiation region of the laser beam such that one of the division regions is collectively irradiated with one shot of the laser beam; a crystallization step of irradiating one of the division regions with the laser beam while optically modulating the intensity of the laser beam such that a cyclic light-and-dark pattern is projected on the irradiation region, and irradiating the same division region by at least one time after shifting the pattern such that the light and dark portions of the pattern after shifting are not overlapped to those of the pattern before shifting; and a scanning step of shifting the irradiation region of the laser beam to the next division region, and repeating the crystallization step for the division region.

摘要翻译： 通过用激光束照射半导体薄膜来预先形成在基板上的半导体薄膜的结晶工艺包括：准备步骤，将基板的表面划分为多个划分区域，并使激光束成形以进行调整 激光束的照射区域，使得一个分割区域被一次激光束共同照射;结晶步骤，用激光束照射一个分割区域，同时光学地调制激光束的强度，使得 在照射区域上投影循环光和暗图案，并且在移动图案之后至少一次照射相同的分割区域，使得移位之后的图案的亮和暗部分不与图案的那些重叠 转移前 以及扫描步骤，将激光束的照射区域移动到下一个分割区域，并重复用于分割区域的结晶步骤。

公开(公告)号：US06734635B2

公开(公告)日：2004-05-11

申请号：US09968843

申请日：2001-10-03

申请人： Masafumi Kunii ,  Makoto Takatoku ,  Michio Mano

发明人： Masafumi Kunii ,  Makoto Takatoku ,  Michio Mano

IPC分类号： B05D306

CPC分类号： H01L21/02675 ,  B23K26/066 ,  B23K26/0732 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L21/2026

摘要： A process of crystallizing a semiconductor thin film previously formed on a substrate by irradiating the semiconductor thin film with a laser beam, includes: a preparation step of dividing the surface of the substrate into a plurality of division regions, and shaping a laser beam to adjust an irradiation region of the laser beam such that one of the division regions is collectively irradiated with one shot of the laser beam; a crystallization step of irradiating one of the division regions with the laser beam while optically modulating the intensity of the laser beam such that a cyclic light-and-dark pattern is projected on the irradiation region, and irradiating the same division region by at least one time after shifting the pattern such that the light and dark portions of the pattern after shifting are not overlapped to those of the pattern before shifting; and a scanning step of shifting the irradiation region of the laser beam to the next division region, and repeating the crystallization step for the division region.

摘要翻译： 通过用激光束照射半导体薄膜来预先形成在基板上的半导体薄膜的结晶工艺包括：准备步骤，将基板的表面划分为多个划分区域，并使激光束成形以进行调整 激光束的照射区域，使得一个分割区域被一次激光束共同照射;结晶步骤，用激光束照射一个分割区域，同时光学地调制激光束的强度，使得 在照射区域上投影循环光和暗图案，并且在移动图案之后至少一次照射相同的分割区域，使得移位之后的图案的亮和暗部分不与图案的那些重叠 转移前 以及扫描步骤，将激光束的照射区域移动到下一个分割区域，并重复用于分割区域的结晶步骤。

公开(公告)号：US06482722B2

公开(公告)日：2002-11-19

申请号：US09968842

申请日：2001-10-03

申请人： Masafumi Kunii ,  Makoto Takatoku ,  Michio Mano

发明人： Masafumi Kunii ,  Makoto Takatoku ,  Michio Mano

IPC分类号： H01L2904

CPC分类号： H01L21/02675 ,  B23K26/066 ,  B23K26/0732 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L21/2026

摘要： A process of crystallizing a semiconductor thin film previously formed on a substrate by irradiating the semiconductor thin film with a laser beam, includes: a preparation step of dividing the surface of the substrate into a plurality of division regions, and shaping a laser beam to adjust an irradiation region of the laser beam such that one of the division regions is collectively irradiated with one shot of the laser beam; a crystallization step of irradiating one of the division regions with the laser beam while optically modulating the intensity of the laser beam such that a cyclic light-and-dark pattern is projected on the irradiation region, and irradiating the same division region by at least one time after shifting the pattern such that the light and dark portions of the pattern after shifting are not overlapped to those of the pattern before shifting; and a scanning step of shifting the irradiation region of the laser beam to the next division region, and repeating the crystallization step for the division region.

公开(公告)号：US20090159893A1

公开(公告)日：2009-06-25

申请号：US12331159

申请日：2008-12-09

申请人： Natsuki Otani ,  Tsutomu Tanaka ,  Masafumi Kunii ,  Masanobu Ikeda ,  Ryoichi Ito

发明人： Natsuki Otani ,  Tsutomu Tanaka ,  Masafumi Kunii ,  Masanobu Ikeda ,  Ryoichi Ito

IPC分类号： H01L31/0368 ,  H01L31/12

CPC分类号： H01L31/153 ,  G02F2201/58 ,  H01L27/14632 ,  H01L31/112

摘要： A light-receiving element includes: a first-conductivity-type semiconductor region configured to be formed over an element formation surface; a second-conductivity-type semiconductor region configured to be formed over the element formation surface; an intermediate semiconductor region configured to be formed over the element formation surface between the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region, and have an impurity concentration lower than impurity concentrations of the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region. The light-receiving element further includes: a first electrode configured to be electrically connected to the first-conductivity-type semiconductor region; a second electrode configured to be electrically connected to the second-conductivity-type semiconductor region; and a control electrode configured to be formed in an opposed area that exists on the element formation surface.

摘要翻译： 光接收元件包括：第一导电型半导体区域，被配置为形成在元件形成表面上; 构造成形成在所述元件形成表面上的第二导电型半导体区域; 中间半导体区域，被配置为形成在第一导电型半导体区域和第二导电型半导体区域之间的元件形成表面之上，并且具有低于第一导电类型半导体区域的杂质浓度的杂质浓度 和第二导电型半导体区域。 光接收元件还包括：第一电极，被配置为电连接到第一导电型半导体区域; 第二电极，其被配置为电连接到所述第二导电型半导体区域; 以及控制电极，其被配置为形成在存在于所述元件形成表面上的相对区域中。

公开(公告)号：US20070298553A1

公开(公告)日：2007-12-27

申请号：US11763744

申请日：2007-06-15

申请人： Masafumi Kunii

发明人： Masafumi Kunii

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L31/20

CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/78696

摘要： The production method of the thin film transistor according to the present invention involves the reactive heat CVD process to form the active layer and the source-drain layer. This offers the advantage of eliminating additional steps to crystallize the semiconductor thin film. The resulting stacked thin film transistor is composed of originally crystalline semiconductor thin films. Having the active layer and the source-drain layer formed from crystalline semiconductor thin film, the stacked thin film transistor has a faster working speed than the one formed from amorphous semiconductor thin film. Another advantage of eliminating steps for crystallization is uniform quality which would otherwise be adversely affected by crystallization. In addition, the fact that the source-drain layer is formed from a previously doped crystalline semiconductor thin film means that there is no need for any step to introduce impurities after film formation.

摘要翻译： 根据本发明的薄膜晶体管的制造方法涉及反应热CVD工艺以形成有源层和源极 - 漏极层。 这提供了除去结晶半导体薄膜的附加步骤的优点。 所形成的叠层薄膜晶体管由原来的晶体半导体薄膜组成。 具有由晶体半导体薄膜形成的有源层和源极 - 漏极层，堆叠的薄膜晶体管的工作速度比由非晶半导体薄膜形成的速度更快。 消除结晶步骤的另一个优点是质量均匀，否则会受到结晶的不利影响。 此外，源极 - 漏极层由先前掺杂的晶体半导体薄膜形成的事实意味着在成膜之后不需要引入杂质的任何步骤。

公开(公告)号：US20060051903A1

公开(公告)日：2006-03-09

申请号：US11196109

申请日：2005-08-03

申请人： Masafumi Kunii

发明人： Masafumi Kunii

IPC分类号： H01L21/8232 ,  H01L21/335

CPC分类号： H01L27/12 ,  H01L27/1248

摘要： TFTs are formed on a substrate, and a layer insulation film containing no hydroxyl group in at least a lowermost layer film is formed in the state of covering the TFTs. Thereafter, a heat treatment is conducted in a moisture atmosphere, whereby oxygen or hydrogen is bound to dangling bonds present in a semiconductor thin film constituting the TFTs, and an enhancement of the denseness of the layer insulation film is contrived. The layer insulation film includes silicon nitride, for example.

摘要翻译： 在基板上形成TFT，在覆盖TFT的状态下，形成在至少最下层膜中不含羟基的层绝缘膜。 此后，在水分气氛中进行热处理，由此氧或氢结合存在于构成TFT的半导体薄膜中的悬挂键，并且提高了层间绝缘膜的致密性。 层间绝缘膜例如包括氮化硅。

公开(公告)号：US06548830B1

公开(公告)日：2003-04-15

申请号：US09616685

申请日：2000-07-14

申请人： Takashi Noguchi ,  Yasuhiro Kanaya ,  Masafumi Kunii ,  Yuji Ikeda ,  Setsuo Usui

发明人： Takashi Noguchi ,  Yasuhiro Kanaya ,  Masafumi Kunii ,  Yuji Ikeda ,  Setsuo Usui

IPC分类号： H01L2976

CPC分类号： H01L21/02686 ,  B82Y10/00 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/02609 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/28273 ,  H01L29/66765 ,  H01L29/78678 ,  Y10T428/24372

摘要： A semiconductor device comprising a source/drain region and a channel region formed in a silicon thin film composed of a group of silicon single crystal grains which are each approximately rectangular-shaped and which are arranged in a grid pattern on the base body, where a selected orientation of the silicon single crystal grains to the surface of the base body is approximately the direction.

摘要翻译： 一种半导体器件，包括源极/漏极区域和形成在由硅单晶颗粒组成的硅薄膜中的沟槽区域，所述硅单晶晶体每个近似矩形并且以基板上的网格图案布置，其中 硅单晶晶粒的基体的表面的选择取向大致为<100>方向。

公开(公告)号：US5943107A

公开(公告)日：1999-08-24

申请号：US128091

申请日：1998-08-03

申请人： Hisashi Kadota ,  Yuko Inoue ,  Takenobu Urazono ,  Masafumi Kunii ,  Shinj Nakamura

发明人： Hisashi Kadota ,  Yuko Inoue ,  Takenobu Urazono ,  Masafumi Kunii ,  Shinj Nakamura

IPC分类号： G02F1/1333 ,  G02F1/1335 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L29/786

CPC分类号： G02F1/136227 ,  G02F1/133514 ,  G02F1/136209 ,  G02F1/1368 ,  G02F2001/133357

摘要： A color display device such as an active-matrix type liquid crystal display apparatus has a first substrate having pixel electrodes arranged in the form of the matrix, switching elements associated with respective pixel electrodes and color filters aligned with the respective pixel electrodes. The first substrate is composed of a laminate structure including, superposed in the mentioned sequence, a first layer having the switching elements, a second layer having the color filters, a third layer including a planarization film which fills convexities presented by the switching elements and the color filters, and a fourth layer having the pixel electrodes aligned with the color filter. The display device also has a second substrate including a counter electrode and adjoined to the first substrate leaving a predetermined gap left therebetween. A liquid crystal is charged in the gap between the first and second substrates.

摘要翻译： 诸如有源矩阵型液晶显示装置的彩色显示装置具有第一基板，其具有以矩阵形式布置的像素电极，与各个像素电极相关的开关元件和与各个像素电极对准的滤色器。 第一基板由层叠结构构成，其包括以上述顺序叠加具有开关元件的第一层，具有滤色器的第二层，包括填充由开关元件呈现的凸部的平坦化膜的第三层和 滤色器，以及具有与滤色器对准的像素电极的第四层。 显示装置还具有包括对置电极的第二基板，并且与第一基板邻接，留下预定的间隙。 在第一和第二基板之间的间隙中充入液晶。

公开(公告)号：US09328414B2

公开(公告)日：2016-05-03

申请号：US12216081

申请日：2008-06-30

申请人： Masafumi Kunii

发明人： Masafumi Kunii

IPC分类号： H01L21/00 ,  C23C16/02 ,  C23C16/24 ,  C23C16/455 ,  C23C16/509 ,  H01L21/02 ,  H01L27/12 ,  H01L29/66

CPC分类号： H01L27/127 ,  C23C16/0245 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/45512 ,  C23C16/45565 ,  C23C16/5096 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02595 ,  H01L21/0262 ,  H01L27/1214 ,  H01L29/66765

摘要： Disclosed herein is a method of manufacturing a thin film semiconductor device includes the step of forming a silicon thin film including a crystalline structure on a substrate by a plasma CVD process in which a high order silane gas represented by the formula SinH2n+2 (n=2, 3, . . . ) and a hydrogen gas are used as film forming gases.

公开(公告)号：US08269927B2

公开(公告)日：2012-09-18

申请号：US12435493

申请日：2009-05-05

申请人： Masafumi Kunii ,  Go Yamanaka

发明人： Masafumi Kunii ,  Go Yamanaka

IPC分类号： G02F1/133 ,  G02F1/1343

CPC分类号： G02F1/13318

摘要： Disclosed herein is a liquid crystal display including a liquid crystal panel including, a first substrate, a second substrate opposed to said first substrate, and a liquid crystal layer interposed between said first substrate and said second substrate, a plurality of pixels being arrayed in a first direction and in a second direction orthogonal to said first direction in a pixel area provided in a plane where said first substrate and said second substrate are opposed.

摘要翻译： 本发明公开了一种液晶显示装置，其特征在于，包括：液晶面板，具有第一基板，与所述第一基板相对的第二基板以及插入在所述第一基板和所述第二基板之间的液晶层，多个像素排列成 在与所述第一方向垂直的第二方向上设置在所述第一基板和所述第二基板相对的平面中的像素区域中。