摘要:
Disclosed is an adhesive composition including a compound having a multi-functional urethane (meth)acrylate group and an adhesive film prepared by using it. The adhesive composition includes compounds represented by Chemical Formulae 1 to 3. The compound represented by Chemical Formulae 1 to 3 includes an urethane (meth)acrylate group represented by the Chemical Formula 1-1 or 1-2.
摘要:
Disclosed are a composition comprising a mixture of at least one iridium organometallic compound and an electrically conductive polymer, an organic active layer comprising the same, an organic memory device comprising the organic active layer and methods for fabricating the same. The organic memory device may include a first electrode, a second electrode and the organic active layer between the first and second electrodes. The organic memory device possesses the advantages of rapid switching time, decreased operating voltage, decreased fabrication costs, increased reliability and improved non-volatility.
摘要:
Disclosed is a compound having a photocurable urethane (meth)acrylate group, its manufacturing method, and a photocurable composition including the compound. The compound is represented by Chemical Formulae 1 to 6. Each of Chemical Formulae 1 to 6 includes a urethane (meth)acrylate group represented by Chemical Formula 1-1 or 1-2.
摘要:
A composition for preparing an organic insulator, the composition comprising (i) at least one organic-inorganic hybrid material; (ii) at least one organometallic compound and/or organic polymer; and (iii) at least one solvent for dissolving the above two components, so that an organic insulator using the same has a low threshold voltage and driving voltage, and high charge carrier mobility and Ion/Ioff ratio, thereby enhancing insulator characteristics. Further, the preparation of organic insulating film can be carried out by wet process, so that simplification of the process and cut of cost are achieved.
摘要:
A method of fabricating a thin film transistor, in which source and drain electrodes are formed through a solution process, thus all stages which include formation of electrodes on a substrate, formation of an insulator layer, and formation of an organic semiconductor layer are conducted through the solution process. In the method, the fabrication is simplified and a fabrication cost is reduced. It is possible to apply the organic thin film transistor to integrated circuits requiring high speed switching because of high charge mobility.
摘要:
Disclosed herein is a siloxane-based resin prepared by hydrolyzing and polycondensing a cyclic siloxane compound, a silane compound having three hydrolysable functional groups and a silane compound having three hydrolysable functional groups and one heat-labile functional group, in an organic solvent in the presence of a catalyst and water. Also, disclosed herein is a method of forming an insulating film between interconnect layers of a semiconductor device using the siloxane-based resin thus prepared, whereby an insulating film having low dielectric constant as well as excellent mechanical properties can be obtained.
摘要:
A method of fabricating a thin film transistor, in which source and drain electrodes are formed through a solution process, even all stages which include formation of electrodes on a substrate, formation of an insulator layer, and formation of an organic semiconductor layer are conducted through the solution process. In the method, the fabrication is simplified and a fabrication cost is reduced. It is possible to apply the organic thin film transistor to integrated circuits requiring high speed switching because of high charge mobility.
摘要:
A method of fabricating a thin film transistor, in which source and drain electrodes are formed through a solution process, even all stages which include formation of electrodes on a substrate, formation of an insulator layer, and formation of an organic semiconductor layer are conducted through the solution process. In the method, the fabrication is simplified and a fabrication cost is reduced. It is possible to apply the organic thin film transistor to integrated circuits requiring high speed switching because of high charge mobility.
摘要:
Disclosed herein are a novel gemini surfactant and a method for preparing a mesoporous material using the gemini surfactant. The method for preparing a mesoporous material uses the novel gemini surfactant as a structure-directing agent to provide a mesoporous material has a pore size of 10 nm or less with uniform pore size distribution.
摘要:
An organic thin film transistor (OTFT) comprising a gate electrode, a gate insulating film, an organic active layer and a source/drain electrode, or a gate electrode, a gate insulating film, a source/drain electrode and an organic active layer, sequentially formed on a substrate, wherein the gate insulating film is a multi-layered insulator comprising a first layer of a high dielectric material and a second layer of an insulating organic polymer compatible with the organic active layer, the second layer being positioned directly under the organic active layer. The OTFT of the present invention shows low threshold and driving voltages, high charge mobility, and high Ion/Ioff, and it can be prepared by a wet process.