Organic memory device using iridium organometallic compound and fabrication method thereof
    12.
    发明申请
    Organic memory device using iridium organometallic compound and fabrication method thereof 失效
    使用铱有机金属化合物的有机记忆装置及其制造方法

    公开(公告)号:US20080146802A1

    公开(公告)日:2008-06-19

    申请号:US11783138

    申请日:2007-04-06

    IPC分类号: H01L51/40 C07F15/00

    摘要: Disclosed are a composition comprising a mixture of at least one iridium organometallic compound and an electrically conductive polymer, an organic active layer comprising the same, an organic memory device comprising the organic active layer and methods for fabricating the same. The organic memory device may include a first electrode, a second electrode and the organic active layer between the first and second electrodes. The organic memory device possesses the advantages of rapid switching time, decreased operating voltage, decreased fabrication costs, increased reliability and improved non-volatility.

    摘要翻译: 公开了包含至少一种铱有机金属化合物和导电聚合物的混合物的组合物,包含该有机金属化合物的有机活性层,包含有机活性层的有机存储装置及其制造方法。 有机存储器件可以包括第一电极,第二电极和第一和第二电极之间的有机活性层。 有机存储器具有切换时间快,工作电压降低,制造成本降低,可靠性提高,非挥发性提高的优点。

    Photocurable compound
    13.
    发明授权
    Photocurable compound 有权
    光固化合物

    公开(公告)号:US08217195B2

    公开(公告)日:2012-07-10

    申请号:US12539326

    申请日:2009-08-11

    IPC分类号: C07C271/12

    摘要: Disclosed is a compound having a photocurable urethane (meth)acrylate group, its manufacturing method, and a photocurable composition including the compound. The compound is represented by Chemical Formulae 1 to 6. Each of Chemical Formulae 1 to 6 includes a urethane (meth)acrylate group represented by Chemical Formula 1-1 or 1-2.

    摘要翻译: 公开了具有可光固化的氨基甲酸酯(甲基)丙烯酸酯基的化合物,其制造方法和包含该化合物的光固化性组合物。 化合物由化学式1〜6表示。化学式1〜6各自包含由化学式1-1或1-2表示的氨基甲酸酯(甲基)丙烯酸酯基。

    Method of fabricating thin film transistor
    15.
    发明授权
    Method of fabricating thin film transistor 有权
    制造薄膜晶体管的方法

    公开(公告)号:US07341897B2

    公开(公告)日:2008-03-11

    申请号:US11142502

    申请日:2005-06-02

    IPC分类号: H01L21/84

    摘要: A method of fabricating a thin film transistor, in which source and drain electrodes are formed through a solution process, thus all stages which include formation of electrodes on a substrate, formation of an insulator layer, and formation of an organic semiconductor layer are conducted through the solution process. In the method, the fabrication is simplified and a fabrication cost is reduced. It is possible to apply the organic thin film transistor to integrated circuits requiring high speed switching because of high charge mobility.

    摘要翻译: 一种制造薄膜晶体管的方法,其中通过溶液工艺形成源极和漏极,因此包括在衬底上形成电极,形成绝缘体层和形成有机半导体层的所有阶段通过 解决过程。 在该方法中,简化了制造并降低了制造成本。 由于高电荷迁移率,有机薄膜晶体管可能需要高速切换的集成电路。

    Method of fabricating thin film transistor
    17.
    发明授权
    Method of fabricating thin film transistor 有权
    制造薄膜晶体管的方法

    公开(公告)号:US07834352B2

    公开(公告)日:2010-11-16

    申请号:US11972847

    申请日:2008-01-11

    IPC分类号: H01L31/00

    摘要: A method of fabricating a thin film transistor, in which source and drain electrodes are formed through a solution process, even all stages which include formation of electrodes on a substrate, formation of an insulator layer, and formation of an organic semiconductor layer are conducted through the solution process. In the method, the fabrication is simplified and a fabrication cost is reduced. It is possible to apply the organic thin film transistor to integrated circuits requiring high speed switching because of high charge mobility.

    摘要翻译: 制造薄膜晶体管的方法,其中源极和漏极通过溶液处理形成,甚至包括在衬底上形成电极的所有阶段,形成绝缘体层以及形成有机半导体层通过 解决过程。 在该方法中,简化了制造并降低了制造成本。 由于高电荷迁移率,有机薄膜晶体管可能需要高速切换的集成电路。

    Method of Fabricating Thin Film Transistor
    18.
    发明申请
    Method of Fabricating Thin Film Transistor 有权
    制造薄膜晶体管的方法

    公开(公告)号:US20080135839A1

    公开(公告)日:2008-06-12

    申请号:US11972847

    申请日:2008-01-11

    IPC分类号: H01L27/13 H01L21/326

    摘要: A method of fabricating a thin film transistor, in which source and drain electrodes are formed through a solution process, even all stages which include formation of electrodes on a substrate, formation of an insulator layer, and formation of an organic semiconductor layer are conducted through the solution process. In the method, the fabrication is simplified and a fabrication cost is reduced. It is possible to apply the organic thin film transistor to integrated circuits requiring high speed switching because of high charge mobility.

    摘要翻译: 制造薄膜晶体管的方法,其中源极和漏极通过溶液处理形成,甚至包括在衬底上形成电极的所有阶段,形成绝缘体层以及形成有机半导体层通过 解决过程。 在该方法中,简化了制造并降低了制造成本。 由于高电荷迁移率,有机薄膜晶体管可能需要高速切换的集成电路。

    Gemini surfactants and methods for preparing mesoporous materials using the same
    19.
    发明授权
    Gemini surfactants and methods for preparing mesoporous materials using the same 有权
    双子座表面活性剂和使用其制备介孔材料的方法

    公开(公告)号:US07129202B2

    公开(公告)日:2006-10-31

    申请号:US10649823

    申请日:2003-08-28

    IPC分类号: C11D1/62 C11D9/36 C01B33/20

    CPC分类号: C07F7/0838

    摘要: Disclosed herein are a novel gemini surfactant and a method for preparing a mesoporous material using the gemini surfactant. The method for preparing a mesoporous material uses the novel gemini surfactant as a structure-directing agent to provide a mesoporous material has a pore size of 10 nm or less with uniform pore size distribution.

    摘要翻译: 本文公开了一种新颖的双子表面活性剂和使用双子表面活性剂制备介孔材料的方法。 制备介孔材料的方法使用新颖的双子表面活性剂作为结构导向剂,以提供具有均匀孔径分布的孔径为10nm或更小的介孔材料。

    Organic thin film transistor comprising multi-layered gate insulator
    20.
    发明授权
    Organic thin film transistor comprising multi-layered gate insulator 有权
    包括多层栅极绝缘体的有机薄膜晶体管

    公开(公告)号:US07005674B2

    公开(公告)日:2006-02-28

    申请号:US10769816

    申请日:2004-02-03

    IPC分类号: H01L35/24 H01L29/76

    摘要: An organic thin film transistor (OTFT) comprising a gate electrode, a gate insulating film, an organic active layer and a source/drain electrode, or a gate electrode, a gate insulating film, a source/drain electrode and an organic active layer, sequentially formed on a substrate, wherein the gate insulating film is a multi-layered insulator comprising a first layer of a high dielectric material and a second layer of an insulating organic polymer compatible with the organic active layer, the second layer being positioned directly under the organic active layer. The OTFT of the present invention shows low threshold and driving voltages, high charge mobility, and high Ion/Ioff, and it can be prepared by a wet process.

    摘要翻译: 一种有机薄膜晶体管(OTFT),包括栅极,栅极绝缘膜,有机活性层和源极/漏极,或栅电极,栅极绝缘膜,源/漏电极和有机活性层, 依次形成在基板上,其中栅极绝缘膜是包括高介电材料的第一层和与有机活性层相容的绝缘有机聚合物的第二层的多层绝缘体,第二层位于 有机活性层。 本发明的OTFT显示低阈值和驱动电压,高电荷迁移率和高/低电流,并且可以通过湿法制备。